UniFETTM FDA20N50F tm N-Channel MOSFET 500V, 22A, 0.26Ω Features Description • RDS(on) = 0.22Ω ( Typ.) @ VGS = 10V, ID = 11A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( Typ. 50nC ) • Low Crss ( Typ. 27pF ) This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These device are well suited for high efficient switched mode power supplies and active power factor correction. • Fast switching • 100% avalanche tested • Improved dv/dt capability • RoHS compliant D G G DS TO-3PN S MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Symbol VDSS Drain to Source Voltage Parameter VGSS Gate to Source Voltage -Continuous (TC = 25oC) Ratings 500 Units V ±30 V 22 ID Drain Current IDM Drain Current EAS Single Pulsed Avalanche Energy IAR Avalanche Current (Note 1) 22 A EAR Repetitive Avalanche Energy (Note 1) 39 mJ dv/dt Peak Diode Recovery dv/dt 20 V/ns -Continuous (TC = 100oC) - Pulsed 88 A (Note 2) 1110 mJ (Note 3) Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds TL (Note 1) (TC = 25oC) PD A 13 - Derate above 25oC 388 W 3.1 W/oC -55 to +150 o C 300 o C Thermal Characteristics Symbol Parameter RθJC Thermal Resistance, Junction to Case RθCS Thermal Resistance, Case to Sink RθJA Thermal Resistance, Junction to Ambient ©2012 Fairchild Semiconductor Corporation FDA20N50F Rev.C0 1 Min. Max. - 0.44 0.24 - - 40 Units o C/W www.fairchildsemi.com FDA20N50F N-Channel MOSFET January 2012 Device Marking FDA20N50F Device FDA20N50F Package TO-3PN Reel Size - Tape Width - Quantity 30 Electrical Characteristics TC = 25oC unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Units 500 - - V ID = 250μA, Referenced to 25 C - 0.6 - V/oC VDS = 500V, VGS = 0V Off Characteristics BVDSS ΔBVDSS / ΔTJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current ID = 250μA, VGS = 0V, TJ = 25oC o - - 10 VDS = 400V, TC = 125oC - - 100 VGS = ±30V, VDS = 0V - - ±100 3.0 - 5.0 V - 0.22 0.26 Ω - 24 - S μA nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250μA Static Drain to Source On Resistance VGS = 10V, ID = 11A gFS Forward Transconductance VDS = 40V, ID = 11A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg(tot) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VDS = 25V, VGS = 0V f = 1MHz VDS = 400V, ID = 20A VGS = 10V (Note 4, 5) - 2550 3390 pF - 350 465 pF - 27 40 pF - 50 65 nC - 14 - nC - 20 - nC - 45 100 ns - 120 250 ns - 100 210 ns - 60 130 ns Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VDD = 250V, ID = 20A RG = 25Ω (Note 4, 5) Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 22 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 88 A VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 22A - - 1.5 V trr Reverse Recovery Time - 154 - ns Qrr Reverse Recovery Charge VGS = 0V, ISD = 20A dIF/dt = 100A/μs - 0.5 - μC (Note 4) Notes: 1: Repetitive Rating: Pulse width limited by maximum junction temperature 2: L = 5mH, IAS = 20A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3: ISD ≤ 22A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C 4: Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2% 5: Essentially Independent of Operating Temperature Typical Characteristics FDA20N50F Rev.C0 2 www.fairchildsemi.com FDA20N50F N-Channel MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 100 VGS = 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 10 ID,Drain Current[A] ID,Drain Current[A] 80 o 10 150 C o 25 C *Notes: 1. 250μs Pulse Test 1 *Notes: 1. VDS = 20V 2. 250μs Pulse Test o 0.5 0.1 2. TC = 25 C 1 VDS,Drain-Source Voltage[V] 1 10 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 4 6 VGS,Gate-Source Voltage[V] 8 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 100 0.8 IS, Reverse Drain Current [A] RDS(ON) [Ω], Drain-Source On-Resistance 0.7 0.6 0.5 0.4 VGS = 10V 0.3 VGS = 20V 0.2 o 150 C 10 o 25 C 1 *Notes: 1. VGS = 0V o 0.1 *Note: TJ = 25 C 0 25 50 ID, Drain Current [A] 0.2 0.0 75 Figure 5. Capacitance Characteristics Coss 3000 Ciss 1.5 10 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 4500 0.5 1.0 VSD, Body Diode Forward Voltage [V] Figure 6. Gate Charge Characteristics VGS, Gate-Source Voltage [V] Capacitances [pF] 6000 2. 250μs Pulse Test *Note: 1. VGS = 0V 2. f = 1MHz 1500 VDS = 100V VDS = 250V VDS = 400V 8 6 4 2 Crss 0 0.1 FDA20N50F Rev.C0 1 10 VDS, Drain-Source Voltage [V] 0 50 3 *Note: ID = 20A 0 10 20 30 40 50 Qg, Total Gate Charge [nC] 60 www.fairchildsemi.com FDA20N50F N-Channel MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. Maximum Safe Operating Area 200 1.2 30μs ID, Drain Current [A] BVDSS, [Normalized] Drain-Source Breakdown Voltage 100 1.1 1.0 100μs 10 1ms DC 1 *Notes: 0.9 o 1. TC = 25 C *Notes: 1. VGS = 0V 2. ID = 250μA 0.8 -100 -50 0 50 100 150 o TJ, Junction Temperature [ C] 10ms Operation in This Area is Limited by R DS(on) o 0.1 200 2. TJ = 150 C 3. Single Pulse 1 10 100 VDS, Drain-Source Voltage [V] 1000 Figure 9. Maximum Drain Current vs. Case Temperature 25 ID, Drain Current [A] 20 15 10 5 0 25 50 75 100 125 o TC, Case Temperature [ C] 150 Figure 10. Transient Thermal Response Curve Thermal Response [ZθJC] 1 0.5 0.1 0.2 0.1 0.01 t1 0.02 t2 *Notes: 0.01 o 1. ZθJC(t) = 0.44 C/W Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * ZθJC(t) Single pulse 1E-3 -5 10 FDA20N50F Rev.C0 PDM 0.05 -4 10 -3 -2 10 10 Rectangular Pulse Duration [sec] 4 -1 10 0 10 www.fairchildsemi.com FDA20N50F N-Channel MOSFET Typical Performance Characteristics (Continued) FDA20N50F N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FDA20N50F Rev.C0 5 www.fairchildsemi.com FDA20N50F N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VDD VSD Body Diode Forward Voltage Drop FDA20N50F Rev.C0 6 www.fairchildsemi.com FDA20N50F N-Channel MOSFET Mechanical Dimensions TO-3PN FDA20N50F Rev.C0 7 www.fairchildsemi.com tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used here in: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I61 FDA20N50F Rev.C0 8 www.fairchildsemi.com FDA20N50F N-Channel MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. The Power Franchise® F-PFS™ 2Cool™ PowerTrench® ® FRFET® AccuPower™ PowerXS™ Global Power ResourceSM AX-CAP™* Programmable Active Droop™ ® ® Green Bridge™ BitSiC QFET TinyBoost™ Green FPS™ Build it Now™ QS™ TinyBuck™ Green FPS™ e-Series™ CorePLUS™ Quiet Series™ TinyCalc™ Gmax™ CorePOWER™ RapidConfigure™ TinyLogic® GTO™ CROSSVOLT™ ™ TINYOPTO™ IntelliMAX™ CTL™ TinyPower™ ISOPLANAR™ Current Transfer Logic™ Saving our world, 1mW/W/kW at a time™ TinyPWM™ Marking Small Speakers Sound Louder SignalWise™ DEUXPEED® TinyWire™ Dual Cool™ and Better™ SmartMax™ TranSiC® EcoSPARK® MegaBuck™ SMART START™ TriFault Detect™ EfficentMax™ MICROCOUPLER™ Solutions for Your Success™ TRUECURRENT®* ESBC™ MicroFET™ SPM® μSerDes™ STEALTH™ MicroPak™ ® SuperFET® MicroPak2™ SuperSOT™-3 MillerDrive™ Fairchild® UHC® SuperSOT™-6 MotionMax™ Fairchild Semiconductor® Ultra FRFET™ SuperSOT™-8 Motion-SPM™ FACT Quiet Series™ UniFET™ SupreMOS® mWSaver™ FACT® VCX™ ® SyncFET™ OptoHiT™ FAST ® VisualMax™ Sync-Lock™ OPTOLOGIC FastvCore™ ® VoltagePlus™ OPTOPLANAR ®* FETBench™ XS™ FlashWriter® * ® FPS™