BFR 183 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector current from 2 mA to 30mA • fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFR 183 SOT-23 RHs Q62702-F1316 1=B 2=E 3=C Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO 12 Collector-emitter voltage VCES 20 Collector-base voltage VCBO 20 Emitter-base voltage VEBO 2 Collector current IC 65 Base current IB 5 Total power dissipation Ptot TS ≤ 60 °C Values Unit V mA mW 450 Junction temperature Tj Ambient temperature TA - 65 ... + 150 Storage temperature Tstg - 65 ... + 150 150 °C Thermal Resistance Junction - soldering point 1) RthJS ≤ 200 K/W 1) TS is measured on the collector lead at the soldering point to the pcb. Semiconductor Group 1 Dec-11-1996 BFR 183 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO IC = 1 mA, IB = 0 Collector-emitter cutoff current 12 100 nA - - 100 IEBO µA - - 1 hFE IC = 15 mA, VCE = 8 V Semiconductor Group - ICBO VEB = 1 V, IC = 0 DC current gain µA - VCB = 10 V, IE = 0 Emitter-base cutoff current - ICES VCE = 20 V, VBE = 0 Collector-base cutoff current V 50 2 100 200 Dec-11-1996 BFR 183 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. AC Characteristics Transition frequency fT IC = 25 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance 6 pF - 0.4 0.6 - 0.2 - - 1 - Cce VCE = vbe = 10 V, f = 1 MHz Emitter-base capacitance 8 Ccb VCB = 10 V, f = 1 MHz Collector-emitter capacitance GHz Ceb VEB = 0.5 V, f = 1 MHz F Noise figure dB IC = 5 mA, VCE = 8 V, ZS = ZSopt f = 900 MHz - 1.2 - f = 1.8 GHz - 2 - f = 900 MHz - 16.5 - f = 1.8 GHz - 11 - f = 900 MHz - 14 - f = 1.8 GHz - 8.5 - Power gain 2) Gma IC = 15 mA, VCE = 8 V, ZS = ZSopt ZL = ZLopt Transducer gain |S21e|2 IC = 15 mA, VCE = 8 V, ZS =ZL= 50 Ω 2) Gma = |S21/S12| (k-(k2-1)1/2) Semiconductor Group 3 Dec-11-1996 BFR 183 SPICE Parameters (Gummel-Poon Model, Berkeley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = 1.0345 fA BF = 115.98 - NF = 0.80799 - VAF = 14.772 V IKF = 0.14562 A ISE = 16.818 fA NE = 1.2149 - BR = 10.016 - NR = 0.99543 - VAR = 3.4276 V IKR = 0.013483 A ISC = 1.3559 fA NC = 0.85331 - RB = 1.0112 Ω IRB = 0.43801 mA RBM = 2.5426 Ω RE = 1.3435 Ω RC = 0.20486 Ω CJE = 23.077 fF VJE = 1.0792 V MJE = 0.45354 - TF = 22.746 ps XTF = 0.36823 - VTF = 0.50905 V ITF = 1.8773 mA PTF = 0 deg CJC = 460.11 fF VJC = 1.1967 V MJC = 0.3 - XCJC = 0.053823 - TR = 1.0553 ns CJS = 0 fF VJS = 0.75 V MJS = 0 - XTB = 0 - EG = 1.11 eV XTI = 3 - FC = 0.54852 - TNOM 300 K LBI = 0.85 nH LBO = 0.51 nH LEI = 0.69 nH LEO = 0.61 nH LCI = 0 nH LCO = 0.49 nH CBE = 73 fF CCB = 84 fF CCE = 165 fF All parameters are ready to use, no scalling is necessary. Extracted on behalf of SIEMENS Small Signal Semiconductors by: Institut für Mobil-und Satellitenfunktechnik (IMST) © 1996 SIEMENS AG Package Equivalent Circuit: Valid up to 6 GHz For examples and ready to use parameters please contact your local Siemens distributor or sales office to obtain a Siemens CD-ROM or see Internet: http://www.siemens.de/Semiconductor/products/35/35.htm Semiconductor Group 4 Dec-11-1996 BFR 183 Total power dissipation Ptot = f (TA*, TS) * Package mounted on epoxy 500 mW Ptot 400 TS 350 300 250 200 TA 150 100 50 0 0 20 40 60 80 100 120 °C 150 TA ,TS Permissible Pulse Load RthJS = f (tp) Permissible Pulse Load Ptotmax/PtotDC = f (tp) 10 3 RthJS 10 2 P totmax/PtotDC - K/W 10 2 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 -7 10 10 -6 10 -5 10 Semiconductor Group -4 10 -3 10 -2 -1 10 s 10 tp 0 5 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 -1 10 s 10 tp 0 Dec-11-1996 BFR 183 Collector-base capacitance Ccb = f (VCB) VBE = vbe = 0, f = 1MHz Transition frequency fT = f (IC) VCE = Parameter Ccb 1.1 9 pF GHz 0.9 fT 10V 7 5V 6 3V 0.8 0.7 0.6 5 0.5 4 2V 0.4 3 1V 0.3 0.7V 2 0.2 1 0.1 0.0 0 0 4 8 12 16 V VR 22 0 5 10 15 20 25 Power Gain Gma, Gms = f(IC) Power Gain Gma, Gms = f(IC) f = 0.9GHz f = 1.8GHz VCE = Parameter VCE = Parameter 20 30 35 mA IC 45 12 10V dB dB G 3V G 10V 16 2V 8 3V 14 2V 6 12 1V 4 10 1V 0.7V 2 8 0.7V 6 0 0 5 10 Semiconductor Group 15 20 25 30 35 mA IC 45 0 6 5 10 15 20 25 30 35 mA IC 45 Dec-11-1996 BFR 183 Power Gain Gma, Gms = f(VCE):_____ |S21 |2 Intermodulation Intercept Point IP3=f(IC) = f(VCE):--------- (3rd order, Output, ZS=ZL=50Ω) f = Parameter VCE = Parameter, f = 900MHz 18 32 IC=15mA 8V dBm 0.9GHz dB 28 G IP3 0.9GHZ 14 5V 26 24 3V 22 12 20 1.8GHz 2V 10 18 1.8GHz 16 8 14 1V 12 6 10 4 8 0 2 4 6 8 V 12 0 5 10 15 20 25 30 V CE Power Gain Gma, Gms = f(f) Power Gain |S21|2= f(f) VCE = Parameter VCE = Parameter 32 dB dB IC=15mA 26 S21 26 24 24 22 22 20 20 18 18 16 16 14 14 12 12 10 10 8 8 6 10V 1V 0.7V 6 4 2 0.0 40 30 IC=15mA 28 G mA IC 0.5 1.0 Semiconductor Group 1.5 2.0 2.5 GHz f 10V 4 2 0 0.0 3.5 7 1V 0.7V 0.5 1.0 1.5 2.0 2.5 GHz f 3.5 Dec-11-1996