ASI OSC-2.0SM Npn silicon rf power transistor Datasheet

OSC-2.0SM
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
PACKAGE STYLE .230 2L FLG
The ASI OSC-2.0SM is a high
performance silicon transistor
designed for high power oscillator
applications to 3.0 GHz with typical RF
power of 2.0W
A
ØD
B
.060 x 45°
CHAMFER
C
E
FEATURES:
G
L
• POUT = 2.0 tTyp. @ 2.5 GHz
• Common Collector
• Low thermal resistance
• Omnigold™ Metalization System
VCEO
640 mA
22 V
3.5 V
TJ
-65 °C to +200 °C
TSTG
-65 °C to +200 °C
θJC
7.0 °C/W
CHARACTERISTICS
inches / mm
inches / mm
.032 / 0.81
B
.740 / 18.80
C
.245 / 6.22
D
.128 / 3.25
.255 / 6.48
.132 / 3.35
.125 / 3.18
.117 / 2.97
.110 / 2.79
.117 / 2.97
H
.560 / 14.22
.570 / 14.48
I
.790 / 20.07
.810 / 20.57
J
.225 / 5.72
.235 / 5.97
K
.165 / 4.19
.185 / 4.70
L
.003 / 0.08
.007 / 0.18
M
.058 / 1.47
.068 / 1.73
N
.119 / 3.02
.135 / 3.43
P
.149 / 3.78
.187 / 4.75
ORDER CODE: ASI10639
TC = 25 °C
NONETEST CONDITIONS
SYMBOL
MAXIMUM
MINIMUM
.028 / 0.71
G
45 V
NP
A
E
VEBO
I
K
DIM
F
VCBO
J
M
MAXIMUM RATINGS
IC
F
H
MINIMUM TYPICAL MAXIMUM
UNITS
BVCBO
IC = 2.0 mA
45
V
BVCEO
IC = 40.0 mA
22
V
BVEBO
IE = 0.5 mA
3.5
V
ICBO
VCB = 28 V
hFE
VCE = 5.0 V
COB
VCB = 28 V
PG
ηC
VCC = 21 V
POUT = 2.5 W
IC = 200 mA
20
f = 1.0 MHz
ICQ = 300 mA
f = 2.0 GHz
mA
120
---
7
pF
30
dB
%
4.5
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
640
REV. E
1/2
ERROR! REFERENCE SOURCE
NOT FOUND.
OSC-2.0SM
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. E
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
2/2
Specifications are subject to change without notice.
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