BZV55B2V4 ~ BZV55B75 Taiwan Semiconductor Small Signal Product 500mW, 2% Tolerance Zener Diode FEATURES - Wide zener voltage range selection : 2.4V to 75V - VZ Tolerance Selection of ±2% - Hermetically sealed glasss - Pb free and RoHS compliant - High reliability glass passivation insuring parameter stability and protection against junction contamination Mini-MELF (LL34) Hermetically Sealed Glass MECHANICAL DATA - Case: Mini-MELF Package (JEDEC DO-213AC) - High temperature soldering guaranteed: 270oC/10s - Polarity: Indicated by cathode band - Weight : 31 mg (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted) PARAMETER Power Dissipation Forward Voltage Thermal Resistance (Junction to Ambient) IF = 100 mA Storage Temperature Range (Note 1) SYMBOL VALUE UNIT PD VF 500 1 mW V RθJA 300 TJ, TSTG - 65 to + 175 o C/W o C Note1 : Valid provided that electrodes are kept at ambient temperature Zener I vs. V Characteristics VBR : Voltage at IZK IZK : Test current for voltage VBR ZZK : Dynamic impedance at IZK IZT : Test current for voltage VZ VZ : Voltage at current I ZZT : Dynamic impedance at IZT IZM : Maximum steady state current : Voltage at IZM VZM Document Number: DS_S1403001 Version: E14 BZV55B2V4 ~ BZV55B75 Taiwan Semiconductor Small Signal Product Electrical Characteristics (Ratings at TA=25oC ambient temperature unless otherwise specified) VF Forward Voltage = 1.0V Maximum @ IF = 100 mA for all part numbers Min Nom Max IZT (mA) BZV55B2V4 2.35 2.4 2.45 5 ZZT @ IZT (Ω) Max 85 BZV55B2V7 2.65 2.7 2.75 5 85 1.0 600 10 1.0 BZV55B3V0 2.94 3.0 3.06 5 85 1.0 600 4 1.0 BZV55B3V3 3.23 3.3 3.37 5 85 1.0 600 2 1.0 BZV55B3V6 3.53 3.6 3.67 5 85 1.0 600 2 1.0 BZV55B3V9 3.82 3.9 3.98 5 85 1.0 600 2 1.0 BZV55B4V3 4.21 4.3 4.39 5 75 1.0 600 1 1.0 BZV55B4V7 4.61 4.7 4.79 5 60 1.0 600 0.5 1.0 BZV55B5V1 5.00 5.1 5.20 5 35 1.0 550 0.1 1.0 BZV55B5V6 5.49 5.6 5.71 5 25 1.0 450 0.1 1.0 BZV55B6V2 6.08 6.2 6.32 5 10 1.0 200 0.1 2.0 BZV55B6V8 6.66 6.8 6.94 5 8 1.0 150 0.1 3.0 BZV55B7V5 7.35 7.5 7.65 5 7 1.0 50 0.1 5.0 BZV55B8V2 8.04 8.2 8.36 5 7 1.0 50 0.1 6.2 BZV55B9V1 8.92 9.1 9.28 5 10 1.0 50 0.1 6.8 BZV55B10 9.80 10 10.20 5 15 1.0 70 0.1 7.5 BZV55B11 10.78 11 11.22 5 20 1.0 70 0.1 8.2 BZV55B12 11.76 12 12.24 5 20 1.0 90 0.1 9.1 BZV55B13 12.74 13 13.26 5 26 1.0 110 0.1 10 BZV55B15 14.70 15 15.30 5 30 1.0 110 0.1 11 BZV55B16 15.68 16 16.32 5 40 1.0 170 0.1 12 BZV55B18 17.64 18 18.36 5 50 1.0 170 0.1 13 BZV55B20 19.60 20 20.40 5 55 1.0 220 0.1 15 BZV55B22 21.56 22 22.44 5 55 1.0 220 0.1 16 BZV55B24 23.52 24 24.48 5 80 1.0 220 0.1 18 BZV55B27 26.46 27 27.54 5 80 1.0 220 0.1 20 BZV55B30 29.40 30 30.60 5 80 1.0 220 0.1 22 BZV55B33 32.34 33 33.66 5 80 1.0 220 0.1 24 BZV55B36 35.28 36 36.72 5 80 1.0 220 0.1 27 BZV55B39 38.22 39 39.78 2.5 90 0.5 500 0.1 28 BZV55B43 42.14 43 43.86 2.5 90 0.5 600 0.1 32 BZV55B47 46.06 47 47.94 2.5 110 0.5 700 0.1 35 BZV55B51 49.98 51 52.02 2.5 125 0.5 700 0.1 38 BZV55B56 54.88 56 57.12 2.5 135 0.5 1000 0.1 42 BZV55B62 60.76 62 63.24 2.5 150 0.5 1000 0.1 47 BZV55B68 66.64 68 69.36 2.5 160 0.5 1000 0.1 51 BZV55B75 73.50 75 76.50 2.5 170 0.5 1000 0.1 56 VZ @ IZT (Volt) Part Number 1.0 ZZK @ IZK (Ω) Max 600 IR @ VR (μA) Max 50 1.0 IZK (mA) VR (V) Notes: 1. The Zener Voltage (VZ) is tested under pulse condition of 10ms. 2. The device numbers listed have a standard tolerance on the nomial zener voltage of ±2% 3. For detailed information on price, availability and delivery of nominal zener voltages between the voltages shown and tighter voltage tolerances, contact your nearest Taiwan Semiconductor representative. 4. The Zener impedance is derived from the 60-cycle ac voltage, which results when an ac current having an RMS value equal to 10% of the dc zener current (IZT or IZK) is superimposed to IZT or IZK. Document Number: DS_S1403001 Version: E14 BZV55B2V4 ~ BZV55B75 Taiwan Semiconductor Small Signal Product RATINGS AND CHARACTERISTICS CURVES (BZV55B2V4 ~ BZV55B75) (TA=25℃ unless otherwise noted) Fig. 2 Total Capacitance Fig. 1 Power Dissipation VS. Ambient Temperature 1000 600 f=1MHz TA=25oC Total Capacitance (pF) PD-Power DIssipation (mW) 500 400 300 200 100 VR=2V VR=5V 10 100 VR=20V 0 0 40 80 120 160 200 0 20 40 Temperature (oC) 60 80 VZ - Reverse Voltage (V) Fig. 4 Forward Current VS. Forward Voltage Fig. 3 Differential Impedance VS. Zener Voltage 1000 1000 Differential Zener Impedance(Ohm) VR=25V 1 TA=25oC Forward Current (mA) 100 IZ=2mA IZ=5mA 10 IZ=10mA 1 100 10 1 0.1 0 1 10 0.0 100 0.2 VZ - Reverse Voltage (V) 0.4 0.6 0.8 1.0 1.2 VF - Forward Voltage (mV) Fig. 6 Reverse Current VS. Reverse Voltage Fig. 5 Reverse Current VS. Reverse Voltage 100 300 Reverse Current (mA) Reverse Current (mA) 250 200 150 100 10 1 0.1 50 0 0.01 0 2 4 6 VZ - Reverse Voltage (V) Document Number: DS_S1403001 8 10 15 25 35 45 55 65 75 85 VZ - Reverse Voltage (V) Version: E14 BZV55B2V4 ~ BZV55B75 Taiwan Semiconductor Small Signal Product ORDERING INFORMATION PART NO. MANUFACTURE CODE BZV55Bxxx (Note1) PACKING CODE (Note 2) GREEN COMPOUND PACKAGE PACKING L0 CODE G Mini-MELF (Glass Seal) 10K / 13" Reel L1 G Mini-MELF (Glass Seal) 2.5K / 7" Reel Note 1 : "xxx" is Device Code from "2V4" thru "75". Note 2 : Manufacture special control, if empty means no special control requirement. EXAMPLE PREFERRED P/N PART NO. BZV55B2V4 L0G BZV55B2V4 BZV55B2V4-L0 L0G BZV55B2V4 BZV55B2V4-B0 L0G BZV55B2V4 MANUFACTURE Document Number: DS_S1403001 CODE PACKING CODE GREEN COMPOUND CODE DESCRIPTION L0 G Green compound L0 L0 G Green compound B0 L0 G Green compound Version: E14 BZV55B2V4 ~ BZV55B75 Taiwan Semiconductor Small Signal Product PACKAGE OUTLINE DIMENSIONS C DIM. B Unit (mm) Unit (inch) Min Max Min Max A 3.30 3.70 0.130 0.146 B 1.40 1.60 0.055 0.063 C 0.20 0.50 0.008 0.020 A SUGGESTED PAD LATOUT DIM. Document Number: DS_S1403001 Unit(mm) Unit(inch) Typ. Typ. A 1.25 0.049 B 2.00 0.079 C 2.50 0.098 D 5.00 0.197 Version: E14