Kexin BZT55B10 Zener diode Datasheet

Diodes
SMD Type
Zener Diodes
BZT55B2V4 ~ BZT55B75
LL-34
Unit: mm
■ Features
● Very sharp reverse characteristic
● Low reverse current level
1.50
1.30
2.64REF
0.50
0.35
● Very high stability
● Low noise
3.60
3.30
CATHODE BAND
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Unit
VF
1.5
V
Zener current
IZ
Pv/Vz
mA
Power Dissipation @ RθJA≤300 ℃/W
PD
500
mW
RθJA
500
℃/W
Forward voltage @ IF=200mA
Thermal Resistance Junction to Ambient
Junction Temperature
Storage Temperature range
TJ
175
Tstg
-65 to 175
℃
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Diodes
SMD Type
Zener Diodes
BZT55B2V4 ~ BZT55B75
■ Electrical Characteristics Ta = 25℃
ZENER VOLTAGE
RANGE (1)
VZ at I ZT1
PART NUMBER
TEST
CURRENT
IZT1
V
BZT55B2V4
IZT2
REVERSE LEAKAGE
CURRENT
IR at V R
Tamb =
25 °C
mA
MIN.
NOM.
MAX.
2.35
2.4
2.45
5
1
< 50
Z Z at I ZT1
Tamb =
150 °C
µA
V
< 100
TEMPERATURE
COEFFICIENT
Z ZK at I ZT2
TK VZ
f = 1 kHz
1
Ω
%/K
MAX.
MAX.
MIN.
MAX.
< 85
< 600
- 0.09
- 0.06
- 0.06
BZT55B2V7
2.64
2.7
2.76
5
1
< 10
< 50
1
< 85
< 600
- 0.09
BZT55B3V0
2.94
3.0
3.06
5
1
<4
< 40
1
< 90
< 600
- 0.08
- 0.05
BZT55B3V3
3.24
3.3
3.36
5
1
<2
< 40
1
< 90
< 600
- 0.08
- 0.05
BZT55B3V6
3.52
3.6
3.68
5
1
<2
< 40
1
< 90
< 600
- 0.08
- 0.05
BZT55B3V9
3.82
3.9
3.98
5
1
<2
< 40
1
< 90
< 600
- 0.08
- 0.05
- 0.03
BZT55B4V3
4.22
4.3
4.38
5
1
<1
< 20
1
< 90
< 600
- 0.06
BZT55B4V7
4.6
4.7
4.8
5
1
< 0.5
< 10
1
< 80
< 600
- 0.05
0.02
BZT55B5V1
5
5.1
5.2
5
1
< 0.1
<2
1
< 60
< 550
- 0.02
0.02
0.05
BZT55B5V6
5.48
5.6
5.72
5
1
< 0.1
<2
1
< 40
< 450
- 0.05
BZT55B6V2
6.08
6.2
6.32
5
1
< 0.1
<2
2
< 10
< 200
0.03
0.06
BZT55B6V8
6.66
6.8
6.94
5
1
< 0.1
<2
3
<8
< 150
0.03
0.07
BZT55B7V5
7.35
7.5
7.65
5
1
< 0.1
<2
5
<7
< 50
0.03
0.07
BZT55B8V2
8.04
8.2
8.36
5
1
< 0.1
<2
6.2
<7
< 50
0.03
0.08
0.09
BZT55B9V1
8.92
9.1
9.28
5
1
< 0.1
<2
6.8
< 10
< 50
0.03
BZT55B10
9.8
10
10.2
5
1
< 0.1
<2
7.5
< 15
< 70
0.03
0.1
BZT55B11
10.78
11
11.22
5
1
< 0.1
<2
8.2
< 20
< 70
0.03
0.11
BZT55B12
11.76
12
12.24
5
1
< 0.1
<2
9.1
< 20
< 90
0.03
0.11
BZT55B13
12.74
13
13.26
5
1
< 0.1
<2
10
< 26
< 110
0.03
0.11
BZT55B15
14.7
15
15.3
5
1
< 0.1
<2
11
< 30
< 110
0.03
0.11
BZT55B16
15.7
16
16.3
5
1
< 0.1
<2
12
< 40
< 170
0.03
0.11
0.11
BZT55B18
17.64
18
18.36
5
1
< 0.1
<2
13
< 50
< 170
0.03
BZT55B20
19.6
20
20.4
5
1
< 0.1
<2
15
< 55
< 220
0.03
0.11
BZT55B22
21.55
22
22.45
5
1
< 0.1
<2
16
< 55
< 220
0.04
0.12
BZT55B24
23.5
24
24.5
5
1
< 0.1
<2
18
< 80
< 220
0.04
0.12
BZT55B27
26.4
27
27.6
5
1
< 0.1
<2
20
< 80
< 220
0.04
0.12
BZT55B30
29.4
30
30.6
5
1
< 0.1
<2
22
< 80
< 220
0.04
0.12
BZT55B33
32.4
33
33.6
5
1
< 0.1
<2
24
< 80
< 220
0.04
0.12
BZT55B36
35.3
36
36.7
5
1
< 0.1
<2
27
< 80
< 220
0.04
0.12
BZT55B39
38.2
39
39.8
2.5
1
< 0.1
<5
30
< 90
< 500
0.04
0.12
0.12
BZT55B43
42.1
43
43.9
2.5
0.5
< 0.1
<5
33
< 90
< 600
0.04
BZT55B47
46.1
47
47.9
2.5
0.5
< 0.1
<5
36
< 110
< 700
0.04
0.12
BZT55B51
50
51
52
2.5
0.5
< 0.1
< 10
39
< 125
< 700
0.04
0.12
BZT55B56
54.9
56
57.1
2.5
0.5
< 0.1
< 10
43
< 135
< 1000
0.04
0.12
BZT55B62
60.8
62
63.2
2.5
0.5
< 0.1
< 10
47
< 150
< 1000
0.04
0.12
BZT55B68
66.6
68
69.4
2.5
0.5
< 0.1
< 10
51
< 200
< 1000
0.04
0.12
BZT55B75
73.5
75
76.5
2.5
0.5
< 0.1
< 10
56
< 250
< 1500
0.04
0.12
Notes
• Additional measurement of volt age group 9V1 to 75 at 95 % V zmin.≤35 nA at T j 25 °C
(1) t ≤10 ms, T/t > 1000
p
p
2
DYNAMIC
RESISTANCE
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Diodes
SMD Type
Zener Diodes
BZT55B2V4 ~ BZT55B75
■ Typical Characterisitics
15
TKVZ - Temperature Coefficient
of VZ (10-4/K)
Ptot - Total Power Dissipation (mW)
600
500
400
300
200
100
0
5
IZ = 5 mA
0
- 5
0
200
80
120
160
40
Tamb - Ambient Temperature (°C)
Fig. 1 - Total Power Dissipation vs. Ambient Temperature
0
10
20
40
50
Fig. 4 - Temperature Coefficient of VZ vs. Z-Voltage
CD - Diode Capacitance (pF)
200
Tj = 25 °C
100
IZ = 5 mA
10
150
VR = 2 V
Tj = 25 °C
100
50
0
1
0
5
10
15
25
20
0
5
10
15
20
25
VZ - Z-Voltage (V)
VZ - Z-Voltage (V)
Fig. 2 - Typical Change of Working Voltage under Operating
Conditions at Tamb=25°C
Fig. 5 - Diode Capacitance vs. Z-Voltage
1.3
100
VZtn = VZt/VZ (25 °C)
1.2
TKVZ = 10 x 10 -4 /K
8 x 10-4 /K
6 x 10-4 /K
1.1
4 x 10-4 /K
2 x 10-4 /K
0
1.0
- 2 x 10 -4 /K
- 4 x 10 -4 /K
0.9
IF - Forward Current (mA)
VZtn - Relative Voltage Change
30
VZ - Z-Voltage (V)
1000
VZ - Voltage Change (mV)
10
10
Tj = 25 ° C
1
0.1
0.01
0.001
0.8
- 60
0
60
120
180
240
Tj - Junction Temperature (°C)
Fig. 3 - Typical Change of Working Voltage vs. Junction
Temperature
0
0.2
0.4
0.6
0.8
1.0
VF - Forward Voltage (V)
Fig. 6 - Forward Current vs. Forward Voltage
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Diodes
SMD Type
Zener Diodes
BZT55B2V4 ~ BZT55B75
■ Typical Characterisitics
1000
IZ - Z-Current (mA)
80
rZ - Differential Z-Resistance (Ω)
100
Ptot = 500 mW
Tamb = 25 °C
60
40
20
IZ = 1 mA
100
5 mA
10 10 mA
Tj = 25 °C
1
0
0
4
6
12
8
20
0
VZ - Z-Voltage (V)
5
10
15
Fig. 9 - Differential Z-Resistance vs. Z-Voltage
50
Ptot = 500 mW
Tamb = 25 °C
IZ - Z-Current (mA)
30
20
10
0
15
20
25
.35
30
VZ - Z-Voltage (V)
Zthp - Thermal Resistance for Pulse Cond. (KW)
Fig. 8 - Z-Current vs. Z-Voltage
1000
tp/T = 0.5
100
tp/T = 0.2
Single Pulse
10
T = Tjmax - Tamb
tp/T = 0.02
tp/T = 0.05
1
10 -1
iZM = (- V Z + (VZ2 + 4rzj x T/Zthp) 1/2)/(2rzj)
10 0
10 1
tp - Pulse Length (ms)
Fig. 10 - Thermal Response
4
RthJA = 300 K/W
tp/T = 0.01
tp/T = 0.1
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VZ - Z-Voltage (V)
Fig. 7 - Z-Current vs. Z-Voltage
40
20
10 2
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