Diode Semiconductor Korea MBR2070CT - - - MBR20100CT VOLTAGE RANGE: 70 - 100 V CURRENT: 20 A DUAL SCHOTTKY RECTIFIERS FEATURES TO-220AB 2.8± 0.1 High surge capacity. For use in low voltage, high frequency inverters, free 111 wheeling, and polarity protection applications. Metal silicon junction, majority carrier conduction. 4.5± 0.2 10.2± 0.2 1.4± 0.2 19.0± 0.5 High current capacity, low forward voltage drop. Guard ring for over voltage protection. 1 8.9± 0.2 φ 3.8± 0.15 PIN 2 3 3.5± 0.3 13.8± 0.5 2.6± 0.2 MECHANICAL DATA Case:JEDEC TO-220AB,molded plastic body Terminals:Solderable per MIL-STD-750, 11 Method 2026 Polarity: As marked 0.9± 0.1 0.5± 0.1 2.5± 0.1 PIN 1 Positive CT Weight: 0.071 ounce, 2.006 grams PIN 1 PIN 1 PIN 3 CASE PIN 2 PIN 3 Negative CT Suffix "A" CASE PIN 2 PIN 3 Doubler Suffix "D" CASE PIN 2 Dimensions in millimeters Position: Any MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. MBR2070CT MBR2080CT MBR2090CT MBR20100CT UNITS Maximum recurrent peak reverse voltage VRRM 70 80 90 100 V Maximum w orking peak reverse voltage VRWM 49 56 63 70 V Maximum DC blocking voltage VDC 70 80 90 100 V Maximum average forw ard total device1 111rectified current @ TC = 133 IF(AV) 20.0 A Peak forw ard surge current 8.3 ms single half b sine-w ave superimposed on rated load IFSM 150.0 A Maximum forw ard voltage per leg (NOTE 1) 0.85 (IF=10A,TC=25 ) (IF=10A,TC=125 ) (IF=20A,TC=25 ) VF at rated DC blocking voltage @TA=25 @TA=125 0.95 IR 0.1 6.0 Maximum junction capacitance (NOTE2) CT 400 Operating junction temperature range TJ - 55 ---- + 150 TSTG - 55 ---- + 175 Storage temperature range V 0.85 (IF=20A,TC=125 ) Maximum reverse current 0.70 mA pF NOTE: 1. Pulse test:300μs pulse width,1% duty cy cle. 2. VR=5VDC,(test signal range 100KHz to 1MHz www.diode.kr Diode Semiconductor Korea FIG.1 -- FORWARD CURRENT DERATING CURVE MBR2070CT - - - MBR20100CT FIG.2 -- MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT PERLEG cc 175 PEAK FORWARD SURGE CURRENT,AMPERES AVERAGE FORWARD CURRENT,AMPERES 25 Resistive or inductive Load 20 15 10 5 0 0 50 100 150 T J=T Jmax 8.3ms Single Half Sine Wave (JEDEC Method) 150 125 100 75 50 25 1 10 CASE TEMPERATURE NUMBER OF CYCLES AT 60Hz bn INSTANTANEOUS REVERSE CURRENT,MILLIAMPERES INSTANTANEOUS FORWARD CURRENT,AMPERES FIG.3 -- TYPICAL INSTANTANEOUS FORWARD 11111vCHARACTERISTICS PER LEG 40 10 TJ =125 1 00 Pulse Width=300µs 1% Duty Cycle 1 TJ=25 0.1 0.01 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 INSTANTANEOUS FORWARD VOLTAGE,VOLTS FIG.4 -- TYPICAL REVERSE CHARACTERISTICS PER LEG 111 40 TJ=125 10 1 TJ=75 0.1 0.01 TJ=25 0.001 0 20 40 60 80 100 PERCENT OF RATED PEAK REVERSE VOLTAGE, JUNCTION CAPACITANCE, pF 1FIG.5--TYPICAL JUNCTION CAPACITANCE PER LEG 4000 TJ=25 f=1.0MHz Vsig=50MVp-p 1000 100 10 0.1 1 10 100 REVERSE VOLTAGE,VOLTS www.diode.kr