MBR2535CT - MBR2560CT Features • • • • • • 0.185(4.70) 0.175(4.44) 0.412(10.5) MAX 0.055(1.40) 0.045(1.14) 0.154(3.91) 0.148(3.74) Low power loss, high efficiency. High surge capacity. For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. Metal silicon junction, majority carrier conduction. High current capacity, low forward voltage drop. Guard ring for over voltage protection. 0.113(2.87) 0.27(6.86) 0.103(2.62) 0.23(5.84) 0.594(15.1) 0.587(14.9) TO-220AB 2 1 3 0.16(4.06) 0.14(3.56) 0.11(2.79) 0.10(2.54) PIN 1 + 0.56(14.22) 0.53(13.46) CASE PIN 2 PIN 3 0.037(0.94) 0.027(0.68) 0.025(0.64) 30 Ampere Schottky Barrier Rectifiers 0.105(2.67) 0.014(0.35) 0.095(2.41) Dimensions are in: inches (mm) Absolute Maximum Ratings* Symbol IO TA = 25°C unless otherwise noted Parameter Value Units 30 A 30 A 150 A 2.0 16.6 60 W mW/°C °C/W RθJA Average Rectified Current .375 " lead length @ TA = 130°C Peak Repetitive Forward Current (Rated VR , Square Wave, 20 KHz) @ TA = 130°C Peak Forward Surge Current 8.3 ms single half-sine-wave Superimposed on rated load (JEDEC method) Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient RθJL Thermal Resistance, Junction to Lead 1.5 °C/W Tstg Storage Temperature Range -65 to +175 °C TJ Operating Junction Temperature -65 to +150 °C if(repetitive) if(surge) PD *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Electrical Characteristics TA = 25°C unless otherwise noted Parameter Peak Repetitive Reverse Voltage Maximum RMS Voltage DC Reverse Voltage (Rated VR) Voltage Rate of Change (Rated VR) Maximum Reverse Current TA = 25°C @ rated VR TA = 125°C Maximum Forward Voltage IF = 15 A, TC = 25°C IF = 15 A, TC = 125°C IF = 30 A, TC = 25°C IF = 30 A, TC = 125°C Peak Repetitive Reverse Surge Current 2.0 us Pulse Width, f = 1.0 KHz 1999 Fairchild Semiconductor Corporation Device Units 2535CT 2545CT 2550CT 2560CT 35 45 50 60 V 24 31 35 42 V 35 45 50 60 V 10,000 V/uS 0.2 40 1.0 50 mA mA 0.82 0.73 0.75 0.65 - V V V V 1.0 0.5 A MBR2535CT - MBR2560CT, Rev. A MBR2535CT - MBR2560CT Discrete POWER & Signal Technologies (continued) Typical Characteristics Non-Repetitive Surge Current FORWARD CURRENT (A) 24 18 SINGLE PHASE HALF WAVE 60HZ RESISTIVE OR INDUCTIVE LOAD .375" (9.00mm) LOAD LENGTHS 12 6 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE (º C) 175 PEAK FORWARD SURGE CURRENT (A) Forward Current Derating Curve 30 150 125 100 75 50 25 0 1 Forward Characteristics MBR2535CT-MBR2545CT REVERSE CURRENT (mA) TA = 25º C T A = 150 º C 10 MBR2550CT-MBR2560CT 1 MBR2535CT-MBR2545CT 0.1 0 0.2 0.4 0.6 0.8 FORWARD VOLTAGE (V) 1 Typical Junction Capacitance 5000 2000 MBR2535CT-MBR2545CT 1000 MBR2550CT-MBR2560CT 500 200 100 0.1 1 10 REVERSE VOLTAGE (V) 100 10 T A = 125 º C 1 MBR2550CT-MBR2560CT TA = 75º C 0.1 MBR2535CT-MBR2545CT 0.01 0.001 1.2 TA = 25º C MBR2550CT-MBR2560CT 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) TRANSIENT THERMAL IMPEDANCE (º C/W) FORWARD CURRENT (A) 100 50 Pulse Width = 300µS 2% Duty Cycle JUNCTION CAPACITANCE (pF) 5 10 20 50 NUMBER OF CYCLES AT 60Hz Reverse Characteristics 50 0.01 2 Transient Thermal Impedance 100 10 1 0.1 0.01 0.1 1 10 T. PULSE DURATION (sec.) 100 MBR2535CT - MBR2560CT, Rev. A MBR2535CT - MBR2560CT Schotty Barrier Rectifier TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ CoolFET™ CROSSVOLT™ E2CMOSTM FACT™ FACT Quiet Series™ FAST® FASTr™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ POP™ PowerTrench™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 TinyLogic™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.