FB-5VS32 Chip Bi-directional TVS diode 2 1 Mechanical Data Notes Dice size AX=AY=380um/BX=BY=180um Wafer size 4” (Gross die:45,620pcs/Good die>42,427pcs) Chip Thickness 230um±20um Scribe line width 60um Top metal Al/Au/Ag Back side metal Al/Au/Ag/Sn Parameter Reverse stand-off voltage Peak pulse power Peak pulse current Electrostatic discharge Max.junction temp. Symbol VRWM PPP IPP VESD Conditions Value Unit 5 140* 10* V W A Tp=8/20us Tp=8/20us IEC61000-4-2 ± 8(Contact) Level 4 ±15(Air) Tj KV °C 150 Characteristics TA=25℃ Parameter Symbol Condition Min. VBR IT=1mA 5.6 Reverse leakage current IR Clamping Voltage Diode capacitance Breakdown voltage Typ. Max. Unit 9.4 V V=± 5V 0.09 uA VC IPP=1.0A IPP=10A 12.0* 14.0* V Cj VR=0V f=1MHZ 20.0 pf 15.0 Notes: (1)sampling testing:no bad dice inking/guaranteed good die >93% (2)Testing follow customer (3)Tj=Ta+Rth(j-a)*(pf+pr),where Rth(j-a)-thermal resistance,Pf-forward power dissipation, Pr-revers power dissipation (4)**For device testing EW1608C2-FW-A Futurewafer Technology Co.,Ltd www.futurewafer.com.tw+886-3-3573583