GE BC327 Small signal transistors (pnp) Datasheet

BC327, BC328
Small Signal Transistors (PNP)
TO-92
FEATURES
.142 (3.6)
min. .492 (12.5) .181 (4.6)
.181 (4.6)
♦ PNP Silicon Epitaxial Planar Transistors for
switching and amplifier applications. Especially suit-able for AF-driver stages and
low-power output stages.
♦ These types are also available subdivided
into three groups -16, -25, and -40, according
to their DC current gain. As complementary
types, the NPN transistors BC337 and BC338 are
recommended.
max. ∅ .022 (0.55)
♦ On special request, these transistors are also
.098 (2.5)
manufactured in the pin configuration TO-18.
E
C
MECHANICAL DATA
B
Case: TO-92 Plastic Package
Weight: approx. 0.18 g
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol
Value
Unit
Collector-Emitter Voltage
BC327
BC328
–VCES
–VCES
50
30
V
V
Collector-Emitter Voltage
BC327
BC328
–VCEO
–VCEO
45
25
V
V
Emitter-Base Voltage
–VEBO
5
V
Collector Current
–IC
800
mA
Peak Collector Current
–ICM
1
A
Base Current
–IB
100
mA
Power Dissipation at Tamb = 25 °C
Ptot
6251)
mW
Junction Temperature
Tj
150
°C
Storage Temperature Range
TS
–65 to +150
°C
1)
4/98
Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case.
BC327, BC328
ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol
Min.
Typ.
Max.
Unit
hFE
hFE
hFE
100
160
250
160
250
400
250
400
630
–
–
–
hFE
hFE
hFE
60
100
170
130
200
320
–
–
–
–
–
–
Thermal Resistance Junction to Ambient Air
RthJA
–
–
2001)
K/W
Collector-Emitter Cutoff Current
at –VCE = 45 V
at –VCE = 25 V
at –VCE = 45 V, Tamb = 125 °C
at –VCE = 25 V, Tamb = 125 °C
BC327
BC328
BC327
BC328
–ICES
–ICES
–ICES
–ICES
–
–
–
–
2
2
–
–
100
100
10
10
nA
nA
µA
µA
BC327
BC328
–
V(BR)CEO
–
V(BR)CEO
45
25
–
–
–
–
V
V
BC327
BC328
–
V(BR)CES
–
V(BR)CES
50
30
–
–
–
–
V
V
Emitter-Base Breakdown Voltage
at –IE = 0.1 mA
–
V(BR)EBO
5
–
–
V
Collector Saturation Voltage
at –IC = 500 mA, –IB = 50 mA
–VCEsat
–
–
0.7
V
Base-Emitter Voltage
at –VCE = 1 V, –IC = 300 mA
–VBE
–
–
1.2
V
Gain-Bandwidth Product
at –VCE = 5 V, –IC = 10 mA, f = 50 MHz
fT
–
100
–
MHz
Collector-Base Capacitance
at –VCB = 10 V, f = 1 MHz
CCBO
–
12
–
pF
DC Current Gain
at –VCE = 1 V, –IC = 100 mA
Current Gain Group-16
-25
-40
at –VCE = 1 V, –IC = 300 mA
Current Gain Group-16
-25
-40
Collector-Emitter Breakdown Voltage
at –IC = 10 mA
Collector-Emitter Breakdown Voltage
at –IC = 0.1 mA
1)
Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case.
RATINGS AND CHARACTERISTIC CURVES BC327, BC328
RATINGS AND CHARACTERISTIC CURVES BC327, BC328
RATINGS AND CHARACTERISTIC CURVES BC327, BC328
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