IL211AT/ 212AT/ 213AT Vishay Semiconductors Optocoupler, Phototransistor Output, With Base Connection in SOIC-8 package Features • Isolation Voltage, 3000 VRMS • Industry Standard SOIC-8A Surface Mountable Package • Compatible with Dual Wave, Vapor Phase and IR Reflow Soldering • Lead-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC A 1 8 NC K 2 7 B NC 3 6 C NC 4 5 E e3 i179002 Agency Approvals • UL1577, File No. E52744 System Code Y • DIN EN 60747-5-2 (VDE0884) DIN EN 60747-5-5 pending Available with Option 1 Pb Pb-free In addition to eliminating through-holes requirements, this package conforms to standards for surface mounted devices. A choice of 20, 50, and 100 % minimum CTR at IF = 10 mA makes these optocouplers suitable for a variety of different applications. Description The IL211AT/ IL212AT/ IL213AT are optically coupled pairs with a Gallium Arsenide infrared LED and silicon NPN phototransistor. Signal information, including a DC level, can be transmitted by the device while maintaining a high degree of electrical isolation between input and output. The IL211AT/ IL212AT/ IL213AT comes in a standard SOIC-8 small outline package for surface mounting which makes it ideally suited for high density applications with limited space. Order Information Part Remarks IL211AT CTR > 20 %, SOIC-8 IL212AT CTR > 50 %, SOIC-8 IL213AT CTR > 100 %, SOIC-8 Available only on Tape and Reel Option (Conforms to EIA Standard RS481A) For additional information on the available options refer to Option Information. Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability. Input Parameter Peak reverse voltage Forward continuous current Power dissipation Derate linearly from 25 ° Document Number 83615 Rev. 1.5, 26-Oct-04 Test condition Symbol Value Unit VR 6.0 V IF 60 mA Pdiss 90 mW 1.2 mW/°C www.vishay.com 1 IL211AT/ 212AT/ 213AT Vishay Semiconductors Output Symbol Value Unit Collector-emitter breakdown voltage Parameter Test condition BVCEO 30 V Emitter-collector breakdown voltage BVECO 7.0 V Collector-base breakdown voltage VCEO 70 V ICMAX DC 50 mA ICMAX 100 mA Pdiss 150 mW 2.0 mW/°C Symbol Value Unit Ptot 240 mW 3.2 mW/°C Storage temperature Tstg - 55 to +150 °C Operating temperature Tamb - 55 to +100 °C 10 sec. ICMAX DC ICMAX t < 1.0 ms Power dissipation Derate linearly from 25 °C Coupler Parameter Total package dissipation Test condition (LED + Detector) Derate linearly from 25 °C Soldering time at 260 °C Electrical Characteristics Tamb = 25 °C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Input Parameter Test condition Typ. Max Unit VF 1.3 1.5 V VR = 6.0 V IR 0.1 100 µA VR = 0 CO 13 Forward voltage IF = 10 mA Reverse current Capacitance Symbol Min pF Output Symbol Min Collector-emitter breakdown voltage Parameter IC = 10 µA Test condition BVCEO 30 Typ. Max V Emitter-collector breakdown voltage IE = 10 µA BVECO 7.0 V Collector dark current VCE = 10 V ICEO 5.0 Collector-emitter capacitance VCE = 0 CCE 10 50 Unit nA pF Coupler Parameter Test condition Saturation voltage, collector-emitter IF = 10 mA Isolation test voltage 1 sec. Symbol Min Typ. VCEsat VISO 0.5 Resistance input to output RIO 100 www.vishay.com 2 BVCEO V VRMS CIO IC = 10 µA Unit 0.4 3000 Capacitance (input-output) Collector-emitter breakdown voltage Max 30 50 pF GΩ V Document Number 83615 Rev. 1.5, 26-Oct-04 IL211AT/ 212AT/ 213AT Vishay Semiconductors Current Transfer Ratio Parameter Test condition IF = 10 mA, VCE = 5.0 V Current Transfer Ratio Part Symbol Min Typ. IL211AT CTR 20 50 Max Unit % IL212AT CTR 50 80 % IL213AT CTR 100 130 % Switching Characteristics Parameter Switching time Test condition Symbol IC = 2 mA, RL = 100 Ω, VCC = 10 V ton, toff Min Typ. Max Unit µs 3.0 Typical Characteristics (Tamb = 25 °C unless otherwise specified) Ta = -55°C 1.2 Ta = 25°C 1.1 1.0 0.9 Ta = 100°C 0.8 0.7 .1 150 ICE- Collector-emitter Current - mA VF - Forward Voltage - V 1.4 1.3 1 10 IF - Forward Current - mA VCE= 10 V 100 50 VCE= 0.4 V 0.1 100 iil211at_01 1 10 IF - LED Current - mA iil211at_03 Figure 1. Forward Voltage vs. Forward Current 1.5 100 Normalized to: VCE =10 V IF =10 mA TA =25°C VCE= 5 V 1.0 0.5 100 Figure 3. Collector-Emitter Current vs.LED Current NICB - Normalized I CB NCTRCE - Normalized - CTRCE TA = 25°C ı Normalized to: VCB = 9.3 V IF =1 mA TA = 25°ıC 10 1 VCE= 0.4 V 0.0 .1 iil211at_02 10 1 IF - LED Current - mA Figure 2. Normalized Non-saturated and Saturated CTRCE vs. LED Current Document Number 83615 Rev. 1.5, 26-Oct-04 .1 .1 100 iil211at_04 1 10 IF - LED Current - mA 100 Figure 4. Normalized Collector-Base Photocurrent vs. LED Current www.vishay.com 3 IL211AT/ 212AT/ 213AT Vishay Semiconductors 2.0 Normalized to: VCB = 9.3 V IF =10 mA TA = 25°C 1 .1 .01 .1 1 10 IF - LED Current - mA iil211at_05 ICB- Collector-base Current - µA 100 Input: IF =10 mA Pulse width = 100 mS Duty cycle = 50% 1000 5 TON 1.0 100 10K Figure 6. Collector-Base Photocurrent vs. LED Current 10 4 500 Switching time (µS) VCE = 10 V 101 Typical 10 0 40 60 80 Figure 7. Collector-Emitter Leakage Current vs.Temp. 1M Input: IF =10 mA Pulse width = 100 mS Duty cycle = 50% FF TO 50 10 TON 5 1 100 TA - Ambient Temperature - °C 500K 100 10 -1 20 100K Figure 9. Typical Switching Characteristics vs. Base Resistance (Saturated Operation) 1000 10 2 50K Base-emitter resistance, RBE (Ω) 10 5 10 3 F T OF 10 iil211at_09 www.vishay.com 10 Ib - Base Current - µA Figure 8. Normalized Saturated HFE vs. Base Current and Temperature Switching time (µs) 1 10 IF - LED Current - mA iil211at_06 ICEO - Collector-emitter - nA Vce = 0.4 V 0.5 1 .1 4 Ta = 25°C 1.0 50 1 iil211at_07 Vce = 10 V 100 10 0 Ib = 20 µA 25°C iil211at_08 100 10-2 -20 Normalized to: 0.0 TA = 25°C VCB = 9.3 V .1 1.5 100 Figure 5. Normalized Collector-Base Photocurrent vs. LED Current 1000 70°C 50°C NHFE(sat) - Normalized Saturated HFE NICB - Normalized ICB 10 0.1 iil211at_10 0.5 1 5 10 50 100 Load resistance RL (KΩ) Figure 10. Typical Switching Times vs. Load Resistance Document Number 83615 Rev. 1.5, 26-Oct-04 IL211AT/ 212AT/ 213AT Vishay Semiconductors INPUT 0 VCC=5 V toff ton tpdoff tpdon Input RL V OUT td OUTPUT tr 0 tr ts 10% 10% 50% 50% 90% 90% iil211at_11 Figure 11. Switching Test Circuit Package Dimensions in Inches (mm) R .010 (.13) .120± .005 (3.05± .13) .240 (6.10) .154± .005 CL (3.91± .13) .050 (1.27) .014 (.36) .036 (.91) .170 (4.32) .260 (6.6) .016 (.41) Pin One ID .192± .005 (4.88± .13) .004 (.10) .008 (.20) .015± .002 (.38± .05) 40° .008 (.20) 5° max. ISO Method A .050 (1.27) typ. .021 (.53) .020± .004 (.51± .10) 2 plcs. R.010 (.25) max. .045 (1.14) 7° .058± .005 (1.49± .13) .125± .005 (3.18± .13) Lead Coplanarity ±.0015 (.04) max. i178003 Document Number 83615 Rev. 1.5, 26-Oct-04 www.vishay.com 5 IL211AT/ 212AT/ 213AT Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 www.vishay.com 6 Document Number 83615 Rev. 1.5, 26-Oct-04