CY62157E MoBL® 8-Mbit (512 K × 16) Static RAM 8-Mbit (512 K × 16) Static RAM Features addresses are not toggling. Place the device into standby mode when deselected (CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH). The input or output pins (I/O0 through I/O15) are placed in a high impedance state when: ■ Very high speed: 45 ns ❐ Industrial: –40 °C to +85 °C ❐ Automotive-E: –40 °C to +125 °C ■ Wide voltage range: 4.5 V–5.5 V ■ Ultra low standby power ❐ Typical standby current: 2 A ❐ Maximum standby current: 8 A (Industrial) ■ Ultra low active power ❐ Typical active current: 1.8 mA at f = 1 MHz ■ Ultra low standby power ■ Easy memory expansion with CE1, CE2 and OE features ■ Automatic power down when deselected ■ CMOS for optimum speed and power ■ Available in Pb-free 44-pin TSOP II and 48-ball VFBGA package ■ Deselected (CE1HIGH or CE2 LOW) ■ Outputs are disabled (OE HIGH) ■ Both Byte High Enable and Byte Low Enable are disabled (BHE, BLE HIGH) ■ Write operation is active (CE1 LOW, CE2 HIGH and WE LOW) To write to the device, take Chip Enable (CE1 LOW and CE2 HIGH) and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O0 through I/O7), is written into the location specified on the address pins (A0 through A18). If Byte High Enable (BHE) is LOW, then data from I/O pins (I/O8 through I/O15) is written into the location specified on the address pins (A0 through A18). To read from the device, take Chip Enable (CE1 LOW and CE2 HIGH) and Output Enable (OE) LOW while forcing the Write Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW, then data from the memory location specified by the address pins appear on I/O0 to I/O7. If Byte High Enable (BHE) is LOW, then data from memory appears on I/O8 to I/O15. See Truth Table on page 12 for a complete description of read and write modes. Functional Description The CY62157E is a high performance CMOS static RAM organized as 512K words by 16 bits. This device features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life (MoBL®) in portable applications. The device also has an automatic power down feature that significantly reduces power consumption when The CY62157E device is suitable for interfacing with processors that have TTL I/P levels. It is not suitable for processors that require CMOS I/P levels. Please see Electrical Characteristics on page 4 for more details and suggested alternatives. Logic Block Diagram ROW DECODER A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 CE2 • I/O8–I/O15 BHE 198 Champion Court A17 A18 A15 A16 WE A14 BHE I/O0–I/O7 COLUMN DECODER CE1 BLE Cypress Semiconductor Corporation Document Number: 38-05695 Rev. *I 512K x 16 RAM Array A11 A12 A13 Power Down Circuit SENSE AMPS DATA IN DRIVERS • OE BLE San Jose, CA 95134-1709 CE2 CE1 • 408-943-2600 Revised June 5, 2013 CY62157E MoBL® Contents Product Portfolio ..............................................................3 Pin Configurations ...........................................................3 Maximum Ratings .............................................................4 Operating Range ...............................................................4 Electrical Characteristics .................................................4 Capacitance ......................................................................5 Thermal Resistance ..........................................................5 AC Test Loads and Waveforms .......................................5 Data Retention Characteristics .......................................6 Data Retention Waveform ................................................6 Switching Characteristics ................................................7 Switching Waveforms ......................................................8 Document Number: 38-05695 Rev. *I Truth Table ......................................................................12 Ordering Information ......................................................13 Ordering Code Definitions .........................................13 Package Diagrams ..........................................................14 Acronyms ........................................................................16 Document Conventions .................................................16 Units of Measure .......................................................16 Document History Page .................................................17 Sales, Solutions, and Legal Information ......................18 Worldwide Sales and Design Support .......................18 Products ....................................................................18 PSoC Solutions .........................................................18 Page 2 of 18 CY62157E MoBL® Product Portfolio Power Dissipation Product Speed (ns) VCC Range (V) Range Operating ICC, (mA) f = 1 MHz Min Typ[1] Max f = fmax Standby, ISB2 (A) Typ[1] Max Typ[1] Max Typ[1] Max CY62157ELL Industrial 4.5 5.0 5.5 45 1.8 3 18 25 2 8 CY62157ELL Automotive 4.5 5.0 5.5 55 1.8 4 18 35 2 30 Pin Configurations Figure 1. 44-pin TSOP II pinout [2, 3] Figure 2. 48-ball VFBGA pinout [2] Top View Top View A4 A3 A2 A1 A0 CE I/O0 I/O1 I/O2 I/O3 VCC VSS I/O4 I/O5 I/O6 I/O7 WE A18 A17 A16 A15 A14 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 A5 A6 A7 OE BHE BLE I/O15 I/O14 I/O13 I/O12 VSS VCC I/O11 I/O10 I/O9 I/O8 A8 A9 A10 A11 A12 A13 1 2 3 4 5 6 BLE OE A0 A1 A2 CE2 A I/O8 BHE A3 A4 CE1 I/O0 B I/O9 I/O10 A5 A6 I/O1 I/O2 C VSS I/O11 A17 A7 I/O3 Vcc D VCC I/O12 NC A16 I/O4 Vss E I/O14 I/O13 A14 A15 I/O5 I/O6 F I/O15 NC A12 A13 WE I/O7 G A18 A8 A9 A10 A11 NC H Notes 1. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at VCC = VCC(typ), TA = 25 °C. 2. NC pins are not connected on the die. 3. The 44-pin TSOP II package has only one chip enable (CE) pin. Document Number: 38-05695 Rev. *I Page 3 of 18 CY62157E MoBL® Maximum Ratings Output Current into Outputs (LOW) ............................20 mA Exceeding maximum ratings may shorten the useful life of the device. User guidelines are not tested. Storage Temperature ............................. –65 °C to + 150 °C Ambient Temperature with Power Applied ........................................ –55 °C to + 125 °C Supply Voltage to Ground Potential .........................................................–0.5 V to 6.0 V DC Voltage Applied to Outputs in High Z State[4, 5] .........................................–0.5 V to 6.0 V Static Discharge Voltage (MIL-STD-883, Method 3015) .................................> 2001 V Latch up Current ....................................................> 200 mA Operating Range Device CY62157ELL Ambient Temperature Range Industrial VCC[6] –40 °C to +85 °C 4.5 V to 5.5 V Automotive –40 °C to +125 °C DC Input Voltage[4, 5] ......................................–0.5 V to 6.0 V Electrical Characteristics Over the Operating Range Parameter VOH Description Output HIGH Voltage Test Conditions VCC = 4.5 V VCC = 5.5 V IOH = –1 mA IOH = –0.1 mA 45 ns (Industrial) 55 ns (Automotive) Min Typ[7] Max Min Typ[7] Max 2.4 – – 2.4 – – – – – – 3.4 [8] 3.4 Unit V [8] – – 0.4 – – 0.4 V VOL Output LOW Voltage IOL = 2.1 mA VIH Input HIGH Voltage VCC = 4.5 V to 5.5 V 2.2 – VCC + 0.5 2.2 – VCC + 0.5 V VIL Input LOW Voltage VCC = 4.5 V to 5.5 V –0.5 – 0.8 –0.5 – 0.8 V IIX Input Leakage Current GND < VI < VCC –1 – +1 –4 – +4 A IOZ Output Leakage Current GND < VO < VCC, Output Disabled –1 – +1 –4 – +4 A ICC VCC Operating Supply Current f = fmax = 1/tRC – 18 25 – 18 35 mA – 1.8 3 – 1.8 4 f = 1 MHz VCC = VCC(max) IOUT = 0 mA CMOS levels ISB1 [9] Automatic CE Power Down Current – CMOS Inputs CE1 > VCC 0.2 V or CE2 < 0.2 V or (BHE and BLE) > VCC – 0.2 V, VIN > VCC – 0.2 V, VIN < 0.2 V, f = fmax (Address and Data Only), f = 0 (OE and WE), VCC = VCC(max) – 2 8 – 2 30 A ISB2 [9] Automatic CE Power Down Current – CMOS Inputs CE1 > VCC – 0.2 V or CE2 < 0.2 V or (BHE and BLE) > VCC – 0.2 V, VIN > VCC – 0.2 V or VIN < 0.2 V, f = 0, VCC = VCC(max) – 2 8 – 2 30 A Notes 4. VIL(min) = –2.0 V for pulse durations less than 20 ns for I < 30 mA. 5. VIH(max) = VCC + 0.75 V for pulse durations less than 20 ns. 6. Full device AC operation assumes a 100 s ramp time from 0 to VCC(min) and 200 s wait time after VCC stabilization. 7. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at VCC = VCC(typ), TA = 25 °C. 8. Please note that the maximum VOH limit doesnot exceed minimum CMOS VIH of 3.5 V. If you are interfacing this SRAM with 5 V legacy processors that require a minimum VIH of 3.5V, please refer to Application Note AN6081 for technical details and options you may consider. 9. Chip enables (CE1 and CE2) and byte enables (BHE and BLE) need to be tied to CMOS levels to meet the ISB1 / ISB2 / ICCDR spec. Other inputs can be left floating. Document Number: 38-05695 Rev. *I Page 4 of 18 CY62157E MoBL® Capacitance Parameter [10] Description CIN Input capacitance COUT Output capacitance Test Conditions Max TA = 25 °C, f = 1 MHz, VCC = VCC(typ) Unit 10 pF 10 pF Thermal Resistance Parameter [10] Description JA Thermal resistance (junction to ambient) JC Thermal resistance (junction to case) Test Conditions 44-pin TSOP II 48-ball VFBGA Unit Still Air, soldered on a 3 × 4.5 inch, two-layer printed circuit board 77 72 °C/W 13 8.86 °C/W AC Test Loads and Waveforms Figure 3. AC Test Loads and Waveforms VCC OUTPUT R1 3V 10% GND Rise Time = 1 V/ns R2 30 pF INCLUDING JIG AND SCOPE ALL INPUT PULSES 90% 90% 10% Fall Time = 1 V/ns Equivalent to: THEVENIN EQUIVALENT RTH OUTPUT V Parameters Values Unit R1 1800 R2 990 RTH 639 VTH 1.77 V Note 10. Tested initially and after any design or process changes that may affect these parameters. Document Number: 38-05695 Rev. *I Page 5 of 18 CY62157E MoBL® Data Retention Characteristics Over the Operating Range Parameter Description VDR VCC for Data Retention ICCDR[12] Data Retention Current tCDR [13] Chip Deselect to Data Retention Time tR [14] Operation Recovery Time Conditions VCC = 2 V, CE1 > VCC – 0.2 V or CE2 < 0.2 V or (BHE and BLE) > VCC – 0.2 V, VIN > VCC – 0.2 V or VIN < 0.2 V Min Typ [11] Max Unit 2 – – V Industrial – – 8 A Automotive – – 30 0 – – ns CY62157ELL-45 45 – – ns CY62157ELL-55 55 – – Data Retention Waveform Figure 4. Data Retention Waveform [15] DATA RETENTION MODE VCC VCC(min) tCDR VDR > 2 V VCC(min) tR CE1 or BHE.BLE or CE2 Notes 11. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at VCC = VCC(typ), TA = 25 °C. 12. Chip enables (CE1 and CE2) and byte enables (BHE and BLE) need to be tied to CMOS levels to meet the ISB1 / ISB2 / ICCDR spec. Other inputs can be left floating. 13. Tested initially and after any design or process changes that may affect these parameters. 14. Full device operation requires linear VCC ramp from VDR to VCC(min) > 100 s or stable at VCC(min) > 100 s. 15. BHE.BLE is the AND of both BHE and BLE. Deselect the chip by either disabling chip enable signals or by disabling both BHE and BLE. Document Number: 38-05695 Rev. *I Page 6 of 18 CY62157E MoBL® Switching Characteristics Over the Operating Range Parameter [16, 17] 45 ns (Industrial) Description Min 55 ns (Automotive) Max Min Max Unit Read Cycle tRC Read Cycle Time 45 – 55 – ns tAA Address to Data Valid – 45 – 55 ns tOHA Data Hold from Address Change 10 – 10 – ns tACE CE1 LOW and CE2 HIGH to Data Valid – 45 – 55 ns tDOE OE LOW to Data Valid – 5 – 25 – ns OE LOW to Low Z[18] 22 – – tLZOE 20 – ns 20 – ns 55 ns 55 – ns 20 ns Z[18, 19] tHZOE OE HIGH to High tLZCE CE1 LOW and CE2 HIGH to Low Z[18] Z[18, 19] 10 – tHZCE CE1 HIGH and CE2 LOW to High tPU CE1 LOW and CE2 HIGH to Power Up tPD CE1 HIGH and CE2 LOW to Power Down 0 – tDBE BLE/BHE LOW to Data Valid – Z[18] tLZBE BLE/BHE LOW to Low tHZBE Write Cycle[20] BLE/BHE HIGH to High Z[18, 19] 10 – tWC Write Cycle Time tSCE CE1 LOW and CE2 HIGH to Write End tAW Address Setup to Write End tHA Address Hold from Write End tSA 18 – 18 – 45 45 – 5 – 10 – 0 – – ns ns ns 18 10 – 45 – 55 – ns 35 35 – 40 40 – ns – ns 0 0 – ns – 0 0 – Address Setup to Write Start – ns tPWE WE Pulse Width 35 – 40 – ns tBW BLE/BHE LOW to Write End – ns Data Setup to Write End – 40 25 – tSD 35 25 – ns tHD Data Hold from Write End 0 – 0 – ns – 18 – – 20 – ns 10 Z[18, 19] tHZWE WE LOW to High tLZWE WE HIGH to Low Z[18] 10 – ns ns Notes 16. Test conditions for all parameters other than tri-state parameters assume signal transition time of 3 ns or less, timing reference levels of VCC(typ)/2, input pulse levels of 0 to VCC(typ), and output loading of the specified IOL/IOH as shown in the AC Test Loads and Waveforms on page 5. 17. AC timing parameters are subject to byte enable signals (BHE or BLE) not switching when chip is disabled. See application note AN13842 for further clarification. 18. At any temperature and voltage condition, tHZCE is less than tLZCE, tHZBE is less than tLZBE, tHZOE is less than tLZOE, and tHZWE is less than tLZWE for any device. 19. tHZOE, tHZCE, tHZBE, and tHZWE transitions are measured when the outputs enter a high impedance state. 20. The internal write time of the memory is defined by the overlap of WE, CE1 = VIL, BHE, BLE, or both = VIL, and CE2 = VIH. All signals must be active to initiate a write and any of these signals can terminate a write by going inactive. The data input setup and hold timing must be referenced to the edge of the signal that terminates the write. Document Number: 38-05695 Rev. *I Page 7 of 18 CY62157E MoBL® Switching Waveforms Figure 5. Read Cycle No. 1 (Address Transition Controlled) [21, 22] tRC RC ADDRESS tOHA DATA OUT tAA PREVIOUS DATA VALID DATA VALID Figure 6. Read Cycle No. 2 (OE Controlled) [22, 23] ADDRESS tRC CE1 tPD tHZCE CE2 tACE BHE/BLE tDBE tHZBE tLZBE OE tHZOE tDOE DATA OUT tLZOE HIGH IMPEDANCE HIGH IMPEDANCE DATA VALID tLZCE VCC SUPPLY CURRENT tPU 50% 50% ICC ISB Notes 21. The device is continuously selected. OE, CE1 = VIL, BHE, BLE or both = VIL, and CE2 = VIH. 22. WE is HIGH for read cycle. 23. Address valid before or similar to CE1, BHE, BLE transition LOW and CE2 transition HIGH. Document Number: 38-05695 Rev. *I Page 8 of 18 CY62157E MoBL® Switching Waveforms (continued) Figure 7. Write Cycle No. 1 (WE Controlled) [24, 25, 26] tWC ADDRESS tSCE CE1 CE2 tAW WE tPWE tBW BHE/BLE tHD OE DATA I/O tHA tSA tSD NOTE 27 VALID DATA tHZOE Notes 24. The internal write time of the memory is defined by the overlap of WE, CE1 = VIL, BHE, BLE, or both = VIL, and CE2 = VIH. All signals must be active to initiate a write and any of these signals can terminate a write by going inactive. The data input setup and hold timing must be referenced to the edge of the signal that terminates the write. 25. Data I/O is high impedance if OE = VIH. 26. If CE1 goes HIGH and CE2 goes LOW simultaneously with WE = VIH, the output remains in a high impedance state. 27. During this period, the I/Os are in output state. Do not apply input signals. Document Number: 38-05695 Rev. *I Page 9 of 18 CY62157E MoBL® Switching Waveforms (continued) Figure 8. Write Cycle No. 2 (CE1 or CE2 Controlled) [28, 29, 30] tWC ADDRESS tSCE CE1 CE2 tSA tAW tHA tPWE WE tBW BHE/BLE OE DATA I/O tSD NOTE 31 tHD VALID DATA tHZOE Notes 28. The internal write time of the memory is defined by the overlap of WE, CE1 = VIL, BHE, BLE, or both = VIL, and CE2 = VIH. All signals must be active to initiate a write and any of these signals can terminate a write by going inactive. The data input setup and hold timing must be referenced to the edge of the signal that terminates the write. 29. Data I/O is high impedance if OE = VIH. 30. If CE1 goes HIGH and CE2 goes LOW simultaneously with WE = VIH, the output remains in a high impedance state. 31. During this period, the I/Os are in output state. Do not apply input signals. Document Number: 38-05695 Rev. *I Page 10 of 18 CY62157E MoBL® Switching Waveforms (continued) Figure 9. Write Cycle No. 3 (WE Controlled, OE LOW) [32] tWC ADDRESS tSCE CE1 CE2 tBW BHE/BLE tAW tHA tSA tPWE WE tSD DATA I/O NOTE 33 tHD VALID DATA tLZWE tHZWE Figure 10. Write Cycle No. 4 (BHE/BLE Controlled, OE LOW) [32] tWC ADDRESS CE1 CE2 tSCE tAW tHA tBW BHE/BLE tSA tPWE WE tSD DATA I/O NOTE 33 tHD VALID DATA Notes 32. If CE1 goes HIGH and CE2 goes LOW simultaneously with WE = VIH, the output remains in a high impedance state. 33. During this period, the I/Os are in output state. Do not apply input signals. Document Number: 38-05695 Rev. *I Page 11 of 18 CY62157E MoBL® Truth Table CE1 CE2 WE OE BHE BLE H X[34] X X X X Inputs/Outputs X[34] L X X X X High Z Deselect/Power Down Standby (ISB) X[34] X[34] X X H H High Z Deselect/Power Down Standby (ISB) L H H L L L Data Out (I/O0–I/O15) Read Active (ICC) L H H L H L Data Out (I/O0 –I/O7 ); High Z (I/O8–I/O15) Read Active (ICC) L H H L L H High Z (I/O0–I/O7); Data Out (I/O8–I/O15) Read Active (ICC) L H H H L H High Z Output Disabled Active (ICC) L H H H H L High Z Output Disabled Active (ICC) L H H H L L High Z Output Disabled Active (ICC) L H L X L L Data In (I/O0–I/O15) Write Active (ICC) L H L X H L Data In (I/O0–I/O7); High Z (I/O8–I/O15) Write Active (ICC) L H L X L H High Z (I/O0–I/O7); Data In (I/O8–I/O15) Write Active (ICC) High Z Mode Power Deselect/Power Down Standby (ISB) Note 34. The ‘X’ (Don’t care) state for the Chip enables in the truth table refer to the logic state (either HIGH or LOW). Intermediate voltage levels on these pins is not permitted. Document Number: 38-05695 Rev. *I Page 12 of 18 CY62157E MoBL® Ordering Information Speed (ns) Ordering Code Package Diagram Package Type Operating Range 45 CY62157ELL-45ZSXI 51-85087 44-pin TSOP Type II (Pb-free) Industrial 55 CY62157ELL-55ZSXE 51-85087 44-pin TSOP Type II (Pb-free) Automotive CY62157ELL-55BVXE 51-85150 48-ball VFBGA (Pb-free) Contact your local Cypress sales representative for availability of these parts. Ordering Code Definitions CY 621 5 7 E LL - XX XX X X Temperature Range: X = I or E I = Industrial; E = Automotive-E Pb-free Package Type: XX = ZS or BV ZS = 44-pin TSOP II BV = 48-ball VFBGA Speed Grade: XX = 45 ns or 55 ns Low Power Process Technology: E = 90 nm Buswidth: 7 = × 16 Density: 5 = 8-Mbit Family Code: 621= MoBL SRAM family Company ID: CY = Cypress Document Number: 38-05695 Rev. *I Page 13 of 18 CY62157E MoBL® Package Diagrams Figure 11. 48-ball VFBGA (6 × 8 × 1.0 mm) BV48/BZ48 Package Outline, 51-85150 51-85150 *H Document Number: 38-05695 Rev. *I Page 14 of 18 CY62157E MoBL® Package Diagrams (continued) Figure 12. 44-pin TSOP Z44-II Package Outline, 51-85087 51-85087 *E Document Number: 38-05695 Rev. *I Page 15 of 18 CY62157E MoBL® Acronyms Acronym Document Conventions Description Units of Measure CE Chip Enable CMOS Complementary Metal Oxide Semiconductor °C degree Celcius I/O Input/Output MHz megahertz OE Output Enable μA microampere RAM Random Access Memory μs microsecond SRAM Static Random Access Memory mA milliampere TTL Transistor-Transistor Logic mm millimeter TSOP Thin Small Outline Package ns nanosecond VFBGA Very Fine-Pitch Ball Grid Array ohm WE Write Enable % percent pF picofarad V volt W watt Document Number: 38-05695 Rev. *I Symbol Unit of Measure Page 16 of 18 CY62157E MoBL® Document History Page Document Title: CY62157E MoBL®, 8-Mbit (512 K × 16) Static RAM Document Number: 38-05695 Rev. ECN No. Issue Date Orig. of Change ** 291273 See ECN PCI New data sheet. *A 457689 See ECN NXR Added Automotive Product Removed Industrial Product Removed 35 ns and 45 ns speed bins Removed “L” bin Updated AC Test Loads table Corrected tR in Data Retention Characteristics from 100 s to tRC ns Updated the Ordering Information and replaced the Package Name column with Package Diagram *B 467033 See ECN NXR Added Industrial Product (Final Information) Removed 48 ball VFBGA package and its relevant information Changed the ICC(typ) value of Automotive from 2 mA to 1.8 mA for f = 1MHz Changed the ISB2(typ) value of Automotive from 5 A to 1.8 A Modified footnote #4 to include current limit Updated the Ordering Information table *C 569114 See ECN VKN Added 48 ball VFBGA package Updated Logic Block Diagram Added footnote #3 Updated the Ordering Information table *D 925501 See ECN VKN Added footnote #9 related to ISB2 and ICCDR Added footnote #14 related AC timing parameters *E 1045801 See ECN VKN Converted Automotive specs from preliminary to final *F 2934396 06/03/10 VKN Added footnote #23 related to chip enable Updated package diagrams Updated template. *G 3110053 12/14/2010 PRAS Changed Table Footnotes to Footnotes. Added Ordering Code Definitions. *H 3269641 05/30/2011 RAME Removed the note “For best practice recommendations, please refer to the Cypress application note AN1064, SRAM System Guidelines.” and its reference in Functional Description. Updated Electrical Characteristics. Updated Data Retention Characteristics. Added Acronyms and Units of Measure. Updated in new template. *I 4013958 06/05/2013 MEMJ Updated Functional Description. Description of Change Updated Electrical Characteristics: Added one more Test Condition “VCC = 5.5 V, IOH = –0.1 mA” for VOH parameter and added maximum value corresponding to that Test Condition. Added Note 8 and referred the same note in maximum value for VOH parameter corresponding to Test Condition “VCC = 5.5 V, IOH = –0.1 mA”. Updated Package Diagrams: spec 51-85150 – Changed revision from *F to *H. spec 51-85087 – Changed revision from *C to *E. Document Number: 38-05695 Rev. *I Page 17 of 18 CY62157E MoBL® Sales, Solutions, and Legal Information Worldwide Sales and Design Support Cypress maintains a worldwide network of offices, solution centers, manufacturer’s representatives, and distributors. To find the office closest to you, visit us at Cypress Locations. Products Automotive Interface Lighting & Power Control PSoC Solutions cypress.com/go/automotive Clocks & Buffers cypress.com/go/clocks psoc.cypress.com/solutions cypress.com/go/interface PSoC 1 | PSoC 3 | PSoC 5 cypress.com/go/powerpsoc cypress.com/go/plc Memory cypress.com/go/memory Optical & Image Sensing cypress.com/go/image PSoC cypress.com/go/psoc Touch Sensing cypress.com/go/touch USB Controllers cypress.com/go/USB Wireless/RF cypress.com/go/wireless © Cypress Semiconductor Corporation, 2004-2013. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges. 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Disclaimer: CYPRESS MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARD TO THIS MATERIAL, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. Cypress reserves the right to make changes without further notice to the materials described herein. Cypress does not assume any liability arising out of the application or use of any product or circuit described herein. Cypress does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress’ product in a life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges. Use may be limited by and subject to the applicable Cypress software license agreement. Document Number: 38-05695 Rev. *I Revised June 5, 2013 Page 18 of 18 MoBL is a registered trademark and More Battery Life is a trademark of Cypress Semiconductor. All products and company names mentioned in this document may be the trademarks of their respective holders.