Date 32M (x16) Flash Memory LH28F320BFHG-PTTLZK Mar. 19. 2003 LHF32FDJ • Handle this document carefully for it contains material protected by international copyright law. Any reproduction, full or in part, of this material is prohibited without the express written permission of the company. • When using the products covered herein, please observe the conditions written herein and the precautions outlined in the following paragraphs. In no event shall the company be liable for any damages resulting from failure to strictly adhere to these conditions and precautions. (1) The products covered herein are designed and manufactured for the following application areas. When using the products covered herein for the equipment listed in Paragraph (2), even for the following application areas, be sure to observe the precautions given in Paragraph (2). Never use the products for the equipment listed in Paragraph (3). • Office electronics • Instrumentation and measuring equipment • Machine tools • Audiovisual equipment • Home appliance • Communication equipment other than for trunk lines (2) Those contemplating using the products covered herein for the following equipment which demands high reliability, should first contact a sales representative of the company and then accept responsibility for incorporating into the design fail-safe operation, redundancy, and other appropriate measures for ensuring reliability and safety of the equipment and the overall system. • Control and safety devices for airplanes, trains, automobiles, and other transportation equipment • Mainframe computers • Traffic control systems • Gas leak detectors and automatic cutoff devices • Rescue and security equipment • Other safety devices and safety equipment, etc. (3) Do not use the products covered herein for the following equipment which demands extremely high performance in terms of functionality, reliability, or accuracy. • Aerospace equipment • Communications equipment for trunk lines • Control equipment for the nuclear power industry • Medical equipment related to life support, etc. (4) Please direct all queries and comments regarding the interpretation of the above three Paragraphs to a sales representative of the company. • Please direct all queries regarding the products covered herein to a sales representative of the company. Rev. 2.44 LHF32FDJ 1 CONTENTS PAGE PAGE 0.75mm pitch 48-Ball CSP (7mm×7mm) Pinout ....... 3 Extended Status Register Definition ......................... 15 Pin Descriptions.......................................................... 4 Partition Configuration Register Definition.............. 16 Simultaneous Operation Modes Allowed with Four Planes .................................. 5 Partition Configuration ............................................. 16 1 Electrical Specifications......................................... 17 Memory Map .............................................................. 6 1.1 Absolute Maximum Ratings ........................... 17 Identifier Codes and OTP Address for Read Operation ............................................. 7 Identifier Codes and OTP Address for Read Operation on Partition Configuration........ 7 1.2 Operating Conditions ...................................... 17 1.2.1 Capacitance .............................................. 18 1.2.2 AC Input/Output Test Conditions ............ 18 OTP Block Address Map for OTP Program............... 8 1.2.3 DC Characteristics ................................... 19 Bus Operation............................................................. 9 Command Definitions .............................................. 10 Functions of Block Lock and Block Lock-Down..... 12 Block Locking State Transitions upon Command Write................................................ 12 Block Locking State Transitions upon WP# Transition................................................. 13 1.2.4 AC Characteristics - Read-Only Operations......................... 21 1.2.5 AC Characteristics - Write Operations ................................. 25 1.2.6 Reset Operations ...................................... 27 1.2.7 Block Erase, Full Chip Erase, (Page Buffer) Program and OTP Program Performance.................... 28 Status Register Definition......................................... 14 2 Related Document Information.............................. 29 Rev. 2.44 LHF32FDJ 2 LH28F320BFHG-PTTLZK 32Mbit (2Mbit×16) Page Mode Dual Work Flash MEMORY 32M density with 16Bit I/O Interface High Performance Reads • 80/35ns 8-Word Page Mode Configurative 4-Plane Dual Work • Flexible Partitioning • Read operations during Block Erase or (Page Buffer) Program • Status Register for Each Partition Low Power Operation • 2.7V Read and Write Operations • VCCQ for Input/Output Power Supply Isolation • Automatic Power Savings Mode Reduces ICCR in Static Mode Enhanced Code + Data Storage • 5µs Typical Erase/Program Suspends OTP (One Time Program) Block • 4-Word Factory-Programmed Area • 4-Word User-Programmable Area High Performance Program with Page Buffer • 16-Word Page Buffer • 5µs/Word (Typ.) at 12V VPP Flexible Blocking Architecture • Eight 4K-word Parameter Blocks • Sixty-three 32K-word Main Blocks • Top Parameter Location Enhanced Data Protection Features • Individual Block Lock and Block Lock-Down with Zero-Latency • All blocks are locked at power-up or device reset. • Absolute Protection with VPP≤VPPLK • Block Erase, Full Chip Erase, (Page Buffer) Word Program Lockout during Power Transitions Automated Erase/Program Algorithms • 3.0V Low-Power 11µs/Word (Typ.) Programming • 12V No Glue Logic 9µs/Word (Typ.) Production Programming and 0.5s Erase (Typ.) Cross-Compatible Command Support • Basic Command Set • Common Flash Interface (CFI) Extended Cycling Capability • Minimum 100,000 Block Erase Cycles 0.75mm pitch 48-Ball CSP (7mm×7mm) Operating Temperature -40°C to +85°C ETOXTM* Flash Technology CMOS Process (P-type silicon substrate) Not designed or rated as radiation hardened The product, which is 4-Plane Page Mode Dual Work (Simultaneous Read while Erase/Program) Flash memory, is a low power, high density, low cost, nonvolatile read/write storage solution for a wide range of applications. The product can operate at VCC=2.7V-3.6V and VPP=1.65V-3.6V or 11.7V-12.3V. Its low voltage operation capability greatly extends battery life for portable applications. The product provides high performance asynchronous page mode. It allows code execution directly from Flash, thus eliminating time consuming wait states. Furthermore, its newly configurative partitioning architecture allows flexible dual work operation. The memory array block architecture utilizes Enhanced Data Protection features, and provides separate Parameter and Main Blocks that provide maximum flexibility for safe nonvolatile code and data storage. Fast program capability is provided through the use of high speed Page Buffer Program. Special OTP (One Time Program) block provides an area to store permanent code such as a unique number. * ETOX is a trademark of Intel Corporation. Rev. 2.44 LHF32FDJ 3 1 2 3 4 5 6 7 8 A A13 A11 A8 VPP WP# A19 A7 A4 B A14 A10 A18 A17 A5 A2 C A15 A12 A20 A6 A3 A1 D A16 DQ14 DQ5 DQ11 DQ2 DQ8 CE# A0 E VCCQ DQ15 DQ6 DQ12 DQ3 DQ9 DQ0 GND F GND DQ7 DQ13 DQ4 WE# RST# A9 NC VCC DQ10 DQ1 0.75mm pitch 48-BALL CSP PINOUT 7mm x 7mm TOP VIEW OE# Figure 1. 0.75mm pitch 48-Ball CSP (7mm×7mm) Pinout Rev. 2.44 LHF32FDJ 4 Table 1. Pin Descriptions Symbol A0-A20 Type INPUT Name and Function ADDRESS INPUTS: Inputs for addresses. 32M: A0-A20 INPUT/ OUTPUT DATA INPUTS/OUTPUTS: Inputs data and commands during CUI (Command User Interface) write cycles, outputs data during memory array, status register, query code, identifier code and partition configuration register code reads. Data pins float to highimpedance (High Z) when the chip or outputs are deselected. Data is internally latched during an erase or program cycle. INPUT CHIP ENABLE: Activates the device’s control logic, input buffers, decoders and sense amplifiers. CE#-high (VIH) deselects the device and reduces power consumption to standby levels. RST# INPUT RESET: When low (VIL), RST# resets internal automation and inhibits write operations which provides data protection. RST#-high (VIH) enables normal operation. After power-up or reset mode, the device is automatically set to read array mode. RST# must be low during power-up/down. OE# INPUT OUTPUT ENABLE: Gates the device’s outputs during a read cycle. WE# INPUT WRITE ENABLE: Controls writes to the CUI and array blocks. Addresses and data are latched on the rising edge of CE# or WE# (whichever goes high first). WP# INPUT WRITE PROTECT: When WP# is VIL, locked-down blocks cannot be unlocked. Erase or program operation can be executed to the blocks which are not locked and not lockeddown. When WP# is VIH, lock-down is disabled. VPP INPUT MONITORING POWER SUPPLY VOLTAGE: VPP is not used for power supply pin. With VPP≤VPPLK, block erase, full chip erase, (page buffer) program or OTP program cannot be executed and should not be attempted. Applying 12V±0.3V to VPP provides fast erasing or fast programming mode. In this mode, VPP is power supply pin. Applying 12V±0.3V to VPP during erase/program can only be done for a maximum of 1,000 cycles on each block. VPP may be connected to 12V±0.3V for a total of 80 hours maximum. Use of this pin at 12V beyond these limits may reduce block cycling capability or cause permanent damage. VCC SUPPLY DEVICE POWER SUPPLY (2.7V-3.6V): With VCC≤VLKO, all write attempts to the flash memory are inhibited. Device operations at invalid VCC voltage (see DC Characteristics) produce spurious results and should not be attempted. VCCQ SUPPLY INPUT/OUTPUT POWER SUPPLY (2.7V-3.6V): Power supply for all input/output pins. GND SUPPLY GROUND: Do not float any ground pins. DQ0-DQ15 CE# NC NO CONNECT: Lead is not internally connected; it may be driven or floated. Rev. 2.44 LHF32FDJ 5 Table 2. Simultaneous Operation Modes Allowed with Four Planes(1, 2) THEN THE MODES ALLOWED IN THE OTHER PARTITION IS: IF ONE PARTITION IS: Read Read Read Array ID/OTP Status Read Word Query Program Page Block OTP Block Full Chip Program Buffer Erase Program Erase Erase Suspend Program Suspend Read Array X X X X X X X X X Read ID/OTP X X X X X X X X X Read Status X X X X X X X X Read Query X X X X X X X X Word Program X X X X X Page Buffer Program X X X X X OTP Program Block Erase X X X X X X X Full Chip Erase X X X Program Suspend X X X X Block Erase Suspend X X X X X X X X NOTES: 1. "X" denotes the operation available. 2. Configurative Partition Dual Work Restrictions: Status register reflects partition state, not WSM (Write State Machine) state - this allows a status register for each partition. Only one partition can be erased or programmed at a time - no command queuing. Commands must be written to an address within the block targeted by that command. Rev. 2.44 LHF32FDJ 6 70 4K-WORD 1FF000H - 1FFFFFH 69 4K-WORD 1FE000H - 1FEFFFH 68 4K-WORD 1FD000H - 1FDFFFH 67 4K-WORD 1FC000H - 1FCFFFH 66 4K-WORD 1FB000H - 1FBFFFH 65 4K-WORD 1FA000H - 1FAFFFH 64 4K-WORD 1F9000H - 1F9FFFH 63 4K-WORD 1F8000H - 1F8FFFH 31 32K-WORD 0F8000H - 0FFFFFH 62 32K-WORD 1F0000H - 1F7FFFH 30 32K-WORD 0F0000H - 0F7FFFH 61 32K-WORD 1E8000H - 1EFFFFH 29 32K-WORD 0E8000H - 0EFFFFH 60 32K-WORD 1E0000H - 1E7FFFH 28 32K-WORD 0E0000H - 0E7FFFH 59 32K-WORD 1D8000H - 1DFFFFH 27 32K-WORD 0D8000H - 0DFFFFH 58 32K-WORD 1D0000H - 1D7FFFH 26 32K-WORD 0D0000H - 0D7FFFH 57 32K-WORD 1C8000H - 1CFFFFH 25 32K-WORD 0C8000H - 0CFFFFH 56 32K-WORD 1C0000H - 1C7FFFH 24 32K-WORD 0C0000H - 0C7FFFH 55 32K-WORD 1B8000H - 1BFFFFH 23 32K-WORD 0B8000H - 0BFFFFH 54 32K-WORD 1B0000H - 1B7FFFH 22 32K-WORD 0B0000H - 0B7FFFH 53 32K-WORD 1A8000H - 1AFFFFH 21 32K-WORD 0A8000H - 0AFFFFH 52 32K-WORD 1A0000H - 1A7FFFH 20 32K-WORD 0A0000H - 0A7FFFH 51 32K-WORD 198000H - 19FFFFH 19 32K-WORD 098000H - 09FFFFH 50 32K-WORD 190000H - 197FFFH 18 32K-WORD 090000H - 097FFFH 49 32K-WORD 188000H - 18FFFFH 17 32K-WORD 088000H - 08FFFFH 48 32K-WORD 180000H - 187FFFH 16 32K-WORD 080000H - 087FFFH 47 32K-WORD 178000H - 17FFFFH 15 32K-WORD 078000H - 07FFFFH 46 32K-WORD 170000H - 177FFFH 14 32K-WORD 070000H - 077FFFH 45 32K-WORD 168000H - 16FFFFH 13 32K-WORD 068000H - 06FFFFH 44 32K-WORD 160000H - 167FFFH 12 32K-WORD 060000H - 067FFFH 43 32K-WORD 158000H - 15FFFFH 11 32K-WORD 058000H - 05FFFFH 42 32K-WORD 150000H - 157FFFH 10 32K-WORD 050000H - 057FFFH 41 32K-WORD 148000H - 14FFFFH 9 32K-WORD 048000H - 04FFFFH 40 32K-WORD 140000H - 147FFFH 8 32K-WORD 040000H - 047FFFH 39 32K-WORD 138000H - 13FFFFH 7 32K-WORD 038000H - 03FFFFH 38 32K-WORD 130000H - 137FFFH 6 32K-WORD 030000H - 037FFFH 37 32K-WORD 128000H - 12FFFFH 5 32K-WORD 028000H - 02FFFFH 36 32K-WORD 120000H - 127FFFH 4 32K-WORD 020000H - 027FFFH 35 32K-WORD 118000H - 11FFFFH 3 32K-WORD 018000H - 01FFFFH 34 32K-WORD 110000H - 117FFFH 2 32K-WORD 010000H - 017FFFH 33 32K-WORD 108000H - 10FFFFH 1 32K-WORD 008000H - 00FFFFH 32 32K-WORD 100000H - 107FFFH 0 32K-WORD 000000H - 007FFFH PLANE1 (UNIFORM PLANE) BLOCK NUMBER ADDRESS RANGE PLANE0 (UNIFORM PLANE) PLANE2 (UNIFORM PLANE) PLANE3 (PARAMETER PLANE) BLOCK NUMBER ADDRESS RANGE Figure 2. Memory Map (Top Parameter) Rev. 2.44 LHF32FDJ 7 Table 3. Identifier Codes and OTP Address for Read Operation Code Address [A15-A0] Data [DQ15-DQ0] Notes Manufacturer Code Manufacturer Code 0000H 00B0H 1 Device Code Top Parameter Device Code 0001H 00B4H 1, 2 Block Lock Configuration Code Block is Unlocked DQ0 = 0 3 DQ0 = 1 3 DQ1 = 0 3 DQ1 = 1 3 Block Address +2 Block is Locked Block is not Locked-Down Block is Locked-Down Device Configuration Code Partition Configuration Register 0006H PCRC 1, 4 OTP OTP Lock 0080H OTP-LK 1, 5 0081-0088H OTP 1, 6 OTP NOTES: 1. The address A20-A16 are shown in below table for reading the manufacturer code, device code, device configuration code and OTP data. 2. Top parameter device has its parameter blocks in the plane3 (The highest address). 3. Block Address = The beginning location of a block address within the partition to which the Read Identifier Codes/OTP command (90H) has been written. DQ15-DQ2 are reserved for future implementation. 4. PCRC=Partition Configuration Register Code. 5. OTP-LK=OTP Block Lock configuration. 6. OTP=OTP Block data. Table 4. Identifier Codes and OTP Address for Read Operation on Partition Configuration(1) (32M-bit device) Partition Configuration Register (2) Address (32M-bit device) [A20-A16] PCR.10 PCR.9 PCR.8 0 0 0 00H 0 0 1 00H or 08H 0 1 0 00H or 10H 1 0 0 00H or 18H 0 1 1 00H or 08H or 10H 1 1 0 00H or 10H or 18H 1 0 1 00H or 08H or 18H 1 1 1 00H or 08H or 10H or 18H NOTES: 1. The address to read the identifier codes or OTP data is dependent on the partition which is selected when writing the Read Identifier Codes/OTP command (90H). 2. Refer to Table 12 for the partition configuration register. Rev. 2.44 LHF32FDJ 8 [A20-A0] 000088H Customer Programmable Area 000085H 000084H Factory Programmed Area 000081H 000080H Reserved for Future Implementation (DQ15-DQ2) Customer Programmable Area Lock Bit (DQ1) Factory Programmed Area Lock Bit (DQ0) Figure 3. OTP Block Address Map for OTP Program (The area outside 80H~88H cannot be used.) Rev. 2.44 LHF32FDJ 9 Table 5. Bus Operation(1, 2) Mode Notes RST# CE# OE# WE# Address VPP DQ0-15 6 VIH VIL VIL VIH X X DOUT Output Disable VIH VIL VIH VIH X X High Z Standby VIH VIH X X X X High Z Read Array Reset 3 VIL X X X X X High Z Read Identifier Codes/OTP 6 VIH VIL VIL VIH See Table 3 and Table 4 X See Table 3 and Table 4 6,7 VIH VIL VIL VIH See Appendix X See Appendix 4,5,6 VIH VIL VIH VIL X X DIN Read Query Write NOTES: 1. Refer to DC Characteristics. When VPP≤VPPLK, memory contents can be read, but cannot be altered. 2. X can be VIL or VIH for control pins and addresses, and VPPLK or VPPH1/2 for VPP. See DC Characteristics for VPPLK and VPPH1/2 voltages. 3. RST# at GND±0.2V ensures the lowest power consumption. 4. Command writes involving block erase, full chip erase, (page buffer) program or OTP program are reliably executed when VPP=VPPH1/2 and VCC=2.7V-3.6V. 5. Refer to Table 6 for valid DIN during a write operation. 6. Never hold OE# low and WE# low at the same timing. 7. Refer to Appendix of LH28F320BF series for more information about query code. Rev. 2.44 LHF32FDJ 10 Table 6. Command Definitions(11) Command Read Array Bus Cycles Req’d First Bus Cycle Notes 1 Oper (1) Addr (2) Second Bus Cycle Data Write PA FFH (1) Oper Addr(2) Data(3) Read Identifier Codes/OTP ≥2 4 Write PA 90H Read IA or OA ID or OD Read Query ≥2 4 Write PA 98H Read QA QD Read PA SRD Read Status Register 2 Write PA 70H Clear Status Register 1 Write PA 50H Block Erase 2 5 Write BA 20H Write BA D0H Full Chip Erase 2 5,9 Write X 30H Write X D0H 2 5,6 Write WA 40H or 10H Write WA WD ≥4 5,7 Write WA E8H Write WA N-1 Block Erase and (Page Buffer) Program Suspend 1 8,9 Write PA B0H Block Erase and (Page Buffer) Program Resume 1 8,9 Write PA D0H Set Block Lock Bit 2 Write BA 60H Write BA 01H Clear Block Lock Bit 2 Write BA 60H Write BA D0H Set Block Lock-down Bit 2 Write BA 60H Write BA 2FH OTP Program 2 Write OA C0H Write OA OD Set Partition Configuration Register 2 Write PCRC 60H Write PCRC 04H Program Page Buffer Program 10 9 NOTES: 1. Bus operations are defined in Table 5. 2. All addresses which are written at the first bus cycle should be the same as the addresses which are written at the second bus cycle. X=Any valid address within the device. PA=Address within the selected partition. IA=Identifier codes address (See Table 3 and Table 4). QA=Query codes address. Refer to Appendix of LH28F320BF series for details. BA=Address within the block being erased, set/cleared block lock bit or set block lock-down bit. WA=Address of memory location for the Program command or the first address for the Page Buffer Program command. OA=Address of OTP block to be read or programmed (See Figure 3). PCRC=Partition configuration register code presented on the address A0-A15. 3. ID=Data read from identifier codes. (See Table 3 and Table 4). QD=Data read from query database. Refer to Appendix of LH28F320BF series for details. SRD=Data read from status register. See Table 10 and Table 11 for a description of the status register bits. WD=Data to be programmed at location WA. Data is latched on the rising edge of WE# or CE# (whichever goes high first) during command write cycles. OD=Data within OTP block. Data is latched on the rising edge of WE# or CE# (whichever goes high first) during command write cycles. N-1=N is the number of the words to be loaded into a page buffer. 4. Following the Read Identifier Codes/OTP command, read operations access manufacturer code, device code, block lock configuration code, partition configuration register code and the data within OTP block (See Table 3 and Table 4). The Read Query command is available for reading CFI (Common Flash Interface) information. 5. Block erase, full chip erase or (page buffer) program cannot be executed when the selected block is locked. Unlocked block can be erased or programmed when RST# is VIH. 6. Either 40H or 10H are recognized by the CUI (Command User Interface) as the program setup. 7. Following the third bus cycle, input the program sequential address and write data of "N" times. Finally, input the any valid address within the target block to be programmed and the confirm command (D0H). Refer to Appendix of Rev. 2.44 LHF32FDJ 11 LH28F320BF series for details. 8. If the program operation in one partition is suspended and the erase operation in other partition is also suspended, the suspended program operation should be resumed first, and then the suspended erase operation should be resumed next. 9. Full chip erase and OTP program operations can not be suspended. The OTP Program command can not be accepted while the block erase operation is being suspended. 10. Following the Clear Block Lock Bit command, block which is not locked-down is unlocked when WP# is VIL. When WP# is VIH, lock-down bit is disabled and the selected block is unlocked regardless of lock-down configuration. 11. Commands other than those shown above are reserved by SHARP for future device implementations and should not be used. Rev. 2.44 LHF32FDJ 12 Table 7. Functions of Block Lock(5) and Block Lock-Down Current State State WP# DQ1 (1) DQ0(1) State Name Erase/Program Allowed (2) [000] 0 0 0 Unlocked Yes [001](3) 0 0 1 Locked No [011] 0 1 1 Locked-down No [100] 1 0 0 Unlocked Yes [101](3) 1 0 1 Locked No [110](4) 1 1 0 Lock-down Disable Yes [111] 1 1 1 Lock-down Disable No NOTES: 1. DQ0=1: a block is locked; DQ0=0: a block is unlocked. DQ1=1: a block is locked-down; DQ1=0: a block is not locked-down. 2. Erase and program are general terms, respectively, to express: block erase, full chip erase and (page buffer) program operations. 3. At power-up or device reset, all blocks default to locked state and are not locked-down, that is, [001] (WP#=0) or [101] (WP#=1), regardless of the states before power-off or reset operation. 4. When WP# is driven to VIL in [110] state, the state changes to [011] and the blocks are automatically locked. 5. OTP (One Time Program) block has the lock function which is different from those described above. Table 8. Block Locking State Transitions upon Command Write(4) Current State Result after Lock Command Written (Next State) State WP# DQ1 DQ0 Set Lock(1) Clear Lock(1) Set Lock-down(1) [000] 0 0 0 [001] No Change [011](2) [001] 0 0 1 No Change(3) [000] [011] [011] 0 1 1 No Change No Change No Change [100] 1 0 0 [101] No Change [111](2) [101] 1 0 1 No Change [100] [111] [110] 1 1 0 [111] No Change [111](2) [111] 1 1 1 No Change [110] No Change NOTES: 1. "Set Lock" means Set Block Lock Bit command, "Clear Lock" means Clear Block Lock Bit command and "Set Lock-down" means Set Block Lock-Down Bit command. 2. When the Set Block Lock-Down Bit command is written to the unlocked block (DQ0=0), the corresponding block is locked-down and automatically locked at the same time. 3. "No Change" means that the state remains unchanged after the command written. 4. In this state transitions table, assumes that WP# is not changed and fixed VIL or VIH. Rev. 2.44 LHF32FDJ 13 Table 9. Block Locking State Transitions upon WP# Transition(4) Current State Previous State Result after WP# Transition (Next State) State WP# DQ1 DQ0 WP#=0→1(1) WP#=1→0(1) - [000] 0 0 0 [100] - - [001] 0 0 1 [101] - [110] - [011] 0 1 1 [111] - - [100] 1 0 0 - [000] - [101] 1 0 1 - [001] - [110] 1 1 0 - [011](3) - [111] 1 1 1 - [011] [110](2) Other than [110](2) NOTES: 1. "WP#=0→1" means that WP# is driven to VIH and "WP#=1→0" means that WP# is driven to VIL. 2. State transition from the current state [011] to the next state depends on the previous state. 3. When WP# is driven to VIL in [110] state, the state changes to [011] and the blocks are automatically locked. 4. In this state transitions table, assumes that lock configuration commands are not written in previous, current and next state. Rev. 2.44 LHF32FDJ 14 Table 10. Status Register Definition R R R R R R R R 15 14 13 12 11 10 9 8 WSMS BESS BEFCES PBPOPS VPPS PBPSS DPS R 7 6 5 4 3 2 1 0 SR.15 - SR.8 = RESERVED FOR FUTURE ENHANCEMENTS (R) SR.7 = WRITE STATE MACHINE STATUS (WSMS) 1 = Ready 0 = Busy SR.6 = BLOCK ERASE SUSPEND STATUS (BESS) 1 = Block Erase Suspended 0 = Block Erase in Progress/Completed SR.5 = BLOCK ERASE AND FULL CHIP ERASE STATUS (BEFCES) 1 = Error in Block Erase or Full Chip Erase 0 = Successful Block Erase or Full Chip Erase SR.4 = (PAGE BUFFER) PROGRAM AND OTP PROGRAM STATUS (PBPOPS) 1 = Error in (Page Buffer) Program or OTP Program 0 = Successful (Page Buffer) Program or OTP Program SR.3 = VPP STATUS (VPPS) 1 = VPP LOW Detect, Operation Abort 0 = VPP OK SR.2 = (PAGE BUFFER) PROGRAM SUSPEND STATUS (PBPSS) 1 = (Page Buffer) Program Suspended 0 = (Page Buffer) Program in Progress/Completed SR.1 = DEVICE PROTECT STATUS (DPS) 1 = Erase or Program Attempted on a Locked Block, Operation Abort 0 = Unlocked NOTES: Status Register indicates the status of the partition, not WSM (Write State Machine). Even if the SR.7 is "1", the WSM may be occupied by the other partition when the device is set to 2, 3 or 4 partitions configuration. Check SR.7 to determine block erase, full chip erase, (page buffer) program or OTP program completion. SR.6 - SR.1 are invalid while SR.7="0". If both SR.5 and SR.4 are "1"s after a block erase, full chip erase, (page buffer) program, set/clear block lock bit, set block lock-down bit, set partition configuration register attempt, an improper command sequence was entered. SR.3 does not provide a continuous indication of VPP level. The WSM interrogates and indicates the VPP level only after Block Erase, Full Chip Erase, (Page Buffer) Program or OTP Program command sequences. SR.3 is not guaranteed to report accurate feedback when VPP≠VPPH1, VPPH2 or VPPLK. SR.1 does not provide a continuous indication of block lock bit. The WSM interrogates the block lock bit only after Block Erase, Full Chip Erase, (Page Buffer) Program or OTP Program command sequences. It informs the system, depending on the attempted operation, if the block lock bit is set. Reading the block lock configuration codes after writing the Read Identifier Codes/OTP command indicates block lock bit status. SR.15 - SR.8 and SR.0 are reserved for future use and should be masked out when polling the status register. SR.0 = RESERVED FOR FUTURE ENHANCEMENTS (R) Rev. 2.44 LHF32FDJ 15 Table 11. Extended Status Register Definition R R R R R R R R 15 14 13 12 11 10 9 8 SMS R R R R R R R 7 6 5 4 3 2 1 0 XSR.15-8 = RESERVED FOR FUTURE ENHANCEMENTS (R) XSR.7 = STATE MACHINE STATUS (SMS) 1 = Page Buffer Program available 0 = Page Buffer Program not available NOTES: After issue a Page Buffer Program command (E8H), XSR.7="1" indicates that the entered command is accepted. If XSR.7 is "0", the command is not accepted and a next Page Buffer Program command (E8H) should be issued again to check if page buffer is available or not. XSR.15-8 and XSR.6-0 are reserved for future use and should be masked out when polling the extended status XSR.6-0 = RESERVED FOR FUTURE ENHANCEMENTS (R) register. Rev. 2.44 LHF32FDJ 16 Table 12. Partition Configuration Register Definition R R R R R PC2 PC1 PC0 15 14 13 12 11 10 9 8 R R R R R R R R 7 6 5 4 3 2 1 0 PCR.15-11 and PCR.7-0 are reserved for future use and should be masked out when checking the partition configuration register. PLANE0 PLANE1 PLANE3 0 1 1 PLANE2 PARTITIONING FOR DUAL WORK PARTITION2 PARTITION1 PARTITION0 PC2 PC1PC0 PLANE0 PLANE1 1 1 0 PLANE2 PARTITION2 PARTITION1 PARTITION0 PLANE0 1 0 1 PLANE1 PARTITION2 PARTITION1 PARTITION0 PLANE2 PLANE0 PLANE0 PLANE1 1 1 1 PLANE2 PLANE0 PARTITION3 PARTITION2 PARTITION1 PARTITION0 PLANE3 PLANE1 PLANE1 PLANE2 PLANE3 See Figure 4 for the detail on partition configuration. PARTITION0 PARTITION1 1 0 0 After power-up or device reset, PCR10-8 (PC2-0) is set to "001" in a bottom parameter device and "100" in a top parameter device. PARTITION0 PLANE0 PLANE2 0 1 0 PLANE3 PARTITION1 NOTES: PARTITION0 PLANE1 PLANE2 0 0 1 PLANE3 PARTITION1 PLANE0 PLANE1 PLANE2 0 0 0 PARTITIONING FOR DUAL WORK PARTITION0 PLANE3 PC2 PC1PC0 PCR.7-0 = RESERVED FOR FUTURE ENHANCEMENTS (R) PLANE3 PCR.10-8 = PARTITION CONFIGURATION (PC2-0) 000 = No partitioning. Dual Work is not allowed. 001 = Plane1-3 are merged into one partition. (default in a bottom parameter device) 010 = Plane 0-1 and Plane2-3 are merged into one partition respectively. 100 = Plane 0-2 are merged into one partition. (default in a top parameter device) 011 = Plane 2-3 are merged into one partition. There are three partitions in this configuration. Dual work operation is available between any two partitions. 110 = Plane 0-1 are merged into one partition. There are three partitions in this configuration. Dual work operation is available between any two partitions. 101 = Plane 1-2 are merged into one partition. There are three partitions in this configuration. Dual work operation is available between any two partitions. 111 = There are four partitions in this configuration. Each plane corresponds to each partition respectively. Dual work operation is available between any two partitions. PLANE3 PCR.15-11 = RESERVED FOR FUTURE ENHANCEMENTS (R) Figure 4. Partition Configuration Rev. 2.44 LHF32FDJ 1 Electrical Specifications 17 *WARNING: Stressing the device beyond the "Absolute Maximum Ratings" may cause permanent damage. These are stress ratings only. Operation beyond the "Operating Conditions" is not recommended and extended exposure beyond the "Operating Conditions" may affect device reliability. 1.1 Absolute Maximum Ratings* Operating Temperature During Read, Erase and Program ...-40°C to +85°C (1) NOTES: 1. Operating temperature is for extended temperature product defined by this specification. 2. All specified voltages are with respect to GND. Minimum DC voltage is -0.5V on input/output pins and -0.2V on VCC and VPP pins. During transitions, this level may undershoot to -2.0V for periods <20ns. Maximum DC voltage on input/output pins is VCC+0.5V which, during transitions, may overshoot to VCC+2.0V for periods <20ns. 3. Maximum DC voltage on VPP may overshoot to +13.0V for periods <20ns. 4. VPP erase/program voltage is normally 2.7V-3.6V. Applying 11.7V-12.3V to VPP during erase/program can be done for a maximum of 1,000 cycles on the main blocks and 1,000 cycles on the parameter blocks. VPP may be connected to 11.7V-12.3V for a total of 80 hours maximum. 5. Output shorted for no more than one second. No more than one output shorted at a time. Storage Temperature During under Bias............................... -40°C to +85°C During non Bias................................ -65°C to +125°C Voltage On Any Pin (except VCC and VPP).............. -0.5V to VCC+0.5V (2) VCC and VCCQ Supply Voltage .......... -0.2V to +3.9V (2) VPP Supply Voltage .................... -0.2V to +12.6V (2, 3, 4) Output Short Circuit Current ........................... 100mA (5) 1.2 Operating Conditions Parameter Symbol Min. Typ. Max. Unit TA -40 +25 +85 °C VCC Supply Voltage VCC 2.7 3.0 3.6 V 1 I/O Supply Voltage VCCQ 2.7 3.0 3.6 V 1 VPP Voltage when Used as a Logic Control VPPH1 1.65 3.0 3.6 V 1 VPP Supply Voltage VPPH2 11.7 12 12.3 V 1, 2 Operating Temperature Main Block Erase Cycling: VPP=VPPH1 100,000 Cycles Parameter Block Erase Cycling: VPP=VPPH1 100,000 Cycles Main Block Erase Cycling: VPP=VPPH2, 80 hrs. 1,000 Cycles Parameter Block Erase Cycling: VPP=VPPH2, 80 hrs. 1,000 Cycles 80 Hours Maximum VPP hours at VPPH2 Notes NOTES: 1. See DC Characteristics tables for voltage range-specific specification. 2. Applying VPP=11.7V-12.3V during a erase or program can be done for a maximum of 1,000 cycles on the main blocks and 1,000 cycles on the parameter blocks. A permanent connection to VPP=11.7V-12.3V is not allowed and can cause damage to the device. Rev. 2.44 LHF32FDJ 18 1.2.1 Capacitance(1) (TA=+25°C, f=1MHz) Parameter Symbol Condition CIN COUT Input Capacitance Output Capacitance Min. Typ. Max. Unit VIN=0.0V 4 7 pF VOUT=0.0V 6 10 pF NOTE: 1. Sampled, not 100% tested. 1.2.2 AC Input/Output Test Conditions VCCQ INPUT VCCQ/2 TEST POINTS VCCQ/2 OUTPUT 0.0 AC test inputs are driven at VCCQ(min) for a Logic "1" and 0.0V for a Logic "0". Input timing begins, and output timing ends at VCCQ/2. Input rise and fall times (10% to 90%) < 5ns. Worst case speed conditions are when VCC=VCC(min). Figure 5. Transient Input/Output Reference Waveform for VCC=2.7V-3.6V Table 13. Configuration Capacitance Loading Value VCCQ(min)/2 1N914 Test Configuration CL (pF) VCC=2.7V-3.6V 50 RL=3.3k DEVICE UNDER TEST CL Includes Jig Capacitances. OUT CL Figure 6. Transient Equivalent Testing Load Circuit Rev. 2.44 LHF32FDJ 19 1.2.3 DC Characteristics VCC=2.7V-3.6V Symbol Parameter Notes Min. Typ. Max. Unit Test Conditions VCC=VCCMax., VCCQ=VCCQMax., VIN/VOUT=VCCQ or GND ILI Input Load Current 1 -1.0 +1.0 µA ILO Output Leakage Current 1 -1.0 +1.0 µA 1 4 20 µA VCC=VCCMax., CE#=RST#= VCCQ±0.2V, WP#=VCCQ or GND 1,4 4 20 µA VCC=VCCMax., CE#=GND±0.2V, WP#=VCCQ or GND 1 4 20 µA RST#=GND±0.2V Average VCC Read Current Normal Mode 1,7 15 25 mA Average VCC Read 8 Word Read Current Page Mode 1,7 5 10 mA VCC=VCCMax., CE#=VIL, OE#=VIH, f=5MHz 1,5,7 20 60 mA VPP=VPPH1 1,5,7 10 20 mA VPP=VPPH2 1,5,7 10 30 mA VPP=VPPH1 1,5,7 4 10 mA VPP=VPPH2 ICCS VCC Standby Current ICCAS VCC Automatic Power Savings Current ICCD VCC Reset Power-Down Current ICCR ICCW VCC (Page Buffer) Program Current ICCE VCC Block Erase, Full Chip Erase Current ICCWS ICCES VCC (Page Buffer) Program or Block Erase Suspend Current 1,2,7 10 200 µA CE#=VIH IPPS IPPR VPP Standby or Read Current 1,6,7 2 5 µA VPP≤VCC IPPW VPP (Page Buffer) Program Current 1,5,6,7 2 5 µA VPP=VPPH1 1,5,6,7 10 30 mA VPP=VPPH2 IPPE VPP Block Erase, Full Chip Erase Current 1,5,6,7 2 5 µA VPP=VPPH1 1,5,6,7 5 15 mA VPP=VPPH2 IPPWS VPP (Page Buffer) Program Suspend Current 1,6,7 2 5 µA VPP=VPPH1 1,6,7 10 200 µA VPP=VPPH2 IPPES VPP Block Erase Suspend Current 1,6,7 2 5 µA VPP=VPPH1 1,6,7 10 200 µA VPP=VPPH2 Rev. 2.44 LHF32FDJ 20 DC Characteristics (Continued) VCC=2.7V-3.6V Symbol Parameter Notes Min. Typ. Max. Unit VIL Input Low Voltage 5 -0.4 0.4 V VIH Input High Voltage 5 2.4 VCCQ + 0.4 V VOL Output Low Voltage 5 0.2 VCCQ -0.2 VOH Output High Voltage VPPLK VPP Lockout during Normal Operations VPPH1 VPP during Block Erase, Full Chip Erase, (Page Buffer) Program or OTP Program Operations 6 1.65 VPPH2 VPP during Block Erase, Full Chip Erase, (Page Buffer) Program or OTP Program Operations 6 11.7 VLKO VCC Lockout Voltage 5 3,5,6 1.5 Test Conditions V VCC=VCCMin., VCCQ=VCCQMin., IOL=100µA V VCC=VCCMin., VCCQ=VCCQMin., IOH=-100µA 0.4 V 3.0 3.6 V 12 12.3 V V NOTES: 1. All currents are in RMS unless otherwise noted. Typical values are the reference values at VCC=3.0V and TA=+25°C unless VCC is specified. 2. ICCWS and ICCES are specified with the device de-selected. If read or (page buffer) program is executed while in block erase suspend mode, the device’s current draw is the sum of ICCES and ICCR or ICCW. If read is executed while in (page buffer) program suspend mode, the device’s current draw is the sum of ICCWS and ICCR. 3. Block erase, full chip erase, (page buffer) program and OTP program are inhibited when VPP≤VPPLK, and not guaranteed in the range between VPPLK(max.) and VPPH1(min.), between VPPH1(max.) and VPPH2(min.) and above VPPH2(max.). 4. The Automatic Power Savings (APS) feature automatically places the device in power save mode after read cycle completion. Standard address access timings (tAVQV) provide new data when addresses are changed. 5. Sampled, not 100% tested. 6. VPP is not used for power supply pin. With VPP≤VPPLK, block erase, full chip erase, (page buffer) program and OTP program cannot be executed and should not be attempted. Applying 12V±0.3V to VPP provides fast erasing or fast programming mode. In this mode, VPP is power supply pin and supplies the memory cell current for block erasing and (page buffer) programming. Use similar power supply trace widths and layout considerations given to the VCC power bus. Applying 12V±0.3V to VPP during erase/program can only be done for a maximum of 1,000 cycles on each block. VPP may be connected to 12V±0.3V for a total of 80 hours maximum. 7. The operating current in dual work is the sum of the operating current (read, erase, program) in each plane. Rev. 2.44 LHF32FDJ 21 1.2.4 AC Characteristics - Read-Only Operations(1) VCC=2.7V-3.6V, TA=-40°C to +85°C Symbol Parameter Notes Min. Max. Unit tAVAV Read Cycle Time tAVQV Address to Output Delay tELQV CE# to Output Delay tAPA Page Address Access Time tGLQV OE# to Output Delay tPHQV RST# High to Output Delay tEHQZ, tGHQZ CE# or OE# to Output in High Z, Whichever Occurs First 2 tELQX CE# to Output in Low Z 2 0 ns tGLQX OE# to Output in Low Z 2 0 ns tOH Output Hold from First Occurring Address, CE# or OE# change 2 0 ns tAVEL, tAVGL Address Setup to CE#, OE# Going Low for Reading Status Register 4, 6 10 ns tELAX, tGLAX Address Hold from CE#, OE# Going Low for Reading Status Register 5, 6 30 ns tEHEL, tGHGL CE#, OE# Pulse Width High for Reading Status Register 6 25 ns 80 3 3 ns 80 ns 80 ns 35 ns 20 ns 150 ns 20 ns NOTES: 1. See AC input/output reference waveform for timing measurements and maximum allowable input slew rate. 2. Sampled, not 100% tested. 3. OE# may be delayed up to tELQV tGLQV after the falling edge of CE# without impact to tELQV. 4. Address setup time (tAVEL, tAVGL) is defined from the falling edge of CE# or OE# (whichever goes low last). 5. Address hold time (tELAX, tGLAX) is defined from the falling edge of CE# or OE# (whichever goes low last). 6. Specifications tAVEL, tAVGL, tELAX, tGLAX and tEHEL, tGHGL for read operations apply to only status register read operations. Rev. 2.44 LHF32FDJ VIH A20-0 (A) 22 VALID ADDRESS tAVAV VIL tEHQZ tGHQZ tAVQV tEHEL VIH CE# (E) VIL tAVEL tELAX tAVGL tGHGL tGLAX VIH OE# (G) VIL tELQV VIH WE# (W) VIL tGLQV tGLQX tOH tOH tELQX VOH DQ15-0 (D/Q) High Z VALID OUTPUT VOL tPHQV RST# (P) VIH VIL Figure 7. AC Waveform for Single Asynchronous Read Operations from Status Register, Identifier Codes, OTP Block or Query Code Rev. 2.44 LHF32FDJ A20-3 (A) VIH 23 VALID ADDRESS VIL tAVAV tAVQV A2-0 (A) CE# (E) VIH VALID ADDRESS VALID ADDRESS VIL VALID ADDRESS VALID ADDRESS VIH VIL tELQV OE# (G) WE# (W) tEHQZ tGHQZ VIH VIL VIH tGLQV VIL tGLQX tAPA tELQX DQ15-0 (D/Q) VOH High Z VALID OUTPUT VOL VALID OUTPUT tOH VALID OUTPUT VALID OUTPUT tPHQV RST# (P) VIH VIL Figure 8. AC Waveform for Asynchronous 4-Word Page Mode Read Operations from Main Blocks or Parameter Blocks Rev. 2.44 LHF32FDJ A20-3 (A) VIH 24 VALID ADDRESS VIL tAVAV tAVQV A2-0 (A) CE# (E) VIH VIL VALID ADDRESS VALID ADDRESS VALID ADDRESS VALID ADDRESS VALID ADDRESS VALID ADDRESS VALID ADDRESS VALID ADDRESS VIH VIL tEHQZ tGHQZ tELQV OE# (G) WE# (W) VIH VIL VIH tGLQV VIL tGLQX tAPA tELQX DQ15-0 (D/Q) VOH High Z VOL VALID OUTPUT VALID OUTPUT tOH VALID OUTPUT VALID OUTPUT VALID OUTPUT VALID OUTPUT VALID OUTPUT VALID OUTPUT tPHQV RST# (P) VIH VIL Figure 9. AC Waveform for Asynchronous 8-Word Page Mode Read Operations from Main Blocks or Parameter Blocks Rev. 2.44 LHF32FDJ 25 1.2.5 AC Characteristics - Write Operations(1), (2) VCC=2.7V-3.6V, TA=-40°C to +85°C Symbol Parameter tAVAV Write Cycle Time tPHWL (tPHEL) RST# High Recovery to WE# (CE#) Going Low tELWL (tWLEL) CE# (WE#) Setup to WE# (CE#) Going Low tWLWH (tELEH) WE# (CE#) Pulse Width tDVWH (tDVEH) Notes Min. Max. Unit 80 ns 150 ns 0 ns 4 55 ns Data Setup to WE# (CE#) Going High 8 40 ns tAVWH (tAVEH) Address Setup to WE# (CE#) Going High 8 50 ns tWHEH (tEHWH) CE# (WE#) Hold from WE# (CE#) High 0 ns tWHDX (tEHDX) Data Hold from WE# (CE#) High 0 ns tWHAX (tEHAX) Address Hold from WE# (CE#) High 0 ns tWHWL (tEHEL) WE# (CE#) Pulse Width High 5 25 ns tSHWH (tSHEH) WP# High Setup to WE# (CE#) Going High 3 0 ns tVVWH (tVVEH) VPP Setup to WE# (CE#) Going High 3 200 ns tWHGL (tEHGL) Write Recovery before Read 30 ns tQVSL WP# High Hold from Valid SRD 3, 6 0 ns tQVVL VPP Hold from Valid SRD 3, 6 0 ns tWHR0 (tEHR0) WE# (CE#) High to SR.7 Going "0" 3, 7 3 tAVQV+ 50 ns NOTES: 1. The timing characteristics for reading the status register during block erase, full chip erase, (page buffer) program and OTP program operations are the same as during read-only operations. Refer to AC Characteristics for read-only operations. 2. A write operation can be initiated and terminated with either CE# or WE#. 3. Sampled, not 100% tested. 4. Write pulse width (tWP) is defined from the falling edge of CE# or WE# (whichever goes low last) to the rising edge of CE# or WE# (whichever goes high first). Hence, tWP=tWLWH=tELEH=tWLEH=tELWH. 5. Write pulse width high (tWPH) is defined from the rising edge of CE# or WE# (whichever goes high first) to the falling edge of CE# or WE# (whichever goes low last). Hence, tWPH=tWHWL=tEHEL=tWHEL=tEHWL. 6. VPP should be held at VPP=VPPH1/2 until determination of block erase, full chip erase, (page buffer) program or OTP program success (SR.1/3/4/5=0). 7. tWHR0 (tEHR0) after the Read Query or Read Identifier Codes/OTP command=tAVQV+100ns. 8. Refer to Table 6 for valid address and data for block erase, full chip erase, (page buffer) program, OTP program or lock bit configuration. Rev. 2.44 LHF32FDJ NOTE 1 A20-0 (A) VIH VIL NOTE 2 NOTE 3 VALID ADDRESS VALID ADDRESS tAVAV CE# (E) tAVWH (tAVEH) NOTES 5, 6 VIL tWHEH (tEHWH) tWHGL (tEHGL) NOTES 5, 6 VIH VIL tWHWL (tEHEL) VIH VIL tWLWH (tELEH ) DQ15-0 (D/Q) NOTE 5 VALID ADDRESS VIH tPHWL (tPHEL) WE# (W) NOTE 4 tWHAX (tEHAX) tELWL (tWLEL) OE# (G) 26 tWHQV1,2,3 (tEHQV1,2,3) tWHDX (tEHDX) tDVWH (tDVEH) VIH VIL DATA IN VALID SRD DATA IN tWHR0 (tEHR0) SR.7 (R) "1" "0" RST# (P) WP# (S) VIH VIL tSHWH (tSHEH) tQVSL tVVWH (tVVEH) tQVVL VIH VIL VPPH1,2 VPP (V) VPPLK VIL NOTES: 1. VCC power-up and standby. 2. Write each first cycle command. 3. Write each second cycle command or valid address and data. 4. Automated erase or program delay. 5. Read status register data. 6. For read operation, OE# and CE# must be driven active, and WE# de-asserted. Figure 10. AC Waveform for Write Operations Rev. 2.44 LHF32FDJ 27 1.2.6 Reset Operations tPHQV RST# VIH (P) VIL V DQ15-0 (D/Q) OH VOL tPLPH High Z VALID OUTPUT (A) Reset during Read Array Mode SR.7="1" tPLRH RST# VIH VIL (P) V DQ15-0 (D/Q) OH VOL ABORT COMPLETE tPHQV tPLPH High Z VALID OUTPUT (B) Reset during Erase or Program Mode VCC(min) VCC tVHQV GND t2VPH RST# (P) tPHQV VIH VIL V DQ15-0 (D/Q) OH VOL High Z VALID OUTPUT (C) RST# rising timing Figure 11. AC Waveform for Reset Operations Reset AC Specifications (VCC=2.7V-3.6V, TA=-40°C to +85°C) Symbol Parameter Notes Min. 100 tPLPH RST# Low to Reset during Read (RST# should be low during power-up.) 1, 2, 3 tPLRH RST# Low to Reset during Erase or Program 1, 3, 4 t2VPH VCC 2.7V to RST# High 1, 3, 5 tVHQV VCC 2.7V to Output Delay 3 Max. Unit ns 22 100 µs ns 1 ms NOTES: 1. A reset time, tPHQV, is required from the later of SR.7 going "1" or RST# going high until outputs are valid. Refer to AC Characteristics - Read-Only Operations for tPHQV. 2. tPLPH is <100ns the device may still reset but this is not guaranteed. 3. Sampled, not 100% tested. 4. If RST# asserted while a block erase, full chip erase, (page buffer) program or OTP program operation is not executing, the reset will complete within 100ns. 5. When the device power-up, holding RST# low minimum 100ns is required after VCC has been in predefined range and also has been in stable there. Rev. 2.44 LHF32FDJ 28 1.2.7 Block Erase, Full Chip Erase, (Page Buffer) Program and OTP Program Performance(3) VCC=2.7V-3.6V, TA=-40°C to +85°C Symbol Parameter Page Buffer Command is Notes Used or not Used VPP=VPPH1 (In System) VPP=VPPH2 (In Manufacturing) Unit Min. Typ.(1) Max.(2) Min. Typ.(1) Max.(2) tWPB 4K-Word Parameter Block Program Time 2 Not Used 0.05 0.3 0.04 0.12 s 2 Used 0.03 0.12 0.02 0.06 s tWMB 32K-Word Main Block Program Time 2 Not Used 0.38 2.4 0.31 1.0 s 2 Used 0.24 1.0 0.17 0.5 s tWHQV1/ tEHQV1 Word Program Time 2 Not Used 11 200 9 185 µs 2 Used 7 100 5 90 µs tWHOV1/ tEHOV1 OTP Program Time 2 Not Used 36 400 27 185 µs tWHQV2/ tEHQV2 4K-Word Parameter Block Erase Time 2 - 0.3 4 0.2 4 s tWHQV3/ tEHQV3 32K-Word Main Block Erase Time 2 - 0.6 5 0.5 5 s Full Chip Erase Time 2 40 350 33 350 s tWHRH1/ tEHRH1 (Page Buffer) Program Suspend Latency Time to Read 4 - 5 10 5 10 µs tWHRH2/ tEHRH2 Block Erase Suspend Latency Time to Read 4 - 5 20 5 20 µs tERES Latency Time from Block Erase Resume Command to Block Erase Suspend Command 5 - 500 µs 500 NOTES: 1. Typical values measured at VCC=3.0V, VPP=3.0V or 12V, and TA=+25°C. Assumes corresponding lock bits are not set. Subject to change based on device characterization. 2. Excludes external system-level overhead. 3. Sampled, but not 100% tested. 4. A latency time is required from writing suspend command (WE# or CE# going high) until SR.7 going "1". 5. If the interval time from a Block Erase Resume command to a subsequent Block Erase Suspend command is shorter than tERES and its sequence is repeated, the block erase operation may not be finished. Rev. 2.44 LHF32FDJ 29 2 Related Document Information(1) Document No. FUM00701 Document Name LH28F320BF series Appendix NOTE: 1. International customers should contact their local SHARP or distribution sales offices. Rev. 2.44 i A-1 RECOMMENDED OPERATING CONDITIONS A-1.1 At Device Power-Up AC timing illustrated in Figure A-1 is recommended for the supply voltages and the control signals at device power-up. If the timing in the figure is ignored, the device may not operate correctly. VCC(min) VCC GND tVR t2VPH tPHQV VIH RP# (P) (RST#) VCCW *1 (V) VIL VCCWH1/2 (VPPH1/2) GND (VPP) tR or tF tR or tF tAVQV VIH Valid Address ADDRESS (A) VIL tF tR tELQV VIH CE# (E) VIL VIH WE# (W) VIL tF tR tGLQV VIH OE# (G) VIL VIH WP# (S) VIL VOH DATA (D/Q) VOL High Z Valid Output *1 To prevent the unwanted writes, system designers should consider the design, which applies VCCW (VPP) to 0V during read operations and VCCWH1/2 (VPPH1/2) during write or erase operations. See the application note AP-007-SW-E for details. Figure A-1. AC Timing at Device Power-Up For the AC specifications tVR, tR, tF in the figure, refer to the next page. See the “ELECTRICAL SPECIFICATIONS“ described in specifications for the supply voltage range, the operating temperature and the AC specifications not shown in the next page. Rev. 1.10 ii A-1.1.1 Rise and Fall Time Symbol Parameter Notes Min. Max. Unit 1 0.5 30000 µs/V tVR VCC Rise Time tR Input Signal Rise Time 1, 2 1 µs/V tF Input Signal Fall Time 1, 2 1 µs/V NOTES: 1. Sampled, not 100% tested. 2. This specification is applied for not only the device power-up but also the normal operations. Rev. 1.10 iii A-1.2 Glitch Noises Do not input the glitch noises which are below VIH (Min.) or above VIL (Max.) on address, data, reset, and control signals, as shown in Figure A-2 (b). The acceptable glitch noises are illustrated in Figure A-2 (a). Input Signal Input Signal VIH (Min.) VIH (Min.) VIL (Max.) VIL (Max.) Input Signal Input Signal (a) Acceptable Glitch Noises (b) NOT Acceptable Glitch Noises Figure A-2. Waveform for Glitch Noises See the “DC CHARACTERISTICS“ described in specifications for VIH (Min.) and VIL (Max.). Rev. 1.10 iv A-2 RELATED DOCUMENT INFORMATION(1) Document No. Document Name AP-001-SD-E Flash Memory Family Software Drivers AP-006-PT-E Data Protection Method of SHARP Flash Memory AP-007-SW-E RP#, VPP Electric Potential Switching Circuit NOTE: 1. International customers should contact their local SHARP or distribution sales office. Rev. 1.10 v A-3 STATUS REGISTER READ OPERATIONS If AC timing for reading the status register described in specifications is not satisfied, a system processor can check the status register bit SR.15 instead of SR.7 to determine when the erase or program operation has been completed. Table A-3-1. Status Register Definition (SR.15 and SR.7) NOTES: SR.15 = WRITE STATE MACHINE STATUS: (DQ15) 1 = Ready in All Partitions 0 = Busy in Any Partition SR.15 indicates the status of WSM (Write State Machine). If SR.15="0", erase or program operation is in progress in any partition. SR.7 = WRITE STATE MACHINE STATUS FOR EACH PARTITION: (DQ 7) 1 = Ready in the Addressed Partition 0 = Busy in the Addressed Partition SR.7 indicates the status of the partition. If SR.7="0", erase or program operation is in progress in the addressed partition. Even if the SR.7 is "1", the WSM may be occupied by the other partition. Operation to Partition 2 Operation to Partition 0 Address (A) CE# (E) WE# (W) DQ15-0 (D/Q) VIH VIL VIH VALID ADDRESS within PARTITION 2 VALID ADDRESS within PARTITION 0 VIL VIH VIL VIH VIL VALID COMMAND VALID COMMAND tWHR0 (tEHR0) SR.15 (R) ( Partition 0 ) SR.7 (R) ( Partition 0 ) SR.15 (R) ( Partition 1 ) SR.7 (R) ( Partition 1 ) SR.15 (R) ( Partition 2 ) SR.7 (R) ( Partition 2 ) SR.15 (R) ( Partition 3 ) SR.7 (R) ( Partition 3 ) "1" "0" "1" "0" "1" "0" "1" "0" "1" tWHR0 (tEHR0) "0" "1" "0" "1" "0" "1" "0" PLANE0 PLANE1 PLANE2 PLANE3 PARTITION3 PARTITION2 PARTITION1 PARTITION0 Check SR.15 instead of SR.7 in Partition 0 Check SR.15 instead of SR.7 in Partition 2 Figure A-3-1. Example of Checking the Status Register (In this example, the device contains four partitions.) 021211