IRF G150SPBK06P3H Hireltm int-a-pak 3, plastic Datasheet

PD-97398
HiRel TM INT-A-Pak 3, PLASTIC
FULL-BRIDGE IGBT MODULE
G150SPBK06P3H
Product Summary
Part Number
VCE
IC
G150SPBK06P3H
600V
150A
VCE(SAT)
2.3V Typ.
2.6V Max.
HiRelTM INT-A-Pak 3
The HiRelTM INT-A-Pak series are isolated near
hermetic power modules which combine the latest
IGBT and Soft Recovery Rectifier Technology. They
use both high-speed and low Vce(sat) IGBT for
ultra low thermal resistance.The G150SPBK06P3H
consists of six IGBTs and six FREDs in a full-bridge
configuration and has an SCR inrush current
limiter.
Features:
n Rugged, Light Weight near Hermetic Package
n
n
n
n
n
n
n
n
n
n
with Integrated Power Terminals
Gen IV IGBT Technology
Soft Recovery Rectifier Diodes
Ultra Low Thermal Resistance
Zener Gate Protection Diodes
Very Low Conduction and Switching Losses
-55°C to +125°C Operation
Screening to meet the intent of MIL-PRF-38534
Short Circuit Capability
2.0 Ohms Series Gate Resistor
High Altitude Operation, 85,000 Feet Above
Sea Level at Rated Voltage
Thermal-Mechanical Specifications
Parameter
IGBT Thermal Resistance, Junction to Case, per Switch
Symbol
c
Inverter Bridge Diode Thermal Resistance, Junction to Case, per Switch
Regen Diode Thermal Resistance, Junction to Case, per Switch
SCR Thermal Resistance, Junction to Case
c
c
Operating Junction Temperature Range
Storage Temperature Range
Screw Torque - Mounting
Screw Torque - Terminals
Module Weight
c
Min
Typ
Max
-
0.2
0.24
-
0.38
0.45
-
0.6
0.80
TJ
-55
0.21
-
0.27
150
TSTG
-55
-
125
T
-
-
26
in-lbs
-
-
410
g
RthJC
Units
°C/W
°C
cThermal Resistance measurements are at Steady State condition.
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06/03/09
G150SPBK06P3H
Absolute Ratings
Module Characteristics
Symbol
VRMS
Parameter
Voltage Isolation
Test Conditions
t = 1 min @ sea level
Terminals to Case
Ratings
Units
2,500
V
-55 to +125
°C
Ratings
Units
(All terminals shorted together)
TC
TSTG
Operating Case Temperature
Storage Temperature
IGBT Characteristics
Symbol
VCE(BR)
Parameter
Test Conditions
IGBT Collector to Emitter Breakdown Voltage VGE = 0V, TJ = +25°C to +150°C
600
VCG
Collector to Gate Voltage
600
VGE
ICC
Gate to Emitter Voltage
Collector Current Continuous
ICM
TSC
Collector Current Pulsed
Short Circuit Withstand Time
TJ
TJ = +25°C to +150°C
VGE = 15V, TC = +25°C
TP = 1.0ms, TC = +25°C
VCE = 400V, VGE = 15V, TJ = +150°C
Operating Junction Temperature
±20
150
V
A
300
10 (min)
µs
-55 to +150
°C
Ratings
Units
600
V
Diode Characteristics
Symbol
Parameter
VDRM / VRRM Max. Repetitive Peak and Off-state Voltage
IF
Forward Current
IFM
TJ
Forward Surge Current
Operating Junction Temperature
Test Conditions
TJ = +125°C
TC = +25°C
TP = 1.0ms, TC = +25°C
c
300 c
150
A
-55 to +150
°C
SCR Characteristics
Symbol
Parameter
VDRM / VRRM Max. Repetitive Peak and Off-state Voltage
IT(DC)
Max. Continuous Forward Current
ITSM
TJ
Max. Peak Surge Current
Operating Junction Temperature
Ratings
Units
TJ = +25°C
Test Conditions
600
V
TJ = +80°C
100
1/2 Cycle @ 60Hz
500
-55 to +150
A
°C
cCurrent ratings apply to the free wheeling diodes and not the regen diodes
2
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G150SPBK06P3H
Static Characteristics
Module
Symbol
RI
Parameter
Insulation Resistance
Test Conditions
Min
Typ
Max
Units
From all Pins to Case, V = 500VDC
10
-
-
MΩ
Test Conditions
Min
Typ
Max
Units
IGBT
Symbol
Parameter
ICES
Collector Current
VCE = VCES, VGE = 0V
-
-
1.0
mA
IGES
Gate Leakage Current
VGE = VGES, VCE = 0V
-
-
10
µA
VGE(th) Gate-Emitter Threshold Voltage
IC = 15mA, VCE = 10V
4.0
5.4
8.1
IC = 150A, VGE = 15V
-
2.3
-
1.8
2.6
2.1
V
IC = 75A, VGE = 15V
VCE(sat) Collector-Emitter Saturation Voltage
Diode
Symbol
VFM
Parameter
Diode Forward Voltage
Test Conditions
Min
Typ
Max
Units
Bridge Diodes, IE = 150A, VGE = 0V
-
1.8
Regen Diodes, IE = 50A, VGE = 0V
-
-
2.1
2.4
V
Test Conditions
Units
SCR
Symbol
IRRM
IDRM
VTM
IH
Parameter
Min
Typ
Max
Max. Peak Reverse Leakage Current
VRRM = 600V
-
-
15
Max. Peak Off-state Leakage Current
VDRM = 600V
-
-
15
Forward On-state Voltage
IF = 100A
-
-
1.35
IF = 50A
-
-
DC Method, Bias Condition C
-
200
1.15
300
mA
Holding Current
mA
V
Dynamic Characteristics
IGBT
Symbol
QG
Parameter
Test Conditions
Min
Typ
Max
Units
-
-
1600
Total Gate Charge
VCC = 300V, IC = 150A, VGE = 15V
td(on)
Turn On Delay Time
VCC = 300V, IC = 150A
-
-
1200
nC
ns
tr
Rise Time
Turn Off Delay Time
VGE1 = VGE2 = 15V
-
-
850
ns
RG = 20Ω, Turn-on
-
-
Fall Time
RG = 10Ω, Turn-off
-
-
2.1
300
ns
td(off)
tf
µs
Diode
Symbol
trr
Qrr
Parameter
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
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Min
Typ
Max
Units
IE = 150A, di/dt = 300A/µs Min
Test Conditions
-
-
Bridge Diodes only
-
-
170
9.0
µC
ns
3
G150SPBK06P3H
Circuit Diagram - HiRelTM INT-A-Pak 3
A
B
C
D C(+)
Q8
SCR
SC R A
D6
SC R A
SC R G
SC R C
G1 A
R3
Q1
D1
2
VR5
G1B
VR6
R2
Q7
D7
2
VR 3
G1C
VR 4
D5
VR2
E1B
E1 A
Q5
R1
2
V R1
E1C
RE G
GR
VR7
2
R4
Q6
G2 A
VR8
ER
R5
Q2
2
VR9
D2
Q3
G2B
2
VR 11
D3
G2C
VR 12
VR1 0
E2 A
R6
E2B
Q4
R7
D4
2
V R13
VR14
E2C
DC(-)
Case Outline- HiRelTM INT-A-Pak 3
Notes: 1) All dimensions are in inches
2) Unless otherwise specified,
Tolerances .XX = ±0.01, .XXX = ±0.005
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G150SPBK06P3H
Part numbering Nomenclature
G 150 SP B
IGBT Module
Current Capability
150 = 150 Amps
Circuit Configuration
SP = Seven Plus
K
06 P3 H
Screening Level
H = Military Grade
Screened per MIL-PRF-38534
Package Type
P3 = HiRelTM INT-A-Pak 3
2.84" X 5.0" X 1.0"
Voltage
06 = 600V
Generation
IGBT / FWD Configuration
B = GEN 4 / GEN 3
IGBT Speed / SC Capability
K = Fast, SC Capable
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 252-7105
IR LEOMINSTER: 205 Crawford St., Leominster, Massachusetts 01453, Tel: (978) 534-5776
Data and specifications subject to change without notice.
06/2009
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