Preliminary Technical Information High Voltage Power MOSFET VDSS ID25 IXTL2N450 RDS(on) (Electrically Isolated Tab) = 4500V = 2A Ω ≤ 23Ω ISOPLUS i5-PakTM N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 4500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 4500 V VGSS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 2 A IDM TC = 25°C, Pulse Width Limited by TJM 8 A PD TC = 25°C 220 W - 55 ... +150 150 - 55 ... +150 °C °C °C 300 260 °C °C z 20..120 / 4.5..27 N/lb. z 4000 V~ 8 g TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering Plastic Body for 10s FC Mounting Force VISOL 50/60Hz, 1 Minute Weight G S Isolated Tab D G = Gate D = Drain S = Source Features z z Silicon Chip on Direct-Copper Bond (DCB) Substrate Isolated Mounting Surface 4000V~ RMS Electrical Isolation Molding Epoxies meet UL 94 V-0 Flammability Classification Advantages z z z Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. VGS(th) VDS = VGS, ID = 250μA 3.5 IGSS VGS = ±20V, VDS = 0V ±200 nA IDSS VDS = 3.6kV, VGS = 0V VDS = 4.5kV VDS = 3.6kV 25 μA 50 μA μA RDS(on) Note 2, TJ = 125°C VGS = 10V, ID = 0.5 • ID25, Note 1 © 2013 IXYS CORPORATION, All Rights Reserved 5.5 250 23 V Easy to Mount Space Savings High Power Density Applications z z z z High Voltage Power Supplies Capacitor Discharge Applications Pulse Circuits Laser and X-Ray Generation Systems Ω DS100458A(04/13) IXTL2N450 Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 1.3 VDS = 60V, ID = 0.5 • ID25, Note 1 Ciss Coss 2.2 S 6900 pF 264 pF 88 pF 3.0 Ω 44 ns VGS = 0V, VDS = 25V, f = 1MHz Crss RGi td(on) tr td(off) tf Integrated Gate Input Resistance Resistive Switching Times VGS = 10V, VDS = 1kV, ID = 1A 38 ns 100 ns RG = 0Ω (External) 205 ns 156 nC 38 nC 67 nC Qg(on) Qgs ISOPLUS i5-PakTM (IXTL) Outline VGS = 10V, VDS = 1kV, ID = 0.5 • ID25 Qgd 0.56 °C/W RthJC RthCS IS 2 0.205 4.83 5.21 0.102 0.118 2.59 3.00 A2 0.046 0.055 1.17 1.40 b 0.045 0.055 1.14 1.40 b1 0.063 0.072 1.60 1.83 b2 0.058 0.068 1.47 1.73 c 0.020 0.029 0.51 0.74 D 1.020 1.040 25.91 26.42 A E 0.770 0.799 19.56 20.29 e 0.150 BSC e1 L 0.450 BSC 0.780 0.820 L1 0.080 0.102 2.03 2.59 Q 0.210 0.235 5.33 5.97 ISM Repetitive, Pulse Width Limited by TJM 8 A VSD IF = IS, VGS = 0V, Note 1 3 V trr IF = 2A, -di/dt = 100A/μs, VR = 100V Notes: 1.75 MILLIMETER MIN MAX 0.190 Characteristic Values Min. Typ. Max. VGS = 0V INCHES MIN MAX A Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) SYM A1 °C/W 0.15 1 = Gate 2 = Source 3 = Drain 4 = Isolated μs 3.81 BSC 11.43 BSC 19.81 20.83 Q1 0.490 0.513 12.45 13.03 R 0.150 0.180 3.81 4.57 R1 0.100 0.130 2.54 3.30 S 0.668 0.690 16.97 17.53 T 0.801 0.821 20.34 20.85 U 0.065 0.080 1.65 2.03 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 2. Part must be heatsunk for high-temp Idss measurement. PRELIMANARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTL2N450 Fig. 3. Output Characteristics @ T J = 125ºC Fig. 1. Output Characteristics @ T J = 25ºC 1.8 VGS = 10V 2.4 1.6 8V ID - Amperes ID - Amperes 2 VGS = 10V 1.4 1.6 7V 1.2 7V 1.2 1 0.8 6V 0.6 0.8 0.4 0.4 0.2 6V 5V 0 0 0 10 20 30 40 50 60 70 0 80 10 20 30 40 50 60 70 VDS - Volts VDS - Volts Fig. 3. RDS(on) Normalized to ID = 1A Value vs. Junction Temperature Fig. 4. RDS(on) Normalized to ID = 1A Value vs. Drain Current 80 2.2 2.4 2.2 VGS = 10V VGS = 10V 2.0 2.0 R DS(on) - Normalized R DS(on) - Normalized I D = 2A 1.8 I D = 1A 1.6 1.4 1.2 1.0 TJ = 125ºC 1.8 1.6 1.4 1.2 TJ = 25ºC 0.8 1.0 0.6 0.8 0.4 -50 -25 0 25 50 75 100 125 0 150 0.5 1 1.5 2 2.5 ID - MilliAmperes TJ - Degrees Centigrade Fig. 5. Maximum Drain Current vs. Case Temperature Fig. 6. Input Admittance 1.4 2 1.2 1 ID - Amperes ID - Amperes 1.6 1.2 0.8 0.8 0.6 TJ = 125ºC 25ºC - 40ºC 0.4 0.4 0.2 0 0 -50 -25 0 25 50 75 TC - Degrees Centigrade © 2013 IXYS CORPORATION, All Rights Reserved 100 125 150 4.0 4.5 5.0 5.5 6.0 VGS - Volts 6.5 7.0 7.5 IXTL2N450 Fig. 7. Transconductance Fig. 8. Forward Voltage Drop of Intrinsic Diode 3 6 TJ = - 40ºC 2.5 5 25ºC 4 IS - Amperes g f s - Siemens 2 1.5 125ºC TJ = 125ºC 3 TJ = 25ºC 1 2 0.5 1 0 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 0 0.2 0.4 0.6 0.8 ID - Amperes 1 1.2 Fig. 9. Gate Charge 1.8 2 2.2 10,000 VDS = 1000V 9 Ciss I D = 1A 8 Capacitance - PicoFarads I G = 10mA 7 6 5 4 3 1,000 Coss 100 Crss 2 f = 1 MHz 1 10 0 0 20 40 60 80 100 120 140 0 160 5 10 15 20 25 30 35 40 VDS - Volts QG - NanoCoulombs Fig. 11. Resistive Switching Times vs. External Gate Resistance Fig. 12. Forward-Bias Safe Operating Area 10 250 RDS(on) Limit tf 25µs 200 100µs tr 150 t d(off) 100 t d(on) 1 I D - Amperes Switching Times - Nanoseconds 1.6 Fig. 10. Capacitance 10 VGS - Volts 1.4 VSD - Volts 1ms 10ms 0.1 TJ = 150ºC 50 100ms TC = 25ºC Single Pulse 0 0 1 2 3 4 5 6 7 8 9 10 RG(ext) - Ohms IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.01 100 DC 1,000 VDS - Volts 1s 10,000 IXTL2N450 Fig. 13. Maximum Transient Thermal Impedance Z(th)JC - ºC / W 1 0.1 0.01 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width - Seconds © 2013 IXYS CORPORATION, All Rights Reserved IXYS REF: TL2N450(H9) 4-12-12