MURD1020CTD thru MURD1060CTD Pb MURD1020CTD/MURD1030CTD/MURD1040CTD/MURD1060CTD Pb Free Plating Product 10.0 Ampere Surface Mount Dual Doubler Polarity Ultra Fast Recovery Rectifiers Applications ¬ ¬ ¬ ¬ ¬ ¬ ¬ TO-252/DPAK Latest GPP EPI P/G Technology Unit : inch (mm) .264(6.7) .248(6.3) Good Soft Recovery Characteristics Ideally Suited for Automatic Assembly .098(2.5) .082(2.1) Low Forward Voltage 4 High Surge Current Capability .024(0.6) .016(0.4) .063(1.6) .047(1.2) .216(5.5) .200(5.1) Low Leakage Current .106(2.7) .090(2.3) 2 Freewheeling, Snubber, Clamp 3 1 Inversion Welder PFC Ultrasonic Cleaner and Welder .02(.5) .032(0.8) .012(0.3) .09 .09 (2.3) (2.3) Plating Power Supply .040(1.0) MIN. .225(5.7) .209(5.3) Features ¬ ¬ ¬ ¬ ¬ ¬ .071(1.8) .051(1.3) 4 4 Doubler Tandem Polarity Suffix "CTD" Series Tandem Polarity Suffix "CTS" 4 4 Converter & Chopper Negative Positive Common Cathode Common Anode Suffix "CT" Suffix "CTR" UPS/LED SMPS/HID Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Symbol Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage MURD1020CTD MURD1030CTD MURD1040CTD MURD1060CTD Unit VRRM VRWM VR 200 300 400 600 V VR(RMS) 140 210 280 420 V IO 10 5.0 A Non-Repetitive Peak Forward Surge Current 8.3ms Single Half Sine-Wave Superimposed on Rated Load (JEDEC Method) IFSM 100 A Forward Voltage per diode @IF = 5.0A VFM @TC = 25°C @TC = 100°C IRM Average Rectified Output Current @TC = 100°C Peak Reverse Current At Rated DC Blocking Voltage Total Device Per Diode 0.95 1.3 1.7 10 500 V µA Reverse Recovery Time (Note 1) trr 35 50 nS Typical Junction Capacitance (Note 2) CJ 70 50 pF Thermal Resistance Junction to Ambient (Note 3) Thermal Resistance Junction to Lead (Note 3) Operating and Storage Temperature Range RθJA RθJC 80 6.5 °C/W TJ, TSTG -55 to +150 °C Note: 1. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A. 2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC. 3. Mounted on PCB with minimum recommended pad sizes per diode. Rev.08T © 1995 Thinki Semiconductor Co., Ltd. Page 1/2 http://www.thinkisemi.com.tw/ MURD1020CTD thru MURD1060CTD RATINGS AND CHARACTERISTICS CURVES 8 6 4 2 Resistive or Inductive Load 0 15 MURD1030CTD MURD1040CTD MURD1020CTD 10 MURD1060CTD 1.0 0 30 45 60 75 90 105 120 135 150 TC, CASE TEMPERATURE (°C) Fig. 1 Forward Current Derating Curve 100 Single Half-Sine-Wave JEDEC Method 80 60 40 20 0 0.4 0.8 1.2 1.6 2.0 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics 1000 TC = 125°C 100 TC = 100°C 10 TC = 25°C 1.0 0.1 0.01 1 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Fig. 4 Typical Reverse Characteristics 10 100 NUMBER OF CYCLES AT 60Hz Fig. 3 Forward Surge Current Derating Curve 200 DC, TJ = 150°C 16 MURD1030CTD MURD1040CTD 12 MURD1060CTD 8 MURD1020CTD 4 CJ, JUNCTION CAPACITANCE (pF) 20 PD, POWER DISSIPATION (W) 100 0.1 0 IFSM, PEAK FORWARD SURGE CURRENT (A) IF, INSTANTANEOUS FORWARD CURRENT (A) 10 IR, INSTANTANEOUS REVERSE CURRENT (µA) I(AV), AVERAGE FORWARD RECTIFIED CURRENT (A) (TA=25°C unless otherwise noted) f = 1MHz 160 120 MURD1020CTD 80 40 MURD1030CTD/MURD1040CTD/MURD1060CTD 0 0 0 8 12 16 4 20 IF(AV), AVERAGE FORWARD CURRENT (A) Fig. 5 Forward Power Dissipation Rev.08T © 1995 Thinki Semiconductor Co., Ltd. 0.1 1 10 VR, DC REVERSE VOLTAGE (V) Fig. 6 Typical Junction Capacitance 100 Page 2/2 http://www.thinkisemi.com.tw/