Sample & Buy Product Folder Support & Community Tools & Software Technical Documents LMP7300 SNOSAT7G – AUGUST 2007 – REVISED OCTOBER 2015 LMP7300 Micropower Precision Comparator and Precision Reference With Adjustable Hysteresis 1 Features 3 Description • • • • • • • • • • • • • The LMP7300 is a combination comparator and reference with ideal specifications for precision threshold detecting. The precision 2.048-V reference comes with a 0.25% maximum error. The comparator features micropower (35 µW), low offset voltage (0.75-mV maximum), and independent adjustable positive and negative hysteresis. 1 (For VS = 5 V, typical unless otherwise noted) Supply Current 13 μA Propagation Delay 4 μs Input Offset Voltage 0.3 mV CMRR 100 dB PSRR 100 dB Positive and Negative Hysteresis Control Adjustable Hysteresis 1 mV/mV Reference Voltage 2.048 V Reference Voltage Accuracy 0.25% Reference Voltage Source Current 1 mA Wide Supply Voltage Range 2.7 V to 12 V Operating Temperature Range Ambient −40°C to 125°C Hysteresis control for the comparator is accomplished through two external pins. The HYSTP pin sets the positive hysteresis, and the HYSTN pin sets the negative hysteresis. The comparator design isolates the VIN source impedance and the programmable hysteresis components. This isolation prevents any undesirable interaction allowing the IC to maintain a precise threshold voltage during level detection. 2 Applications The combination of low offset voltage, external hysteresis control, and precision voltage reference provides an easy-to-use micropower precision threshold detector. • • • • The LMP7300 open collector output is ideal for mixed-voltage system designs. The output voltage upper rail is unconstrained by VCC and can be pulled above VCC to a maximum of 12 V. The LMP7300 is a member of the LMP precision amplifier family. Precision Threshold Detection Battery Monitoring Battery Management Systems Zero Crossing Detectors Device Information(1) PART NUMBER LMP7300 PACKAGE BODY SIZE (NOM) VSSOP (8) 3.00 mm × 3.00 mm SOIC (8) 3.91 mm × 4.90 mm (1) For all available packages, see the orderable addendum at the end of the data sheet. Typical Application VBATT = (TRIP @ .9V x 3 CELL) Propagation Delay vs Overdrive Voltage 30 R1 318.4 k: 1% R2 1 M: 1% + INP INN HYSTP HYSTN V LED + - GND OUT VREF R3 9.86 k: 1% R4 1 M: 1% R5 ADJUST FOR LED BRIGHTNESS + V = 12V PROPAGATION DELAY (Ps) 0.1 PF CL = 10 pF 25 20 15 10 -40°C 25°C 85°C 5 0 0 125°C 20 40 60 80 100 OVERDRIVE VOLTAGE (mV) 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. LMP7300 SNOSAT7G – AUGUST 2007 – REVISED OCTOBER 2015 www.ti.com Table of Contents 1 2 3 4 5 6 7 Features .................................................................. Applications ........................................................... Description ............................................................. Revision History..................................................... Pin Configuration and Functions ......................... Specifications......................................................... 1 1 1 2 3 4 6.1 6.2 6.3 6.4 6.5 6.6 6.7 6.8 4 4 4 4 5 6 7 8 Absolute Maximum Ratings ...................................... ESD Ratings.............................................................. Recommended Operating Conditions....................... Thermal Information .................................................. Electrical Characteristics: 2.7-V ................................ Electrical Characteristics: 5-V ................................... Electrical Characteristics: 12-V ................................ Typical Characteristics .............................................. Detailed Description ............................................ 10 7.1 Overview ................................................................. 10 7.2 Functional Block Diagram ....................................... 10 7.3 Feature Description................................................. 10 7.4 Device Functional Modes........................................ 15 8 Application and Implementation ........................ 16 8.1 Application Information............................................ 16 8.2 Typical Applications ................................................ 16 9 Power Supply Recommendations...................... 19 10 Layout................................................................... 20 10.1 Layout Guidelines ................................................. 20 10.2 Layout Example .................................................... 20 11 Device and Documentation Support ................. 22 11.1 11.2 11.3 11.4 11.5 Device Support...................................................... Community Resources.......................................... Trademarks ........................................................... Electrostatic Discharge Caution ............................ Glossary ................................................................ 22 22 22 22 22 12 Mechanical, Packaging, and Orderable Information ........................................................... 22 4 Revision History NOTE: Page numbers for previous revisions may differ from page numbers in the current version. Changes from Revision F (March 2013) to Revision G • Added ESD Ratings table, Feature Description section, Device Functional Modes, Application and Implementation section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and Mechanical, Packaging, and Orderable Information section. ................................................................................................. 1 Changes from Revision E (March 2013) to Revision F • 2 Page Page Changed layout of National Data Sheet to TI format ........................................................................................................... 19 Submit Documentation Feedback Copyright © 2007–2015, Texas Instruments Incorporated Product Folder Links: LMP7300 LMP7300 www.ti.com SNOSAT7G – AUGUST 2007 – REVISED OCTOBER 2015 5 Pin Configuration and Functions DGK or D Package 8-Pin VSSOP or SOIC Top View +IN -IN GND OUT 1 8 2 7 3 6 4 5 + V REF HYSTP HYSTN Pin Functions PIN NAME NO. TYPE (1) DESCRIPTION +IN 1 I Noninverting Comparator Input. The +IN has a common-mode voltage range from 1 V above the negative rail to, and including, the positive rail. Internal ESD diodes, connected from the +IN pin to the rails, protect the input stage from overvoltage. If the input voltage exceeds the rails, the diodes turn on and clamp the input to a safe level. -IN 2 I Inverting Comparator Input. The −IN has a common-mode voltage range from 1 V above the negative rail to, and including, the positive rail. Internal ESD diodes, connected from the −IN pin to the rails, protects the input stage from overvoltage. If the input voltage exceeds the rails, the diodes turn on and clamp the input to a safe level. GND 3 G Ground. This pin may be connected to a negative DC voltage source for applications requiring a dual supply. If connected to a negative supply, decouple this pin with 0.1-µF ceramic capacitor to ground. The internal reference output voltage is referenced to this pin. GND is the die substrate connection. OUT 4 O Comparator Output. The output is an open-collector. It can drive voltage loads by using a pullup resistor, or it can drive current loads by sinking a maximum output current. This pin may be taken to a maximum of +12 V with respect to the ground pin, irrespective of supply voltage. HYSTN 5 I Negative Hysteresis pin. This pin sets the lower trip voltage VIL. The common mode range is from 1V above the negative rail to VCC. The input signal must fall below VIL for the comparator to switch from high to low state. HYSTP 6 I Positive Hysteresis pin. This pin sets the upper trip voltage VIH. The common mode range is from 1V above the negative rail to VCC. The input signal must rise above VIH for the comparator to switch from low to high state. REF 7 O Reference Voltage Output pin. This is the output pin of a 2.048-V band gap precision reference. V+ 8 P Positive Supply Terminal. The supply voltage range is 2.7 V to 12 V. Decouple this pin with 0.1-μF ceramic capacitor to ground. (1) P= Power, G=Ground, I=Input, O=Output, A=Analog Submit Documentation Feedback Copyright © 2007–2015, Texas Instruments Incorporated Product Folder Links: LMP7300 3 LMP7300 SNOSAT7G – AUGUST 2007 – REVISED OCTOBER 2015 www.ti.com 6 Specifications 6.1 Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted) (1) (2) MIN MAX UNIT ±VS V 13.6 V VIN differential + − Supply voltage (VS = V – V ) V− − 0.3 V Infrared or convection (20 s) 235 °C Wave soldering lead temperature (10 s) 260 °C 150 °C 150 °C V+ + 0.3 Voltage at input/output pins Soldering information Junction temperature, TJ (3) Storage temperature, Tstg (1) (2) (3) –65 Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. If Military/Aerospace specified devices are required, contact the Texas Instruments Sales Office/ Distributors for availability and specifications. The maximum power dissipation is a function of TJ(MAX), θJA. The maximum allowable power dissipation at any ambient temperature is PD = (TJ(MAX) – TA)/ θJA. All numbers apply for packages soldered directly onto a PC Board. 6.2 ESD Ratings VALUE V(ESD) (1) (2) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1) ±2000 Charged-device model (CDM), per JEDEC specification JESD22C101 (2) ±250 Machine model ±200 UNIT V JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. 6.3 Recommended Operating Conditions over operating free-air temperature range (unless otherwise noted) (1) MIN Temperature (2) + MAX UNIT –40 125 °C 2.7 12 V − Supply Voltage (VS = V – V ) (1) (2) NOM Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is intended to be functional, but specific performance is not ensured. For ensured specifications and the test conditions, see the Electrical Characteristics Tables. The maximum power dissipation is a function of TJ(MAX), θJA. The maximum allowable power dissipation at any ambient temperature is PD = (TJ(MAX) – TA)/θJA. All numbers apply for packages soldered directly onto a PC Board. 6.4 Thermal Information LMP7300 THERMAL METRIC (1) DGK (VSSOP) D (SOIC) UNIT 8 PINS 8 PINS RθJA Junction-to-ambient thermal resistance (2) 175.5 121.2 °C/W RθJC(top) Junction-to-case (top) thermal resistance 66.1 67.5 °C/W RθJB Junction-to-board thermal resistance 95.6 61.5 °C/W ψJT Junction-to-top characterization parameter 10 18.3 °C/W ψJB Junction-to-board characterization parameter 94.2 61 °C/W (1) (2) 4 For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.. The maximum power dissipation is a function of TJ(MAX), θJA. The maximum allowable power dissipation at any ambient temperature is PD = (TJ(MAX) – TA)/ θJA. All numbers apply for packages soldered directly onto a PC Board. Submit Documentation Feedback Copyright © 2007–2015, Texas Instruments Incorporated Product Folder Links: LMP7300 LMP7300 www.ti.com SNOSAT7G – AUGUST 2007 – REVISED OCTOBER 2015 6.5 Electrical Characteristics: 2.7-V Unless otherwise specified, all limits are ensured for TA = 25°C, V+ = 2.7 V, V− = 0 V, and VCM = V+/2, RPULLUP = 100 kΩ, CLOAD = 10 pF. PARAMETER IS Supply Current TEST CONDITIONS MIN TA = 25°C RPULLUP = Open TYP MAX 9 12 TJ = TA 17 UNIT μA COMPARATOR VCM = V+/2 SOIC VOS Input Offset Voltage VCM = V+/2 VSSOP TA = 25°C ±0.07 TJ = TA ±0.75 ±2 TA = 25°C ±0.07 TJ = TA ±1 ±2.2 mV mV TCVOS Input Offset Average Drift See (1) IB Input Bias Current (2) |VID| < 2.5 V IOS Input Offset Current CMRR Common Mode Rejection Ratio 1 V < VCM < 2.7 V 80 100 dB PSRR Power Supply Rejection + V = 2.7 V to 12 V Ratio 80 100 dB VOL Output Low Voltage ILOAD = 10 mA ILEAK Output Leakage Current Comparator Output in High State HCLIN Hysteresis Control Voltage Linearity 0 < Ref-HYSTP,N < 25 mV IHYS Hysteresis Leakage Current TA = 25°C TPD Propagation Delay (High to Low) Overdrive = 10 mV, CL = 10 pF 12 17 Overdrive = 100 mV, CL = 10 pF 4.5 7.6 μV/°C 1.8 TA = 25°C 1.2 TJ = TA 3 4 0.15 TA = 25°C 0.25 TJ = TA 0.5 0.4 0.5 1 1.2 V mV/V 0.950 TJ = TA nA pA 1 25 mV < Ref-HYSTP,N < 100 mV nA 3 4 nA μs REFERENCE VO Reference Voltage Line Regulation SOIC 2.043 2.048 2.053 V VSSOP 2.043 2.048 2.056 V 14 80 0.2 mV/m 0.5 A VCC = 2.7 V to 12 V Load Regulation IOUT = 0 to 1 mA Temperature Coefficient −40°C to 125°C C VN Output Noise Voltage TCVREF/° (1) (2) 55 μV/V ppm/° C 0.1 Hz to 10 Hz 80 μVPP 10 Hz to 10 kHz 100 μVRMS Offset voltage average drift determined by dividing the change in VOS at temperature extremes, by the total temperature change. Positive current corresponds to current flowing into the device. Submit Documentation Feedback Copyright © 2007–2015, Texas Instruments Incorporated Product Folder Links: LMP7300 5 LMP7300 SNOSAT7G – AUGUST 2007 – REVISED OCTOBER 2015 www.ti.com 6.6 Electrical Characteristics: 5-V Unless otherwise specified, all limits are ensured for TA = 25°C, V+ = 5 V, V− = 0 V, and VCM = V+/2, RPULLUP = 100 kΩ, CLOAD = 10 pF. (1) PARAMETER IS Supply Current TEST CONDITIONS RPULLUP = Open MIN (2) TA = 25°C TYP (3) MAX (2) 10 13 TJ = TA 18 UNIT μA COMPARATOR VOS VCM = V+/2 SOIC VCM = V+/2 VSSOP Input Offset Voltage TA = 25°C ±0.07 TJ = TA ±0.75 ±2 TA = 25°C ±0.07 TJ = TA ±1 ±2.2 mV mV TCVOS Input Offset Average Drift See (4) IB Input Bias Current (5) |VID| < 2.5 V IOS Input Offset Current CMRR Common Mode Rejection Ratio 1 ≤ VCM ≤ 5 V 80 100 dB PSRR Power Supply Rejection Ratio V+ = 2.7 V to 12 V 80 100 dB VOL Output Voltage Low ILOAD = 10 mA ILEAK Output Leakage Current Comparator Output in High State HCLIN Hysteresis Control Voltage 0 < Ref-VHYSTP,N < 25 mV Linearity 25 mV < Ref-VHYSTP,N < 100 mV IHYS Hysteresis Leakage Current TA = 25°C TPD Propagation Delay (High to Low) Overdrive = 10 mV, CL = 10 pF 12 15 Overdrive = 100 mV, CL = 10 pF 4 7 μV/°C 1.8 TA = 25°C 1.2 TJ = TA 3 4 0.15 0.25 0.5 0.4 1 V mV/V 0.950 1.2 nA pA 1 TJ = TA nA 3 4 nA μs REFERENCE VO Reference Voltage TCVREF/° SOIC 2.043 2.048 2.053 VSSOP 2.043 V 2.048 2.056 Line Regulation VCC = 2.7 V to 12 V 14 80 V Load Regulation IOUT = 0 to 1 mA 0.2 0.5 mV/mA Temperature Coefficient −40°C to 125°C μV/V 55 ppm/°C C VN (1) (2) (3) (4) (5) 6 Output Noise Voltage 0.1 Hz to 10 Hz 80 μVPP 10 Hz to 10 kHz 100 μVRMS Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very limited self-heating of the device such that TJ = TA. No ensured specification of parametric performance is indicated in the electrical tables under conditions of internal self-heating where TJ > TA. Limits are 100% production tested at 25°C. Limits over the operating temperature range are specified through correlations using statistical quality control (SQC) method. Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary over time and will also depend on the application and configuration. The typical values are not tested and are not ensured on shipped production material. Offset voltage average drift determined by dividing the change in VOS at temperature extremes, by the total temperature change. Positive current corresponds to current flowing into the device. Submit Documentation Feedback Copyright © 2007–2015, Texas Instruments Incorporated Product Folder Links: LMP7300 LMP7300 www.ti.com SNOSAT7G – AUGUST 2007 – REVISED OCTOBER 2015 6.7 Electrical Characteristics: 12-V Unless otherwise specified, all limits are ensured for TA = 25°C, V+ = 12 V, V− = 0 V, and VCM = V+/2, RPULLUP = 100 kΩ, CLOAD = 10 pF. (1) PARAMETER IS Supply Current TEST CONDITIONS RPULLUP = Open MIN TA = 25°C TYP MAX 11 14 TJ = TA 20 UNIT µA COMPARATOR VCM = V+/2 SOIC VOS Input Offset Voltage VCM = V+/2 VSSOP TA = 25°C ±0.08 TJ = TA ±0.75 ±2 TA = 25°C ±0.08 TJ = TA ±1 ±2.2 TCVOS Input Offset Average Drift See (2) IB Input Bias Current (3) |VID| > 2.5 V IOS Input Offset Current CMRR Common Mode Rejection Ratio 1 V ≤ VCM ≤ 12 V 80 100 PSRR Power Supply Rejection Ratio V+ = 2.7 V to 12 V 80 100 VOL Output Voltage Low ILOAD = 10 mA ILEAK Output Leakage Current Comparator Output in High State HCLIN Hysteresis Control Voltage Linearity 0 < Ref-V+HYSTP, N < 25 mV IHYS Hysteresis Leakage Current TPD Propagation Delay (High to Low) 1.2 TJ = TA 3 4 0.15 0.25 0.5 dB TJ = TA V pA 1 1.2 nA 0.4 mV/V 0.95 TA = 25°C nA dB 1 25 mV < Ref-V+HYSTP, N < 100 mV mV μV/°C 1.8 TA = 25°C mV 3 4 Overdrive = 10 mV, CL = 10 pF 11 15 Overdrive = 100 mV, CL = 10 pF 3.5 6.8 nA μs REFERENCE VO Reference Voltage TCVREF/° TJ = 25°C SOIC 2.043 2.048 2.053 TJ = 25°C VSSOP 2.043 2.048 2.056 (1) (2) (3) V Line Regulation VCC = 2.7 V to 12 V 14 80 μV/V Load Regulation IOUT = 0 to 1 mA 0.2 0.5 mV/m A Temperature Coefficient −40°C to 125°C 55 ppm/° C C VN V Output Noise Voltage 0.1 Hz to 10 Hz 80 μVPP 10 Hz to 10 kHz 100 μVRMS Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very limited self-heating of the device such that TJ = TA. No ensured specification of parametric performance is indicated in the electrical tables under conditions of internal self-heating where TJ > TA. Offset voltage average drift determined by dividing the change in VOS at temperature extremes, by the total temperature change. Positive current corresponds to current flowing into the device. Submit Documentation Feedback Copyright © 2007–2015, Texas Instruments Incorporated Product Folder Links: LMP7300 7 LMP7300 SNOSAT7G – AUGUST 2007 – REVISED OCTOBER 2015 www.ti.com 6.8 Typical Characteristics 20 0.5 + OUTPUT LOW VOLTAGE (V) SUPPLY CURRENT (PA) V = 12V 125°C 15 85°C 25°C 10 -40°C 5 0 2 4 6 8 10 0.4 125°C 0.3 85°C 0.2 -40°C 0.1 25°C 0 0 12 2 SUPPLY VOLTAGE (V) Figure 1. Supply Current vs Supply Voltage + OUTPUT LOW VOLTAGE (V) OUTPUT LOW VOLTAGE (V) 10 V = 2.7V 0.4 125°C 0.3 85°C 0.2 -40°C 0.1 25°C 0 2 4 6 8 0.4 125°C 0.3 85°C 0.2 -40°C 0.1 25°C 0 0 10 2 LOAD CURRENT (mA) 4 6 8 10 LOAD CURRENT (mA) Figure 3. Output Low Voltage vs Load Current Figure 4. Output Low Voltage vs Load Current 2.052 2.050 + VREF UNLOADED V = 12V 2.050 REFERENCE VOLTAGE (V) REFERENCE VOLTAGE (V) 8 0.5 + V = 5V -40°C 25°C 2.048 85°C 125°C 2.046 2.044 2 4 6 8 10 12 -40°C 25°C 2.049 2.048 85°C 2.047 125°C 2.046 0 SUPPLY VOLTAGE (V) 0.5 1 1.5 2 SOURCE CURRENT (mA) Figure 5. Reference Voltage vs Supply Voltage 8 6 Figure 2. Output Low Voltage vs Load Current 0.5 0 4 LOAD CURRENT (mA) Figure 6. Reference Voltage vs Source Current Submit Documentation Feedback Copyright © 2007–2015, Texas Instruments Incorporated Product Folder Links: LMP7300 LMP7300 www.ti.com SNOSAT7G – AUGUST 2007 – REVISED OCTOBER 2015 Typical Characteristics (continued) 2.050 2.050 + + V = 2.7V -40°C 25°C 2.049 REFERENCE VOLTAGE (V) REFERENCE VOLTAGE (V) V = 2.7V 2.048 85°C 2.047 125°C 2.049 -40°C 25°C 2.048 85°C 2.047 125°C 2.046 0 50 100 150 200 2.046 250 0 SINK CURRENT (PA) 0.5 1 1.5 SOURCE CURRENT (mA) Figure 7. Reference Voltage vs Sink Current Figure 8. Reference Voltage vs Source Current 30 30 + V = 5V + 25 20 15 -40°C 25°C 85°C 5 0 25 PROPAGATION DELAY (Ps) PROPAGATION DELAY (Ps) V = 2.7V 10 20 15 10 -40°C 20 40 60 80 25°C 85°C 5 125°C 0 2 0 100 125°C 20 40 0 60 80 100 OVERDRIVE VOLTAGE (mV) OVERDRIVE VOLTAGE (mV) Figure 9. Propagation Delay vs Overdrive Voltage Figure 10. Propagation Delay vs Overdrive Voltage 30 + PROPAGATION DELAY (Ps) V = 12V CL = 10 pF 25 20 15 10 -40°C 25°C 85°C 5 0 0 125°C 20 40 60 80 100 OVERDRIVE VOLTAGE (mV) Figure 11. Propagation Delay vs Overdrive Voltage Submit Documentation Feedback Copyright © 2007–2015, Texas Instruments Incorporated Product Folder Links: LMP7300 9 LMP7300 SNOSAT7G – AUGUST 2007 – REVISED OCTOBER 2015 www.ti.com 7 Detailed Description 7.1 Overview The LMP7300 device is a unique combination of micropower and precision. The open collector comparator has low offset, high CMRR, high PSRR, programmable hysteresis and microamp supply current. The precision 2.048V reference provides a DAC or ADC with an accurate binary divisible voltage. The comparator and reference combination forms an ideal single IC solution for low power sensor or portable applications. 7.2 Functional Block Diagram V+ INP + OUT INN HYSTP GND V+ 2.048 V VREF HYSTN GND 7.3 Feature Description 7.3.1 Voltage Reference The reference output voltage is a band gap derived 2.048 V that is trimmed to achieve typically 0.2% accuracy over the full operating temperature range of −40°C to 125°C. The trim procedure employs a curvature correction algorithm to compensate for the base emitter thermal nonlinearity inherent in band gap design topologies. The reference accuracy and the set resistor tolerance determine the magnitude and precision of the programmable hysteresis. In situations where reference noise filtering is required, TI recommends a 5-µF capacitor in series with a 190-Ω resistor to ground. 7.3.2 Comparator 7.3.2.1 Output Stage The comparator employs an open collector output stage that can switch microamp loads for micropower precision threshold detection to applications requiring activating a solenoid, a lamp, or an LED. The wired-OR type output easily interfaces to TTL, CMOS, or multiple outputs, as in a window comparator application, over a range of 0.5 V to 12 V. The output is capable of driving greater than 10-mA output current and yet maintaining a saturation voltage less than 0.4 V over temperature. The supply current increases linearly when driving heavy loads, so TI recommends a pullup resistor of 100 kΩ or greater for micropower applications. 7.3.2.2 Fault Detection Rate The user’s choice of a pullup resistor and capacitive load determines the minimum response time and the event detection rate. By optimizing overdrive, the pullup resistor and capactive load fault update rates of 200 kHz to 250 kHz or greater can be achieved. 10 Submit Documentation Feedback Copyright © 2007–2015, Texas Instruments Incorporated Product Folder Links: LMP7300 LMP7300 www.ti.com SNOSAT7G – AUGUST 2007 – REVISED OCTOBER 2015 Feature Description (continued) 7.3.3 Hysteresis False triggering on noise coupled into the signal path is a common problem for comparator based threshold detectors. One of the most effective solutions is to add hysteresis. Hysteresis is a circuit signal path characteristic where an amplitude delay is introduced to the normal input. Positive hysteresis forces the signal to pass the normal switch point before the output makes a low to high transition while negative hysteresis does the opposite. This is a memory effect. The comparator behaves differently based on which direction the signal is going. The LM7300 has been designed with a unique way of introducing hysteresis. The set points are completely independent of each other, the power supply, and the input or output conditions. The HYSTP pin sets positive hysteresis and the HYSTN pin sets the negative hysteresis in a simple way using two resistors. The pins can be tied together for the same hysteresis or tied to separate voltage taps for asymmetric hysteresis, or tied to the reference for no hysteresis. When the precision reference is used to drive the voltage tap resistor divider precise, stable threshold levels can be obtained. The maximum recommended hysteresis is about 130 mV. This places the HYSTP and HYSTN pin voltages at VREF – 130 mV, which is approximately the center of their input common mode range at 2.7 V. For the typical example, a differential input signal voltage, VIN, is applied between INP and INN, the noninverting and inverting inputs of the comparator. A DC switch or threshold voltage, VTH, is set on the negative input to keep the output off when the signal is above and on when it goes below this level. For a precision threshold tie the INN pin to VREF. With the output, off the circuit is in the minimum power state. Figure 13 through Figure 21 demonstrate the different configurations for setting the upper threshold VIH and the lower threshold VIL and their relationship to the input trip point VREF, by the following formulas. æ R1 ö VIL = VREF - VREF ç ÷ è R1 + R2 ø æ R1 ö VIH = VREF + VREF ç ÷ è R1 + R2 ø (1) + V INP + - VIN INN RPULLUP 1 M: + OUT - HYSTP HYSTN VREF RP1 1.47 k: 1% RP2 1 M: 1% GND + V 2.048V RN1 4.91 k: 1% RN2 1 M: 1% GND Figure 12. Typical Micropower Application to Set Asymmetric Positive and Negative Hysteresis of −10 mV, 3 mV Submit Documentation Feedback Copyright © 2007–2015, Texas Instruments Incorporated Product Folder Links: LMP7300 11 LMP7300 SNOSAT7G – AUGUST 2007 – REVISED OCTOBER 2015 www.ti.com Feature Description (continued) VOUT 1 OUTPUT STATE -10 mV +3 mV VIN 0 VIL VIH VREF VIL = VREF -10 mV VIH = VREF +3 mV Figure 13. Typical Micropower Application to Set Asymmetric Positive and Negative Hysteresis of −10 mV, 3 mV When VID = 0, INN = INP = VTH Figure 15 shows the configuration with no hysteresis when the HYSTP and HYSTN pins are connected together to VREF. TI does not recommend this configuration because it has the highest level of false triggers due to the system noise. + V INP + - VIN INN RPULLUP 1 M: + OUT - HYSTP HYSTN VREF GND V+ 2.048V GND Figure 14. Typical Configuration for No Hysteresis VOUT 1 OUTPUT STATE 0 VIN VREF Figure 15. Typical Configuration for No Hysteresis Figure 17 shows the configuration with symmetric hysteresis when the HYSTP and HYSTN pins are connected to the same voltage that is less than VREF. The two trip points set a hysteresis band around the input threshold voltage VREF, such that the positive band is equal to the negative band. This configuration controls the false triggering mentioned in Figure 15. For precise level detection applications, TI recommends symmetric hysteresis values less than 5 mV to 10 mV. 12 Submit Documentation Feedback Copyright © 2007–2015, Texas Instruments Incorporated Product Folder Links: LMP7300 LMP7300 www.ti.com SNOSAT7G – AUGUST 2007 – REVISED OCTOBER 2015 Feature Description (continued) + V INP + - VIN RPULLUP 1 M: + OUT INN - HYSTP GND HYSTN VREF V + 2.048V R1 2.45 k: 1% R2 1 M: 1% GND Figure 16. Symmetric Hysteresis ±5 mV VOUT 1 OUTPUT STATE 10 mV 0 VIN VIL VREF VIH Figure 17. Symmetric Hysteresis ±5 mV Figure 19 shows the case for negative hysteresis by biasing only the HYSN pin to a voltage less than VREF. + V INP + - VIN INN RPULLUP 1 M: + OUT - HYSTP HYSTN VREF GND + V 2.048V RN1 4.91 k: 1% RN2 1 M: 1% GND Figure 18. Typical Configuration for Negative Hysteresis = −10 mV Submit Documentation Feedback Copyright © 2007–2015, Texas Instruments Incorporated Product Folder Links: LMP7300 13 LMP7300 SNOSAT7G – AUGUST 2007 – REVISED OCTOBER 2015 www.ti.com Feature Description (continued) VOUT 1 OUTPUT STATE 0 VIN VREF VIL Figure 19. Typical Configuration for Negative Hysteresis = −10 mV The case for setting only a positive hysteresis is demonstrated in Figure 21. + V INP + - VIN RPULLUP 1 M: + OUT INN - HYSTP GND HYSTN VREF + V 2.048V RP1 4.91 k: 1% GND RP2 1 M: 1% Figure 20. Connections for Positive Hysteresis = 10 mV VOUT 1 OUTPUT STATE 0 VIN VREF VIH Figure 21. Connections for Positive Hysteresis = 10 mV In the general case, as demonstrated with both positive and negative hysteresis bands in Figure 22, noise within these bands has no effect on the state of the comparator output. In Example 1 the noise is well behaved and in band. The output is clean and well behaved. In Example 2, a significant amount of out of band noise is present; however, due to hysteresis no false triggers occur on the rising positive or falling negative edges. The hysteresis forces the signal level to move higher or lower before the output is set to the opposite state. 14 Submit Documentation Feedback Copyright © 2007–2015, Texas Instruments Incorporated Product Folder Links: LMP7300 LMP7300 www.ti.com SNOSAT7G – AUGUST 2007 – REVISED OCTOBER 2015 Feature Description (continued) VOUT V POSITIVE TRIP POINTS + VOUT VIH VHYSTP VTH VHYSTN VIL HYSTERESIS (DEAD) BAND GND TIME VIN NEGATIVE TRIP POINTS EXAMPLE 1 EXAMPLE 2 Figure 22. Output Response With Input Noise Less than Hysteresis Band 7.3.3.1 How Much Hysteresis Is Correct? An effective way of determining the minimum hysteresis necessary for clean switching is to decrease the amount of hysteresis until false triggering is observed, and then use a multiple of say three times that amount of hysteresis in the final circuit. This is most easily accomplished in the breadboard phase by making R1 and R2 potentiometers. For applications near or above 100°C, TI recommends a minimum of 5-mV hysteresis due to peaking of the LMP7300 noise sensitivity at high temperatures. 7.4 Device Functional Modes The LMP7300 device may be used as a voltage reference or as a comparator with HIGH and LOW output states. A LOW output will occur when the noninverting input (INP) is less than the inverting input (INN). A HIGH output will occur when the noninverting input (INP) is greater than the inverting input (INN). Submit Documentation Feedback Copyright © 2007–2015, Texas Instruments Incorporated Product Folder Links: LMP7300 15 LMP7300 SNOSAT7G – AUGUST 2007 – REVISED OCTOBER 2015 www.ti.com 8 Application and Implementation NOTE Information in the following applications sections is not part of the TI component specification, and TI does not warrant its accuracy or completeness. TI’s customers are responsible for determining suitability of components for their purposes. Customers should validate and test their design implementation to confirm system functionality. 8.1 Application Information The LMP7300 device may be used in a variety of applications including precision threshold detection, battery monitoring, battery management systems, and zero crossing detectors. The externally controlled hysteresis functionality allows the user to determine how robust the device is against noise and false triggering. 8.2 Typical Applications 8.2.1 Window Comparator Figure 23 shows two LMP7300s configured as a micropower window detector in a temperature level detection application. USB POWER SOURCE 4.3V to 5.5V RT* 0.1 PF R2 19.6 k: 1% 1 M: INP INN HYSTP + - VHIGH TEMPERATURE FAULT OUT HYSTN C1 LMP7300 VREF 2.32 k: 1% R3 15.4 k: 1% * NTC Thermistor Such as: OMEGA #44008 30 k: @ 25°C 19.74 k: @ 35°C 46.67 k: @ 15°C 205 k: 1% 0.1 PF + INP R1 61.9 k: 1% R4 46.4 k: 1% V 1 M: + INN HYSTP HYSTN C2 OUT VLOW TEMPERATUE FAULT LMP7300 VREF 2.32 k: 1% 205 k: 1% Figure 23. Temperature-Controlled Window Detector to Monitor Ambient Temperature 16 Submit Documentation Feedback Copyright © 2007–2015, Texas Instruments Incorporated Product Folder Links: LMP7300 LMP7300 www.ti.com SNOSAT7G – AUGUST 2007 – REVISED OCTOBER 2015 Typical Applications (continued) 8.2.1.1 Design Requirements Figure 23 monitors the ambient temperature change. If the temperature rises outside the 15°C to 35°C window, either comparator 1 for high temperature, or comparator 2 for low temperature, sets low, indicating a fault condition has occurred. The open collector outputs are pulled up separately but can be wire-OR’d for a single fault indication. If the temperature returns inside the window, it must overcome the 22-mV asymmetric hysteresis band established on either comparator. For the high side, the temperature must drop below 34°C, and for the low side the temperature must rise above 16°C for the outputs to reset high and remove the fault indication. The temperature is sensed by a 30 kΩ @ 25°C Omega Precision NTC Thermistor #44008 (±0.2% tol). 8.2.1.2 Detailed Design Procedure To set a fixed temperature threshold, the thermistor resistance ( RT*) must first be approximated at the specified temperatures. For a temperature of 35°C, RT* =19.74 kΩ from Figure 23. A resistor divider with R1 =61.9 kΩ and VREF can be formed on INN of comparator 1 to set the high side tripping voltage according to Equation 1. An equivalent resistor divider must be formed on INP of comparator 1 by using the nearest 1% matching resistors of R2=19.6 kΩ and a combination of R3=15.4 kΩ and R4=46.4 kΩ. NOTE a combination of resistors was chosen with R4=46.4 kΩ to set the low side tripping threshold where RT* = 46.67 kΩ at 15°C . A similar technique can be applied for comparator 2 to set the low side temperature of 15°C. The total change in Volts can be computed by subtracting the two tripping thresholds to get a range of approximately 390 mV. Given a total temperature change of 20°C, the hysteresis should be set to 19.5 mV to give an equivalent hysteresis of 1°C. A hysteresis value of 22.9 mV is calculated through the resistor divider of VREF, 2.32 kΩ, and 205 kΩ. 8.2.1.3 Application Curve The results of the circuit shown in Figure 23 above can be plotted for various temperatures. A temperature change of ±100°C/hour was chosen to demonstrate the functionality. Figure 24 shows that when the temperature drops to 15°C the output of comparator 2 trips, which signifies a low temperature fault. When the temperature returns and crosses the 22-mV hysteresis, comparator 2 returns to its normally high-output state. Similarly, when the temperature reaches 35°C, comparator 1 trips and signifies a high temperature fault. When the temperature returns below the hysteresis, comparator 1 returns to its normally high-output state. Figure 24. Window Detector Output Response Submit Documentation Feedback Copyright © 2007–2015, Texas Instruments Incorporated Product Folder Links: LMP7300 17 LMP7300 SNOSAT7G – AUGUST 2007 – REVISED OCTOBER 2015 www.ti.com Typical Applications (continued) 8.2.2 Precision High-Temperature Switch The LMP7300 brings accuracy and stability to simple sensor switch applications. Figure 26 shows the LMP7300 setup in a high temperature switch configuration. The input bridge is used to establish the temperature at which the LMP7300 will trip and the temperature at which it resets. VREF VCC (2.7V ± 12V) RTH RADJ 3.24 k: 0.1 PF T VREF RSET 78.7 k: C1 6.8 PF RSET 78.7 k: RH1 1.44 k: + - 1 M: VCC LMP7300 HYSTN HYSTP GND RH2 205 k: Figure 25. Precision High-Temperature Switch 8.2.2.1 Design Requirements In Figure 25, the input bridge establishes the trip point at 85°C and the reset temperature at 80°C. The comparator is set up with positive hysteresis of 14.3 mV and no negative hysteresis. When the temperature is rising, it trips at 85°C. The 14.3-mV hysteresis allows the temperature to drop to 80°C before reset. The temperature sensor used is an Omega 44008 Precision NTC Thermistor. The 44008 has an accuracy of ±0.2°C. The resistance at 85°C is 3270.9 Ω and at 80°C is 3840.2 Ω. The trip voltage threshold is established by one half of the bridge, which is the ratio of RADJ and RSET. The input signal bias is set by the second half, which is the ratio of the thermistor resistance RTH and RSET. The resistance values are chosen for approximately 50-µA bridge current to minimize the power in the thermistor. The thermistor specification states it has a 1°C/mW dissipation error. The reference voltage establishes the supply voltage for the bridge to make the circuit independent of supply voltage variation. Capacitor C1 establishes a low-frequency pole at FCORNER = 1/(2πC1 × 2(RSET//RADJ)). With the resistance values chosen C1 should be selected for Fc < 10 Hz. This will limit the thermal noise in the bridge. The accuracy of the circuit can be calculated from the nearest resistance values chosen. For 1% resistors RADJ is 3.24 kΩ, and RSET is 78.7 kΩ. The bridge gain becomes 2.488 mV/C at 85°C. In general, the higher the bridge current is allowed to be, the higher the bridge gain will be. The actual trip point found during simulation is 85.3°C and the reset point is 80.04°C. With the values chosen the worst case trip temperature uncertainty is ±1.451°C and the reset uncertainty is ±1.548°C. Accuracy could be maximized with resistors chosen to 0.1% values, 0.1% tolerance and by using the 0.1% model of the Omega 44008 thermistor. 8.2.3 Micropower Precision-Battery Low-Voltage Detector The ability of the LMP7300 device to operate at very low supply voltages makes it an ideal choice for low battery detection application in portable equipment. The circuit in Figure 26 performs the function of low voltage threshold detection in a battery monitor application. 18 Submit Documentation Feedback Copyright © 2007–2015, Texas Instruments Incorporated Product Folder Links: LMP7300 LMP7300 www.ti.com SNOSAT7G – AUGUST 2007 – REVISED OCTOBER 2015 Typical Applications (continued) VBATT The LED turns on when VBATT x R2 1 M: 1% so, if + INP INN HYSTP HYSTN V LED + - GND OUT VREF VBATT R2 R1 + R2 d VREF, = D and R2 is known, § ¨¨ © R1 318.4 k: 1% R5 § ¨ © 0.1 PF § VBATT - VREF §1 - D = R2 ¨ then, R1 = R2 ¨ D © VREF © VREF As an example: R3 9.86 k: 1% VREF = 2.048V, VBATTLOW = +2.7V, R2 = 1 M: then R1 = 318.4 k: R4 1 M: 1% Figure 26. Battery Voltage Monitor for 3-Cell Discharge Voltage 8.2.3.1 Design Requirements The circuit in Figure 26 is configured to detect the low voltage threshold detection in a 3 cell, 0.9-V discharge voltage, battery monitor application. R1 and R2 are chosen to set the inverting input voltage equal to the noninverting input voltage when the battery voltage is equal to the minimum operating voltage of the system. Here, the very precise reference output voltage is directly connected to the noninverting input on the comparator and sets an accurate threshold voltage. The hysteresis is set to 0-mV negative and 20-mV positive. The output is off for voltages higher than the minimum VBATT, and turns on when the circuit detects a minimum battery voltage condition. 9 Power Supply Recommendations Even in low-frequency applications, the LMP7300 can have internal transients which are extremely quick. For this reason, bypassing the power supply with 1-μF to ground will provide improved performance; the supply bypass capacitor should be placed as close as possible to the supply pin and have a solid connection to ground. The bypass capacitors should have a low ESR. Submit Documentation Feedback Copyright © 2007–2015, Texas Instruments Incorporated Product Folder Links: LMP7300 19 LMP7300 SNOSAT7G – AUGUST 2007 – REVISED OCTOBER 2015 www.ti.com 10 Layout 10.1 Layout Guidelines A good PCB layout is always important to reduce output to input coupling. Positive feedback noise reduces performance. For the LMP7300, output coupling is minimized by the unique package pinout. The output is kept away from the noninverting and inverting inputs, the reference and the hysteresis pins. 10.2 Layout Example The following section shows an example schematic and layout for the LMP7300MA 8-pin SOIC package. J3 TP1 R1 1 M: VIN BNC VCC VOH JP2 8 1 + - 6 J4 JP3 JP4 HYSTP 5 HYSTN J2 4 VREF TP4 HYSTN TP3 R8 OPEN C4 0.1 PF VCC VCC OUT BNC TP5 VOH VOH J5 LMP7300 7 HYSTP TP2 R9 1 M: GND 2 3 R3 OPEN C2 OPEN 5 PF C1 0.1 PF VCC JP1 R4 50 k: VREF R2 1 M: R6 50 k: R7 50 k: R5 1 M: R10 1 M: CREF OPEN J6 GND JP5 JP6 J1 VEE VEE VEE C6 OPEN 5 PF Figure 27. LMP7300MA-EVAL Schematic 20 Submit Documentation Feedback Copyright © 2007–2015, Texas Instruments Incorporated Product Folder Links: LMP7300 LMP7300 www.ti.com SNOSAT7G – AUGUST 2007 – REVISED OCTOBER 2015 Layout Example (continued) Figure 28. LMP7300MA-EVAL Layout Top View Figure 29. LMP7300MA-EVAL Layout Bottom View Submit Documentation Feedback Copyright © 2007–2015, Texas Instruments Incorporated Product Folder Links: LMP7300 21 LMP7300 SNOSAT7G – AUGUST 2007 – REVISED OCTOBER 2015 www.ti.com 11 Device and Documentation Support 11.1 Device Support 11.1.1 Development Support 11.1.1.1 Evaluation Boards Texas Instruments provides the following PCB boards as an aid in evaluating the LMP7300 performance in the 8pin SOIC package. For more information on the evaluation board, LMP7300MA-EVAL, of the LMP7300MA device option, see AN-1639 LMP7300 Single Precision Comparator With Reference Evaluation Boards (SOIC and VSSOP), SNOA491. 11.2 Community Resources The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use. TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help solve problems with fellow engineers. Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and contact information for technical support. 11.3 Trademarks E2E is a trademark of Texas Instruments. All other trademarks are the property of their respective owners. 11.4 Electrostatic Discharge Caution These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. 11.5 Glossary SLYZ022 — TI Glossary. This glossary lists and explains terms, acronyms, and definitions. 12 Mechanical, Packaging, and Orderable Information The following pages include mechanical, packaging, and orderable information. This information is the most current data available for the designated devices. This data is subject to change without notice and revision of this document. For browser-based versions of this data sheet, refer to the left-hand navigation. 22 Submit Documentation Feedback Copyright © 2007–2015, Texas Instruments Incorporated Product Folder Links: LMP7300 PACKAGE OPTION ADDENDUM www.ti.com 30-Jul-2015 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan Lead/Ball Finish MSL Peak Temp (2) (6) (3) Op Temp (°C) Device Marking (4/5) LMP7300MA/NOPB ACTIVE SOIC D 8 95 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 125 LMP73 00MA LMP7300MAX/NOPB ACTIVE SOIC D 8 2500 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 125 LMP73 00MA LMP7300MM/NOPB ACTIVE VSSOP DGK 8 1000 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 125 C31A LMP7300MME/NOPB ACTIVE VSSOP DGK 8 250 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 125 C31A LMP7300MMX/NOPB ACTIVE VSSOP DGK 8 3500 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 125 C31A (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. (4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device. (5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation of the previous line and the two combined represent the entire Device Marking for that device. Addendum-Page 1 Samples PACKAGE OPTION ADDENDUM www.ti.com 30-Jul-2015 (6) Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish value exceeds the maximum column width. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. 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Addendum-Page 2 PACKAGE MATERIALS INFORMATION www.ti.com 3-Aug-2015 TAPE AND REEL INFORMATION *All dimensions are nominal Device Package Package Pins Type Drawing SPQ Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) B0 (mm) K0 (mm) P1 (mm) W Pin1 (mm) Quadrant LMP7300MAX/NOPB SOIC D 8 2500 330.0 12.4 6.5 5.4 2.0 8.0 12.0 Q1 LMP7300MM/NOPB VSSOP DGK 8 1000 178.0 12.4 5.3 3.4 1.4 8.0 12.0 Q1 LMP7300MME/NOPB VSSOP DGK 8 250 178.0 12.4 5.3 3.4 1.4 8.0 12.0 Q1 LMP7300MMX/NOPB VSSOP DGK 8 3500 330.0 12.4 5.3 3.4 1.4 8.0 12.0 Q1 Pack Materials-Page 1 PACKAGE MATERIALS INFORMATION www.ti.com 3-Aug-2015 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) LMP7300MAX/NOPB SOIC D 8 2500 367.0 367.0 35.0 LMP7300MM/NOPB VSSOP DGK 8 1000 210.0 185.0 35.0 LMP7300MME/NOPB VSSOP DGK 8 250 210.0 185.0 35.0 LMP7300MMX/NOPB VSSOP DGK 8 3500 367.0 367.0 35.0 Pack Materials-Page 2 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, enhancements, improvements and other changes to its semiconductor products and services per JESD46, latest issue, and to discontinue any product or service per JESD48, latest issue. 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