Hanbit HMD16M32M8G-6 64mbyte(16mx32) 72-pin fp mode 4k ref. simm design 5v Datasheet

HANBit
HMD16M32M8G
64Mbyte(16Mx32) 72-pin FP Mode 4K Ref. SIMM Design 5V
Part No. HMD16M32M8G
GENERAL DESCRIPTION
The HMD16M32M8G is a 16Mbit x 32 dynamic RAM high-density memory module. The module consists of eight CMOS
16M x 4bit DRAMs in 32-pin TSOPII packages mounted on a 72-pin, double-sided, FR-4-printed circuit board. A 0.1uF
decoupling capacitor is mounted on the printed circuit board for each DRAM components. The module is a Single In-line
Memory Module with edge connections and is intended for mounting in to 72-pin edge connector sockets. All module
components may be powered from a single 5V DC power supply and all inputs and outputs are TTL-compatible.
PIN ASSIGNMENT
FEATURES
PIN
SYMBOL
PIN
SYMBOL
PIN
SYMBOL
PIN
SYMBOL
wHMD16M32M8G:
1
Vss
19
A10
37
NC
55
DQ11
4K Cycles/64ms Refresh Gold
2
DQ0
20
DQ4
38
NC
56
DQ27
w Access times : 50, 60ns
3
DQ16
21
DQ20
39
Vss
57
DQ12
w High-density 64MByte design
4
DQ1
22
DQ5
40
/CAS0
58
DQ28
w Single + 5V ±0.5V power supply
5
DQ17
23
DQ21
41
/CAS2
59
Vcc
w JEDEC standard pinout
6
DQ2
24
DQ6
42
/CAS3
60
DQ29
w FP(Fast Page) mode operation
7
DQ18
25
DQ22
43
/CAS1
61
DQ13
w TTL compatible inputs and outputs
8
DQ3
26
DQ7
44
/RAS0
62
DQ30
w FR4-PCB design
9
DQ19
27
DQ23
45
NC
63
DQ14
10
Vcc
28
A7
46
NC
64
DQ31
11
NC
29
A11
47
/W
65
DQ15
12
A0
30
Vcc
48
NC
66
NC
13
A1
31
A8
49
DQ8
67
PD1
14
A2
32
A9
50
DQ24
68
PD2
15
A3
33
NC
51
DQ9
69
PD3
16
A4
34
/RAS2
52
DQ25
70
PD4
17
A5
35
NC
53
DQ10
71
NC
18
A6
36
NC
54
DQ26
72
Vss
OPTIONS
MARKING
w Timing
50ns access
60ns access
-5
-6
w Packages
72-pin SIMM
M
PERFORMANCE RANGE
SPEED
tRAC
tCAC
tRC
-5
50ns
13ns
90ns
-6
60ns
15ns
110ns
wPART IDENTIFICATION
PRESENCE
DETECT PINS
50ns
60ns
PD1
Vss
Vss
PD2
NC
NC
PD3
Vss
NC
PD4
Vss
NC
URL: www.hbe.co.kr
REV. 1.0 (August. 2002)
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HANBit Electronics Co.,Ltd.
HANBit
HMD16M32M8G
FUNCTIONAL BLOCK DIAGRAM
/CAS0
/RAS0
U0
CAS
RAS
OE
W
A0-A11
U1
CAS
RAS
OE
W
/CAS1
A0-A11
U2
CAS
RAS
OE
W
A0-A11
U3
CAS
RAS
OE
W
/CAS2
/RAS2
A0-A11
U4
CAS
RAS
OE
W
A0-A11
U5
CAS
RAS
OE
W
/CAS3
A0-A11
U6
CAS
RAS
OE
W
A0-A11
U7
CAS
RAS
OE
W
A0-A11
DQ0
DQ1
DQ2
DQ3
DQ0-DQ3
DQ0
DQ1
DQ2
DQ3
DQ4-DQ7
DQ0
DQ1
DQ2
DQ3
DQ8-DQ11
DQ0
DQ1
DQ2
DQ3
DQ12-DQ15
DQ0
DQ1
DQ2
DQ3
DQ16-DQ19
DQ0
DQ1
DQ2
DQ3
DQ20-DQ23
DQ0
DQ1
DQ2
DQ3
DQ24-DQ27
DQ0
DQ1
DQ2
DQ3
DQ28-DQ31
/W
A0-A11
Vcc
0.1uF or 0.22uF Capacitor
for each DRAM
To all DRAMs
Vss
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REV. 1.0 (August. 2002)
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HMD16M32M8G
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATING
VIN ,OUT
-1V to 7.0V
Voltage on Vcc Supply Relative to Vss
Vcc
-1V to 7.0V
Power Dissipation
PD
6W
TSTG
-55oC to 150oC
Voltage on Any Pin Relative to Vss
Storage Temperature
Short Circuit Output Current
IOS
50mA
w Permanent device damage may occur if " Absolute Maximum Ratings" are exceeded. Functional operation should be
restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
RECOMMENDED DC OPERATING CONDITIONS
( Voltage reference to VSS, TA=0 to 70 o C )
PARAMETER
SYMBOL
MIN
TYP.
MAX
UNIT
Supply Voltage
Vcc
4.5
5.0
5.5
V
Ground
Vss
0
0
0
V
Input High Voltage
VIH
2.4
-
Vcc+1
V
Input Low Voltage
VIL
-1.0
-
0.8
V
DC AND OPERATING CHARACTERISTICS
SYMBOL
SPEED
MIN
MAX
UNITS
-5
-
880
MA
-6
-
800
MA
-
16
MA
-5
-
880
MA
-6
-
800
MA
-5
-
720
MA
-6
-
560
MA
-
8
MA
-5
-
880
MA
-6
-
800
MA
Il(L)
-60
5
µA
IO(L)
-5
5
µA
ICC1
ICC2
ICC3
ICC4
ICC5
ICC6
VOH
2.4
-
V
VOL
-
0.4
V
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HMD16M32M8G
ICC1 : Operating Current * (/RAS , /CAS , Address cycling @t RC=min.)
ICC2 : Standby Current ( /RAS=/CAS=VIH )
ICC3 : /RAS Only Refresh Current * ( /CAS=V IH, /RAS, Address cycling @tRC=min )
ICC4 : Fast Page Mode Current * (/RAS=VIL, /CAS, Address cycling @tPC=min )
ICC5 : Standby Current (/RAS=/CAS=Vcc-0.2V )
ICC6 : /CAS-Before-/RAS Refresh Current * (/RAS and /CAS cycling @t RC=min )
IIL : Input Leakage Current (Any input 0V ≤ VIN ≤ 6.5V, all other pins not under test = 0V)
IOL : Output Leakage Current (Data out is disabled, 0V ≤ VOUT ≤ 5.5V
VOH : Output High Voltage Level (IOH= -5mA )
VOL : Output Low Voltage Level (IOL = 4.2mA )
* NOTE: ICC1, ICC3, ICC4 and ICC6 are dependent on output loading and cycle rates. Specified values are obtained with the
output open. ICC is specified as an average current. In ICC1 and ICC3, address cad be changed maximum once
while /RAS=VIL. In ICC4, address can be changed maximum once within one page mode cycle.
o
CAPACITANCE
( TA=25 C, Vcc = 5V, f = 1Mz )
DESCRIPTION
SYMBOL
MIN
MAX
UNITS
Input Capacitance (A0-A11)
CIN1
-
40
pF
Input Capacitance (/W)
C IN2
-
56
pF
Input Capacitance (/RAS0)
CIN3
-
58
pF
Input Capacitance (/CAS0-/CAS3)
CIN4
-
54
pF
Input/Output Capacitance (DQ0-31)
CDQ1
-
57
pF
AC CHARACTERISTICS
o
( 0 C ≤ TA ≤ 70oC , Vcc = 5V±10%, See notes 1,2.)
-5
PARAMETER
-6
SYMBOL
UNIT
MIN
MAX
MAX
Random read or write cycle time
tRC
Access time from /RAS
tRAC
50
60
ns
Access time from /CAS
tCAC
13
15
ns
Access time from column address
tAA
25
30
ns
/CAS to output in Low-Z
tCLZ
0
Output buffer turn-off delay
tOFF
0
13
0
15
ns
Transition time (rise and fall)
tT
3
50
3
50
ns
/RAS precharge time
tRP
30
/RAS pulse width
tRAS
50
/RAS hold time
tRSH
13
15
ns
/CAS hold time
tCSH
50
60
ns
/CAS pulse width
tCAS
13
10K
15
10K
ns
/RAS to /CAS delay time
tRCD
20
37
20
45
ns
/RAS to column address delay time
tRAD
15
25
15
30
ns
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REV. 1.0 (August. 2002)
4
90
MIN
110
ns
0
ns
40
10K
60
ns
10K
ns
HANBit Electronics Co.,Ltd.
HANBit
HMD16M32M8G
/CAS to /RAS precharge time
tCRP
5
5
ns
Row address set-up time
tASR
0
0
ns
Row address hold time
tRAH
10
10
ns
Column address set-up time
tASC
0
0
ns
Column address hold time
tCAH
10
10
ns
Column address hold referenced to /RAS
tAR
50
55
ns
Column Address to /RAS lead time
tRAL
25
30
ns
Read command set-up time
tRCS
0
0
ns
Read command hold referenced to /CAS
tRCH
0
0
ns
Read command hold referenced to /RAS
tRRH
0
0
ns
Write command hold time
tWCH
10
10
ns
Write command hold referenced to /RAS
tWCR
50
55
ns
Write command pulse width
tWP
10
10
ns
Write command to /RAS lead time
tRWL
13
15
ns
Write command to /CAS lead time
tCWL
13
15
ns
Data-in set-up time
tDS
0
0
ns
Data-in hold time
tDH
10
10
ns
Data-in hold referenced to /RAS
tDHR
50
55
ns
Refresh period
tREF
Write command set-up time
tWCS
0
0
ns
/CAS setup time (C-B-R refresh)
tCSR
10
10
ns
/CAS hold time (C-B-R refresh)
tCHR
15
15
ns
/RAS precharge to /CAS hold time
tRPC
5
5
ns
Access time from /CAS precharge
tCPA
Fast page mode cycle time
tPC
40
45
ns
/CAS precharge time (Fast page)
tCP
10
10
ns
/RAS pulse width (Fast page )
tRASP
60
/W to /RAS precharge time (C-B-R refresh)
tWRP
10
10
ns
/W to /RAS hold time (C-B-R refresh)
tWRH
10
10
ns
/CAS precharge(C-B-R counter test)
tCPT
20
30
ns
16
16
35
100K
40
70
100K
ns
ns
ns
NOTES
1.An initial pause of 200µs is required after power-up followed by any 8 /RAS-only or /CAS-before-/RAS refresh cycles
before proper device operation is achieved.
2.VIH (min) and VIL (max) are reference levels for measuring timing of input signals. Transition times are measured between
VIH(min) and VIL(max) and are assumed to be 5ns for all inputs.
3.Measured with a load equivalent to 1TTL loads and 100pF
4.Operation within the tRCD(max) limit insures that tRAC(max) can be met. tRCD(max) is specified as a reference point only. If tRCD
is greater than the specified tRCD(max) limit, then access time is controlled exclusively by t CAC.
5.Assumes that tRCD ≥ tRCD(max)
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HMD16M32M8G
6. tAR, tWCR, tDHR are referenced to tRAD(max)
7.This parameter defines the time at which the output achieves the open circuit condition and is not referenced to V OH
or VOL.
8. tWCS, tRWD, tCWD and tAWD are non restrictive operating parameter.
They are included in the data sheet as electrical characteristic only. If t WCS ≥ tWCS(min) the cycle is an early write
cycle and the data out pin will remain high impedance for the duration of the cycle.
9. Either tRCH or tRRH must be satisfied for a read cycle.
10. These parameters are referenced to the /CAS leading edge in early write cycles and to the /W leading edge in readwrite cycles.
11. Operation within the tRAD(max) limit insures that tRAC(max) can be met. tRAD(max) is specified as a reference
point only. If tRAD is greater than the specified tRAD(max) limit. then access time is controlled by tAA.
Timing Diagrams
TIMING WAVEFORM OF READ CYCLE
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HMD16M32M8G
TIMING WAVEFORM OF WRITE CYCLE (EARLY WRITE)
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REV. 1.0 (August. 2002)
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HMD16M32M8G
WRITE CYCLE (/OE CONTROLLED WRITE) Note: Dout=open
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HMD16M32M8G
/CAS-BEFORE-/RAS REFRESH COUNTER TEST CYCLE
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REV. 1.0 (August. 2002)
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HMD16M32M8G
PACKAGING INFORMATION
SIMM Design
107.95 mm
3.38 mm
R 1.57 mm
101.19
3.18mmDIA
0.51mm
20.00 mm
10.16 mm
6.35
1
72
2.03
6.35 mm
1.02 mm
6.35 mm
1.27 mm
3.34 mm
95.25 mm
2.54 mm
0.25mm
MIN
1.27±10%
Gold : 1.04±0.10 mm
Solder:0.914±0.10mm
1.27
ORDERING INFORMATION
Part Number
Density
Org.
Package
HMD16M32M8G-5
64Byte
x 32
72 Pin-SIMM
HMD16M32M8G-6
64Byte
x 32
72 Pin-SIMM
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REV. 1.0 (August. 2002)
10
Component
Vcc
MODE
SPEED
8EA
5V
FPM
50ns
8EA
5V
FPM
60ns
Number
HANBit Electronics Co.,Ltd.
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