IXYS IXTL2N450 Preliminary technical information Datasheet

Preliminary Technical Information
High Voltage
Power MOSFET
VDSS
ID25
IXTL2N450
RDS(on)
(Electrically Isolated Tab)
= 4500V
= 2A
Ω
≤ 23Ω
ISOPLUS i5-PakTM
N-Channel Enhancement Mode
Symbol
Test Conditions
Maximum Ratings
VDSS
TJ = 25°C to 150°C
4500
V
VDGR
TJ = 25°C to 150°C, RGS = 1MΩ
4500
V
VGSS
Continuous
±20
V
VGSM
Transient
±30
V
ID25
TC = 25°C
2
A
IDM
TC = 25°C, Pulse Width Limited by TJM
8
A
PD
TC = 25°C
220
W
- 55 ... +150
150
- 55 ... +150
°C
°C
°C
300
260
°C
°C
z
20..120 / 4.5..27
N/lb.
z
4000
V~
8
g
TJ
TJM
Tstg
TL
TSOLD
Maximum Lead Temperature for Soldering
Plastic Body for 10s
FC
Mounting Force
VISOL
50/60Hz, 1 Minute
Weight
G
S
Isolated Tab
D
G = Gate
D = Drain
S = Source
Features
z
z
Silicon Chip on Direct-Copper Bond
(DCB) Substrate
Isolated Mounting Surface
4000V~ RMS Electrical Isolation
Molding Epoxies meet UL 94 V-0
Flammability Classification
Advantages
z
z
z
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
Characteristic Values
Min.
Typ. Max.
VGS(th)
VDS = VGS, ID = 250μA
3.5
IGSS
VGS = ±20V, VDS = 0V
±200 nA
IDSS
VDS = 3.6kV, VGS = 0V
VDS = 4.5kV
VDS = 3.6kV
25 μA
50 μA
μA
RDS(on)
Note 2, TJ = 125°C
VGS = 10V, ID = 0.5 • ID25, Note 1
© 2013 IXYS CORPORATION, All Rights Reserved
5.5
250
23
V
Easy to Mount
Space Savings
High Power Density
Applications
z
z
z
z
High Voltage Power Supplies
Capacitor Discharge Applications
Pulse Circuits
Laser and X-Ray Generation Systems
Ω
DS100458A(04/13)
IXTL2N450
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
gfs
1.3
VDS = 60V, ID = 0.5 • ID25, Note 1
Ciss
Coss
2.2
S
6900
pF
264
pF
88
pF
3.0
Ω
44
ns
VGS = 0V, VDS = 25V, f = 1MHz
Crss
RGi
td(on)
tr
td(off)
tf
Integrated Gate Input Resistance
Resistive Switching Times
VGS = 10V, VDS = 1kV, ID = 1A
38
ns
100
ns
RG = 0Ω (External)
205
ns
156
nC
38
nC
67
nC
Qg(on)
Qgs
ISOPLUS i5-PakTM (IXTL) Outline
VGS = 10V, VDS = 1kV, ID = 0.5 • ID25
Qgd
0.56 °C/W
RthJC
RthCS
IS
2
0.205
4.83
5.21
0.102
0.118
2.59
3.00
A2
0.046
0.055
1.17
1.40
b
0.045
0.055
1.14
1.40
b1
0.063
0.072
1.60
1.83
b2
0.058
0.068
1.47
1.73
c
0.020
0.029
0.51
0.74
D
1.020
1.040
25.91
26.42
A
E
0.770
0.799
19.56
20.29
e
0.150 BSC
e1
L
0.450 BSC
0.780
0.820
L1
0.080
0.102
2.03
2.59
Q
0.210
0.235
5.33
5.97
ISM
Repetitive, Pulse Width Limited by TJM
8
A
VSD
IF = IS, VGS = 0V, Note 1
3
V
trr
IF = 2A, -di/dt = 100A/μs, VR = 100V
Notes:
1.75
MILLIMETER
MIN
MAX
0.190
Characteristic Values
Min.
Typ.
Max.
VGS = 0V
INCHES
MIN
MAX
A
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
SYM
A1
°C/W
0.15
1 = Gate
2 = Source
3 = Drain
4 = Isolated
μs
3.81 BSC
11.43 BSC
19.81
20.83
Q1
0.490
0.513
12.45
13.03
R
0.150
0.180
3.81
4.57
R1
0.100
0.130
2.54
3.30
S
0.668
0.690
16.97
17.53
T
0.801
0.821
20.34
20.85
U
0.065
0.080
1.65
2.03
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
2. Part must be heatsunk for high-temp Idss measurement.
PRELIMANARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or moreof the following U.S. patents: 4,860,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXTL2N450
Fig. 3. Output Characteristics @ T J = 125ºC
Fig. 1. Output Characteristics @ T J = 25ºC
1.8
VGS = 10V
2.4
1.6
8V
ID - Amperes
ID - Amperes
2
VGS = 10V
1.4
1.6
7V
1.2
7V
1.2
1
0.8
6V
0.6
0.8
0.4
0.4
0.2
6V
5V
0
0
0
10
20
30
40
50
60
70
0
80
10
20
30
40
50
60
70
VDS - Volts
VDS - Volts
Fig. 3. RDS(on) Normalized to ID = 1A Value
vs. Junction Temperature
Fig. 4. RDS(on) Normalized to ID = 1A Value
vs. Drain Current
80
2.2
2.4
2.2
VGS = 10V
VGS = 10V
2.0
2.0
R DS(on) - Normalized
R DS(on) - Normalized
I D = 2A
1.8
I D = 1A
1.6
1.4
1.2
1.0
TJ = 125ºC
1.8
1.6
1.4
1.2
TJ = 25ºC
0.8
1.0
0.6
0.8
0.4
-50
-25
0
25
50
75
100
125
0
150
0.5
1
1.5
2
2.5
ID - MilliAmperes
TJ - Degrees Centigrade
Fig. 5. Maximum Drain Current
vs. Case Temperature
Fig. 6. Input Admittance
1.4
2
1.2
1
ID - Amperes
ID - Amperes
1.6
1.2
0.8
0.8
0.6
TJ = 125ºC
25ºC
- 40ºC
0.4
0.4
0.2
0
0
-50
-25
0
25
50
75
TC - Degrees Centigrade
© 2013 IXYS CORPORATION, All Rights Reserved
100
125
150
4.0
4.5
5.0
5.5
6.0
VGS - Volts
6.5
7.0
7.5
IXTL2N450
Fig. 7. Transconductance
Fig. 8. Forward Voltage Drop of Intrinsic Diode
3
6
TJ = - 40ºC
2.5
5
25ºC
4
IS - Amperes
g f s - Siemens
2
1.5
125ºC
TJ = 125ºC
3
TJ = 25ºC
1
2
0.5
1
0
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
0
0.2
0.4
0.6
0.8
ID - Amperes
1
1.2
Fig. 9. Gate Charge
1.8
2
2.2
10,000
VDS = 1000V
9
Ciss
I D = 1A
8
Capacitance - PicoFarads
I G = 10mA
7
6
5
4
3
1,000
Coss
100
Crss
2
f = 1 MHz
1
10
0
0
20
40
60
80
100
120
140
0
160
5
10
15
20
25
30
35
40
VDS - Volts
QG - NanoCoulombs
Fig. 11. Resistive Switching Times vs.
External Gate Resistance
Fig. 12. Forward-Bias Safe Operating Area
10
250
RDS(on) Limit
tf
25µs
200
100µs
tr
150
t d(off)
100
t d(on)
1
I D - Amperes
Switching Times - Nanoseconds
1.6
Fig. 10. Capacitance
10
VGS - Volts
1.4
VSD - Volts
1ms
10ms
0.1
TJ = 150ºC
50
100ms
TC = 25ºC
Single Pulse
0
0
1
2
3
4
5
6
7
8
9
10
RG(ext) - Ohms
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
0.01
100
DC
1,000
VDS - Volts
1s
10,000
IXTL2N450
Fig. 13. Maximum Transient Thermal Impedance
Z(th)JC - ºC / W
1
0.1
0.01
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width - Seconds
© 2013 IXYS CORPORATION, All Rights Reserved
IXYS REF: TL2N450(H9) 4-12-12
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