isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU911 DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 400V(Min) APPLICATIONS ·Solenoid/ relay drivers ·Motor control ·Electronic automotive ignition ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage VBE= 0 450 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5 V IC Collector Current 6 A ICM Collector Current-peak 10 A IB Base Current 1 A PC Collector Power Dissipation @TC=25℃ 60 W Tj Junction Temperature 150 ℃ -65~150 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 2.08 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU911 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 2.5A; IB= 50mA 1.8 V V CE(sat)-2 Collector-Emitter Saturation Voltage IC= 4A; IB= 200mA 1.8 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= 2.5A; IB= 50mA 2.2 V V BE(sat)-2 Base-Emitter Saturation Voltage IC= 4A; IB= 200mA 2.5 V ICES Collector Cutoff Current VCE= 450V;VBE= 0 VCE= 450V;VBE= 0;Tj= 125℃ 1.0 5.0 mA ICEO Collector Cutoff Current VCE= 400V; IB= 0 1.0 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 5.0 mA VECF C-E Diode Forward Voltage IF= 4A 2.5 V isc Website：www.iscsemi.cn CONDITIONS B B MIN TYP. MAX 400 UNIT V