BUZ11 Data Sheet June 1999 30A, 50V, 0.040 Ohm, N-Channel Power MOSFET Features This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. This type can be operated directly from integrated circuits. • rDS(ON) = 0.040Ω File Number 2253.2 • 30A, 50V • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance Formerly developmental type TA9771. • Majority Carrier Device Ordering Information PART NUMBER BUZ11 PACKAGE TO-220AB • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” BRAND BUZ11 NOTE: When ordering, use the entire part number. Symbol D G S Packaging JEDEC TO-220AB SOURCE DRAIN GATE DRAIN (FLANGE) 4-5 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999 BUZ11 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current TC = 30oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG DIN Humidity Category - DIN 40040 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IEC Climatic Category - DIN IEC 68-1. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg BUZ11 50 50 30 120 ±20 75 0.6 -55 to 150 E 55/150/56 UNITS V V A A V W W/oC oC 300 260 oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain to Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V 50 - - V Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 1mA (Figure 9) 2.1 3 4 V IDSS TJ = 25oC, VDS = 50V, VGS = 0V - 20 250 µA TJ = 125oC, VDS = 50V, VGS = 0V - 100 1000 µA Zero Gate Voltage Drain Current Gate to Source Leakage Current Drain to Source On Resistance (Note 2) Forward Transconductance (Note 2) Turn-On Delay Time VGS = 20V, VDS = 0V - 10 100 nA rDS(ON) IGSS ID = 15A, VGS = 10V (Figure 8) - 0.03 0.04 Ω gfs VDS = 25V, ID = 15A (Figure 11) 4 8 - S VCC = 30V, ID ≈ 3A, VGS = 10V, RGS = 50Ω, RL = 10Ω - 30 45 ns td(ON) Rise Time tr Turn-Off Delay Time - 70 110 ns td(OFF) - 180 230 ns tf - 130 170 ns - 1500 2000 pF pF Fall Time Input Capacitance CISS VDS = 25V, VGS = 0V, f = 1MHz (Figure 10) Output Capacitance COSS - 750 1100 Reverse Transfer Capacitance CRSS - 250 400 pF Thermal Resistance Junction to Case RθJC ≤ 1.67 oC/W Thermal Resistance Junction to Ambient RθJA ≤ 75 oC/W Source to Drain Diode Specifications PARAMETER SYMBOL Continuous Source to Drain Current ISD Pulsed Source to Drain Current ISDM Source to Drain Diode Voltage VSD Reverse Recovery Time trr Reverse Recovery Charge QRR TEST CONDITIONS TC = 25oC TC = 25oC TJ = 25oC, ISD = 60A, VGS = 0V TJ = 25oC, ISD = 30A, dISD/dt = 100A/µs, VR = 30V MIN TYP MAX UNITS - - 30 A - - 120 A - 1.7 2.6 V - 200 - ns - 0.25 - µC NOTES: 2. Pulse Test: Pulse width ≤ 300ms, duty cycle ≤ 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3). 4-6 BUZ11 Typical Performance Curves Unless Otherwise Specified 40 VGS > 10V 1.0 ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER 1.2 0.8 0.6 0.4 30 20 10 0.2 0 0 25 50 75 100 TA , CASE TEMPERATURE (oC) 125 0 150 ZθJC, TRANSIENT THERMAL IMPEDANCE FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE 1 0 50 100 TC, CASE TEMPERATURE (oC) 150 FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE 0.5 0.2 0.1 0.1 PDM 0.05 0.02 0.01 t1 t2 SINGLE PULSE 0.01 10-5 10-4 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC + TC 10-3 10-2 10-1 t, RECTANGULAR PULSE DURATION (s) 100 101 FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE 60 PD = 75W OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) 2.5µs 102 10µs 100µs 101 1ms TC = 25oC TJ = MAX RATED SINGLE PULSE 100 100 101 VDS, DRAIN TO SOURCE VOLTAGE (V) PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 10V 40 VGS = 8.0V VGS = 7.5V VGS = 7.0V VGS = 6.5V 30 20 VGS = 6.0V VGS = 5.5V VGS = 5.0V VGS = 4.5V VGS = 4.0V 10 10ms 100ms DC FIGURE 4. FORWARD BIAS SAFE OPERATING AREA 4-7 VGS = 20V 50 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 103 102 0 0 1 2 3 4 5 VDS, DRAIN TO SOURCE VOLTAGE (V) FIGURE 5. OUTPUT CHARACTERISTICS 6 BUZ11 20 Unless Otherwise Specified (Continued) 0.15 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX VDS = 25V rDS(ON), ON-STATE RESISTANCE (Ω) IDS(ON), DRAIN TO SOURCE CURRENT (A) Typical Performance Curves 15 10 5 0 0 1 2 3 4 5 6 VGS, GATE TO SOURCE VOLTAGE (V) 7 0.06 0.04 0.02 50 100 150 VDS = VGS ID = 1mA 3 2 1 0 -50 10 gfs, TRANSCONDUCTANCE (S) C, CAPACITANCE (nF) CISS COSS CRSS 10-1 VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS ≈ CDS + CGD 10 20 30 40 VDS, DRAIN TO SOURCE VOLTAGE (V) FIGURE 10. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE 4-8 60 0 50 100 150 FIGURE 9. GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE 101 0 20 40 ID, DRAIN CURRENT (A) TJ, JUNCTION TEMPERATURE (oC) FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE 10-2 0 4 TJ, JUNCTION TEMPERATURE (oC) 100 10V 20V 0 VGS(TH), GATE THRESHOLD VOLTAGE (V) rDS(ON), DRAIN TO SOURCE ON RESISTANCE (Ω) PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX ID = 15A, VGS = 10V 0 0.05 FIGURE 7. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT 0.08 -50 5.5V 6V 6.5V 7V 7.5V 8V 9V 0.10 8 FIGURE 6. TRANSFER CHARACTERISTICS 0 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX VGS = 5V PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX VDS = 25V 8 TJ = 25oC 6 4 2 0 0 5 10 ID, DRAIN CURRENT (A) 15 FIGURE 11. TRANSCONDUCTANCE vs DRAIN CURRENT 20 BUZ11 Typical Performance Curves 15 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX TJ = 25oC 102 TJ = 150oC 101 100 10-1 0 0.5 1.0 1.5 2.0 2.5 VSD, SOURCE TO DRAIN VOLTAGE (V) ID = 45A VGS, GATE TO SOURCE VOLTAGE (V) ISD, SOURCE TO DRAIN CURRENT (A) 103 Unless Otherwise Specified (Continued) VDS = 10V 10 VDS = 40V 5 0 3.0 FIGURE 12. SOURCE TO DRAIN DIODE VOLTAGE 0 10 20 30 Qg, GATE CHARGE (nC) 40 50 FIGURE 13. GATE TO SOURCE VOLTAGE vs GATE CHARGE Test Circuits and Waveforms tON tOFF td(ON) td(OFF) tf tr VDS RL 90% 90% + RG - VDD 10% 10% 0 90% DUT VGS VGS 0 FIGURE 14. SWITCHING TIME TEST CIRCUIT 0.2µF 50% PULSE WIDTH 10% FIGURE 15. RESISTIVE SWITCHING WAVEFORMS VDS (ISOLATED SUPPLY) CURRENT REGULATOR 12V BATTERY 50% VDD Qg(TOT) SAME TYPE AS DUT 50kΩ Qgd 0.3µF VGS Qgs D VDS DUT G 0 Ig(REF) S 0 IG CURRENT SAMPLING RESISTOR VDS ID CURRENT SAMPLING RESISTOR FIGURE 16. GATE CHARGE TEST CIRCUIT 4-9 Ig(REF) 0 FIGURE 17. GATE CHARGE WAVEFORMS BUZ11 All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. 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