Comchip CFRA104-G Smd efficient fast recovery rectifier Datasheet

SMD Efficient Fast Recovery Rectifier
CFRA101-G Thru CFRA107-G (RoHS Device)
Reverse Voltage: 50 ~ 1000 Volts
Forward Current: 1.0 Amp
Features:
Ideal for surface mount applications
Easy pick and place
DO-214AC (SMA)
Plastic package has Underwriters Lab.
flammability classification 94V-0.
0.067(1.70)
0.051(1.29)
Fast recovery time: 150 ~ 500nS
0.110(2.79)
0.086(2.18)
Low leakage current
0.180(4.57)
0.160(4.06)
Mechanical Data:
Case: SMA/DO-214AC molded plastic
Terminals: solderable per MIL-STD-750,
method 2026
Polarity: Color band denotes cathode end
Mounting position: Any
Approx. Weight: 0.04 gram
0.012(0.31)
0.006(0.15)
0.091(2.31)
0.067(1.70)
0.059(1.50)
0.035(0.89)
0.008(0.20)
0.004(0.10)
0.209(5.31)
0.185(4.70)
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characterics:
Symbol
CFRA
101-G
CFRA
102-G
CFRA
103-G
CFRA
104-G
CFRA
105-G
CFRA
106-G
CFRA
107-G
Unit
VRRM
50
100
200
400
600
800
1000
V
Max. DC Blocking Voltage
VDC
50
100
200
400
600
800
1000
V
Max. RMS Voltage
VRMS
35
70
140
280
420
560
700
V
Peak Surge Forward Current
8.3ms single half sine-wave
superimposed on rate load
(JEDEC method)
IFSM
30
A
Max. Average Forward Current
Io
1.0
A
Max. Instantaneous Forward Voltage
at 1.0A
VF
1.3
V
Reverse recovery time
Trr
Max. DC Reverse Current at Rated DC
Blocking Voltage
Ta=25oC
Ta=100oC
IR
Parameter
Max. Repetitive Peak Reverse Voltage
Max. Thermal Resistance (Note1)
Max. Operating Junction Temperature
Storage Temperature
R
250
100
5.0
50
42
JL
500
nS
uA
o C/W
Tj
-55 to +155
o
C
TSTG
-55 to +150
o
C
Note1: Thermal resistance from junction to ambient.
ā€œ-Gā€ suffix designates RoHS compliant Version
www.comchiptech.com
Page1
SMD Efficient Fast Recovery Rectifier
Rating and Characteristic Curves (CFRA101-G Thru CFRA107-G)
Fig. 1 - Reverse Characteristics
Fig.2 - Forward Characteristics
100
Tj=125 C
Forward current ( A )
Reverse Current ( uA )
1000
100
10
Tj=25 C
1.0
10
1
0.1
Tj=25 C
Pulse width 300uS
4% duty cycle
0.1
0
0.01
20
40
60
80
100 120
140
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
Percent of Rated Peak Reverse Voltage (%)
Forward Voltage(V)
Fig. 3 - Junction Capacitance
Fig. 4 - Non Repetitive Forward Surge Current
35
50
Junction Capacitance (pF)
30
8.3mS Single Half Sine
Wave JEDEC methode
Peak Surge Forward Current (A)
=1MHz and applied
4VDC reverse voltage
25
20
15
10
5
40
30
Tj=25 C
20
10
0
0
0.01
0.1
1.0
10
100
1
Reverse Voltage (V)
5
10
50
1 00
Number of Cycles at 60Hz
Fig. 6 - Current Derating Curve
Fig. 5 - Test Circuit Diagram and Reverse Recovery Time Characteristics
1.4
trr
10
NONINDUCTIVE
|
|
|
|
|
|
|
|
+0.5A
( )
(+)
25Vdc
(approx.)
D.U.T.
PULSE
GENERATOR
(NOTE 2)
( )
1
NONINDUCTIVE
Average Forward Current ( A )
50
NONINDUCTIVE
0
-0.25A
(+)
OSCILLISCOPE
(NOTE 1)
NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF.
2. Rise Time= 10ns max., Source Impedance= 50 ohms.
-1.0A
1.2
1.0
0.8
0.6
0.4
Single Phase
Half Wave 60Hz
0.2
00
25
50
75
100
125
150
175
1cm
SET TIME BASE FOR
Ambient Temperature ( C)
50 / 10ns / cm
ā€œ-Gā€ suffix designates RoHS compliant Version
www.comchiptech.com
Page2
Similar pages