isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BD807 DESCRIPTION ·DC Current Gain : hFE = 30(Min.)@ IC= 2A ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 60V(Min) ·Complement to Type BD808 APPLICATIONS ·Designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 10 A IB Base Current 6 A PC Collector Power Dissipation @ TC=25℃ 90 W TJ Junction Temperature 150 ℃ -55~150 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case isc Website：www.iscsemi.cn MAX UNIT 1.39 ℃/W isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BD807 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 200mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A 1.1 V VBE(on) Base-Emitter On Voltage IC= 4A; VCE= 2V 1.6 V ICBO Collector Cutoff Current VCB= 70V; IE= 0 1.0 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 2.0 mA hFE-1 DC Current Gain IC= 2A ; VCE= 2V 30 hFE-2 DC Current Gain IC= 4A ; VCE= 2V 15 Current-Gain—Bandwidth Product IC= 1.0A ; VCE= 10V; ftest= 1.0MHz 1.5 fT isc Website：www.iscsemi.cn CONDITIONS MIN 60 B 2 MAX UNIT V MHz