AUIRF9Z34N
TO-220AB
AUIRF9Z34N
Features
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Advanced Planar Technology
P-Channel MOSFET
Dynamic dV/dT Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified*
V(BR)DSS
-55V
RDS(on) max.
0.10Ω
ID
-19A
D
G
S
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (T A) is 25°C, unless otherwise specified.
Max.
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
-19
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
-14
IDM
-68
Pulsed Drain Current
c
PD @TC = 25°C Power Dissipation
Linear Derating Factor
VGS
Gate-to-Source Voltage
d
Units
A
68
0.45
± 20
W
W/°C
V
EAS
Single Pulse Avalanche Energy (Thermally Limited)
180
mJ
IAR
Avalanche Current
-10
A
6.8
-5.0
-55 to + 175
mJ
V/ns
EAR
dv/dt
TJ
TSTG
c
Repetitive Avalanche Energy c
Peak Diode Recovery dv/dt e
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case )
Mounting Torque, 6-32 or M3 screw
°C
300
10 lbf in (1.1N m)
y
Thermal Resistance
Typ.
Max.
–––
2.2
Case-to-Sink, Flat, Greased Surface
0.50
–––
Junction-to-Ambient
–––
62
RθJC
Junction-to-Case
RθCS
RθJA
2014-8-11
g
Parameter
y
1
Units
°C/W
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AUIRF9Z34N
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS
ΔV(BR)DSS/ΔTJ
RDS(on)
VGS(th)
gfs
IDSS
IGSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min. Typ. Max. Units
-55
–––
–––
-2.0
4.2
–––
–––
–––
–––
–––
0.05
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.10
-4.0
–––
-25
-250
100
-100
V
V/°C
Ω
V
S
μA
nA
Conditions
VGS = 0V, ID = -250μA
Reference to 25°C, ID = -1mA
VGS = -10V, ID = -10A
VDS = VGS, ID = -250μA
VDS = -25V, ID = -10A
VDS = -55V, VGS = 0V
VDS = -44V, VGS = 0V, TJ = 150°C
VGS = 20V
VGS = -20V
f
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
13
55
30
41
4.5
35
79
16
–––
–––
–––
–––
–––
LS
Internal Source Inductance
–––
7.5
–––
6mm (0.25in.)
from package
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
620
280
140
–––
–––
–––
and center of die contact
VGS = 0V
VDS = -25V
ƒ = 1.0MHz, See Fig. 5
nC
ns
nH
pF
ID = -10A
VDS = -44V
VGS = -10V, See Fig. 6 & 13
VDD = -28V
ID = -10A
RG = 13Ω
RD = 2.6Ω, See Fig. 10
Between lead,
f
f
D
G
S
Diode Characteristics
Parameter
IS
Continuous Source Current
ISM
(Body Diode)
Pulsed Source Current
VSD
trr
Qrr
ton
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
2014-8-11
c
Min. Typ. Max. Units
–––
–––
-19
A
–––
–––
–––
–––
–––
–––
54
110
Conditions
MOSFET symbol
D
-68
showing the
integral reverse
-1.6
82
160
S
p-n junction diode.
TJ = 25°C, IS = -10A, VGS = 0V
TJ = 25°C, IF = -10A
di/dt = 100A/μs
V
ns
nC
G
f
f
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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AUIRF9Z34N
Qualification Information†
Automotive
(per AEC-Q101)
Qualification Level
Moisture Sensitivity Level
Machine Model
ESD
Comments: This part number(s) passed Automotive qualification.
IR’s Industrial and Consumer qualification level is granted by
extension of the higher Automotive level.
TO-220
N/A
Class M3 (+/- 250V)†††
AEC-Q101-002
Human Body Model
Class H1B (+/- 800V)†††
AEC-Q101-001
Charged Device
Model
Class C5 (+/- 2000V)†††
AEC-Q101-005
Yes
RoHS Compliant
2014-8-11
††
3
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AUIRF9Z34N
100
100
VGS
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
-ID , Drain-to-Source Current (A)
-ID , Drain-to-Source Current (A)
10
-4.5V
20μs PULSE WIDTH
Tc = 25°C
A
1
0.1
1
10
10
-4.5V
2.0
R DS(on) , Drain-to-Source On Resistance
(Normalized)
-ID , Drain-to-Source Current (A)
TJ = 25°C
TJ = 175°C
10
VDS = -25V
20μs PULSE WIDTH
6
7
8
9
10
A
100
I D = -17A
1.5
1.0
0.5
VGS = -10V
0.0
A
-60 -40 -20
-VGS , Gate-to-Source Voltage (V)
0
20
40
60
A
80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 3. Typical Transfer Characteristics
2014-8-11
10
Fig 2. Typical Output Characteristics
100
5
1
-VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1
20μs PULSE WIDTH
TC = 175°C
1
0.1
100
-VDS , Drain-to-Source Voltage (V)
4
VGS
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
TOP
TOP
Fig 4. Normalized On-Resistance
Vs. Temperature
4
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AUIRF9Z34N
1200
800
Ciss
600
Coss
-VGS , Gate-to-Source Voltage (V)
1000
C, Capacitance (pF)
20
V GS = 0V,
f = 1MHz
C iss = Cgs + C gd , Cds SHORTED
C rss = C gd
C oss = C ds + C gd
400
Crss
200
0
1
10
100
A
I D = -10A
VDS = -44V
VDS = -28V
16
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
-VDS , Drain-to-Source Voltage (V)
20
30
40
A
Q G , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
1000
OPERATION IN THIS AREA LIMITED
BY R DS(on)
-I D , Drain Current (A)
-ISD , Reverse Drain Current (A)
10
10
TJ = 175°C
TJ = 25°C
1
100
10μs
100μs
10
1ms
VGS = 0V
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
A
1
1.6
1
10ms
A
10
100
-VDS , Drain-to-Source Voltage (V)
-VSD , Source-to-Drain Voltage (V)
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
2014-8-11
TC = 25°C
TJ = 175°C
Single Pulse
5
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AUIRF9Z34N
RD
V DS
20
VGS
D.U.T.
RG
-
+
ID , Drain Current (A)
15
VDD
-10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
10
Fig 10a. Switching Time Test Circuit
5
0
td(on)
25
50
75
100
125
150
tr
t d(off)
tf
VGS
175
10%
TC , Case Temperature ( °C)
90%
VDS
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
10
1
D = 0.50
0.20
0.10
0.05
0.1
0.01
0.00001
0.02
0.01
PDM
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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6
2014-8-11
AUIRF9Z34N
D.U.T
RG
IAS
-20V
tp
E AS , Single Pulse Avalanche Energy (mJ)
L
VDS
VDD
A
DRIVER
0.01Ω
15V
Fig 12a. Unclamped Inductive Test Circuit
500
TOP
BOTTOM
400
ID
-4.2A
-7.2A
-10A
300
200
100
A
0
25
50
75
100
125
150
175
Starting TJ , Junction Temperature (°C)
I AS
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
tp
V(BR)DSS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
-10V
50KΩ
QG
QGS
12V
.3μF
QGD
D.U.T.
+VDS
VGS
VG
-3mA
IG
Charge
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
2014-8-11
.2μF
7
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AUIRF9Z34N
Peak Diode Recovery dv/dt Test Circuit
D.U.T*
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
-
-
+
RG
VGS
*
+
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
- V
DD
Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
[
VGS=10V
] ***
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
[
]
Forward Drop
Inductor Curent
Ripple ≤ 5%
[
ISD
]
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig 14. For P-Channel HEXFETS
2014-8-11
8
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AUIRF9Z34N
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
TO-220AB Part Marking Information
Part Number
AUIRF9Z34N
YWWA
IR Logo
XX
or
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
XX
Lot Code
2014-8-11
9
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AUIRF9Z34N
Ordering Information
Base part
number
Package Type
Standard Pack
AUIRF9Z34N
TO-220
Form
Tube
2014-8-11
10
Complete Part Number
Quantity
50
AUIRF9Z34N
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