MMDT2222A DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features · · · Epitaxial Planar Die Construction Complementary PNP Type Available (MMDT2907A) Ultra-Small Surface Mount Package SOT-363 A C2 · · · · · · E1 B C Mechanical Data · · B1 E2 Case: SOT-363, Molded Plastic Case Material - UL Flammability Rating Classification 94V-0 Moisture sensitivity: Level 1 per J-STD-020A Terminals: Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking (See Page 2): K1P Ordering & Date Code Information: See Page 2 Weight: 0.006 grams (approx.) Maximum Ratings B2 C1 G H K M J D C2 E2 B1 B2 F L E1 C1 Dim Min Max A 0.10 0.30 B 1.15 1.35 C 2.00 2.20 D 0.65 Nominal F 0.30 0.40 H 1.80 2.20 J ¾ 0.10 K 0.90 1.00 L 0.25 0.40 M 0.10 0.25 a 0° 8° All Dimensions in mm @ TA = 25°C unless otherwise specified Symbol MMDT2222A Unit Collector-Base Voltage Characteristic VCBO 75 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 6.0 V Collector Current - Continuous (Note 1) IC 600 mA Power Dissipation (Note 1, 2) Pd 200 mW RqJA 625 °C/W Tj, TSTG -55 to +150 °C Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage and Temperature Range Note: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. Maximum combined dissipation. DS30125 Rev. 5 - 2 1 of 3 www.diodes.com MMDT2222A Electrical Characteristics @ TA = 25°C unless otherwise specified Characteristic Symbol Min Max Unit Test Condition Collector-Base Breakdown Voltage V(BR)CBO 75 ¾ V IC = 10mA, IE = 0 Collector-Emitter Breakdown Voltage V(BR)CEO 40 ¾ V IC = 10mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO 6.0 ¾ V IE = 10mA, IC = 0 VCB = 60V, IE = 0 VCB = 60V, IE = 0, TA = 150°C OFF CHARACTERISTICS (Note 3) Collector Cutoff Current ICBO ¾ 10 nA mA Collector Cutoff Current ICEX ¾ 10 nA VCE = 60V, VEB(OFF) = 3.0V Emitter Cutoff Current IEBO ¾ 10 nA VEB = 3.0V, IC = 0 IBL ¾ 20 nA VCE = 60V, VEB(OFF) = 3.0V hFE 35 50 75 100 40 50 35 ¾ ¾ ¾ 300 ¾ ¾ ¾ ¾ IC = 100mA, VCE = 10V IC = 1.0mA, VCE = 10V IC = 10mA, VCE = 10V IC = 150mA, VCE = 10V IC = 500mA, VCE = 10V IC = 10mA, VCE = 10V, TA = -55°C IC = 150mA, VCE = 1.0V Collector-Emitter Saturation Voltage VCE(SAT) ¾ 0.3 1.0 V IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA Base- Emitter Saturation Voltage VBE(SAT) 0.6 ¾ 1.2 2.0 V IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA Output Capacitance Cobo ¾ 8 pF VCB = 10V, f = 1.0MHz, IE = 0 Input Capacitance Cibo — 25 pF VEB = 0.5V, f = 1.0MHz, IC = 0 Current Gain-Bandwidth Product fT 300 ¾ MHz VCE = 20V, IC = 20mA, f = 100MHz Noise Figure NF ¾ 4.0 dB VCE = 10V, IC = 100mA, RS = 1.0kW, f = 1.0kHz Delay Time td ¾ 10 ns Rise Time tr ¾ 25 ns Storage Time ts ¾ 225 ns Fall Time tf ¾ 60 ns Base Cutoff Current ON CHARACTERISTICS (Note 3) DC Current Gain SMALL SIGNAL CHARACTERISTICS SWITCHING CHARACTERISTICS VCC = 30V, IC = 150mA, VBE(off) = - 0.5V, IB1 = 15mA VCC = 30V, IC = 150mA, IB1 = IB2 = 15mA Ordering Information (Note 4) Notes: Device Packaging Shipping MMDT2222A-7 SOT-363 3000/Tape & Reel 3. Short duration test pulse used to minimize self-heating effect. 4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information K1P YM K1P = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September K1P YM Date Code Key Year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 Code J K L M N P R S T U V W Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D DS30125 Rev. 5 - 2 2 of 3 www.diodes.com MMDT2222A 2.0 CAPACITANCE (pF) 20 VCE COLLECTOR-EMITTER VOLTAGE (V) 30 Cibo 10 5.0 Cobo 1.0 0.1 1.0 10 50 1.8 IC = 10mA 1.6 IC = 100mA 1.4 IC = 300mA 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 REVERSE VOLTS (V) Fig. 1 Typical Capacitance DS30125 Rev. 5 - 2 IC = 30mA IC = 1mA 0.01 0.1 1 10 100 IB BASE CURRENT (mA) Fig. 2 Typical Collector Saturation Region 3 of 3 www.diodes.com MMDT2222A