GI500 thru GI510 Vishay General Semiconductor General Purpose Plastic Rectifier FEATURES • Low forward voltage drop • Low leakage current, IR less than 0.1 μA • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC DO-201AD TYPICAL APPLICATIONS For use in general purpose rectification of power supplies, inverters, converters and freewheeling diodes application. Note • These devices are not AEC-Q101 qualified. PRIMARY CHARACTERISTICS IF(AV) 3.0 A VRRM 200 V to 1000 V IFSM 100 A IR 5.0 μA VF 1.1 V TJ max. 150 °C MECHANICAL DATA Case: DO-201AD, molded epoxy body Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test per Polarity: Color band denotes cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL GI500 GI501 GI502 GI504 GI506 GI508 GI510 UNIT Maximum repetitive peak reverse voltage VRRM 50 100 200 400 600 800 1000 V Maximum RMS voltage VRMS 35 70 140 280 420 560 700 V Maximum DC blocking voltage VDC 50 100 200 400 600 800 1000 V Maximum average forward rectified current 0.375" (9.5 mm) lead length at TA = 95 °C IF(AV) 3.0 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 100 A TJ, TSTG - 50 to + 150 °C Operating junction and storage temperature range ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Maximum instantaneous forward voltage Maximum DC reverse current at rated DC blocking voltage TEST CONDITIONS SYMBOL TJ = 25 °C GI500 GI501 GI502 GI504 GI506 GI510 UNIT 1.1 VF 9.4 A GI508 TJ = 175 °C V 1.0 TA = 25 °C 5.0 IR TA = 100 °C μA 50 Typical reverse recovery time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A trr 2.0 μs Typical junction capacitance 4.0 V, 1 MHz CJ 28 pF Document Number: 88626 Revision: 28-Oct-09 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 1 GI500 thru GI510 Vishay General Semiconductor THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Typical thermal resistance GI500 GI501 GI502 GI504 RθJA (1) 20 (1) 5.0 RθJL GI506 GI508 GI510 UNIT °C/W Note (1) Thermal resistance from junction to ambient and from junction to lead at 0.375" (9.5 mm) lead length, P.C.B. mounted with 0.8" x 0.8" (20 mm x 20 mm) copper heatsinks ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE GI506-E3/54 1.1 54 1400 13" diameter paper tape and reel GI506-E3/73 1.1 73 1000 Ammo pack packaging RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) L= 100 L = 0.31" (7.9 mm) 0.2 5" 7.0 (6. 3m TL = Both Leads to Heat Sink Mounted Length (L) as Shown m) 6.0 L= 5.0 0.5 0" (1 2.7 mm 60 Hz Resistive or Inductive Load ) 4.0 3.0 2.0 TA = Ambient Temperature 0.375" (9.5 mm) Lead Length P.C.B. Mounted 1.0 Instantaneous Forward Current (A) Average Forward Rectified Current (A) 8.0 40 60 80 100 120 140 160 TJ = 25 °C Pulse Width = 300 μs 1 % Duty Cycle 0.1 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Lead Temperature (°C) Instantaneous Forward Voltage (V) Fig. 1 - Forward Current Derating Curve Fig. 3 - Typical Instantaneous Forward Characteristics 100 1000 TJ = 150 °C 8.3 ms Single Half Sine-Wave Instantaneous Reverse Current (μA) Peak Forward Surge Current (A) 1 0.01 0.4 0 20 10 100 Non-Repetitive Repetitive 10 10 TJ = 150 °C 1 TJ = 100 °C 0.1 TJ = 25 °C 0.01 1 10 100 0 20 40 60 80 Number of Cycles at 60 Hz Percent of Rated Peak Reverse Voltage (%) Fig. 2 - Maximum Non-repetitive Peak Forward Surge Current Fig. 4 - Typical Reverse Characteristics www.vishay.com 2 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] 100 Document Number: 88626 Revision: 28-Oct-09 GI500 thru GI510 Vishay General Semiconductor 100 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p Transient Thermal Impedance (°C/W) Junction Capacitance (pF) 100 10 1 0.1 1 10 10 1 0.1 0.01 100 0.1 1 10 100 Reverse Voltage (V) t - Pulse Duration (s) Fig. 5 - Typical Junction Capacitance Fig. 6 - Typical Transient Thermal Impedance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-201AD 1.0 (25.4) MIN. 0.210 (5.3) 0.190 (4.8) DIA. 0.375 (9.5) 0.285 (7.2) 1.0 (25.4) MIN. 0.052 (1.32) 0.048 (1.22) DIA. Document Number: 88626 Revision: 28-Oct-09 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 3 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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