CHENMKO ENTERPRISE CO.,LTD CHDTC144VUPT SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 30 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE SC-70/SOT-323 * Small surface mounting type. (SC-70/SOT323) * High current gain. * Suitable for high packing density. (2) Low colloector-emitter saturation. High saturation current capability. Internal isolated NPN transistors in one package. Built in bias resistor(R1=47kΩ, Typ. ) (3) 1.3±0.1 (1) * * * * 0.65 2.0±0.2 0.65 0.3±0.1 CONSTRUCTION 1.25±0.1 * One NPN transistors and bias of thin-film resistors in one package. MARKING VUA 0.8~1.1 0.05~0.2 CIRCUIT Gnd In 2 1 0~0.1 0.1Min. 2.0~2.45 R2 TR R1 3 Out SC-70/SOT-323 Dimensions in millimeters LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCC Supply voltage − 50 V VIN Input voltage -15 +40 V − 30 − 100 − 200 mW O C IO DC Output current IC(Max.) Tamb ≤ 25 OC, Note 1 mA PTOT Total power dissipation TSTG Storage temperature −55 +150 TJ Junction temperature − 150 O C Thermal resistance − 140 O C/W RθJ-S junction - soldering point Note 1. Transistor mounted on an FR4 printed-circuit board. 2005-06 RATING CHARACTERISTIC ( CHDTC144VUPT ) CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VIoff) Input off voltage IO=100uA; VCC=5.0V 1.0 − − V VI(on) Input on voltage IO=2mA; VO=0.3V − − 6.0 V VO(on) Output voltage IO=10mA; II=0.5mA − 0.1 0.3 V II Input current VI=5V − − 0.16 mA IC(off) Output current VI=0V; VCC=50V − − 0.5 uA hFE DC current gain IO=5mA; VO=5.0V 33 − − R1 Input resistor 61.1 KΩ Resistor ratio Transition frequency 32.9 0.17 − 47 R2/R1 fT 0.21 250 0.26 − MHz Note 1.Pulse test: tp≤300uS; δ≤0.02. IE=-5mA, VCE=10.0V f=100MHz =