Rev. 2.0 BSS7728N SIPMOS Small-Signal-Transistor Feature Product Summary • N-Channel VDS 60 V • Enhancement mode RDS(on) 5 Ω • Logic Level ID 0.2 A • dv/dt rated SOT-23 Drain pin 3 Gate pin1 Source pin 2 Type Package BSS7728N SOT-23 Ordering Code Tape and Reel Information Marking Q67042-S4189 E6327: 3000 pcs/reel sSK Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current ID Value Unit A TA=25°C 0.2 TA=70°C 0.16 I D puls 0.8 dv/dt 6 Gate source voltage VGS ±20 V Power dissipation Ptot 0.36 W -55... +150 °C Pulsed drain current TA=25°C Reverse diode dv/dt kV/µs IS=0.2A, VDS=48V, di/dt=200A/µs, Tjmax=150°C TA=25°C Operating and storage temperature T j , Tstg IEC climatic category; DIN IEC 68-1 55/150/56 Page 1 2003-06-06 Rev. 2.0 BSS7728N Thermal Characteristics Parameter Symbol Values Unit min. typ. max. - - 350 Characteristics Thermal resistance, junction - ambient RthJA K/W at minimal footprint Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)DSS 60 - - VGS(th) 1.3 1.9 2.3 Static Characteristics Drain-source breakdown voltage V VGS=0, ID=250µA Gate threshold voltage, V GS = VDS ID=26µA Zero gate voltage drain current µA I DSS VDS=60V, VGS =0, Tj=25°C - - 0.1 VDS=60V, VGS =0, Tj=150°C - - 5 I GSS - 1 10 nA RDS(on) - 4.3 7.5 Ω RDS(on) - 2.7 5 Gate-source leakage current VGS=20V, VDS=0 Drain-source on-state resistance VGS=4.5V, ID=0.05A Drain-source on-state resistance VGS=10V, ID=0.5A Page 2 2003-06-06 Rev. 2.0 BSS7728N Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. 0.1 0.2 - S pF Dynamic Characteristics Transconductance gfs VDS≥2*ID*RDS(on)max, ID=0.16A Input capacitance Ciss VGS=0, VDS=25V, - 37 56 Output capacitance Coss f=1MHz - 7.3 11 Reverse transfer capacitance Crss - 2.9 4.4 Turn-on delay time td(on) VDD=30V, VGS=10V, - 2.7 4 Rise time tr ID=0.2A, RG=6Ω - 2.7 4.1 Turn-off delay time td(off) - 6.1 9.1 Fall time tf - 9 13 - 0.12 0.18 - 0.43 0.65 - 1 1.5 V(plateau) VDD =48V, ID = 0.2 A - 3.8 - V IS - - 0.2 A - - 0.8 ns Gate Charge Characteristics Gate to source charge Q gs Gate to drain charge Q gd Gate charge total Qg VDD =48V, ID =0.2A VDD =48V, ID =0.2A, nC VGS =0 to 10V Gate plateau voltage Reverse Diode Inverse diode continuous TA=25°C forward current Inv. diode direct current, pulsedISM Inverse diode forward voltage VSD VGS=0, IF=IS - 0.84 1.2 V Reverse recovery time trr VR=30V, IF =lS , - 11.5 17.5 ns Reverse recovery charge Qrr diF/dt=100A/µs - 2.6 4 nC Page 3 2003-06-06 Rev. 2.0 BSS7728N 1 Power dissipation 2 Drain current Ptot = f (TA) ID = f (TA) parameter: VGS ≥ 10 V BSS7728N 0.38 0.22 W A 0.32 0.18 0.28 0.16 0.24 0.14 ID Ptot BSS7728N 0.12 0.2 0.1 0.16 0.08 0.12 0.06 0.08 0.04 0.04 0.02 0 0 20 40 60 80 100 120 °C 0 0 160 20 40 60 80 100 120 TA 160 TA 3 Safe operating area 4 Transient thermal impedance ID = f ( VDS ) ZthJA = f (tp ) parameter : D = 0 , TA = 25 °C parameter : D = tp /T 1 BSS7728N 10 °C 10 3 BSS7728N K/W A 10 2 100 µs / ID ID =V R 10 ZthJA 10 t = 33.0µs p 0 DS 1 ms ) (on DS -1 10 1 10 ms D = 0.50 10 0 0.20 0.10 10 0.05 -2 0.02 10 -1 DC 0.01 single pulse 10 -3 10 0 10 1 V 10 2 VDS 10 -2 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp Page 4 2003-06-06 Rev. 2.0 BSS7728N 5 Typ. output characteristic 6 Typ. drain-source on resistance ID = f (VDS) RDS(on) = f (ID) parameter: Tj = 25 °C, VGS parameter: Tj = 25 °C, VGS 10 0.8 Ω 10V 7V 6V 5V 0.6 4.5V 4.1V 3.7V 0.5 3.5V 3.1V 3.1V 3.5V 3.7V 4.1V 4.5V 5V 6V 7V 10V 8 RDS(on) ID A 7 6 5 0.4 4 0.3 3 0.2 2 0.1 0 0 1 0.5 1 1.5 2 2.5 3 3.5 4 V 0 0 5 0.1 0.2 0.3 0.4 0.5 0.6 VDS A 0.8 ID 7 Typ. transfer characteristics 8 Typ. forward transconductance ID = f ( VGS ); VDS≥ 2 x ID x RDS(on)max gfs = f(ID) parameter: Tj = 25 °C parameter: Tj = 25 °C 0.4 0.8 S A 0.32 0.6 gfs ID 0.28 0.5 0.24 0.2 0.4 0.16 0.3 0.12 0.2 0.08 0.1 0 0 0.04 1 2 3 4 V 0 0 6 VGS 0.1 0.2 0.3 0.4 0.5 0.6 A 0.8 ID Page 5 2003-06-06 Rev. 2.0 BSS7728N 9 Drain-source on-state resistance 10 Typ. gate threshold voltage RDS(on) = f (Tj ) VGS(th) = f (Tj ) parameter : ID = 0.5 A, VGS = 10 V parameter: VGS = VDS ; ID =26µA BSS7728N 15 2.8 12 V 98% 11 Vgs(th) RDS(on) Ω 10 9 8 typ. 1.8 7 6 98% 5 2% 4 1.3 3 typ 2 1 0 -60 -20 20 60 100 °C 0.8 -60 180 -20 20 60 100 Tj °C 160 Tj 11 Typ. capacitances 12 Forward character. of reverse diode C = f (VDS) IF = f (VSD) parameter: VGS =0, f=1 MHz, Tj = 25 °C parameter: Tj 10 2 10 0 BSS7728N A Ciss pF C IF 10 -1 10 1 Coss 10 -2 Tj = 25 °C typ Crss Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 0 0 4 8 12 16 20 24 28 V 36 VDS 10 -3 0 0.4 0.8 1.2 1.6 2 2.4 V 3 VSD Page 6 2003-06-06 Rev. 2.0 BSS7728N 13 Typ. gate charge 14 Drain-source breakdown voltage VGS = f (QG); parameter: V DS , V(BR)DSS = f (Tj ) ID = 0.5 A pulsed, Tj = 25 °C 16 BSS7728N BSS7728N 72 V V(BR)DSS V VGS 12 10 0.2 VDS max 0.5 VDS max 68 66 64 8 0.8 V DS max 62 6 60 4 58 2 0 0 56 0.2 0.4 0.6 0.8 1 1.2 1.4 nC 1.8 QG 54 -60 -20 20 60 100 °C 180 Tj Page 7 2003-06-06 Rev. 2.0 BSS7728N Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. 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