ON NTB22N06 Nâ channel enhancementâ mode silicon gate Datasheet

NTP22N06, NTB22N06
Power MOSFET
22 Amps, 60 Volts
N−Channel TO−220 and D2PAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
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Typical Applications
•
•
•
•
22 AMPERES
60 VOLTS
RDS(on) = 60 mΩ
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
N−Channel
D
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
60
Vdc
Drain−to−Gate Voltage (RGS = 10 MΩ)
VDGR
60
Vdc
Rating
Gate−to−Source Voltage
− Continuous
− Non−Repetitive (tpv10 ms)
Drain Current
− Continuous @ TA = 25°C
− Continuous @ TA = 100°C
− Single Pulse (tpv10 μs)
Total Power Dissipation @ TA = 25°C
Derate above 25°C
Operating and Storage Temperature Range
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C
(VDD = 50 Vdc, VGS = 10 Vdc, L = 1.0 mH,
VDS = 60 Vdc, IL(pk) = 12 A, RG = 25 Ω)
Thermal Resistance
− Junction−to−Case
− Junction−to−Ambient
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
G
Vdc
VGS
VGS
"20
"30
ID
ID
22
10
66
Adc
PD
60
0.4
W
W/°C
TJ, Tstg
−55
to
+175
°C
72
mJ
IDM
EAS
RθJC
RθJA
2.5
62.5
TL
260
4
S
4
1
2
3
Apk
1
D2PAK
CASE 418B
STYLE 2
TO−220AB
CASE 221A
STYLE 5
2
3
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
4
Drain
°C/W
NTx22N06
LLYWW
NTx22N06
LLYWW
°C
1
Gate
3
Source
2
Drain
1
Gate
NTx22N06
x
LL
Y
WW
2
Drain
3
Source
= Device Code
= P or B
= Location Code
= Year
= Work Week
ORDERING INFORMATION
Device
© Semiconductor Components Industries, LLC, 2006
August, 2006 − Rev. 2
1
Package
Shipping
NTP22N06
TO−220AB
50 Units/Rail
NTB22N06
D2PAK
50 Units/Rail
NTB22N06T4
D2PAK
800/Tape & Reel
Publication Order Number:
NTP22N06/D
NTP22N06, NTB22N06
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
60
−
71
71
−
−
−
−
−
−
1.0
10
−
−
±100
nAdc
2.0
−
3.09
7.0
4.0
−
Vdc
mV/°C
−
52
60
−
−
1.2
1.11
1.6
−
gFS
−
12
−
mhos
Ciss
−
502
700
pF
Coss
−
160
225
Crss
−
46
65
td(on)
−
12
25
tr
−
39
80
td(off)
−
18
40
tf
−
34
70
QT
−
15.5
32
Q1
−
3.4
−
Q2
−
7.7
−
VSD
−
−
1.07
1.0
1.15
−
Vdc
trr
−
43
−
ns
ta
−
32
−
tb
−
11
−
QRR
−
0.071
−
OFF CHARACTERISTICS
V(BR)DSS
Drain−to−Source Breakdown Voltage (Note 1)
(VGS = 0 Vdc, ID = 250 μAdc)
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C)
IDSS
Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)
IGSS
Vdc
mV/°C
μAdc
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage (Note 1)
(VDS = VGS, ID = 250 μAdc)
Threshold Temperature Coefficient (Negative)
VGS(th)
Static Drain−to−Source On−Resistance (Note 1)
(VGS = 10 Vdc, ID = 11 Adc)
RDS(on)
Static Drain−to−Source On−Voltage (Note 1)
(VGS = 10 Vdc, ID = 22 Adc)
(VGS = 10 Vdc, ID = 11 Adc, TJ = 150°C)
VDS(on)
Forward Transconductance (Note 1) (VDS = 7.0 Vdc, ID = 11 Adc)
mΩ
Vdc
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 2)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
(VDD = 30 Vdc, ID = 22 Adc,
VGS = 10 Vdc, RG = 9.1 Ω) (Note 1)
Fall Time
Gate Charge
(VDS = 48 Vdc, ID = 22 Adc,
VGS = 10 Vdc) (Note 1)
ns
nC
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
(IS = 22 Adc, VGS = 0 Vdc) (Note 1)
(IS = 22 Adc, VGS = 0 Vdc, TJ = 150°C)
Reverse Recovery Time
(IS = 22 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/μs) (Note 1)
Reverse Recovery Stored Charge
1. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperatures.
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2
μC
NTP22N06, NTB22N06
50
40
40
8V
9V
ID, DRAIN CURRENT (AMPS)
ID, DRAIN CURRENT (AMPS)
VGS = 10 V
7.5 V
7V
30
6.5 V
20
6V
5.5 V
10
0
5V
0
4
5
6
7
2
3
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
1
30
20
TJ = 25°C
10
TJ = 100°C
0
8
VDS ≥ 10 V
2
3
4
5
6
7
8
9
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
0.12
TJ = 100°C
0.10
0.08
TJ = 25°C
0.06
0.04
TJ = −55°C
0.02
0
0
20
10
30
40
50
0.16
VGS = 15 V
0.14
0.12
0.10
TJ = 100°C
0.08
TJ = 25°C
0.06
0.04
TJ = −55°C
0.02
0
0
20
10
30
40
ID, DRAIN CURRENT (AMPS)
ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance versus
Gate−to−Source Voltage
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
10000
2
ID = 11 A
VGS = 10 V
IDSS, LEAKAGE (nA)
1.8
10
Figure 2. Transfer Characteristics
RDS(on), DRAIN−TO−SOURCE RESISTANCE (Ω)
VGS = 10 V
0.14
RDS(on), DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (Ω)
Figure 1. On−Region Characteristics
0.16
TJ = −55°C
1.6
1.4
1.2
1
50
VGS = 0 V
TJ = 150°C
1000
100
TJ = 100°C
10
0.8
0.6
−50 −25
0
25
50
75
100
125
150
175
1
0
10
20
30
40
50
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
versus Voltage
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3
60
1600
VGS = 0 V
VDS = 0 V
TJ = 25°C
C, CAPACITANCE (pF)
1400
Ciss
1200
1000
Crss
800
Ciss
600
400
Coss
200
Crss
0
10
5 VGS 0 VDS 5
10
15
20
25
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
NTP22N06, NTB22N06
12
QT
10
VGS
8
Q1
6
4
2
ID = 22 A
TJ = 25°C
0
0
4
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE
(VOLTS)
1
tr
td(off)
td(on)
1
10
VGS = 0 V
TJ = 25°C
20
16
12
8
4
0
0.6
100
RG, GATE RESISTANCE (Ω)
dc
10
10 ms
1 ms
100 μs
1
10 μs
RDS(on) Limit
Thermal Limit
Package Limit
0.1
0.1
1
0.76
0.84
1
0.92
1.08
1.16
10
100
Figure 10. Diode Forward Voltage versus
Current
EAS, SINGLE PULSE DRAIN−TO−SOURCE
AVALANCHE ENERGY (mJ)
ID, DRAIN CURRENT (AMPS)
VGS = 20 V
SINGLE PULSE
TC = 25°C
0.68
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
100
20
16
Figure 8. Gate−to−Source and
Drain−to−Source Voltage versus Total Charge
IS, SOURCE CURRENT (AMPS)
t, TIME (ns)
100
10
12
24
VDS = 30 V
ID = 22 A
VGS = 10 V
tf
8
Qg, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
1000
Q2
80
ID = 12 A
60
40
20
0
25
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
50
75
100
125
150
175
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
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4
r(t). EFFECTIVE TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
NTP22N06, NTB22N06
1.0
D = 0.5
0.2
0.1
0.1
0.05
P(pk)
0.01
t1
0.02
t2
DUTY CYCLE, D = t1/t2
SINGLE PULSE
0.01
0.00001
0.0001
0.001
0.01
t, TIME (μs)
RθJC(t) = r(t) RθJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TC = P(pk) RθJC(t)
0.1
Figure 13. Thermal Response
di/dt
IS
trr
ta
tb
TIME
0.25 IS
tp
IS
Figure 14. Diode Reverse Recovery Waveform
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5
1
10
NTP22N06, NTB22N06
PACKAGE DIMENSIONS
TO−220 THREE−LEAD
TO−220AB
CASE 221A−09
ISSUE AA
SEATING
PLANE
−T−
B
F
C
T
S
4
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
A
Q
1 2 3
U
H
K
Z
L
R
V
J
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
G
D
N
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.018
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
−−−
−−−
0.080
STYLE 5:
PIN 1.
2.
3.
4.
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.46
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
−−−
−−−
2.04
GATE
DRAIN
SOURCE
DRAIN
D2PAK
CASE 418B−03
ISSUE D
C
E
−B−
V
4
1
2
A
S
3
−T−
SEATING
PLANE
K
J
G
D
H
3 PL
0.13 (0.005)
M
T B
M
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
DIM
A
B
C
D
E
G
H
J
K
S
V
INCHES
MIN
MAX
0.340
0.380
0.380
0.405
0.160
0.190
0.020
0.035
0.045
0.055
0.100 BSC
0.080
0.110
0.018
0.025
0.090
0.110
0.575
0.625
0.045
0.055
STYLE 2:
PIN 1.
2.
3.
4.
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6
GATE
DRAIN
SOURCE
DRAIN
MILLIMETERS
MIN
MAX
8.64
9.65
9.65
10.29
4.06
4.83
0.51
0.89
1.14
1.40
2.54 BSC
2.03
2.79
0.46
0.64
2.29
2.79
14.60
15.88
1.14
1.40
NTP22N06, NTB22N06
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
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NTP22N06/D
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