Preliminary Datasheet H5N3007FL-M0 300V - 15A - MOS FET High Speed Power Switching R07DS0995EJ0100 Rev.1.00 Jan 09, 2013 Features Low on-resistance RDS(on) = 0.12 typ. (at ID = 7.5 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching Built-in fast recovery diode Outline RENESAS Package code: PRSS0003AF-A (Package name: TO-220FL) D 1. Gate 2. Drain 3. Source G 1 2 3 S Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel to case thermal impedance Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID (pulse) Note1 IDR IDR (pulse) Note1 IAPNote3 EARNote3 ch-c Pch Note2 Tch Tstg Ratings 300 30 15 60 15 60 15 13.5 3.57 35 150 –55 to +150 Unit V V A A A A A mJ C/W W C C Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tc = 25C 3. STch = 25C, Tch 150C R07DS0995EJ0100 Rev.1.00 Jan 09, 2013 Page 1 of 6 H5N3007FL-M0 Preliminary Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Forward transfer admittance Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate to source charge Gate to drain charge Body-drain diode forward voltage Body-drain diode reverse recovery time Symbol V(BR)DSS IDSS IGSS VGS(off) |yfs| RDS(on) Min 300 — — 1.5 9 — Typ — — — — 15 0.12 Max — 10 0.1 4.0 — 0.16 Unit V A A V S Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd — — — — — — — — — — 2180 275 77 35 50 160 40 80 10 40 — — — — — — — — — — pF pF pF ns ns ns ns nC nC nC VDF trr — — 0.85 110 1.30 — V ns Test conditions ID = 10 mA, VGS = 0 VDS = 300 V, VGS = 0 VGS = 30 V, VDS = 0 VDS = 10 V, ID = 1 mA ID = 7.5 A, VDS = 10 V Note4 ID = 7.5 A, VGS = 10 V Note4 VDS = 25 V VGS = 0 f = 1 MHz ID = 7.5 A VGS = 10 V RL = 20 Rg = 10 VDD = 240 V VGS = 10 V ID = 15 A IF = 15 A, VGS = 0 Note4 IF = 15 A, VGS = 0 diF/dt = 100 A/s Notes: 4. Pulse test R07DS0995EJ0100 Rev.1.00 Jan 09, 2013 Page 2 of 6 H5N3007FL-M0 Preliminary Main Characteristics Maximum Safe Operation Area Typical Output Characteristics 60 100 PW 10 1 10 = 10 0 Drain Current ID (A) Drain Current ID (A) 1000 μs μs Operation in this area is limited by RDS(on) 0.1 Ta = 25°C Pulse Test 50 6V 15 V, 10 V 8V 40 5.5 V 5V 30 20 4.5 V 10 VGS = 4 V Tc = 25°C 1 shot 0.01 0.1 1 10 100 8 12 16 20 Typical Transfer Characteristics Static Drain to Source on State Resistance vs. Drain Current (Typical) Drain to Source on State Resistance RDS(on) (Ω) Tc = −25°C 50 25°C 75°C 40 30 20 VDS = 10 V Pulse Test 0 2 4 6 8 10 1 0.1 0.01 1 VGS = 10 V Ta = 25°C Pulse Test 10 Gate to Source Voltage VGS (V) Drain Current ID (A) Static Drain to Source on State Resistance vs. Temperature (Typical) Body-Drain Diode Reverse Recovery Time (Typical) 0.5 VGS = 10 V Pulse Test 0.4 0.3 ID = 25 A 0.2 15 A 7.5 A 0.1 0 -25 Reverse Recovery Time trr (ns) Drain Current ID (A) 4 Drain to Source Voltage VDS (V) 10 Static Drain to Source on State Resistance RDS(on) (Ω) 0 Drain to Source Voltage VDS (V) 60 0 0 1000 100 1000 100 di / dt = 100 A / μs VGS = 0, Ta = 25°C 10 0 25 50 75 100 125 150 Case Temperature Tc (°C) R07DS0995EJ0100 Rev.1.00 Jan 09, 2013 1 10 100 Reverse Drain Current IDR (A) Page 3 of 6 H5N3007FL-M0 Preliminary Typical Capacitance vs. Drain to Source Voltage 1000 Coss 100 10 0 Crss VGS = 0 f = 1 MHz Ta = 25°C 100 Reverse Drain Current IDR (A) VGS VDD = 240 V 100 V 300 VDS 50 V 8 100 4 VDD = 240 V 100 V 50 V 20 0 40 0 60 80 Drain to Source Voltage VDS (V) Gate Charge Qg (nC) Reverse Drain Current vs. Source to Drain Voltage (Typical) Gate to Source Cutoff Voltage vs. Case Temperature (Typical) 40 30 20 10 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) R07DS0995EJ0100 Rev.1.00 Jan 09, 2013 16 12 200 150 VGS = 0 Ta = 25°C Pulse Test 0 ID = 15 A Ta = 25 °C 0 50 60 50 400 5 Gate to Source Voltage VGS (V) Ciss Gate to Source Cutoff Voltage VGS(off) (V) Capacitance C (pF) 10000 Drain to Source Voltage VDS (V) Dynamic Input Characteristics (Typical) 100 VDS = 10 V 4 ID = 10 mA 3 1 mA 2 0.1 mA 1 0 -25 0 25 50 75 Case Temperature 100 125 150 Tc (°C) Page 4 of 6 H5N3007FL-M0 Preliminary Normalized Transient Thermal Impedance γs (t) Normalized Transient Thermal Impedance vs. Pulse Width 10 Tc = 25°C 1 D=1 0.5 0.2 θ ch – c(t) = γ s (t) • θ ch – c θ ch – c = 3.57°C/W, Tc = 25°C 0.1 0.1 0.05 0.02 uls ot p 1 0.0 PDM e D= 1sh 0.01 100 μ PW T PW T 1m 10 m 100 m 1 10 100 Pulse Width PW (s) Switching Time Test Circuit Waveform Vout Monitor Vin Monitor 90% D.U.T. RL 10 Ω Vin 10 V Vin Vout 10% 10% 10% VDD = 150 V 90% td(on) R07DS0995EJ0100 Rev.1.00 Jan 09, 2013 tr 90% td(off) tf Page 5 of 6 H5N3007FL-M0 Preliminary Package Dimensions Package Name TO-220FL JEITA Package Code ⎯ Previous Code TO-220FL RENESAS Code PRSS0003AF-A Unit: mm 6.5 ± 0.3 3.0 ± 0.3 2.8 ± 0.2 3.2 ± 0.2 3.6 ± 0.3 12.5 ± 0.5 15.0 ± 0.3 10.0 ± 0.3 MASS[Typ.] 1.5g 1.15 ± 0.2 1.15 ± 0.2 0.75 ± 0.15 0.40 ± 0.15 4.5 ± 0.2 2.54 ± 0.25 2.6 ± 0.2 2.54 ± 0.25 Ordering Information Orderable Part Number H5N3007FL-M0-E#T2 R07DS0995EJ0100 Rev.1.00 Jan 09, 2013 Quantity 50 pcs Shipping Container Tube Page 6 of 6 Notice 1. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. 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