Advance Technical Information HiPerFASTTM IGBT C2-Class High Speed IGBT IXGA IXGP IXGA IXGP 16N60C2 16N60C2 16N60C2D1 16N60C2D1 VCES IC25 VCE(sat) = 600 V = 40 A = 3.0 V = 35 ns tfi(typ) D1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 40 A IC110 TC = 110°C 16 A ID110 TC = 110°C (IXG_16N60C2D1 diode) ICM TC = 25°C, 1 ms SSOA (RBSOA) VGE = 15 V, TJ = 125°C, RG = 22 Ω Clamped inductive load PC TC = 25°C 11 A 100 A ICM = 32 @0.8 VCES A 150 W -55 ... +150 °C 150 °C Tstg -55 ... +150 °C Md Weight Mounting torque (M3.5 screw) G 0.55/5 Nm/lb.in. °C Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s 300 Maximum tab temperature soldering SMD devices for 10s 260 °C 4 2 g g z z VGE(th) IC = 250 µA, VCE = VGE ICES VCE = VCES VGE = 0 V IGES VCE = 0 V, VGE = ±20 V VCE(sat) IC = 12 A, VGE = 15 V Note 2 © 2004 IXYS All rights reserved Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 2.5 16N60C2 16N60C2D1 TJ=125°C 2.1 5.0 V 25 50 µA µA ±100 nA 3.0 V V C (TAB) C = Collector TAB = Collector Very high frequency IGBT High current handling capability MOS Gate turn-on - drive simplicity Applications z Test Conditions C (TAB) Features z Symbol C E G = Gate E = Emitter z TO-220 TO-263 C TO-220 (IXGP) G TJM TJ TO-263 (IXGA) z z z z PFC circuits Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies AC motor speed control DC servo and robot drives DC choppers Advantages z z High power density Very fast switching speeds for high frequency applications DS99142A(3/04) IXGP 16N60C2 IXGA 16N60C2D1 IXGA 16N60C2 IXGA 16N60C2D1 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs IC = 12A; VCE = 10 V, Note 2. 12 S Cies VCE = 25 V, VGE = 0 V, f = 1 MHz 720 pF 55 65 pF pF 19 pF 32 nC Qge 6 nC Qgc 10 nC 25 ns 15 ns Coes 8 16N60C2 16N60C2D1 Cres Qg td(on) tri td(off) tfi IC = 20A, VGE = 15 V, VCE = 0.5 VCES Inductive load, TJ = 25°°C IC = 12 A; VGE = 15 V VCE = 400 V; RG = Roff = 22 Ω Note 1. 60 35 Eoff td(on) tri Eon td(off) tfi 60 16N60C2D1 Note 1 Eoff RthJC RthCK (IXGP) ns Pins: 1 - Gate 3 - Emitter 2 - Collector 4 - Collector ns 100 25 Inductive load, TJ = 125°°C IC = 12A; VGE = 15 V VCE = 400 V; RG = Roff = 22 Ω 120 TO-220 Outline µJ ns 18 ns 0.38 mJ 120 ns 70 ns 150 µJ 0.5 0.83 K/W K/W TO-263 Outline Reverse Diode (FRED) Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VF IF = 10 A, VGE = 0 V TJ = 125 °C 2.66 1.66 IRM t rr IF = 12 A; -diF/dt = 100 A/µs, VR = 100 V VGE = 0 V; TJ = 125 °C t rr IF = 1 A; -diF/dt = 100 A/µs; VR = 30 V, VGE = 0 V 2.5 110 A ns 30 ns 2.5 K/W RthJC Notes: V 1. Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ, or increased RG. 2. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: Dim. Millimeter Min. Max. Inches Min. Max. A A1 4.06 2.03 4.83 2.79 .160 .080 .190 .110 b b2 0.51 1.14 0.99 1.40 .020 .045 .039 .055 c c2 0.46 1.14 0.74 1.40 .018 .045 .029 .055 D D1 8.64 7.11 9.65 8.13 .340 .280 .380 .320 E E1 e 9.65 6.86 2.54 10.29 8.13 BSC .380 .270 .100 .405 .320 BSC L L1 L2 L3 L4 14.61 2.29 1.02 1.27 0 15.88 2.79 1.40 1.78 0.38 .575 .090 .040 .050 0 .625 .110 .055 .070 .015 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 =