F10C20D thru F10C60D Pb F10C20D/F10C40D/F10C60D Pb Free Plating Product 10.0 Ampere Heatsink Dual Doubler Polarity Fast Recovery Rectifiers TO-220AB(TO-220-3L) Features ※ Fast switching for high efficiency ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Unit:inch(mm) .419(10.66) .387(9.85) .196(5.00) .163(4.16) .139(3.55) MIN .054(1.39) .038(0.96) .019(0.50) Mechanical Data ※ Case: Open Heatsink Package TO-220AB ※ Epoxy: UL 94V-0 rate flame retardant ※ Terminals: Solderable per MIL-STD-202 method 208 ※ Polarity: As marked on diode body ※ Mounting position: Any ※ Weight: 2.2 gram approximately .1(2.54) Case Positive Common Cathode Suffix "C" .548(13.93) .624(15.87) .50(12.7)MIN .269(6.85) .177(4.5)MAX Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power Supply,Motor Control,UPS and SMPS etc. .226(5.75) .045(1.15) .025(0.65)MAX .1(2.54) Case Negative Common Anode Suffix "A" Case Doubler Tandem Polarity Suffix "D" Case Series Tandem Polarity Suffix "S" MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25℃ ambient temperature unless otherwise specified. Single phase,half wave,60Hz,resistive or inductive load. For capacitive load, derate current by 20%. PARAMETER SYMBOL F10C20C F10C20A F10C20D F10C20S F10C40C F10C40A F10C40D F10C40S F10C60C F10C60A F10C60D F10C60S UNIT Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage VRRM VRMS VDC 200 140 200 400 280 400 600 420 600 V V V Maximum Average Forward Rectified Current Tc=100°C (Total Device 2x5.0A=10.0A) IF(AV) 10.0 A Peak Forward Surge Current, 8.3ms single Half sine-wave superimposed on rated load (JEDEC method) IFSM 125 A Maximum Instantaneous Forward Voltage @5.0A (Per Diode/Per Leg) VF Maximum DC Reverse Current @TJ=25°C At Rated DC Blocking Voltage @TJ=125°C IR 5.0 100 μA μA Maximum Reverse Recovery Time (Note1) Typical Junction Capacitance (Note 2) Typical Thermal Resistance (Note 3) Trr CJ RθJC 35 65 1.5 nS pF °C/W Operating Junction and Storage Temperature Range TJ,TSTG -55 to +150 °C 0.98 1.3 1.7 V Note:(1)Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A. Note:(2)Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC. Note:(3)Thermal Resistance junction to case. Rev.08T © 1995 Thinki Semiconductor Co., Ltd. Page 1/2 http://www.thinkisemi.com.tw/ F10C20D thru F10C60D FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT FIG.1 - FORWARD CURRENT DERATING CURVE 125 PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD RECTIFIED CURRENT, AMPERES 10.0 8.0 6.0 4.0 2.0 60 Hz Resistive or Inductive load Pulse Width 8.3ms Single Half-Sire-Wave (JEDEC Method) 100 75 50 25 0 0 0 50 100 150 1 100 NUMBER OF CYCLES AT 60Hz o CASE TEMPERATURE, C FIG.3 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS FIG.4 - TYPICAL REVERSE CHARACTERISTICS 10 1000 INSTANTANEOUS REVERSE CURRENT, MICROAMPERES IINSTANTANEOUS FORWARD CURRENT, AMPERES 10 F10C40D 1.0 F10C20D F10C60D 0.1 TJ=25oC PULSE WIDTH=300uS 1% DUTY CYCLE 0.01 0.4 0.6 0.8 1.0 1.2 1.4 1.6 o TJ=125 C 100 10 o TJ=25 C 1 0.1 0 1.8 INSTANTANEOUS FORWARD VOLTAGE, VOLTS 20 40 60 80 100 PERCENT OF RATED PEAK REVERSE VOLTAGE,% FIG.5 - TYPICAL JUNCTION CAPACITANCE JUNCTION CAPACITANCE, pF 1000 TJ = 25oC f = 1.0 MHZ Vsig = 50mVp-p 100 10 0.1 1.0 4.0 10 100 REVERSE VOLTAGE, VOLTS Rev.08T © 1995 Thinki Semiconductor Co., Ltd. Page 2/2 http://www.thinkisemi.com.tw/