Intersil BUZ11 30a, 50v, 0.040 ohm, n-channel power mosfet Datasheet

BUZ11
Data Sheet
June 1999
30A, 50V, 0.040 Ohm, N-Channel Power
MOSFET
Features
This is an N-Channel enhancement mode silicon gate power
field effect transistor designed for applications such as
switching regulators, switching converters, motor drivers,
relay drivers and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
This type can be operated directly from integrated circuits.
• rDS(ON) = 0.040Ω
File Number 2253.2
• 30A, 50V
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
Formerly developmental type TA9771.
• Majority Carrier Device
Ordering Information
PART NUMBER
BUZ11
PACKAGE
TO-220AB
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
BRAND
BUZ11
NOTE: When ordering, use the entire part number.
Symbol
D
G
S
Packaging
JEDEC TO-220AB
SOURCE
DRAIN
GATE
DRAIN (FLANGE)
4-5
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
BUZ11
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Continuous Drain Current TC = 30oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
DIN Humidity Category - DIN 40040 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
IEC Climatic Category - DIN IEC 68-1. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
BUZ11
50
50
30
120
±20
75
0.6
-55 to 150
E
55/150/56
UNITS
V
V
A
A
V
W
W/oC
oC
300
260
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications
TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BVDSS
ID = 250µA, VGS = 0V
50
-
-
V
Gate Threshold Voltage
VGS(TH)
VGS = VDS, ID = 1mA (Figure 9)
2.1
3
4
V
IDSS
TJ = 25oC, VDS = 50V, VGS = 0V
-
20
250
µA
TJ = 125oC, VDS = 50V, VGS = 0V
-
100
1000
µA
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Forward Transconductance (Note 2)
Turn-On Delay Time
VGS = 20V, VDS = 0V
-
10
100
nA
rDS(ON)
IGSS
ID = 15A, VGS = 10V (Figure 8)
-
0.03
0.04
Ω
gfs
VDS = 25V, ID = 15A (Figure 11)
4
8
-
S
VCC = 30V, ID ≈ 3A, VGS = 10V, RGS = 50Ω,
RL = 10Ω
-
30
45
ns
td(ON)
Rise Time
tr
Turn-Off Delay Time
-
70
110
ns
td(OFF)
-
180
230
ns
tf
-
130
170
ns
-
1500
2000
pF
pF
Fall Time
Input Capacitance
CISS
VDS = 25V, VGS = 0V, f = 1MHz (Figure 10)
Output Capacitance
COSS
-
750
1100
Reverse Transfer Capacitance
CRSS
-
250
400
pF
Thermal Resistance Junction to Case
RθJC
≤ 1.67
oC/W
Thermal Resistance Junction to Ambient
RθJA
≤ 75
oC/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
Continuous Source to Drain Current
ISD
Pulsed Source to Drain Current
ISDM
Source to Drain Diode Voltage
VSD
Reverse Recovery Time
trr
Reverse Recovery Charge
QRR
TEST CONDITIONS
TC = 25oC
TC = 25oC
TJ = 25oC, ISD = 60A, VGS = 0V
TJ = 25oC, ISD = 30A, dISD/dt = 100A/µs,
VR = 30V
MIN
TYP
MAX
UNITS
-
-
30
A
-
-
120
A
-
1.7
2.6
V
-
200
-
ns
-
0.25
-
µC
NOTES:
2. Pulse Test: Pulse width ≤ 300ms, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
4-6
BUZ11
Typical Performance Curves
Unless Otherwise Specified
40
VGS > 10V
1.0
ID, DRAIN CURRENT (A)
POWER DISSIPATION MULTIPLIER
1.2
0.8
0.6
0.4
30
20
10
0.2
0
0
25
50
75
100
TA , CASE TEMPERATURE (oC)
125
0
150
ZθJC, TRANSIENT THERMAL IMPEDANCE
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
1
0
50
100
TC, CASE TEMPERATURE (oC)
150
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
0.5
0.2
0.1
0.1
PDM
0.05
0.02
0.01
t1
t2
SINGLE PULSE
0.01
10-5
10-4
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC + TC
10-3
10-2
10-1
t, RECTANGULAR PULSE DURATION (s)
100
101
FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE
60
PD = 75W
OPERATION IN THIS
AREA MAY BE LIMITED
BY rDS(ON)
2.5µs
102
10µs
100µs
101
1ms
TC = 25oC
TJ = MAX RATED
SINGLE PULSE
100
100
101
VDS, DRAIN TO SOURCE VOLTAGE (V)
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
10V
40
VGS = 8.0V
VGS = 7.5V
VGS = 7.0V
VGS = 6.5V
30
20
VGS = 6.0V
VGS = 5.5V
VGS = 5.0V
VGS = 4.5V
VGS = 4.0V
10
10ms
100ms
DC
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
4-7
VGS = 20V
50
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
103
102
0
0
1
2
3
4
5
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 5. OUTPUT CHARACTERISTICS
6
BUZ11
20
Unless Otherwise Specified (Continued)
0.15
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VDS = 25V
rDS(ON), ON-STATE RESISTANCE (Ω)
IDS(ON), DRAIN TO SOURCE CURRENT (A)
Typical Performance Curves
15
10
5
0
0
1
2
3
4
5
6
VGS, GATE TO SOURCE VOLTAGE (V)
7
0.06
0.04
0.02
50
100
150
VDS = VGS
ID = 1mA
3
2
1
0
-50
10
gfs, TRANSCONDUCTANCE (S)
C, CAPACITANCE (nF)
CISS
COSS
CRSS
10-1
VGS = 0V, f = 1MHz
CISS = CGS + CGD
CRSS = CGD
COSS ≈ CDS + CGD
10
20
30
40
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 10. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
4-8
60
0
50
100
150
FIGURE 9. GATE THRESHOLD VOLTAGE vs JUNCTION
TEMPERATURE
101
0
20
40
ID, DRAIN CURRENT (A)
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs
JUNCTION TEMPERATURE
10-2
0
4
TJ, JUNCTION TEMPERATURE (oC)
100
10V
20V
0
VGS(TH), GATE THRESHOLD VOLTAGE (V)
rDS(ON), DRAIN TO SOURCE
ON RESISTANCE (Ω)
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
ID = 15A, VGS = 10V
0
0.05
FIGURE 7. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
0.08
-50
5.5V
6V
6.5V
7V
7.5V
8V
9V
0.10
8
FIGURE 6. TRANSFER CHARACTERISTICS
0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VGS = 5V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VDS = 25V
8
TJ = 25oC
6
4
2
0
0
5
10
ID, DRAIN CURRENT (A)
15
FIGURE 11. TRANSCONDUCTANCE vs DRAIN CURRENT
20
BUZ11
Typical Performance Curves
15
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
TJ = 25oC
102
TJ = 150oC
101
100
10-1
0
0.5
1.0
1.5
2.0
2.5
VSD, SOURCE TO DRAIN VOLTAGE (V)
ID = 45A
VGS, GATE TO SOURCE VOLTAGE (V)
ISD, SOURCE TO DRAIN CURRENT (A)
103
Unless Otherwise Specified (Continued)
VDS = 10V
10
VDS = 40V
5
0
3.0
FIGURE 12. SOURCE TO DRAIN DIODE VOLTAGE
0
10
20
30
Qg, GATE CHARGE (nC)
40
50
FIGURE 13. GATE TO SOURCE VOLTAGE vs GATE CHARGE
Test Circuits and Waveforms
tON
tOFF
td(ON)
td(OFF)
tf
tr
VDS
RL
90%
90%
+
RG
-
VDD
10%
10%
0
90%
DUT
VGS
VGS
0
FIGURE 14. SWITCHING TIME TEST CIRCUIT
0.2µF
50%
PULSE WIDTH
10%
FIGURE 15. RESISTIVE SWITCHING WAVEFORMS
VDS
(ISOLATED
SUPPLY)
CURRENT
REGULATOR
12V
BATTERY
50%
VDD
Qg(TOT)
SAME TYPE
AS DUT
50kΩ
Qgd
0.3µF
VGS
Qgs
D
VDS
DUT
G
0
Ig(REF)
S
0
IG CURRENT
SAMPLING
RESISTOR
VDS
ID CURRENT
SAMPLING
RESISTOR
FIGURE 16. GATE CHARGE TEST CIRCUIT
4-9
Ig(REF)
0
FIGURE 17. GATE CHARGE WAVEFORMS
BUZ11
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
Sales Office Headquarters
NORTH AMERICA
Intersil Corporation
P. O. Box 883, Mail Stop 53-204
Melbourne, FL 32902
TEL: (407) 724-7000
FAX: (407) 724-7240
4-10
EUROPE
Intersil SA
Mercure Center
100, Rue de la Fusee
1130 Brussels, Belgium
TEL: (32) 2.724.2111
FAX: (32) 2.724.22.05
ASIA
Intersil (Taiwan) Ltd.
7F-6, No. 101 Fu Hsing North Road
Taipei, Taiwan
Republic of China
TEL: (886) 2 2716 9310
FAX: (886) 2 2715 3029
Similar pages