Diodes MMDT2222A Dual npn small signal surface mount transistor Datasheet

MMDT2222A
DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
·
·
·
Epitaxial Planar Die Construction
Complementary PNP Type Available
(MMDT2907A)
Ultra-Small Surface Mount Package
SOT-363
A
C2
·
·
·
·
·
·
E1
B C
Mechanical Data
·
·
B1
E2
Case: SOT-363, Molded Plastic
Case Material - UL Flammability Rating
Classification 94V-0
Moisture sensitivity: Level 1 per J-STD-020A
Terminals: Solderable per MIL-STD-202,
Method 208
Terminal Connections: See Diagram
Marking (See Page 2): K1P
Ordering & Date Code Information: See Page 2
Weight: 0.006 grams (approx.)
Maximum Ratings
B2
C1
G
H
K
M
J
D
C2
E2
B1
B2
F
L
E1
C1
Dim
Min
Max
A
0.10
0.30
B
1.15
1.35
C
2.00
2.20
D
0.65 Nominal
F
0.30
0.40
H
1.80
2.20
J
¾
0.10
K
0.90
1.00
L
0.25
0.40
M
0.10
0.25
a
0°
8°
All Dimensions in mm
@ TA = 25°C unless otherwise specified
Symbol
MMDT2222A
Unit
Collector-Base Voltage
Characteristic
VCBO
75
V
Collector-Emitter Voltage
VCEO
40
V
Emitter-Base Voltage
VEBO
6.0
V
Collector Current - Continuous (Note 1)
IC
600
mA
Power Dissipation (Note 1, 2)
Pd
200
mW
RqJA
625
°C/W
Tj, TSTG
-55 to +150
°C
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage and Temperature Range
Note:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Maximum combined dissipation.
DS30125 Rev. 5 - 2
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MMDT2222A
Electrical Characteristics
@ TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
Collector-Base Breakdown Voltage
V(BR)CBO
75
¾
V
IC = 10mA, IE = 0
Collector-Emitter Breakdown Voltage
V(BR)CEO
40
¾
V
IC = 10mA, IB = 0
Emitter-Base Breakdown Voltage
V(BR)EBO
6.0
¾
V
IE = 10mA, IC = 0
VCB = 60V, IE = 0
VCB = 60V, IE = 0, TA = 150°C
OFF CHARACTERISTICS (Note 3)
Collector Cutoff Current
ICBO
¾
10
nA
mA
Collector Cutoff Current
ICEX
¾
10
nA
VCE = 60V, VEB(OFF) = 3.0V
Emitter Cutoff Current
IEBO
¾
10
nA
VEB = 3.0V, IC = 0
IBL
¾
20
nA
VCE = 60V, VEB(OFF) = 3.0V
hFE
35
50
75
100
40
50
35
¾
¾
¾
300
¾
¾
¾
¾
IC = 100mA, VCE = 10V
IC = 1.0mA, VCE = 10V
IC = 10mA, VCE = 10V
IC = 150mA, VCE = 10V
IC = 500mA, VCE = 10V
IC = 10mA, VCE = 10V, TA = -55°C
IC = 150mA, VCE = 1.0V
Collector-Emitter Saturation Voltage
VCE(SAT)
¾
0.3
1.0
V
IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
Base- Emitter Saturation Voltage
VBE(SAT)
0.6
¾
1.2
2.0
V
IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
Output Capacitance
Cobo
¾
8
pF
VCB = 10V, f = 1.0MHz, IE = 0
Input Capacitance
Cibo
—
25
pF
VEB = 0.5V, f = 1.0MHz, IC = 0
Current Gain-Bandwidth Product
fT
300
¾
MHz
VCE = 20V, IC = 20mA,
f = 100MHz
Noise Figure
NF
¾
4.0
dB
VCE = 10V, IC = 100mA,
RS = 1.0kW, f = 1.0kHz
Delay Time
td
¾
10
ns
Rise Time
tr
¾
25
ns
Storage Time
ts
¾
225
ns
Fall Time
tf
¾
60
ns
Base Cutoff Current
ON CHARACTERISTICS (Note 3)
DC Current Gain
SMALL SIGNAL CHARACTERISTICS
SWITCHING CHARACTERISTICS
VCC = 30V, IC = 150mA,
VBE(off) = - 0.5V, IB1 = 15mA
VCC = 30V, IC = 150mA,
IB1 = IB2 = 15mA
Ordering Information (Note 4)
Notes:
Device
Packaging
Shipping
MMDT2222A-7
SOT-363
3000/Tape & Reel
3. Short duration test pulse used to minimize self-heating effect.
4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
K1P YM
K1P = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
K1P YM
Date Code Key
Year
1998
1999
2000
2001
2002
2003
2004
2005
2006
2007
2008
2009
Code
J
K
L
M
N
P
R
S
T
U
V
W
Month
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
DS30125 Rev. 5 - 2
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MMDT2222A
2.0
CAPACITANCE (pF)
20
VCE COLLECTOR-EMITTER VOLTAGE (V)
30
Cibo
10
5.0
Cobo
1.0
0.1
1.0
10
50
1.8
IC = 10mA
1.6
IC = 100mA
1.4
IC = 300mA
1.2
1.0
0.8
0.6
0.4
0.2
0
0.001
REVERSE VOLTS (V)
Fig. 1 Typical Capacitance
DS30125 Rev. 5 - 2
IC = 30mA
IC = 1mA
0.01
0.1
1
10
100
IB BASE CURRENT (mA)
Fig. 2 Typical Collector Saturation Region
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MMDT2222A
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