SO T3 53 BAS21PG Dual isolated high-voltage switching diode 9 June 2015 Product data sheet 1. General description Dual high-voltage switching diode encapsulated in a very small SOT353 (SC-88A) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • • • • • • High switching speed: trr ≤ 50 ns Low leakage current Reverse voltage VR ≤ 250 V Low capacitance: Cd ≤ 2 pF Very small SMD plastic package AEC-Q101 qualified 3. Applications • • • • High-speed switching at high voltage High-voltage general-purpose switching Voltage clamping Reverse polarity protection 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit IF forward current Tj = 25 °C; single diode loaded - - 225 mA VR reverse voltage Tj = 25 °C - - 250 V IR reverse current VR = 200 V; Tj = 25 °C - 25 100 nA trr reverse recovery time IF = 10 mA; IR = 10 mA; IR(meas) = 1 mA; - - 50 ns Per diode Per diode RL = 100 Ω; Tj = 25 °C Scan or click this QR code to view the latest information for this product BAS21PG NXP Semiconductors Dual isolated high-voltage switching diode 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 A1 anode diode 1 2 n.c. not connected 3 A2 anode diode 2 4 K2 cathode diode 2 5 K1 cathode diode 1 Simplified outline 5 1 Graphic symbol 4 2 5 4 3 TSSOP5 (SOT353) 1 2 3 aaa-018440 6. Ordering information Table 3. Ordering information Type number BAS21PG Package Name Description Version TSSOP5 plastic surface-mounted package; 5 leads SOT353 7. Marking Table 4. Marking codes Type number Marking code BAS21PG PG BAS21PG Product data sheet All information provided in this document is subject to legal disclaimers. 9 June 2015 © NXP Semiconductors N.V. 2015. All rights reserved 2 / 13 BAS21PG NXP Semiconductors Dual isolated high-voltage switching diode 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VR reverse voltage Tj = 25 °C - 250 V IF forward current Tj = 25 °C; single diode loaded - 225 mA Tj = 25 °C; double diode loaded - 125 mA Per diode IFRM repetitive peak forward current tp ≤ 1 ms; δ = 25 %; Tj = 25 °C - 625 mA IFSM non-repetitive peak forward current tp = 1 µs; Tj(init) = 25 °C; square wave - 9 A tp = 100 µs; Tj(init) = 25 °C; square wave - 3 A tp = 10 ms; Tj(init) = 25 °C; square wave - 1.7 A [1] - 255 mW [2] - 290 mW Per device; one diode loaded Ptot total power dissipation Tamb ≤ 25 °C Tj junction temperature - 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C [1] [2] BAS21PG Product data sheet Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm². All information provided in this document is subject to legal disclaimers. 9 June 2015 © NXP Semiconductors N.V. 2015. All rights reserved 3 / 13 BAS21PG NXP Semiconductors Dual isolated high-voltage switching diode 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Rth(j-a) thermal resistance from junction to ambient thermal resistance from junction to solder point Rth(j-sp) [1] [2] [3] 103 Conditions Min Typ Max Unit [1] - - 495 K/W [2] - - 430 K/W [3] - - 95 K/W Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm². Soldering point of cathode tab. aaa-018393 duty cycle = 1 Zth(j-a) (K/W) 0.5 102 0.25 0.75 0.33 0.2 0.1 0.05 10 0.02 0.01 0 1 10-5 10-4 10-3 10-2 10-1 1 10 102 tp (s) 103 FR4 PCB, standard footprint Fig. 1. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values BAS21PG Product data sheet All information provided in this document is subject to legal disclaimers. 9 June 2015 © NXP Semiconductors N.V. 2015. All rights reserved 4 / 13 BAS21PG NXP Semiconductors Dual isolated high-voltage switching diode aaa-018394 103 duty cycle = Zth(j-a) (K/W) 1 0.75 0.5 102 0.33 0.25 0.2 0.1 0.05 0.02 10 0.01 0 1 10-5 10-4 10-3 10-2 10-1 1 102 10 tp (s) 103 FR4 PCB, mounting pad for cathode 1 cm² Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit V(BR)R reverse breakdown voltage IR = 100 µA; Tj = 25 °C 250 - - V VF forward voltage IF = 100 mA; Tj = 25 °C - - 1 V IF = 200 mA; Tj = 25 °C - - 1.25 V VR = 200 V; Tj = 25 °C - 25 100 nA VR = 200 V; Tj = 150 °C - 40 - µA Per diode IR reverse current Cd diode capacitance VR = 0 V; f = 1 MHz; Tj = 25 °C - 0.8 2 pF trr reverse recovery time IF = 10 mA; IR = 10 mA; IR(meas) = 1 mA; - - 50 ns RL = 100 Ω; Tj = 25 °C BAS21PG Product data sheet All information provided in this document is subject to legal disclaimers. 9 June 2015 © NXP Semiconductors N.V. 2015. All rights reserved 5 / 13 BAS21PG NXP Semiconductors Dual isolated high-voltage switching diode aaa-018395 1 IR (A) IF (A) 10-1 aaa-018396 10-4 (1) 10-5 (2) 10-6 10-7 (1) (2) 10-2 (3) (4) 10-8 (3) (4) 10-9 (5) 10-3 10-10 (5) 10-11 10-4 0.0 Fig. 3. 0.4 0.8 1.2 VF (V) 10-12 1.6 0 50 100 (1) Tj = 150 °C (1) Tj = 150 °C (2) Tj = 125 °C (2) Tj = 125 °C (3) Tj = 85 °C (3) Tj = 85 °C (4) Tj = 25 °C (4) Tj = 25 °C (5) Tj = −40 °C (5) Tj = −40 °C Forward current as a function of forward voltage; typical values Fig. 4. mbg703 102 150 200 VR (V) 250 Reverse current as a function of reverse voltage; typical values aaa-018397 1.0 Cd (pF) IFSM (A) 0.8 10 0.6 0.4 1 0.2 10- 1 1 10 102 103 tp (µs) 0.0 104 Based on square wave currents. Tj(init) = 25 °C Fig. 5. Product data sheet 2 4 6 VR (R) 8 f = 1MHz; Tamb = 25 °C Non-repetitive peak forward current as a function of pulse duration; maximum values BAS21PG 0 Fig. 6. Diode capacitance as a function of reverse voltage; typical values All information provided in this document is subject to legal disclaimers. 9 June 2015 © NXP Semiconductors N.V. 2015. All rights reserved 6 / 13 BAS21PG NXP Semiconductors Dual isolated high-voltage switching diode aaa-018398 3 IF(AV) (A) (1) 2 (2) (3) 1 (4) 0 0 25 50 75 100 125 150 175 Tamb (°C) FR4 PCB, standard footprint; one diode loaded (1) δ = 1 (2) δ = 0.5 (3) δ = 0.2 (4) δ = 0.1 Fig. 7. Average forward current as a function of ambient temperature; typical values 11. Test information tr D.U.T. RS = 50 Ω IF tp 10 % t + IF SAMPLING OSCILLOSCOPE trr t Ri = 50 Ω V = VR + IF × RS mga881 (1) 90 % VR input signal output signal (1) IR = 1 mA Fig. 8. Reverse recovery time: test circuit and waveforms P tcy duty cycle δ = tp tcy tp t 006aac658 Fig. 9. Duty cycle definition The current ratings for the typical waveforms are calculated according to the equations: IF(AV) = IM × δ with IM defined as peak current, IRMS = IF(AV) at DC, and IRMS = IM × √δ with IRMS defined as RMS current. BAS21PG Product data sheet All information provided in this document is subject to legal disclaimers. 9 June 2015 © NXP Semiconductors N.V. 2015. All rights reserved 7 / 13 BAS21PG NXP Semiconductors Dual isolated high-voltage switching diode 11.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. 12. Package outline 2.2 1.8 1.1 0.8 5 0.45 0.15 4 2.2 1.35 2.0 1.15 1 2 3 0.3 0.2 0.65 1.3 0.25 0.10 Dimensions in mm 04-11-16 Fig. 10. Package outline TSSOP5 (SOT353) 13. Soldering 2.65 0.5 0.6 (4×) (4×) 0.75 solder lands 2.35 0.4 0.75 solder resist solder paste occupied area 0.5 (4×) 0.6 Dimensions in mm 0.6 (4×) 0.9 0.9 sot353_fr Fig. 11. Reflow soldering footprint for TSSOP5 (SOT353) BAS21PG Product data sheet All information provided in this document is subject to legal disclaimers. 9 June 2015 © NXP Semiconductors N.V. 2015. All rights reserved 8 / 13 BAS21PG NXP Semiconductors Dual isolated high-voltage switching diode 4.9 2.25 1.5 solder lands 1 solder resist 0.85 2.5 4.5 0.85 occupied area Dimensions in mm 1 1.5 1.3 preferred transport direction during soldering 1.3 1.225 1.225 sot353_fw Fig. 12. Wave soldering footprint for TSSOP5 (SOT353) BAS21PG Product data sheet All information provided in this document is subject to legal disclaimers. 9 June 2015 © NXP Semiconductors N.V. 2015. All rights reserved 9 / 13 BAS21PG NXP Semiconductors Dual isolated high-voltage switching diode 14. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes BAS21PG v.1 20150609 Product data sheet - - BAS21PG Product data sheet All information provided in this document is subject to legal disclaimers. 9 June 2015 © NXP Semiconductors N.V. 2015. All rights reserved 10 / 13 BAS21PG NXP Semiconductors Dual isolated high-voltage switching diode In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 15. 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BAS21PG Product data sheet Suitability for use in automotive applications — This NXP Semiconductors product has been qualified for use in automotive applications. Unless otherwise agreed in writing, the product is not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 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NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. All information provided in this document is subject to legal disclaimers. 9 June 2015 © NXP Semiconductors N.V. 2015. All rights reserved 11 / 13 BAS21PG NXP Semiconductors Dual isolated high-voltage switching diode No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 15.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 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Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ............................................. 2 7 Marking ................................................................... 2 8 Limiting values .......................................................3 9 Thermal characteristics .........................................4 10 Characteristics ....................................................... 5 11 11.1 Test information ..................................................... 7 Quality information ............................................... 8 12 Package outline ..................................................... 8 13 Soldering ................................................................ 8 14 Revision history ................................................... 10 15 15.1 15.2 15.3 15.4 Legal information .................................................11 Data sheet status ............................................... 11 Definitions ...........................................................11 Disclaimers .........................................................11 Trademarks ........................................................ 12 © NXP Semiconductors N.V. 2015. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 9 June 2015 BAS21PG Product data sheet All information provided in this document is subject to legal disclaimers. 9 June 2015 © NXP Semiconductors N.V. 2015. All rights reserved 13 / 13