MP4410 Silicon N Channel MOS Type (Four L2-π-MOSV in One) TOSHIBA Power MOS FET Module MP4410 Industrial Applications High Power, High Speed Switching Applications Hammer Drive, Pulse Motor Drive and Inductive Load Switching • 4-V gate drivability • Small package by full molding (SIP 12 pin) • High drain power dissipation (4-device operation) Unit: mm : PT = 28 W (Tc = 25°C) • Low drain-source ON resistance: RDS (ON) = 0.12 Ω (typ.) • Low leakage current: IGSS = ±10 μA (max) (VGS = ±16 V) • Enhancement-mode: Vth = 0.8 to 2.0 V (ID = 1 mA) IDSS = 100 μA (max) (VDS = 60 V) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 60 V JEDEC ― Gate-source voltage VGSS ±20 V JEITA ― Drain current ID 5 A TOSHIBA Peak drain current IDP 20 A Weight: 3.9 g (typ.) PD 2.2 W Drain power dissipation (1-device operation) Drain power dissipation Ta = 25°C (4-device operation) Tc = 25°C PT 4.4 Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C 28 2-32C1D W Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Array Configuration 2 1 6 3 5 4 9 8 10 11 12 7 1 2006-10-27 MP4410 Marking MP4410 JAPAN Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Thermal Characteristics Characteristics Thermal resistance of channel to ambient Symbol Max Unit ΣRth (ch-a) 28.4 °C/W ΣRth (ch-c) 4.46 °C/W TL 260 °C (4-device operation, Ta = 25°C) Thermal resistance of channel to case (4-device operation, Tc = 25°C) Maximum lead temperature for soldering purposes (3.2 mm from case for 10 s) This transistor is an electrostatic-sensitive device. Please handle with caution. Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V ― ― ±10 μA Drain cut-off current IDSS VDS = 60 V, VGS = 0 V ― ― 100 μA V (BR) DSS ID = 10 mA, VGS = 0 V 60 ― ― V Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 0.8 ― 2.0 V Forward transfer admittance |Yfs| VDS = 10 V, ID = 2.5 A 3.0 5.0 ― S Drain-source ON resistance RDS (ON) ID = 2.5 A, VGS = 4 V ― 0.21 0.31 ID = 2.5 A, VGS = 10 V ― 0.12 0.16 ― 370 ― pF ― 60 ― pF ― 180 ― pF ― 18 ― ― 25 ― Drain-source breakdown voltage Input capacitance Ciss Reverse transfer capacitance Crss Output capacitance Coss Rise time VDS = 10 V, VGS = 0 V, f = 1 MHz tr ID = 2.5 A ton Switching time Fall time Turn-off time Total gate charge (gate-source plus gate-drain) tf toff VOUT VIN 12 Ω 10 V Turn-on time 0V 10 μs VDD ≈ 30 V VIN: tr, tf < 5 ns, dutys cycle ≤ 1% Qg Gate-source charge Qgs Gate-drain (“miller”) charge Qgd ID = 5 A, VGS = 10 V, VDD = 48 V 2 Ω ns ― 15 ― ― 170 ― ― 12 ― nC ― 8 ― nC ― 4 ― nC 2006-10-27 MP4410 Source-Drain Diode Rating and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Drain reverse current IDR ― ― ― 5 A Peak drain reverse current IDRP ― ― ― 20 A Diode forward voltage VDSF IDR = 5 A, VGS = 0 V ― −1.7 V Flyback-Diode Rating and Characteristics (Ta = 25°C) Characteristics Maximum forward current Symbol Test Condition Min Typ. Max Unit IFM ― ― ― 5 A Reverse current IR VR = 120 V ― ― 0.4 μA Reverse voltage VR IR = 100 μA 120 ― ― V Forward voltage VF IF = 1 A ― ― 1.8 V 3 2006-10-27 MP4410 RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 4 2006-10-27