DMP4015SPS 40V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI® Green Product Summary NEW PRODUCT V(BR)DSS -40V Features and Benefits ID RDS(on) max TA = +25°C 11mΩ @ VGS = -10V -17.0A 15mΩ @ VGS = -4.5V -14.5A 100% Unclamped Inductive Switch (UIS) Test In Production Low On-Resistance Fast Switching Speed Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description Mechanical Data This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications DC-DC Converters Power management functions Analog Switch Pin1 ® Case: POWERDI 5060-8 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish – 100% matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.097 grams (approximate) D S D S D S D G D G S Top View Pin Configuration Bottom View Internal Schematic Top View Ordering Information (Note 4 & 5) Part Number DMP4015SPS-13 DMP4015SPSQ-13 Notes: Compliance Standard Automotive Case ® POWERDI 5060-8 ® POWERDI 5060-8 Packaging 2,500 / Tape & Reel 2,500 / Tape & Reel 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. 5. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_grade_definitions/. Marking Information D D D D Logo P4015SP Part no. YY WW Xth week: 01 ~ 53 Year: “09” 2009 “13” = 2013 S S S G POWERDI is a registered trademark of Diodes Incorporated DMP4015SPS Document number: DS35518 Rev. 9 - 2 1 of 6 www.diodes.com November 2013 © Diodes Incorporated DMP4015SPS Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage NEW PRODUCT Continuous Drain Current (Note 6) VGS = -10V TA = +25°C TA = +70°C TA = +25°C TA = +70°C TA = +25°C TA = +70°C TA = +25°C TA = +70°C Steady State t<10s Continuous Drain Current (Note 7) VGS = -10V Steady State t<10s ID Value -40 ±25 -8.5 -6.8 ID -13.0 -10.5 A ID -11.0 -8.7 A A -17.0 -13.5 -100 -3.5 -22 242 ID Pulsed Drain Current (10μs pulse, duty cycle = 1%) Maximum Body Diode Continuous Current (Note 7) Avalanche Current (Note 8) Avalanche Energy (Note 8) Units V V IDM IS IAS EAS A A A A mJ Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol TA = +25°C TA = +70°C Steady state t<10s TA = +25°C TA = +70°C Steady state t<10s Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Total Power Dissipation (Note 7) Thermal Resistance, Junction to Ambient (Note 7) PD RθJA PD RθJA Thermal Resistance, Junction to Case (Note 7) Operating and Storage Temperature Range RθJC TJ, TSTG Value 1.3 0.8 96.4 40.6 2.1 1.4 55.0 24.0 4.15 -55 to +150 Units W °C/W °C/W W °C/W °C/W °C/W °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 9) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 9) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS -40 -1 100 µA VGS(th) Static Drain-Source On-Resistance RDS (ON) |Yfs| VSD -1.5 -2.0 7 9 26 -0.7 -2.5 11 15 -1.0 Ciss Coss Crss RG Qg Qgs Qgd tD(on) tr tD(off) tf 4234 1036 526 7.77 47.5 14.2 13.5 13.2 10.0 302.7 137.9 Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: V nA V mΩ S V Test Condition VGS = 0V, ID = -250μA VDS = -40V, VGS = 0V VGS = 25V, VDS = 0V VDS = VGS, ID = -250A VGS = -10V, ID = -9.8A VGS = -4.5V, ID = -9.8A VDS = -20V, ID = -9.8A VGS = 0V, IS = -1A pF VDS = -20V, VGS = 0V f = 1.0MHz Ω VDS = 0V, VGS = 0V, f = 1.0MHz nC VDS = -20V, VGS = -5V ID = -9.8A ns VGS = -10V, VDD = -20V, RG = 6Ω, ID = -1A, RL = 20Ω 6. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 7. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate 8. UIS in production with L = 0.1mH, TJ = +25°C 9 .Short duration pulse test used to minimize self-heating effect. 10. Guaranteed by design. Not subject to production testing. POWERDI is a registered trademark of Diodes Incorporated DMP4015SPS Document number: DS35518 Rev. 9 - 2 2 of 6 www.diodes.com November 2013 © Diodes Incorporated DMP4015SPS 30 30 -VGS=4.0V 20 -ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) 25 -VGS=3.5V -VGS=4.5V 15 -VGS=10V 10 -VGS=3.0V 5 0 0 0.5 1 1.5 -VDS, DRAIN -SOURCE VOLTAGE(V) Fig. 1 Typical Output Characteristics 15 10 0.015 0.01 0.005 0 0 0 2 RDS(ON), DRAIN-SOURCE ON-RESISTANCE() RDS(ON),DRAIN-SOURCE ON-RESISTANCE() 20 5 0.02 0 5 10 15 20 25 -ID, DRAIN SOURCE CURRENT Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 30 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 1.4 1.2 1 0.8 0.6 -50 0.5 1 1.5 2 2.5 3 3.5 4 4.5 -VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics 0.02 5 T A = 150 C -VGS= 4.5V TA = 125C 0.015 TA = 85C 0.01 TA = 25C TA = -55 C 0.005 0 0 5 10 15 20 25 30 -ID, DRAIN SOURCE CURRENT (A) Fig. 4 Typical On-Resistance vs. Drain Current and Temperature 1.6 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Normalized) NEW PRODUCT 25 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Fig. 5 On-Resistance Variation with Temperature 0.02 -VGS = 4.5V -I D = 5.0A 0.016 0.012 0.008 VGS = 10V ID = 10A 0.004 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Fig. 6 On-Resistance Variation with Temperature POWERDI is a registered trademark of Diodes Incorporated DMP4015SPS Document number: DS35518 Rev. 9 - 2 3 of 6 www.diodes.com November 2013 © Diodes Incorporated 30 2 25 -IS, SOURCE CURRENT (A) -VGS(TH), GATE THRESHOLD VOLTAGE (V) 2.4 1.6 1.2 0.8 20 15 10 5 0.4 0 -50 0 0 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature -25 1000 0.2 0.4 0.6 0.8 1 1.2 -VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current -IDSS, LEAKAGE CURRENT (nA) CT, JUNCTION CAPACITANCE (pF) T A =150°C CISS COSS 100 CRSS 1000 5 10 15 20 25 TA =125°C TA =85°C 100 10 TA =25°C 1 0.1 10 0 1.4 10000 f = 1MHz 5 10 15 20 25 30 -VDS, DRAIN-SOURCE VOLTAGE(V) Fig. 10 Typical Drain-Source Leakage Current vs. Voltage 30 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Junction Capacitance 10 0 90 600 8 6 4 2 80 500 70 EAS 400 60 50 300 40 IAS 200 30 20 100 IAS, AVALANCHE CURRENT (A) EAS, AVALANCHE ENERGY (mJ) Starting Temperature (TJ ) = 25°C VGS, GATE-SOURCE VOLTAGE (V) NEW PRODUCT DMP4015SPS 10 0 0 20 40 60 80 100 Qg, TOTAL GATE CHARGE (nC) Fig. 11 Gate-Charge Characteristics 120 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 INDUCTOR (mH) Fig. 12 Single-Pulse Avalanche Tested 0 POWERDI is a registered trademark of Diodes Incorporated DMP4015SPS Document number: DS35518 Rev. 9 - 2 4 of 6 www.diodes.com November 2013 © Diodes Incorporated DMP4015SPS NEW PRODUCT r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 RJA(t) = r(t) * RJA RJA = 97°C/W D = 0.05 D = 0.02 0.01 P(pk) D = 0.01 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t 1/t2 D = 0.005 DUT mounted on FR-4 PCB with minimum recommended pad layout D = Single Pulse 0.001 0.001 t1 0.01 0.1 1 10 t1, PULSE DURATION TIME (s) Fig. 13 Transient Thermal Response 100 1,000 Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. D Detail A D1 O (4X) c A1 E1 E e O (4X) 1 b (8X) e/2 1 L b2 (4X) D3 A K D2 E3 E2 M M1 Detail A G b3 (4X) POWERDI5060-8 Dim Min Max Typ A 0.90 1.10 1.00 A1 0.00 0.05 – b 0.33 0.51 0.41 b2 0.200 0.350 0.273 b3 0.40 0.80 0.60 c 0.230 0.330 0.277 D 5.15 BSC D1 4.70 5.10 4.90 D2 3.70 4.10 3.90 D3 3.90 4.30 4.10 E 6.15 BSC E1 5.60 6.00 5.80 E2 3.28 3.68 3.48 E3 3.99 4.39 4.19 e 1.27 BSC G 0.51 0.71 0.61 K 0.51 – – L 0.51 0.71 0.61 L1 0.050 0.20 0.175 M 3.235 4.035 3.635 M1 1.00 1.40 1.21 Θ 10º 12º 11º Θ1 6º 8º 7º All Dimensions in mm L1 POWERDI is a registered trademark of Diodes Incorporated DMP4015SPS Document number: DS35518 Rev. 9 - 2 5 of 6 www.diodes.com November 2013 © Diodes Incorporated DMP4015SPS Suggested Pad Layout 4 X Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. 2 Y 3 X 2 X 1 X 4 Y 7 Y 1 G C 6 Y x 4 Y G X NEW PRODUCT 1 Y 3 Y 5 Y Dimensions C G G1 X X1 X2 X3 X4 Y Y1 Y2 Y3 Y4 Y5 Y6 Y7 ︵ ︶ Value (in mm) 1.270 0.660 0.820 0.610 4.100 0.755 4.420 5.610 1.270 0.600 1.020 0.295 1.825 3.810 0.180 6.610 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 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