Fairchild MMBD1705A High conductance low leakage diode Datasheet

MMBD1701/A / 1703/A / 1704/A / 1705/A
3
CONNECTION DIAGRAMS
85
3
1
3
1701
2 NC
1
SOT-23
MMBD1701
MMBD1703
MMBD1704
MMBD1705
1
1703
2
MARKING
85
MMBD1701A
87
MMBD1703A
88
MMBD1704A
89
MMBD1705A
85A
87A
88A
89A
1
2
3
3
1704
2
3
1
2
1
1705
2
High Conductance Low Leakage Diode
Sourced from Process 1T.
Absolute Maximum Ratings*
Symbol
TA = 25°C unless otherwise noted
Parameter
Value
Units
W IV
Working Inverse Voltage
20
V
IO
Average Rectified Current
50
mA
IF
DC Forward Current
150
mA
if
Recurrent Peak Forward Current
150
mA
if(surge)
Tstg
Peak Forward Surge Current
Pulse width = 1.0 second
Storage Temperature Range
250
-55 to +150
mA
°C
TJ
Operating Junction Temperature
150
°C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Thermal Characteristics
Symbol
PD
RθJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient
Max
Units
MMBD1701/A /1703/A-1705/A*
350
2.8
357
mW
mW/°C
°C/W
*Device mounted on glass epoxy PCB 1.6" X 1.6" X 0.06"; mounting pad for the collector lead min. 0.93 in2
1997 Fairchild Semiconductor Corporation
MMBD1700 Rev. B
MMBD1701/A / 1703/A / 1704/A / 1705/A
Discrete POWER & Signal
Technologies
(continued)
Electrical Characteristics
Symbol
TA = 25°C unless otherwise noted
Parameter
Test Conditions
BV
Breakdown Voltage
IR = 5.0 µA
IR
Reverse Current
VR = 20 V
VF
Forward Voltage
CO
Diode Capacitance
IF = 10 µA
IF = 100 µA
IF = 1.0 mA
IF = 10 mA
IF = 20 mA
IF = 50 mA
VR = 0, f = 1.0 MHz
TRR
Reverse Recovery Time
MMBD1701-1705
MMBD1701A-1705A
Min
Max
Units
50
nA
500
610
740
880
950
1.1
1.0
mV
mV
mV
mV
mV
V
pF
700
pS
1.0
nS
30
420
520
640
760
810
0.89
IF = IR = 10 mA IRR = 1.0 mA,
RL = 100Ω
IF = IR = 10 mA IRR = 1.0 mA,
RL = 100Ω
V
Typical Characteristics
60
10
Ta= 25°C
50
40
1
2
3
5
10
20 30
IR - REVERSE CURRENT (uA)
50
100
Ta= 25°C
550
500
450
400
350
300
1
2
3
5
10
20 30
50
IF - FORWARD CURRENT (uA)
100
Ta= 25°C
5
0
1
2
3
5
10
VR - REVERSE VOLTAGE (V)
20
GENERAL RULE: The Reverse Current of a diode will approximately
double for every ten (10) Degree C increase in Temperature
FORWARD VOLTAGE vs FORWARD CURRENT
VF - 0.1 to 10 mA
V F - FORWARD VOLTAGE (mV)
V F - FORWARD VOLTAGE (mV)
FORWARD VOLTAGE vs FORWARD CURRENT
VF - 1.0 to 100 uA
600
REVERSE CURRENT vs REVERSE VOLTAGE
IR - 1 to 22 V
IIRR - REVERSE CURRENT (nA)
VR - REVERSE VOLTAGE (V)
REVERSE VOLTAGE vs REVERSE CURRENT
BV - 1.0 to 100 uA
850
Ta= 25°C
800
750
700
650
600
550
0.1
0.2 0.3 0.5
1
2 3
5
I F - FORWARD CURRENT (mA)
10
MMBD1701/A / 1703/A / 1704/A / 1705/A
High Conductance Low Leakage Diode
(continued)
Typical Characteristics
(continued)
Ta= 25°C
1
CAPACITANCE (pF)
1.6
1.4
1.2
1
0.8
10
20
30
50
100
I F - FORWARD CURRENT (mA)
PD - POWER DISSIPATION (mW)
250
P
D
200
I
150
100
R
-P
OW
ER
DI
-C
SS
ON
IPA
TIN
OU
TI
ON
SF
OR
-m
WA
W
RD
CU
RR
EN
T
-m
Io - AVER
A
AGE R
ECTIFIED
CURREN
T - mA
50
0
25
50
75
100
125
150
o
T A- AMBIENT TEMPERATURE ( C)
175
Ta= 25°C
0.9
0.8
0.7
0.6
0.5
200
Power Dissipation,
Average Rectified Current (Io),
Forward Current (I F) & Ambient Temperature (TA )
0
CAPACITANCE vs REVERSE CURRENT
VR - 0 to 15 V
0
2
4
6
8
10
REVERSE VOLTAGE (V)
12
14
Power Derating Curve
PD - POWER DISSIPATION (mW)
V F - FORWARD VOLTAGE (V)
FORWARD VOLTAGE vs FORWARD CURRENT
VF - 10 - 200 mA
350
300
250
SOT-23
200
DO-7
150
100
50
0
0
25
50
75
100 125 150
Io - AVERAGE TEMPERATURE
175
200
MMBD1701/A / 1703/A / 1704/A / 1705/A
High Conductance Low Leakage Diode
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