LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L2SC2412KQLT1G Series L2SC2412KQLT1G Series • We declare that the material of product compliance with RoHS requirements. • S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. ORDERING INFORMATION Device Marking L2SC2412KQLT1G S-L2SC2412KQLT1G L2SC2412KQLT3G S-L2SC2412KQLT3G L2SC2412KRLT1G S-L2SC2412KRLT1G L2SC2412KRLT3G S-L2SC2412KRLT3G L2SC2412KSLT1G S-L2SC2412KSLT1G L2SC2412KSLT3G S-L2SC2412KSLT3G Shipping BQ 3000 Tape & Reel BQ 10000 Tape & Reel BR 3000 Tape & Reel BR 10000 Tape & Reel G1F 3000 Tape & Reel G1F 10000 Tape & Reel 3 1 2 SOT– 23 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V CEO 50 V Collector–Base Voltage V CBO 60 V Emitter–Base Voltage V 7.0 V EBO 3 COLLECTOR 1 BASE Collector Current — Continuous IC 150 mAdc Collector power dissipation PC 0.2 W Junction temperature Tj 150 °C Storage temperature T stg -55 ~+150 °C 2 EMITTER DEVICE MARKING L2SC2412KQLT1G =BQ L2SC2412KRLT1G =BR L2SC2412KSLT1G =G1F ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Symbol Collector–Emitter Breakdown Voltage (IC = 1 mA) Emitter–Base Breakdown Voltage (IE = 50 µA) Collector–Base Breakdown Voltage (IC = 50 µA) Collector Cutoff Current (VCB = 60 V) Emitter cutoff current (VEB = 7 V) Collector-emitter saturation voltage (IC/ IB = 50 mA / 5m A) DC current transfer ratio (V CE = 6 V, I C= 1mA) Transition frequency (V CE = 12 V, I E= – 2mA, f =30MHz ) Output capacitance (V CB = 12 V, I E= 0A, f =1MHz ) Min Typ Max Unit V (BR)CEO 50 — — V V (BR)EBO 7 — — V V (BR)CBO 60 — — V I CBO — — 0.1 µA I EBO — — 0.1 µA — — 0.4 V h FE 120 –– 560 –– fT — 180 –– MHz — 2.0 3.5 pF V CE(sat) C ob h FE values are classified as follows: * hFE Q 120~270 R 180~390 S 270~560 Rev.O 1/4 LESHAN RADIO COMPANY, LTD. S-L2SC2412KQLT1G Series L2SC2412KQLT1G Series Fig.1 Grounded emitter propagation characteristics Fig.2 Grounded emitter output characteristics( ) 50 I C, COLLECTOR CURRENT (mA) 10 1 25°C – 55°C 50 T A = 100° C I C, COLLECTOR CURRENT (mA) 20 2 0.50mA 100 VCE= 6 V 0.5 T A = 25°C 80 60 40 20 0.2 0.1 0 0 –0.2 –0.4 –0.6 –0.8 –1.0 –1.2 –1.4 0 –1.6 0.4 V BE , BASE TO EMITTER VOLTAGE(V) Fig.3 Grounded emitter output characteristics( ) 1.2 1.6 2.0 Fig.4 DC current gain vs. collector current ( ) 10 I C, COLLECTOR CURRENT (mA) 0.8 V CE , COLLECTOR TO EMITTER VOLTAGE (V) 500 h FE, DC CURRENT GAIN 8 6 4 2 200 100 50 20 0 0 4 8 12 16 10 20 0.2 0.5 V CE , COLLECTOR TO EMITTER VOLTAGE (V) V CE(sat), COLLECTOR SATURATION VOLTAGE(V) h FE, DC CURRENT GAIN 200 100 50 20 10 0.2 0.5 1 2 5 10 20 50 I C, COLLECTOR CURRENT (mA) 100 200 2 5 10 20 50 100 200 Fig.6 Collector-emitter saturation voltage vs. collector current Fig.5 DC current gain vs. collector current ( ) 500 1 I C, COLLECTOR CURRENT (mA) 0.5 0.2 0.1 0.05 0.02 0.01 0.2 0.5 1 2 5 10 20 50 100 I C, COLLECTOR CURRENT (mA) Rev.O 2/4 200 LESHAN RADIO COMPANY, LTD. S-L2SC2412KQLT1G Series L2SC2412KQLT1G Series Fig.8 Collector-emitter saturation voltage vs. collector current ( ) V CE(sat), COLLECTOR SATURATION VOLTAGE(V) V CE(sat), COLLECTOR SATURATION VOLTAGE(V) Fig.7 Collector-emitter saturation voltage vs. collector current ( ) 0.5 0.2 0.1 0.05 0.02 0.01 0.2 0.5 1 2 5 10 20 50 100 200 0.5 0.2 0.1 0.05 0.02 0.01 0.2 0.5 I C, COLLECTOR CURRENT (mA) 100 50 –5 –10 –20 –50 –100 I E, EMITTER CURRENT (mA) C ob , COLLECTOR OUTPUT CAPACITANCE( pF) C ib , EMITTER INPUT CAPACITANCE (pF) f r , TRANSITION FREQUENCY(MHz) 200 –2 5 10 20 50 100 Fig.10 Collector output capacitance vs.collector-base voltage Emitter inputcapacitance vs. emitter-base voltage 500 –1 2 I C, COLLECTOR CURRENT (mA) Fig.9 Gain bandwidth product vs. emitter current –0.5 1 20 10 5 2 1 0.2 0.5 1 2 5 10 20 V CB, COLLECTOR TO BASE VOLTAGE (V) V EB, EMITTER TO BASE VOLTAGE (V) C c-r bb, BASE COLLECTOR TIME CONSTANT( ps) Fig.11 Base-collector time constant vs.emitter current 200 100 50 20 10 –0.2 –0.5 –1 –2 –5 –10 I E, EMITTER CURRENT (mA) Rev.O 3/4 50 LESHAN RADIO COMPANY, LTD. L2SC2412KQLT1G Series S-L2SC2412KQLT1G Series SOT-23 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,1982 2. CONTROLLING DIMENSION: INCH. A L 3 1 V 2 A B C D G H J G C D MIN 0.1102 0.0472 0.0350 0.0150 0.0701 0.0005 INCHES MAX 0.1197 0.0551 0.0440 0.0200 0.0807 0.0040 0.0034 0.0140 0.0350 0.0830 0.0177 0.0070 0.0285 0.0401 0.1039 0.0236 DIM B S H K J K L S V MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.35 0.89 2.10 0.45 0.177 0.69 1.02 2.64 0.60 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm Rev.O 4/4