AP4963GEM-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
DUAL P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Simple Drive Requirement
D2
D2
▼ Lower Gate Charge
D1
D1
▼ Fast Switching Performance
G2
S2
▼ RoHS Compliant & Halogen-Free
SO-8
S1
BVDSS
-30V
RDS(ON)
36mΩ
ID
-6A
G1
Description
AP4963 series are from Advanced Power innovated design
and silicon process technology to achieve the lowest possible
on-resistance and fast switching performance. It provides the
designer with an extreme efficient device for use in a wide
range of power applications.
The SO-8 package is widely preferred for all commercialindustrial surface mount applications using infrared reflow
technique and suited for voltage conversion or switch
applications.
D1
G1
D2
G2
S1
S2
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Parameter
Symbol
Rating
Units
VDS
Drain-Source Voltage
- 30
V
VGS
Gate-Source Voltage
+20
V
-6
A
- 4.8
A
- 30
A
2
W
ID@TA=25℃
ID@TA=70℃
3
Drain Current , VGS @ 10V
3
Drain Current , VGS @ 10V
1
IDM
Pulsed Drain Current
PD@TA=25℃
Total Power Dissipation
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
3
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
Unit
62.5
℃/W
1
201501052
AP4963GEM-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Min.
Typ.
-30
-
-
V
VGS=-10V, ID=-6A
-
-
36
mΩ
VGS=-4.5V, ID=-4A
-
-
65
mΩ
V
VGS=0V, ID=-250uA
Static Drain-Source On-Resistance
2
Max. Units
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-
-3
gfs
Forward Transconductance
VDS=-10V, ID=-6A
-
9.4
-
S
IDSS
Drain-Source Leakage Current
VDS=-30V, VGS=0V
-
-
-10
uA
Drain-Source Leakage Current (T j=70 C) VDS=-24V, VGS=0V
-
-
-250
uA
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+30
uA
ID=-6A
-
9
14.5
nC
o
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=-15V
-
2.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
5.5
-
nC
2
td(on)
Turn-on Delay Time
VDS=-15V
-
8
-
ns
tr
Rise Time
ID=-1A
-
9.5
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
20
-
ns
tf
Fall Time
VGS=-10V
-
20
-
ns
Ciss
Input Capacitance
VGS=0V
-
500
800
pF
Coss
Output Capacitance
VDS=-25V
-
180
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
135
-
pF
Min.
Typ.
IS=-1.7A, VGS=0V
-
-
-1.2
V
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage
2
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=-6A, VGS=0V
-
25
-
ns
Qrr
Reverse Recovery Charge
dI/dt=-100A/µs
-
17
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
2
3.Surface mounted on 1 in copper pad of FR4 board, t < 10s ; 135 ℃/W when mounted on Min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP4963GEM-HF
40
40
-ID , Drain Current (A)
-ID , Drain Current (A)
30
-10V
-7.0V
-6.0V
-5.0V
T A =150 o C
-10V
-7.0V
-6.0V
-5.0V
o
T A =25 C
20
V G = -4.0V
30
20
V G = -4.0V
10
10
0
0
0
1
2
3
4
5
0
6
-V DS , Drain-to-Source Voltage (V)
2
4
6
8
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
70
1.8
I D =-4A
T A =25 ℃
I D =-6A
V G =-10V
1.6
Normalized RDS(ON)
RDS(ON) (mΩ)
60
50
40
1.4
1.2
1.0
30
0.8
0.6
20
2
4
6
8
10
-50
Fig 3. On-Resistance v.s. Gate Voltage
5
1.4
Normalized VGS(th)
1.6
-IS(A)
4
T j =25 o C
T j =150 C
50
100
150
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
6
o
0
T j , Junction Temperature ( o C)
-V GS , Gate-to-Source Voltage (V)
3
2
1.2
1
0.8
0.6
1
0.4
0
0
0.2
0.4
0.6
0.8
1
1.2
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP4963GEM-HF
f=1.0MHz
10
1000
8
800
C (pF)
-VGS , Gate to Source Voltage (V)
I D = -6A
V DS = -15V
6
600
C iss
4
400
2
200
0
C oss
C rss
0
0
4
8
12
1
16
5
Q G , Total Gate Charge (nC)
9
13
17
21
25
29
-V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
100us
Operation in this area
10
limited by RDS(ON)
-ID (A)
1ms
10ms
1
100ms
1s
0.1
T A =25 o C
Single Pulse
DC
0.2
0.1
0.1
0.05
0.0
0.01
PDM
0.01
t
T
Single Pulse
Duty Factor = t/T
Peak Tj = PDM x Rthja + T a
Rthja=135 oC/W
0.001
0.01
0.01
Normalized Thermal Response (Rthja)
Duty Factor = 0.5
0.1
1
10
100
0.0001
0.001
0.01
-V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
-4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4
AP4963GEM-HF
MARKING INFORMATION
Part Number
4963GEM
YWWSSS
meet Rohs requirement
for low voltage MOSFET only
Package Code
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
5