IXTQ 26N50P IXTT 26N50P IXTV 26N50P IXTV 26N50PS PolarHVTM Power MOSFET VDSS ID25 = = ≤ RDS(on) 500 26 230 V A Ω mΩ N-Channel Enhancement Mode Avalanche Rated TO-3P (IXTQ) Symbol Test Conditions VDSS TJ = 25° C to 150° C 500 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ 500 V VGSS Continuos ±30 V VGSM Transient ±40 V ID25 TC = 25° C 26 A IDM TC = 25° C, pulse width limited by TJM 78 A IAR TC = 25° C 26 A EAR TC = 25° C 40 mJ EAS TC = 25° C 1.0 J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤150° C, RG = 4 Ω 10 V/ns PD Maximum Ratings TJ TJM Tstg 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Md Mounting torque Weight TO-3P TO-268 PLUS220 & PLUS220SMD (TO-3P) 400 W -55 ... +150 150 -55 ... +150 °C °C °C 300 260 °C °C BVDSS VGS = 0 V, ID = 250 µA 500 VGS(th) VDS = VGS, ID = 250µA 3.0 IGSS VGS = ±30 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤300 µs, duty cycle d ≤ 2 % TJ = 125° C S D (TAB) PLUS220 (IXTV) D D (TAB) S PLUS220SMD (IXTV_S) G S G = Gate S = Source D (TAB) D = Drain TAB = Drain Features l V l 5.5 V l ±100 nA 25 250 µA µA 230 mΩ International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages l l l © 2006 IXYS All rights reserved D (TAB) G g g g Characteristic Values Min. Typ. Max. S TO-268 (IXTT) 1.13/10 Nm/lb.in. 6 5.5 5 Symbol Test Conditions (TJ = 25° C, unless otherwise specified) D G TC = 25° C TL TSOLD G Easy to mount Space savings High power density DS99206E(12/05) IXTQ 26N50P IXTT 26N50P IXTV 26N50P IXTV26N50PS Symbol Test Conditions Characteristic Values (TJ = 25° C, unless otherwise specified) Min. Typ. Max. gfs VDS = 20 V; ID = 0.5 ID25, pulse test 31 S 3600 pF 380 pF Crss 48 pF td(on) 20 ns Ciss Coss 24 VGS = 0 V, VDS = 25 V, f = 1 MHz tr VGS = 10 V, VDS = 0.5 ID25 25 ns td(off) RG = 4 Ω (External) 58 ns tf 20 ns Qg(on) 65 nC 18 nC 20 nC Qgs VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgd TO-3P (IXTQ) Outline 0.31 ° C/W RthJC ° C/W 0.21 RthCS Source-Drain Diode Characteristic Values (TJ = 25° C, unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0 V 26 A ISM Repetitive 104 A VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 1.5 V trr IF = 25A, -di/dt = 100 A/µs 300 ns QRM VR = 100V, VGS = 0 V 3.3 µC PLUS220 (IXTV) Outline PLUS220SMD (IXTV_S) Outline IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6,771,478 B2 IXTQ 26N50P IXTT 26N50P IXTV 26N50P IXTV26N50PS Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 26 60 V GS = 10V 8V 7V 24 22 50 20 45 I D - Amperes 18 I D - Amperes V GS = 10V 8V 55 16 14 12 6V 10 35 30 25 8 20 6 15 4 10 2 7V 40 6V 5 5V 0 5V 0 0 1 2 3 4 5 6 7 0 3 6 9 26 18 21 24 27 30 3.1 V GS = 10V 7V 24 22 V GS = 10V 2.8 2.5 18 R DS(on) - Normalized 20 I D - Amperes 15 Fig. 4. R DS(on) Normalized to ID = 13A Value v s. Junction Temperature Fig. 3. Output Characteristics @ 125ºC 6V 16 14 12 10 8 6 5V 2.2 I D = 26A 1.9 1.6 I D = 13A 1.3 1 4 0.7 2 0 0.4 0 2 4 6 8 10 12 14 16 -50 -25 V DS - Volts 0 25 50 75 100 125 150 T J - Degrees Centigrade Fig. 5. R DS(on) Normalized to ID = 13A Value v s. Drain Current Fig. 6. Maximum Drain Current v s. Case Temperature 30 3.2 3 V GS = 10V TJ = 125ºC 2.8 25 2.6 2.4 I D - Amperes R DS(on) - Normalized 12 V DS - Volts V DS - Volts 2.2 2 1.8 1.6 20 15 10 1.4 TJ = 25ºC 1.2 5 1 0.8 0 0 5 10 15 20 25 30 35 I D - Amperes © 2006 IXYS All rights reserved 40 45 50 55 60 -50 -25 0 25 50 75 T J - Degrees Centigrade 100 125 150 IXTQ 26N50P IXTT 26N50P IXTV 26N50P IXTV26N50PS Fig. 8. Transconductance 50 45 45 40 40 35 35 30 g f s - Siemens I D - Amperes Fig. 7. Input Admittance 50 TJ = 125ºC 25ºC - 40ºC 25 20 TJ = - 40ºC 25ºC 125ºC 30 25 20 15 15 10 10 5 5 0 0 3.5 4 4.5 5 5.5 6 6.5 7 0 5 10 15 20 V GS - Volts 25 30 35 40 45 50 55 60 60 65 I D - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 80 10 V DS = 250V 9 70 I D = 13A 8 I G = 10mA 60 I S - Amperes 7 V GS - Volts 50 40 30 TJ = 125ºC 6 5 4 3 20 2 10 TJ = 25ºC 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 0 5 10 V SD - Volts 15 20 25 30 35 40 45 50 55 Q G - NanoCoulombs Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance 100 10,000 f = 1 MHz Capacitance - PicoFarads RDS(on) Limit C iss 25µs I D - Amperes 1,000 C oss 100µs 10 1ms 100 10ms DC TJ = 150ºC C rss TC = 25ºC 10 1 0 5 10 15 20 25 30 35 40 V DS - Volts IXYS reserves the right to change limits, test conditions, and dimensions. 10 100 V DS - Volts 1000 IXTQ 26N50P IXTT 26N50P IXTV 26N50P IXTV26N50PS Fig. 13. Maximum Transient Thermal Resistance R (th)JC - ºC / W 1.000 0.100 0.010 0.0001 0.001 0.01 Pulse W idth - Seconds TO-268 (IXTT) Outline © 2006 IXYS All rights reserved 0.1 1 10