MCR08B, MCR08M Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors PNPN devices designed for line powered consumer applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection circuits. Supplied in surface mount package for use in automated manufacturing. • Sensitive Gate Trigger Current • Blocking Voltage to 600 Volts • Glass Passivated Surface for Reliability and Uniformity • Surface Mount Package • Device Marking: MCR08BT1: CR08B; MCR08MT1: CR08M, and Date Code http://onsemi.com SCRs 0.8 AMPERES RMS 200 thru 600 VOLTS G A K MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Peak Repetitive Off–State Voltage(1) (Sine Wave, RGK = 1000 Ω, TJ = 25 to 110°C) MCR08BT1 MCR08MT1 VDRM, VRRM On-State Current RMS (All Conduction Angles; TC = 80°C) IT(RMS) 0.8 Amps ITSM 8.0 Amps Peak Non-repetitive Surge Current (1/2 Cycle Sine Wave, 60 Hz, TC = 25°C) Circuit Fusing Considerations (t = 8.3 ms) Value Unit 1 200 600 I2t A2s 0.4 Forward Peak Gate Power (TC = 80°C, t = 1.0 µs) PGM 0.1 Watts Average Gate Power (TC = 80°C, t = 8.3 ms) PG(AV) 0.01 Watts Operating Junction Temperature Range Storage Temperature Range May, 2000 – Rev. 3 2 3 SOT–223 CASE 318E STYLE 10 PIN ASSIGNMENT 1 Cathode 2 Anode 3 Gate 4 Anode ORDERING INFORMATION TJ – 40 to +110 °C Tstg – 40 to +150 °C (1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant source such that the voltage ratings of the devices are exceeded. Semiconductor Components Industries, LLC, 2000 4 Volts 1 Device Package Shipping MCR08BT1 SOT223 16mm Tape and Reel (1K/Reel) MCR08MT1 SOT223 16mm Tape and Reel (1K/Reel) Preferred devices are recommended choices for future use and best overall value. Publication Order Number: MCR08BT1/D MCR08B, MCR08M THERMAL CHARACTERISTICS Symbol Value Unit Thermal Resistance, Junction to Ambient PCB Mounted per Figure 1 Characteristic RθJA 156 °C/W Thermal Resistance, Junction to Tab Measured on Anode Tab Adjacent to Epoxy RθJT 25 °C/W TL 260 °C Maximum Device Temperature for Soldering Purposes (for 10 Seconds Maximum) ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Symbol Characteristic Min Typ Max Unit — — — — 10 200 µA µA OFF CHARACTERISTICS Peak Repetitive Forward or Reverse Blocking Current(2) (VAK = Rated VDRM or VRRM, RGK = 1000 Ω) IDRM, IRRM TJ = 25°C TJ = 110°C ON CHARACTERISTICS Peak Forward On-State Voltage(1) (IT = 1.0 A Peak) VTM — — 1.7 Volts Gate Trigger Current (Continuous dc)(3) (VAK = 12 Vdc, RL = 100 Ω) Holding Current(3) (VAK = 12 Vdc, Initiating Current = 20 mA) IGT — — 200 µA IH — — 5.0 mA Gate Trigger Voltage (Continuous dc)(3) (VAK = 12 Vdc, RL = 100 Ω) VGT — — 0.8 Volts dv/dt 10 — — V/µs DYNAMIC CHARACTERISTICS Critical Rate-of-Rise of Off State Voltage (Vpk = Rated VDRM, TC = 110°C, RGK = 1000 Ω, Exponential Method) (1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. (2) RGK = 1000 Ω is included in measurement. (3) RGK is not included in measurement. http://onsemi.com 2 MCR08B, MCR08M Voltage Current Characteristic of SCR + Current Symbol Parameter VDRM IDRM Peak Repetitive Off State Forward Voltage VRRM IRRM Peak Repetitive Off State Reverse Voltage VTM IH Anode + VTM on state Peak Forward Blocking Current IRRM at VRRM IH Peak Reverse Blocking Current Peak On State Voltage Holding Current Reverse Blocking Region (off state) Reverse Avalanche Region + Voltage IDRM at VDRM Forward Blocking Region (off state) Anode – 0.15 3.8 0.079 2.0 0.091 0.091 2.3 2.3 0.244 6.2 0.079 2.0 0.984 25.0 0.059 0.059 0.059 1.5 1.5 1.5 0.096 2.44 0.096 2.44 0.059 1.5 ǒinchesǓ mm BOARD MOUNTED VERTICALLY IN CINCH 8840 EDGE CONNECTOR. BOARD THICKNESS = 65 MIL., FOIL THICKNESS = 2.5 MIL. MATERIAL: G10 FIBERGLASS BASE EPOXY 0.096 2.44 0.059 1.5 0.472 12.0 Figure 1. PCB for Thermal Impedance and Power Testing of SOT-223 http://onsemi.com 3 10 1.0 0.1 TYPICAL AT TJ = 110°C MAX AT TJ = 110°C MAX AT TJ = 25°C 0.01 2.0 1.0 0 3.0 R θJA , JUNCTION TO AMBIENT THERMAL RESISTANCE, ( °C/W) IT, INSTANTANEOUS ON-STATE CURRENT (AMPS) MCR08B, MCR08M 4.0 160 150 140 130 120 110 100 90 80 70 60 50 40 30 DEVICE MOUNTED ON FIGURE 1 AREA = L2 PCB WITH TAB AREA AS SHOWN MINIMUM FOOTPRINT = 0.076 cm2 0 1.0 2.0 3.0 110 110 100 100 α α = CONDUCTION ANGLE 80 dc 70 180° 60 120° 50 α = 30° 40 60° 90° 0 0.1 0.2 180° 120° 70 α = 30° 60 60° 50 40 90° α CONDUCTION ANGLE 0 0.1 0.2 0.3 0.4 0.5 180° 120° 60° 70 90° α 180° 120° α = 30° 60° 90° α α = CONDUCTION α = CONDUCTION ANGLE ANGLE 0.1 50 OR 60 Hz HALFWAVE dc T(tab) , MAXIMUM ALLOWABLE TAB TEMPERATURE ( ° C) T A , MAXIMUM ALLOWABLE AMBIENT TEMPERATURE ( °C) dc 110 PAD AREA = 4.0 cm2, 50 OR 60 Hz HALFWAVE α = 30° 10 1.0 cm2 FOIL, 50 OR 60 Hz HALFWAVE Figure 5. Current Derating, 1.0 cm Square Pad Reference: Ambient Temperature dc 0 9.0 Figure 4. Current Derating, Minimum Pad Size Reference: Ambient Temperature 90 50 8.0 IT(AV), AVERAGE ON-STATE CURRENT (AMPS) 100 60 7.0 IT(AV), AVERAGE ON-STATE CURRENT (AMPS) 110 80 6.0 FOIL AREA (cm2) 80 20 0.5 0.4 0.3 5.0 90 30 α = 30 20 4.0 Figure 3. Junction to Ambient Thermal Resistance versus Copper Tab Area T A , MAXIMUM ALLOWABLE AMBIENT TEMPERATURE ( °C) T A , MAXIMUM ALLOWABLE AMBIENT TEMPERATURE ( °C) Figure 2. On-State Characteristics 50 OR 60 Hz HALFWAVE L 4 1 2 3 vT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) 90 L TYPICAL MAXIMUM 0.2 0.3 0.4 85 0.5 0 0.1 0.2 0.3 0.4 IT(AV), AVERAGE ON-STATE CURRENT (AMPS) IT(AV), AVERAGE ON-STATE CURRENT (AMPS) Figure 6. Current Derating, 2.0 cm Square Pad Reference: Ambient Temperature Figure 7. Current Derating Reference: Anode Tab http://onsemi.com 4 0.5 MCR08B, MCR08M 1.0 MAXIMUM AVERAGE POWER P(AV),DISSIPATION (WATTS) 0.9 α 0.8 α = 0.7 r T , TRANSIENT THERMAL RESISTANCE NORMALIZED 1.0 α = 30° CONDUCTION ANGLE 60° 0.6 90° 0.5 0.4 dc 0.3 180° 0.2 120° 0.1 0 0 0.1 0.2 0.01 0.0001 0.5 0.4 0.3 0.1 0.001 VAK = 12 V RL = 100 Ω 0.6 I H , HOLDING CURRENT (NORMALIZED) VGT , GATE TRIGGER VOLTAGE (VOLTS) 100 2.0 0.5 0.4 –20 0 20 40 60 80 VAK = 12 V RL = 3.0 kΩ 1.0 0 –40 110 –20 0 20 40 60 80 110 TJ, JUNCTION TEMPERATURE, (°C) TJ, JUNCTION TEMPERATURE, (°C) Figure 11. Typical Normalized Holding Current versus Junction Temperature Figure 10. Typical Gate Trigger Voltage versus Junction Temperature 1000 I GT , GATE TRIGGER CURRENT ( µA) 0.7 V GT , GATE TRIGGER VOLTAGE (VOLTS) 10 Figure 9. Thermal Response Device Mounted on Figure 1 Printed Circuit Board 0.7 0.65 0.6 RGK = 1000 Ω, RESISTOR CURRENT INCLUDED 100 0.55 0.5 VAK = 12 V RL = 100 Ω TJ = 25°C 0.45 0.4 0.35 0.3 0.1 1.0 t, TIME (SECONDS) Figure 8. Power Dissipation 0.3 –40 0.1 0.01 IT(AV), AVERAGE ON-STATE CURRENT (AMPS) 1.0 10 100 1000 VAK = 12 V RL = 100 Ω WITHOUT GATE RESISTOR 10 1.0 –40 –20 0 20 40 60 80 TJ, JUNCTION TEMPERATURE (°C) IGT, GATE TRIGGER CURRENT (µA) Figure 12. Typical Range of VGT versus Measured IGT Figure 13. Typical Gate Trigger Current versus Junction Temperature http://onsemi.com 5 110 MCR08B, MCR08M 10000 100 IGT = 48 µA 10 Vpk = 400 V 1000 STATIC dv/dt (V/ µS) IH , HOLDING CURRENT (mA) 5000 TJ = 25°C IGT = 7 µA 1.0 500 100 TJ = 25° 50 10 125° 5.0 50° 110° 1.0 75° 0.5 0.1 1.0 10 1000 10,000 0.1 10 100 1000 10,000 100,000 RGK, GATE-CATHODE RESISTANCE (OHMS) Figure 14. Holding Current Range versus Gate-Cathode Resistance Figure 15. Exponential Static dv/dt versus Junction Temperature and Gate-Cathode Termination Resistance 10000 300 V 1000 TJ = 110°C 1000 200 V 500 100,000 RGK, GATE-CATHODE RESISTANCE (OHMS) 10000 100 V TJ = 110°C 400 V (PEAK) 500 100 STATIC dv/dt (V/ µS) 400 V 50 V 50 500 V 10 5.0 100 RGK = 100 50 10 RGK = 1.0 k 5.0 1.0 10 100 1000 10,000 RGK = 10 k 1.0 0.01 0.1 1.0 10 RGK, GATE-CATHODE RESISTANCE (OHMS) CGK, GATE-CATHODE CAPACITANCE (nF) Figure 16. Exponential Static dv/dt versus Peak Voltage and Gate-Cathode Termination Resistance Figure 17. Exponential Static dv/dt versus Gate-Cathode Capacitance and Resistance 10000 1000 500 STATIC dv/dt (V/ µS) STATIC dv/dt (V/ µS) 100 100 50 IGT = 70 µA 10 IGT = 5 µA IGT = 35 µA 5.0 1.0 10 100 IGT = 15 µA 1000 10,000 GATE-CATHODE RESISTANCE (OHMS) Figure 18. Exponential Static dv/dt versus Gate-Cathode Termination Resistance and Product Trigger Current Sensitivity http://onsemi.com 6 100,000 100 MCR08B, MCR08M INFORMATION FOR USING THE SOT-223 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. 0.15 3.8 0.079 2.0 0.091 2.3 0.248 6.3 0.091 2.3 0.079 2.0 0.059 1.5 0.059 1.5 0.059 1.5 inches mm SOT-223 SOT-223 POWER DISSIPATION The power dissipation of the SOT-223 is a function of the anode pad size. This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, RθJA, the thermal resistance from the device junction to ambient, and the operating temperature, TA. Using the values provided on the data sheet for the SOT-223 package, PD can be calculated as follows: PD = The 156°C/W for the SOT-223 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 550 milliwatts. There are other alternatives to achieving higher power dissipation from the SOT-223 package. One is to increase the area of the anode pad. By increasing the area of the anode pad, the power dissipation can be increased. Although one can almost double the power dissipation with this method, one will be giving up area on the printed circuit board which can defeat the purpose of using surface mount technology. A graph of RθJA versus anode pad area is shown in Figure 3. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad. Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint. TJ(max) – TA RθJA The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature TA of 25°C, one can calculate the power dissipation of the device which in this case is 550 milliwatts. PD = 110°C – 25°C = 550 milliwatts 156°C/W SOLDER STENCIL GUIDELINES or stainless steel with a typical thickness of 0.008 inches. The stencil opening size for the SOT-223 package should be the same as the pad size on the printed circuit board, i.e., a 1:1 registration. Prior to placing surface mount components onto a printed circuit board, solder paste must be applied to the pads. A solder stencil is required to screen the optimum amount of solder paste onto the footprint. The stencil is made of brass http://onsemi.com 7 MCR08B, MCR08M SOLDERING PRECAUTIONS • The soldering temperature and time should not exceed 260°C for more than 10 seconds. • When shifting from preheating to soldering, the maximum temperature gradient should be 5°C or less. • After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. • Mechanical stress or shock should not be applied during cooling. The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. • Always preheat the device. • The delta temperature between the preheat and soldering should be 100°C or less.* • When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference should be a maximum of 10°C. * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device. TYPICAL SOLDER HEATING PROFILE The line on the graph shows the actual temperature that might be experienced on the surface of a test board at or near a central solder joint. The two profiles are based on a high density and a low density board. The Vitronics SMD310 convection/infrared reflow soldering system was used to generate this profile. The type of solder used was 62/36/2 Tin Lead Silver with a melting point between 177–189°C. When this type of furnace is used for solder reflow work, the circuit boards and solder joints tend to heat first. The components on the board are then heated by conduction. The circuit board, because it has a large surface area, absorbs the thermal energy more efficiently, then distributes this energy to the components. Because of this effect, the main body of a component may be up to 30 degrees cooler than the adjacent solder joints. For any given circuit board, there will be a group of control settings that will give the desired heat pattern. The operator must set temperatures for several heating zones, and a figure for belt speed. Taken together, these control settings make up a heating “profile” for that particular circuit board. On machines controlled by a computer, the computer remembers these profiles from one operating session to the next. Figure 19 shows a typical heating profile for use when soldering a surface mount device to a printed circuit board. This profile will vary among soldering systems but it is a good starting point. Factors that can affect the profile include the type of soldering system in use, density and types of components on the board, type of solder used, and the type of board or substrate material being used. This profile shows temperature versus time. STEP 1 PREHEAT ZONE 1 “RAMP” 200°C STEP 2 STEP 3 VENT HEATING “SOAK” ZONES 2 & 5 “RAMP” DESIRED CURVE FOR HIGH MASS ASSEMBLIES 150°C STEP 5 STEP 6 STEP 7 STEP 4 HEATING VENT COOLING HEATING ZONES 3 & 6 ZONES 4 & 7 205° TO “SPIKE” “SOAK” 219°C 170°C PEAK AT SOLDER 160°C JOINT 150°C 100°C 140°C 100°C SOLDER IS LIQUID FOR 40 TO 80 SECONDS (DEPENDING ON MASS OF ASSEMBLY) DESIRED CURVE FOR LOW MASS ASSEMBLIES 50°C TMAX TIME (3 TO 7 MINUTES TOTAL) Figure 19. Typical Solder Heating Profile http://onsemi.com 8 MCR08B, MCR08M PACKAGE DIMENSIONS SOT–223 CASE 318E–04 ISSUE J A F NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 4 S B 1 2 3 D L G J C 0.08 (0003) H M INCHES DIM MIN MAX A 0.249 0.263 B 0.130 0.145 C 0.060 0.068 D 0.024 0.035 F 0.115 0.126 G 0.087 0.094 H 0.0008 0.0040 J 0.009 0.014 K 0.060 0.078 L 0.033 0.041 M 0_ 10 _ S 0.264 0.287 K STYLE 10: PIN 1. CATHODE 2. ANODE 3. GATE 4. ANODE http://onsemi.com 9 MILLIMETERS MIN MAX 6.30 6.70 3.30 3.70 1.50 1.75 0.60 0.89 2.90 3.20 2.20 2.40 0.020 0.100 0.24 0.35 1.50 2.00 0.85 1.05 0_ 10 _ 6.70 7.30 MCR08B, MCR08M Notes http://onsemi.com 10 MCR08B, MCR08M Notes http://onsemi.com 11 MCR08B, MCR08M ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION NORTH AMERICA Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303–675–2175 or 800–344–3860 Toll Free USA/Canada Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada Email: [email protected] Fax Response Line: 303–675–2167 or 800–344–3810 Toll Free USA/Canada N. American Technical Support: 800–282–9855 Toll Free USA/Canada EUROPE: LDC for ON Semiconductor – European Support German Phone: (+1) 303–308–7140 (M–F 1:00pm to 5:00pm Munich Time) Email: ONlit–[email protected] French Phone: (+1) 303–308–7141 (M–F 1:00pm to 5:00pm Toulouse Time) Email: ONlit–[email protected] English Phone: (+1) 303–308–7142 (M–F 12:00pm to 5:00pm UK Time) Email: [email protected] EUROPEAN TOLL–FREE ACCESS*: 00–800–4422–3781 *Available from Germany, France, Italy, England, Ireland CENTRAL/SOUTH AMERICA: Spanish Phone: 303–308–7143 (Mon–Fri 8:00am to 5:00pm MST) Email: ONlit–[email protected] ASIA/PACIFIC: LDC for ON Semiconductor – Asia Support Phone: 303–675–2121 (Tue–Fri 9:00am to 1:00pm, Hong Kong Time) Toll Free from Hong Kong & Singapore: 001–800–4422–3781 Email: ONlit–[email protected] JAPAN: ON Semiconductor, Japan Customer Focus Center 4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031 Phone: 81–3–5740–2745 Email: [email protected] ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. http://onsemi.com 12 MCR08BT1/D