DG408/883, DG409/883 Single 8-Channel/Differential 4-Channel CMOS Analog Multiplexers June 1994 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The DG408/883 Single 8-Channel and DG409/883 Differential 4-Channel monolithic CMOS analog multiplexers are drop-in replacements for the popular DG508A and DG509A series devices. They each include an array of eight analog switches, a TTL/CMOS compatible digital decode circuit for channel selection, a voltage reference for logic thresholds and an ENABLE input for device selection when several multiplexers are present. • ON-Resistance 100Ω Maximum (+25oC) • Low Power Consumption (PD <11mW) • Fast Switching Action - tTRANS <250ns - tON/OFF(EN) <150ns The DG408/883 and DG409/883 feature lower signal ON resistance (<100Ω) and faster switch transition time (tTRANS <250ns) compared to the DG508A or DG509A. Charge injection has been reduced, simplifying sample and hold applications. The improvements in the DG408/883 series are made possible by using a high-voltage silicon-gate process. An epitaxial layer prevents the latch-up associated with older CMOS technologies. Power supplies may be single-ended from +5V to +34V, or split from ±5V to ±20V. • Low Charge Injection • Upgrade from DG508A/DG509A • TTL, CMOS Compatible • Single or Split Supply Operation Applications The analog switches are bilateral, equally matched for AC or bidirectional signals. The ON resistance variation with analog signals is quite low over a ±5V analog input range. • Data Acquisition Systems • Audio Switching Systems • Automatic Testers • Hi-Rel Systems Ordering Information • Sample and Hold Circuits PART NUMBER • Communication Systems • Analog Selector Switch TEMPERATURE RANGE DG408AK/883 -55oC DG409AK/883 -55oC PACKAGE to +125oC 16 Lead CerDIP to +125oC 16 Lead CerDIP Pinouts DG408/883 (CERDIP) TOP VIEW DG409/883 (CERDIP) TOP VIEW 1 16 A1 A0 EN 2 15 A2 EN 2 A0 V- 3 14 GND 1 V- 3 16 A1 15 GND 14 V+ S1 4 13 V+ S1A 4 13 S1B S2 5 12 S5 S2A 5 12 S2B S3 6 11 S6 S3A 6 11 S3B S4 7 10 S7 S4A 7 10 S4B D 8 9 S8 DA 8 9 DB 512045 File Number 3688 Spec Number 5-34 DG408/883, DG409/883 Functional Block Diagrams DG408/883 DG409/883 S1 D S1A S2 DA S4A DECODER/ DRIVER DB S1B DECODER/ DRIVER S4B S8 5V REF * DIGITAL INPUT LEVEL SHIFT * * 5V REF * * * DIGITAL INPUT PROTECTION LEVEL SHIFT * * * A0 A1 EN PROTECTION A0 A1 A2 EN Spec Number 5-35 512045 DG408/883, DG409/883 Pin Description - (DG408/883) PIN SYMBOL 1 A0 2 Pin Description - (DG409/883) DESCRIPTION PIN SYMBOL Logic Decode Input (Bit 0, LSB) 1 A0 Logic Decode Input (Bit 0, LSB) EN Enable Input 2 EN Enable Input 3 V- Negative Power Supply Terminal 3 V- NegAtive Power Supply Terminal 4 S1 Source (Input) for Channel 1 4 S1A Source (Input) for Channel 1A 5 S2 Source (Input) for Channel 2 5 S2A Source (Input) for Channel 2A 6 S3 Source (Input) for Channel 3 6 S3A Source (Input) for Channel 3A 7 S4 Source (Input) for Channel 4 7 S4A Source (Input) for Channel 4A 8 D Drain (Output) 8 DA Drain A (Output A) 9 S8 Source (Input) for Channel 8 9 DB Drain B (Output B) 10 S7 Source (Input) for Channel 7 10 S4B Source (Input) for Channel 4B 11 S6 Source (Input) for Channel 6 11 S3B Source (Input) for Channel 3B 12 S5 Source (Input) for Channel 5 12 S2B Source (Input) for Channel 2B 13 V+ Positive Power Supply Terminal (Substrate) 13 S1B Source (Input) for Channel 1B 14 GND Ground Terminal (Logic Common) 14 V+ Positive Power Supply Terminal 15 A2 Logic Decode Input (Bit 2, MSB) 15 GND Ground Terminal (Logic Common) 16 A1 Logic Decode Input (Bit 1) 16 A1 Logic Decode Input (Bit 1, MSB)) TRUTH TABLE DG408/883 DESCRIPTION TRUTH TABLE DG409/883 A2 A1 A0 EN ON SWITCH A1 A0 EN ON SWITCH X X X 0 NONE X X 0 NONE 0 0 0 1 1 0 0 1 1 0 0 1 1 2 0 1 1 2 0 1 0 1 3 1 0 1 3 0 1 1 1 4 1 1 1 4 1 0 0 1 5 1 0 1 1 6 1 1 0 1 7 1 1 1 1 8 NOTES: 1. VAH Logic “1” ≥2.4V. 2. VAL Logic “0” ≤0.8V. Spec Number 5-36 512045 Specifications DG408/883, DG409/883 Absolute Maximum Ratings Thermal Information V+ to V-. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +44.0V GND to V- . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V Digital Inputs (Note 1). . . . . . . . . . . . (V-) -2V to (V+) + 2V or 20mA, Whichever Occurs First Current (Any Terminal, Except S or D) . . . . . . . . . . . . . . . . . . . 30mA Continuous Current, S or D . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mA Peak Current, S or D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40mA (Pulsed 1ms, 10% Duty Cycle) Storage Temperature Range . . . . . . . . . . . . . . . . . -65oC to +125oC Lead Temperature (Soldering, 10s) . . . . . . . . . . . . . . . . . . . +300oC Thermal Resistance θJA θJC CerDIP Package . . . . . . . . . . . . . . . . . . . 70oC/W 20oC/W Operating Temperature . . . . . . . . . . . . . . . . . . . . . . -55oC to +125oC Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS Device Tested at: -55oC ≤ TA ≤ +125oC, V+ = +15V, V- = -15V, Unless Otherwise Specified LIMITS MAX UNITS 1, 3 +25oC, -55oC - 100 Ω 2 +125oC - 125 Ω VD = ±10V, VAL = 0.8V, VAH = 2.4V, IS = -10mA, (Note 2) 1 +25oC - 15 Ω VS = ±10V, VD = VEN = 0V 1 +25oC -0.5 +0.5 nA 2 +125oC -50 +50 nA 1 +25oC -1 +1 nA 2 +125oC -200 +200 nA 1 +25oC -1 +1 nA 2 +125oC -100 +100 nA 1 +25oC -1 +1 nA 2 +125oC -200 +200 nA 1 +25oC -1 +1 nA 2 +125oC -150 +150 nA 1, 2, 3 +25oC, +125oC, -55oC -10 +10 µA -10 +10 µA -10 +10 µA -10 +10 µA - 75 µA rDS(ON) VD = ±10V, VAL = 0.8V, VAH = 2.4V, IS = -10mA, Sequence Each Switch On Difference In DrainSource ON Resistance Between Channels ∆rDS(ON) Source OFF Leakage Current IS(OFF) Drain OFF Leakage Current MIN CONDITIONS ID(OFF) VS = ±10V, VD = VEN = 0V ± Drain-Source ON Resistance TEMPERATURE SYMBOL ± PARAMETERS GROUP A SUBGROUP 10V, 10V, DG408/883 DG409/883 Drain ON Leakage Current ID(ON) DG408/883 VS = VD = ±10V, VAL= 0.8V, VAH = 2.4V, VEN = 2.4V, Sequence Each Switch On DG409/883 Logic Input Current, Input Voltage High IAH VEN = 0.8V, VA = 2.4V VEN = 0.8V, VA = 15V Logic Input Current, Input Voltage Low IAL VEN = 0V, VA = 0V 1, 2, 3 +25oC, +125oC, -55oC VEN = 2.4V, VA = 0V Positive Supply Current Standby I+(SB) VEN = 0V, VA = 0V 1, 2, 3 +25oC, +125oC, -55oC Spec Number 5-37 512045 Specifications DG408/883, DG409/883 TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) Device Tested at: -55oC ≤ TA ≤ +125oC, V+ = +15V, V- = -15V, Unless Otherwise Specified LIMITS PARAMETERS SYMBOL Negative Supply Current Standby I-(SB) Positive Supply Current I+ Negative Supply Current GROUP A SUBGROUP CONDITIONS VEN = 0V, VA = 0V VEN = 2.4V, VA = 0V I- VEN = 2.4V, VA = 0V TEMPERATURE MIN MAX UNITS 1, 2, 3 +25oC, +125oC, -55oC -75 - µA 1, 3 +25oC, -55oC - 0.5 mA 2 +125oC - 2 mA 1, 2, 3 +25oC, +125oC, -55oC -0.5 - mA TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS Device Tested at: -55oC ≤ TA ≤ +125oC, V+ = +15V, V- = -15V, Unless Otherwise Specified LIMITS PARAMETERS SYMBOL GROUP A SUBGROUP CONDITIONS TEMPERATURE MIN MAX UNITS Switching Time of Multiplexer tTRANS 9, 10, 11 +25oC, +125oC, -55oC - 250 ns Enable Turn ON Time tON(EN) 9, 11 +25oC, -55oC - 150 ns 10 +125oC - 225 ns tOFF(EN) 9, 10, 11 +25oC, +125oC, -55oC - 150 ns tOPEN 9 +25oC 10 - ns Enable Turn OFF Time Break-Before-Make Interval TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS Table 3 Intentionally Left Blank. TABLE 4. ELECTRICAL TEST REQUIREMENTS MIL-STD-883 TEST REQUIREMENTS SUBGROUPS (SEE TABLES 1 AND 2) Interim Electrical Parameters (Pre Burn-In) 1 Final Electrical Test Parameters 1 (Note 3), 2, 3, 9, 10, 11 Group A Test Requirements 1, 2, 3, 9, 10, 11 Groups C and D Endpoints 1 NOTES: 1. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings. 2. ∆rDS(ON) = rDS(ON) MAX - rDS(ON) MIN. 3. PDA applies to Subgroup 1 only. Spec Number 5-38 512045 DG408/883 Die Characteristics DIE DIMENSIONS: 1800µm x 3320µm x 485 ± 25µm METALLIZATION: Type: SiAl Thickness: 12kÅ ± 1kÅ GLASSIVATION: Type: Nitride Thickness: 8kÅ ± 1kÅ WORST CASE CURRENT DENSITY: 9.1 x 104 A/cm2 Metallization Mask Layout DG408/883 EN (2) A1 (16) A0 (1) A2 (15) GND (14) NC V- (3) (13) V+ S1 (4) (12) S5 S2 (5) (11) S6 S3 (6) NC S4 (7) (8) D (9) S8 (10) S7 Spec Number 5-39 512045 DG409/883 Die Characteristics DIE DIMENSIONS: 1800µm x 3320µm x 485 ± 25µm METALLIZATION: Type: SiAl Thickness: 12kÅ ± 1kÅ GLASSIVATION: Type: Nitride Thickness: 8kÅ ± 1kÅ WORST CASE CURRENT DENSITY: 9.1 x 104 A/cm2 Metallization Mask Layout DG409/883 EN (2) A1 (16) A0 (1) GND (15) NC NC V- (3) (14) V+ S1A (4) (13) S1B S2A (5) (12) S2B S3A (6) (11) S3B S4A (7) (8) DA (9) DB (10) S4B Spec Number 5-40 512045 DG408/883, DG409/883 Test Circuits +15V +15V +2.4V +2.4V V+ EN A0 LOGIC INPUT S2 - S7 GND V- SWITCH OUTPUT VD ±10V A1 DG408/883 S8 A2 V+ S1B EN A0 S1A - S4A, DA A DG409/883 S ±10V S1 D 50Ω 300Ω LOGIC INPUT 35pF 1 A2 4B GND V- ±10V ±10V DB 50Ω 300Ω -15V SWITCH OUTPUT VDB 35pF -15V FIGURE 1A. FIGURE 1B. tR < 20ns (10% TO 90%) tF < 20ns 3V LOGIC INPUT 50% 50% 0V S1 VS1 SWITCH OUTPUT VD ON 0.8 VS1 0V 0.8 VS8 VS8 tTRANS tTRANS S8 ON FIGURE 1C. FIGURE 1. TRANSITION TIME +15V +15V V+ S1 DG408/883 A1 S2 - S8 A2 EN GND V- D A0 LOGIC INPUT 50Ω V+ S1B DG409/883 A1 S1A - S4A S2B - S4B, DA EN GND V- DB A0 -5V SWITCH OUTPUT VD 300Ω LOGIC INPUT 35pF 50Ω -5V SWITCH OUTPUT VDB 300Ω -15V 35pF -15V FIGURE 2A. LOGIC INPUT FIGURE 2B. tR < 20ns tF < 20ns 3V 50% 50% 0V tON(EN) 0V SWITCH OUTPUT VD 0.9 V0 V0 tOFF(EN) FIGURE 2C. FIGURE 2. tON(EN), tOFF(EN) Spec Number 5-41 512045 DG408/883, DG409/883 Test Circuits (Continued) +15V +2.4V LOGIC INPUT V+ EN ALL S AND DA ±10V A0 DG408/883 A1 DG409/883 LOGIC INPUT A2 GND V- SWITCH OUTPUT VD D, DB 50Ω 300Ω tR < 20ns tF < 20ns 3V 0V VS 80% SWITCH OUTPUT VD 35pF 80% 0V tOPEN -15V FIGURE 3A. FIGURE 3B. FIGURE 3. BREAK-BEFORE-MAKE INTERVAL Burn-In Circuits DG408/883 DG409/883 +VL +VL A0 1 16 2 15 EN 3 D1 C1 S1 S2 S3 S4 A0 A2 EN GND V- -V A1 V+ 4 13 5 12 6 11 7 10 8 9 D S5 D2 D1 +V C2 C1 S1A S2A S6 S3A S7 S4A S8 DA R1 10K 16 2 15 3 14 A1 GND V+ V- -V 14 1 4 13 5 12 6 11 7 10 8 9 S1B D2 S2B S3B S4B DB R1 10K R1 10K Spec Number 5-42 +V C2 512045 DG408/883, DG409/883 Ceramic Dual-In-Line Frit Seal Packages (CerDIP) c1 F16.3 MIL-STD-1835 GDIP1-T16 (D-2, CONFIGURATION A) LEAD FINISH 16 LEAD CERAMIC DUAL-IN-LINE FRIT SEAL PACKAGE -D- -A- BASE METAL INCHES (c) E b1 M M (b) -Bbbb S C A-B S SECTION A-A D S D BASE PLANE Q -C- SEATING PLANE A α L S1 eA A A b2 b ccc M C A-B S e D S eA/2 c aaa M C A - B S D S SYMBOL MIN MAX MIN MAX NOTES A - 0.200 - 5.08 - b 0.014 0.026 0.36 0.66 2 b1 0.014 0.023 0.36 0.58 3 b2 0.045 0.065 1.14 1.65 - b3 0.023 0.045 0.58 1.14 4 c 0.008 0.018 0.20 0.46 2 c1 0.008 0.015 0.20 0.38 3 D - 0.840 - 21.34 5 E 0.220 0.310 5.59 7.87 5 e 0.100 BSC 2.54 BSC - eA 0.300 BSC 7.62 BSC - 3.81 BSC - eA/2 NOTES: 1. Index area: A notch or a pin one identification mark shall be located adjacent to pin one and shall be located within the shaded area shown. The manufacturer’s identification shall not be used as a pin one identification mark. 2. The maximum limits of lead dimensions b and c or M shall be measured at the centroid of the finished lead surfaces, when solder dip or tin plate lead finish is applied. MILLIMETERS 0.150 BSC L 0.125 0.200 3.18 5.08 - Q 0.015 0.060 0.38 1.52 6 S1 0.005 - 0.13 - 7 α 90o 105o 90o 105o - aaa - 0.015 - 0.38 - bbb - 0.030 - 0.76 - 3. Dimensions b1 and c1 apply to lead base metal only. Dimension M applies to lead plating and finish thickness. ccc - 0.010 - 0.25 - M - 0.0015 - 0.038 2, 3 4. Corner leads (1, N, N/2, and N/2+1) may be configured with a partial lead paddle. For this configuration dimension b3 replaces dimension b2. N 16 16 8 Rev. 0 4/94 5. This dimension allows for off-center lid, meniscus, and glass overrun. 6. Dimension Q shall be measured from the seating plane to the base plane. 7. Measure dimension S1 at all four corners. 8. N is the maximum number of terminal positions. 9. Dimensioning and tolerancing per ANSI Y14.5M - 1982. 10. Controlling dimension: INCH. Spec Number 5-43 512045 DG408, DG409 DESIGN INFORMATION Single 8-Channel/Differential 4-Channel CMOS Analog Multiplexers August 1999 The information contained in this section has been developed through characterization by Intersil Semiconductor and is for use as application and design information only. No guarantee is implied. Typical Performance Curves SOURCE/DRAIN CAPACITANCE vs ANALOG VOLTAGE (SINGLE 12V SUPPLY) INPUT LOGIC CURRENT vs LOGIC INPUT VOLTAGE 3.5 75 3.0 CD(ON) V+ = +15V V- = -15V 50 CS, D (pF) IIN (pA) 2.0 1.0 CD(OFF) 25 0.5pA 0.0 CS(OFF) 0 -1.0 0 5 10 0 15 VIN (V) 4 8 SOURCE/DRAIN CAPACITANCE vs ANALOG VOLTAGE LOGIC INPUT CURRENT vs TEMPERATURE 80 VSUPPLY = ±15V VIN = 0V V+ = +15V V- = -15V 0 CD(ON) IIN (pA) CS, D (pF) 60 CD(OFF) 40 20 CS(OFF) -200 -400 -600 0 -800 -15 0 VA (V) -55 15 DRAIN LEAKAGE CURRENT vs SOURCE/DRAIN VOLTAGE (SINGLE 12V SUPPLY) 5 45 TEMPERATURE (oC) 85 125 DRAIN LEAKAGE CURRENT vs SOURCE/DRAIN VOLTAGE 60 100 DG408 ID(OFF) DG409 ID(OFF) DG409 ID(ON) DG408 ID(ON) 20 60 V+ = 15V V- = -15V VS = -VD FOR ID(OFF) VD = VS(OPEN) FOR ID(ON) 20 ID (pA) 40 ID (pA) 12 VA (V) 0 -20 -60 -20 VS = 0V FOR ID(OFF) VS = VD FOR ID(ON) -40 -100 -140 -15 -60 0 2 4 6 8 10 12 VD (V) DG409 ID(OFF) DG409 ID(ON) DG408 ID(ON), ID(OFF) 0 VS, VD (V) Spec Number 5-44 15 512045 DG408, DG409 DESIGN INFORMATION (Continued) The information contained in this section has been developed through characterization by Intersil Semiconductor and is for use as application and design information only. No guarantee is implied. Typical Performance Curves (Continued) SOURCE LEAKAGE CURRENT vs SOURCE VOLTAGE INPUT SWITCHING THRESHOLD vs SUPPLY VOLTAGE 2.0 20 15 1.5 V+ = +15V V- = -15V VIN (V) IS(OFF) (pA) 10 5 0 V+ = +12V V- = 0V 1.0 0.5 -5 0.0 -10 -15 0 4 15 8 12 NEGATIVE SUPPLY CURRENT vs SWITCHING FREQUENCY 20 POSITIVE SUPPLY CURRENT vs SWITCHING FREQUENCY 5 104 10 VSUPPLY = ±15V VSUPPLY = ±15V 104 103 EN = 2.4V 102 I+ (mA) 103 -(I-) (µA) 16 ±VSUPPLY (V) VS (V) 102 10 EN = 0V 10 1 1 EN = 2.4V 0.1 EN = 0V 0.1 0.01 100 1k 10k 100k 1M 10M 100 SWITCHING FREQUENCY (Hz) 1M 10M 0 I+ 103 -200 102 I- (nA) I+, I- (nA) 100k NEGATIVE SUPPLY CURRENT vs TEMPERATURE VSUPPLY = ±15V 104 10k SWITCHING FREQUENCY (Hz) ISUPPLY vs TEMPERATURE (LOG SCALE) 105 1k 10 -400 V+ = 15V V- = -15V VIN = 0V VEN = 0V 1 -600 0.1 -(I-) -800 0.01 -55 5 45 85 -55 125 5 45 85 125 TEMPERATURE (oC) TEMPERATURE (oC) Spec Number 5-45 512045 DG408, DG409 DESIGN INFORMATION (Continued) The information contained in this section has been developed through characterization by Intersil Semiconductor and is for use as application and design information only. No guarantee is implied. Typical Performance Curves (Continued) POSITIVE SUPPLY CURRENT vs TEMPERATURE (DG408) CHARGE INJECTION vs ANALOG VOLTAGE VS (DG408, DG409) 90 20 70 60 V+ = 15V V- = -15V 50 Q (pC) I+ (µA) 15 CL = 10,000pF VIN = 5VP-P 80 V+ = 15V V- = -15V VIN = 0V VEN = 0V 10 40 30 20 5 10 V+ = 12V V- = 0V 0 -10 0 -55 5 45 -15 125 85 -10 -5 TEMPERATURE (oC) 0 5 15 10 VS (V) rDS(ON) vs VD AND SUPPLY rDS(ON) vs VD (SINGLE SUPPLY) 120 160 140 100 V+ = 7.5V ±5V 120 rDS(ON) (Ω) rDS(ON) (Ω) 80 ±8V 60 ±10V ±12V 40 12V 80 15V 20V 60 40 ±15V 20 10V 100 22V V- = 0V 20 ±20V 0 0 -20 -16 -12 -8 -4 0 VD (V) 4 8 12 16 0 20 rDS(ON) vs VS AND TEMPERATURE 4 8 12 VD (V) 20 22 rDS(ON) vs VS AND TEMPERATURE (SINGLE SUPPLY) 80 130 V+ = 15V V- = -15V 70 +125oC 110 +85oC 60 +125oC 50 90 +85oC 40 rDS(ON) (Ω) rDS(ON) (Ω) 16 +25oC 30 +25oC 70 50 20 0oC -40oC -55oC 10 0oC -40oC -55oC 30 0 V+ = 12V V- = 0V 10 -15 0 VS (V) 15 0 8 4 12 VS (V) Spec Number 5-46 512045 DG408, DG409 DESIGN INFORMATION (Continued) The information contained in this section has been developed through characterization by Intersil Semiconductor and is for use as application and design information only. No guarantee is implied. Typical Performance Curves (Continued) OFF ISOLATION AND CROSSTALK vs FREQUENCY SWITCHING TIME vs SINGLE SUPPLY -150 275 V+ = +15V V- = -15V RL = 1kΩ -130 250 225 OFF ISOLATION -90 t (ns) (dB) -110 200 tTRANS 175 -70 tOFF(EN) 150 CROSSTALK -50 tON(EN) 125 -30 100 100 1k 10k 100k 1M 10M 100M 8 9 10 11 12 VSUPPLY (V) FREQUENCY (Hz) SWITCHING TIME vs BIPOLAR SUPPLY 13 14 15 SWITCHING TIME vs VIN (SINGLE SUPPLY) 190 200 tTRANS tTRANS 170 150 150 tON(EN) t (ns) t (ns) 175 125 130 tOFF(EN) 100 tOFF(EN) 110 tON(EN) 75 ±10 ±12 ±14 ±16 ±18 ±20 90 ±22 2 3 VSUPPLY (V) 4 5 VIN (V) SWITCHING TIME vs VIN (BIPOLAR SUPPLY) INSERTION LOSS vs FREQUENCY 180 1 tTRANS RL = 1kΩ 0 160 -1 t (ns) LOSS (dB) 140 120 tOFF(EN) V+ = +15V V- = -15V REF. 1VRMS -2 -3 -4 100 RL = 50Ω -5 tON(EN) 80 -6 2 3 4 5 10 VIN (V) 102 103 104 105 106 FREQUENCY (Hz) 107 Spec Number 5-47 108 512045 DG408, DG409 All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. 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