OSC-2.0SM NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .230 2L FLG The ASI OSC-2.0SM is a high performance silicon transistor designed for high power oscillator applications to 3.0 GHz with typical RF power of 2.0W A ØD B .060 x 45° CHAMFER C E FEATURES: G L • POUT = 2.0 tTyp. @ 2.5 GHz • Common Collector • Low thermal resistance • Omnigold™ Metalization System VCEO 640 mA 22 V 3.5 V TJ -65 °C to +200 °C TSTG -65 °C to +200 °C θJC 7.0 °C/W CHARACTERISTICS inches / mm inches / mm .032 / 0.81 B .740 / 18.80 C .245 / 6.22 D .128 / 3.25 .255 / 6.48 .132 / 3.35 .125 / 3.18 .117 / 2.97 .110 / 2.79 .117 / 2.97 H .560 / 14.22 .570 / 14.48 I .790 / 20.07 .810 / 20.57 J .225 / 5.72 .235 / 5.97 K .165 / 4.19 .185 / 4.70 L .003 / 0.08 .007 / 0.18 M .058 / 1.47 .068 / 1.73 N .119 / 3.02 .135 / 3.43 P .149 / 3.78 .187 / 4.75 ORDER CODE: ASI10639 TC = 25 °C NONETEST CONDITIONS SYMBOL MAXIMUM MINIMUM .028 / 0.71 G 45 V NP A E VEBO I K DIM F VCBO J M MAXIMUM RATINGS IC F H MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 2.0 mA 45 V BVCEO IC = 40.0 mA 22 V BVEBO IE = 0.5 mA 3.5 V ICBO VCB = 28 V hFE VCE = 5.0 V COB VCB = 28 V PG ηC VCC = 21 V POUT = 2.5 W IC = 200 mA 20 f = 1.0 MHz ICQ = 300 mA f = 2.0 GHz mA 120 --- 7 pF 30 dB % 4.5 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 640 REV. E 1/2 ERROR! REFERENCE SOURCE NOT FOUND. OSC-2.0SM A D V A N C E D S E M I C O N D U C T O R, I N C. REV. E 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 2/2 Specifications are subject to change without notice.