FDMS7656AS N-Channel PowerTrench® SyncFET™ 30 V, 49 A, 1.8 mΩ Features General Description The FDMS7656AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode. Max rDS(on) = 1.8 mΩ at VGS = 10 V, ID = 30 A Max rDS(on) = 1.9 mΩ at VGS = 7 V, ID = 27 A Advanced Package and Silicon combination for low rDS(on) and high efficiency SyncFET Schottky Body Diode MSL1 robust package design Applications 100% UIL tested Synchronous Rectifier for DC/DC Converters RoHS Compliant Notebook Vcore/ GPU low side switch Networking Point of Load low side switch Telecom secondary side rectification Bottom Top Pin 1 S D D D S S G D 5 4 G D 6 3 S D 7 2 S D 8 1 S D MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage (Note 4) Drain Current -Continuous (Package limited) ID TC = 25 °C -Continuous (Silicon limited) TC = 25 °C -Continuous TA = 25 °C MOSFET dv/dt EAS Single Pulse Avalanche Energy PD TJ, TSTG Units V ±20 V 49 194 (Note 1a) -Pulsed dv/dt Ratings 30 31 A 180 (Note 3) Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C 1.3 V/ns 242 mJ 96 (Note 1a) Operating and Storage Junction Temperature Range 2.5 -55 to +150 W °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient 1.3 (Note 1a) 50 °C/W Package Marking and Ordering Information Device Marking FDMS7656AS Device FDMS7656AS ©2009 Fairchild Semiconductor Corporation FDMS7656AS Rev.C Package Power 56 1 Reel Size 13 ’’ Tape Width 12 mm Quantity 3000 units www.fairchildsemi.com FDMS7656AS N-Channel PowerTrench® SyncFET™ September 2009 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 1 mA, VGS = 0 V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient 30 V ID = 10 mA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 500 µA IGSS Gate to Source Leakage Current, Forward VGS = 20 V, VDS = 0 V 100 nA 3.0 V 19 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 1 mA ∆VGS(th) ∆TJ Gate to Source Threshold Voltage Temperature Coefficient ID = 10 mA, referenced to 25 °C rDS(on) Static Drain to Source On Resistance gFS Forward Transconductance 1.2 1.6 -5 mV/°C VGS = 10 V, ID = 30 A 1.3 1.8 VGS = 7 V, ID = 27 A 1.5 1.9 VGS = 4.5 V, ID = 25 A 1.6 2.0 VGS = 10 V, ID = 30 A, TJ = 125 °C 1.8 2.5 VDS = 5 V, ID = 30 A 161 mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 15 V, VGS = 0 V, f = 1 MHz 6545 8705 pF 2465 3280 pF 210 315 pF 0.5 1.1 Ω 22 35 ns Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg VDD = 15 V, ID = 30 A, VGS = 10 V, RGEN = 6 Ω 12 21 ns 50 80 ns 7 13 ns Total Gate Charge VGS = 0 V to 10 V 95 133 nC Qg Total Gate Charge 60 Gate to Source Charge VGS = 0 V to 4.5 V VDD = 15 V, ID = 30 A 43 Qgs Qgd Gate to Drain “Miller” Charge nC 18.2 nC 9.1 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 2 A (Note 2) 0.37 0.7 VGS = 0 V, IS = 30 A (Note 2) 0.74 1.2 IF = 30 A, di/dt = 300 A/µs V 50 81 ns 84 136 nC Notes: 1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. a. 50 °C/W when mounted on a 1 in2 pad of 2 oz copper. b. 125 °C/W when mounted on a minimum pad of 2 oz copper. 2. Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%. 3. EAS of 242 mJ is based on starting TJ = 25 °C, L = 1 mH, IAS = 22 A, VDD = 27 V, VGS = 10 V. 100% test at L = 0.3 mH, IAS = 34 A. 4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied. FDMS7656AS Rev.C 2 www.fairchildsemi.com FDMS7656AS N-Channel PowerTrench® SyncFET™ Electrical Characteristics TJ = 25 °C unless otherwise noted 6 VGS = 10 V 150 ID, DRAIN CURRENT (A) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 180 VGS = 4.5 V VGS = 4 V 120 VGS = 3.5 V VGS = 3 V 90 60 PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX 30 0 0.0 0.5 1.0 1.5 PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX 5 VGS = 3 V 4 3 VGS = 3.5 V 2 VGS = 4 V 1 2.0 0 30 VDS, DRAIN TO SOURCE VOLTAGE (V) 90 120 150 180 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.5 6 ID = 30 A VGS = 10 V 1.4 rDS(on), DRAIN TO 1.3 1.2 1.1 1.0 0.9 0.8 0.7 -75 -50 SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 60 ID, DRAIN CURRENT (A) Figure 1. On Region Characteristics ID = 30 A 180 TJ = 125 oC 2 TJ = 25 oC 0 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) 2 IS, REVERSE DRAIN CURRENT (A) 120 125 oC 90 TJ = 25 oC 60 TJ = -55 oC 30 0 1 2 3 200 100 8 10 VGS = 0 V 10 TJ = 125 oC 1 TJ = 25 oC 0.1 TJ = -55 oC 0.01 0.001 0.0 4 VGS, GATE TO SOURCE VOLTAGE (V) 0.2 0.4 0.6 0.8 1.0 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics FDMS7656AS Rev.C 6 Figure 4. On-Resistance vs Gate to Source Voltage VDS = 5 V TJ = 4 VGS, GATE TO SOURCE VOLTAGE (V) PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX 150 PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX 4 Figure 3. Normalized On Resistance vs Junction Temperature ID, DRAIN CURRENT (A) VGS = 10 V VGS = 4.5 V 0 Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3 www.fairchildsemi.com FDMS7656AS N-Channel PowerTrench® SyncFET™ Typical Characteristics TJ = 25 °C unless otherwise noted 10000 ID = 30 A Ciss 8 VDD = 10 V CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 VDD = 20 V 6 VDD = 15 V 4 Coss 1000 2 f = 1 MHz VGS = 0 V 0 20 40 60 80 100 1 30 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 200 ID, DRAIN CURRENT (A) 50 IAS, AVALANCHE CURRENT (A) Crss 100 0.1 0 TJ = 25 oC 10 TJ = 100 oC TJ = 125 oC 150 VGS = 10 V 100 VGS = 4.5 V 50 o Limited by Package 1 0.01 0.1 1 10 100 0 25 1000 50 RθJC = 1.3 C/W 75 100 125 150 o TC, CASE TEMPERATURE ( C) tAV, TIME IN AVALANCHE (ms) Figure 9. Unclamped Inductive Switching Capability Figure 10. Maximum Continuous Drain Current vs Case Temperature 1000 P(PK), PEAK TRANSIENT POWER (W) ID, DRAIN CURRENT (A) 100 1 ms 10 10 ms 1 THIS AREA IS LIMITED BY rDS(on) 0.1 100 ms 1s SINGLE PULSE TJ = MAX RATED 10 s RθJA = 125 oC/W DC TC = 25 oC 0.01 0.01 0.1 1 10 100 200 100 10 SINGLE PULSE RθJA = 125 oC/W 1 TC = 25 oC 0.5 -3 10 10 -2 -1 10 1 10 100 1000 t, PULSE WIDTH (sec) VDS, DRAIN to SOURCE VOLTAGE (V) Figure 11. Forward Bias Safe Operating Area FDMS7656AS Rev.C VGS = 10 V Figure 12. Single Pulse Maximum Power Dissipation 4 www.fairchildsemi.com FDMS7656AS N-Channel PowerTrench® SyncFET™ Typical Characteristics TJ = 25 °C unless otherwise noted 2 NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 0.01 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE o RθJA = 125 C/W 0.001 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Ambient Transient Thermal Response Curve FDMS7656AS Rev.C 5 www.fairchildsemi.com FDMS7656AS N-Channel PowerTrench® SyncFET™ Typical Characteristics TJ = 25 °C unless otherwise noted SyncFET Schottky body diode Characteristics Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device. Fairchild’s SyncFET process embeds a Schottky diode in parallel with PowerTrench MoSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 14 shows the reverses recovery characteristic of the FDMS7656AS. 30 IDSS, REVERSE LEAKAGE CURRENT (A) -2 30 CURRENT (A) 25 di/dt = 300 A/µs 20 15 10 5 0 -5 0 50 100 150 200 250 TIME (ns) TJ = 125 oC TJ = 100 oC -3 10 -4 10 TJ = 25 oC -5 10 0 5 10 15 20 25 30 VDS, REVERSE VOLTAGE (V) Figure 14. FDMS7656AS SyncFET body diode reverse recovery characteristic FDMS7656AS Rev.C 10 Figure 15. SyncFET body diode reverses leakage versus drain-source voltage 6 www.fairchildsemi.com FDMS7656AS N-Channel PowerTrench® SyncFET™ Typical Characteristics (continued) FDMS7656AS N-Channel PowerTrench® SyncFET™ Dimensional Outline and Pad Layout FDMS7656AS Rev.C 7 www.fairchildsemi.com tm tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. 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Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I41 FDMS7656AS Rev.C 8 www.fairchildsemi.com FDMS7656AS N-Channel PowerTrench® SyncFET™ TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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