isc Product Specification INCHANGE Semiconductor isc N-Channel MOSFET Transistor BUZ83A DESCRIPTION ·Static Drain-Source On-Resistance : RDS(on) = 3.0Ω(Max) ·SOA is Power Dissipation Limited APPLICATIONS designed for applications such as switching regulators, switching converters, motor drivers,relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 800 V VGS Gate-Source Voltage ±20 V Drain Current-continuous@ TC=37℃ 3.4 A Total Dissipation@TC=25℃ 78 W Max. Operating Junction Temperature -55~150 ℃ Storage Temperature Range -55~150 ℃ ID Ptot Tj Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER MAX UNIT 1.6 ℃/W Thermal Resistance,Junction to Case isc website：www.iscsemi.cn PDF pdfFactory Pro 1 isc & iscsemi is registered trademark www.fineprint.cn isc Product Specification INCHANGE Semiconductor isc N-Channel Mosfet Transistor BUZ83A ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS MIN V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA 800 VGS(TH) Gate Threshold Voltage VDS= VGS; ID= 10mA 2.1 RDS(ON) Drain-Source On-stage Resistance VGS= 10V; ID= 1.5A IGSS Gate Source Leakage Current IDSS VSD MAX UNIT V 4 V 3 Ω VGS= 20V;VDS= 0 100 nA Zero Gate Voltage Drain Current VDS= 800V; VGS= 0 250 uA Diode Forward Voltage IF= 6.8A; VGS= 0 1.35 V isc website：www.iscsemi.cn PDF pdfFactory Pro 2 isc & iscsemi is registered trademark www.fineprint.cn