Thinki F10C60A 10.0 ampere heatsink dual doubler polarity fast recovery rectifier Datasheet

F10C20D thru F10C60D
Pb
F10C20D/F10C40D/F10C60D
Pb Free Plating Product
10.0 Ampere Heatsink Dual Doubler Polarity Fast Recovery Rectifiers
TO-220AB(TO-220-3L)
Features
※ Fast switching for high efficiency
※ Low forward voltage drop
※ High current capability
※ Low reverse leakage current
※ High surge current capability
Unit:inch(mm)
.419(10.66)
.387(9.85)
.196(5.00)
.163(4.16)
.139(3.55)
MIN
.054(1.39)
.038(0.96)
.019(0.50)
Mechanical Data
※ Case: Open Heatsink Package TO-220AB
※ Epoxy: UL 94V-0 rate flame retardant
※ Terminals: Solderable per MIL-STD-202 method 208
※ Polarity: As marked on diode body
※ Mounting position: Any
※ Weight: 2.2 gram approximately
.1(2.54)
Case
Positive
Common Cathode
Suffix "C"
.548(13.93)
.624(15.87)
.50(12.7)MIN
.269(6.85)
.177(4.5)MAX
Application
※ Automotive Inverters and Solar Inverters
※ Car Audio Amplifiers and Sound Device Systems
※ Plating Power Supply,Motor Control,UPS and SMPS etc.
.226(5.75)
.045(1.15)
.025(0.65)MAX
.1(2.54)
Case
Negative
Common Anode
Suffix "A"
Case
Doubler
Tandem Polarity
Suffix "D"
Case
Series
Tandem Polarity
Suffix "S"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25℃ ambient temperature unless otherwise specified.
Single phase,half wave,60Hz,resistive or inductive load.
For capacitive load, derate current by 20%.
PARAMETER
SYMBOL
F10C20C
F10C20A
F10C20D
F10C20S
F10C40C
F10C40A
F10C40D
F10C40S
F10C60C
F10C60A
F10C60D
F10C60S
UNIT
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
VRRM
VRMS
VDC
200
140
200
400
280
400
600
420
600
V
V
V
Maximum Average Forward Rectified
Current Tc=100°C
(Total Device 2x5.0A=10.0A)
IF(AV)
10.0
A
Peak Forward Surge Current, 8.3ms single Half
sine-wave superimposed on rated load (JEDEC
method)
IFSM
125
A
Maximum Instantaneous Forward Voltage
@5.0A
(Per Diode/Per Leg)
VF
Maximum DC Reverse Current @TJ=25°C
At Rated DC Blocking Voltage @TJ=125°C
IR
5.0
100
μA
μA
Maximum Reverse Recovery Time (Note1)
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
Trr
CJ
RθJC
35
65
1.5
nS
pF
°C/W
Operating Junction and Storage
Temperature Range
TJ,TSTG
-55 to +150
°C
0.98
1.3
1.7
V
Note:(1)Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A.
Note:(2)Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
Note:(3)Thermal Resistance junction to case.
Rev.08T
© 1995 Thinki Semiconductor Co., Ltd.
Page 1/2
http://www.thinkisemi.com.tw/
F10C20D thru F10C60D
FIG.2 - MAXIMUM NON-REPETITIVE
PEAK FORWARD SURGE CURRENT
FIG.1 - FORWARD CURRENT DERATING CURVE
125
PEAK FORWARD SURGE CURRENT,
AMPERES
AVERAGE FORWARD RECTIFIED
CURRENT, AMPERES
10.0
8.0
6.0
4.0
2.0
60 Hz Resistive or
Inductive load
Pulse Width 8.3ms
Single Half-Sire-Wave
(JEDEC Method)
100
75
50
25
0
0
0
50
100
150
1
100
NUMBER OF CYCLES AT 60Hz
o
CASE TEMPERATURE, C
FIG.3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
10
1000
INSTANTANEOUS REVERSE CURRENT,
MICROAMPERES
IINSTANTANEOUS FORWARD CURRENT,
AMPERES
10
F10C40D
1.0
F10C20D
F10C60D
0.1
TJ=25oC
PULSE WIDTH=300uS
1% DUTY CYCLE
0.01
0.4
0.6
0.8
1.0
1.2
1.4
1.6
o
TJ=125 C
100
10
o
TJ=25 C
1
0.1
0
1.8
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
20
40
60
80
100
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
FIG.5 - TYPICAL JUNCTION CAPACITANCE
JUNCTION CAPACITANCE, pF
1000
TJ = 25oC
f = 1.0 MHZ
Vsig = 50mVp-p
100
10
0.1
1.0
4.0
10
100
REVERSE VOLTAGE, VOLTS
Rev.08T
© 1995 Thinki Semiconductor Co., Ltd.
Page 2/2
http://www.thinkisemi.com.tw/
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