Fairchild MBR3060PT Schottky rectifier Datasheet

MBR3035PT - MBR3060PT
MBR3035PT - MBR3060PT
Features
•
•
•
•
•
•
Low power loss, high efficiency.
High surge capacity.
For use in low voltage, high frequency
inverters, free wheeling, and polarity
protection applications.
Metal silicon junction, majority carrier
conduction.
High current capacity, low forward
voltage drop.
Guard ring for over voltage protection.
PIN 1
+
CASE
PIN 2
PIN 3
1
2
3
TO-3P/TO-247AD
Schottky Rectifiers
Absolute Maximum Ratings*
Symbol
TA = 25°C unless otherwise noted
Value
Parameter
Units
3035PT
3045PT
3050PT
3060PT
35
45
50
60
VRRM
Maximum Repetitive Reverse Voltage
IF(AV)
Average Rectified Forward Current
IFSM
Non-repetitive Peak Forward Surge Current
8.3 ms Single Half-Sine-Wave
Storage Temperature Range
200
A
-65 to +175
°C
Operating Junction Temperature
-65 to +150
°C
Value
Units
Tstg
TJ
30
V
A
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
Symbol
Parameter
PD
Power Dissipation
3.0
W
RθJL
Thermal Resistance, Junction to Lead
1.4
°C/W
Electrical Characteristics
Symbol
TA = 25°C unless otherwise noted
Device
Parameter
3035PT
VF
IR
IRRM
Forward Voltage IF = 20 A, TC = 25°C
IF = 20 A, TC = 125°C
IF = 30 A, TC = 25°C
IF = 30 A, TC = 125°C
Reverse Current @ rated VR TA = 25°C
TA = 125°C
Peak Repetitive Reverse Surge Current
2.0 us Pulsu Width, f = 1.0 KHz
2001 Fairchild Semiconductor Corporation
3045PT
Units
3050PT
3060PT
0.60
0.76
0.72
0.75
0.65
-
V
V
V
V
1.0
60
5.0
100
mA
mA
1.0
0.5
A
MBR3035PT - MBR3060PT, Rev. C
(continued)
30
MBR3035PT-MBR3045PT
24
MBR3050PT-MBR3060PT
18
SINGLE PHASE
HALF WAVE
60HZ
RESISTIVE OR
INDUCTIVE LOAD
.375" (9.00mm) LOAD
LENGTHS
12
6
0
0
25
50
75
100
125
Ambient Temperature [ºC]
150
175
Peak Forward Surge Current, IFSM [A]
Average Rectified Forward Current, IF [A]
Typical Characteristics
Figure 1. Forward Current Derating Curve
150
100
50
0
1
2
5
10
20
Number of Cycles at 60Hz
50
100
MBR3035PT-MBR3045PT
10
10
Reverse Current, IR [mA]
Forward Current, IF [A]
200
50
TA = 25º C
T A = 150 º C
MBR3050PT-MBR3060PT
1
MBR3035PT-MBR3045PT
0.1
µS
Pulse Width = 300µ
2% Duty Cycle
0
0.2
0.4
0.6
0.8
Forward Voltage, VF [V]
1
2000
MBR3035PT-MBR3045PT
1000
MBR3050PT-MBR3060PT
500
200
100
0.1
1
10
Reverse Voltage, VR [V]
Figure 5. Total Capacitance
2001 Fairchild Semiconductor Corporation
100
TA = 75º C
0.1
MBR3035PT-MBR3045PT
0.01
TA = 25º C
MBR3050PT-MBR3060PT
0
20
40
60
80
100 120 140
Percent of Rated Peak Reverse Voltage [%]
Figure 4. Reverse Current vs Reverse Voltage
Transient Thermal Impedance [ºC/W]
5000
T A = 125 º C
MBR3050PT-MBR3060PT
1
0.001
1.2
Figure 3. Forward Voltage Characteristics
Total Capacitance, CT [pF]
250
Figure 2. Non-Repetitive Surge Current
50
0.01
300
100
10
1
0.1
0.01
0.1
1
10
Pulse Duration [s]
100
Figure 6. Thermal Impedance Characteristics
MBR3035PT - MBR3060PT, Rev. C
MBR3035PT - MBR3060PT
Schottky Rectifier
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with instructions for use provided in the labeling, can be
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H4
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