• 1N5711UR-1 AVAILABLE IN JAN, JANTX, JANTXV and JANS PER MIL-PRF-19500/444 • 1N5712UR-1 AVAILABLE IN JAN, JANTX, JANTXV and JANS PER MIL-PRF 19500/445 • SCHOTTKY BARRIER DIODES • LEADLESS PACKAGE FOR SURFACE MOUNT • METALLURGICALLY BONDED, DOUBLE PLUG CONSTRUCTION 1N5711UR-1 1N5712UR-1 1N6857UR-1 1N6858UR-1 CDLL2810 CDLL5711 CDLL5712 CDLL6263 CDLL6857 CDLL6858 MAXIMUM RATINGS Operating Temperature: -65°C to +150°C Storage Temperature: -65°C to +150°C Operating Current: 5711 & 6263 TYPES :33mA dc @ TEC = +140°C 2810, 5712 & 6858 Types :75mA dc @ TEC = +130°C 6857 Types :150mA dc @ TEC = +110°C Derating: :All Types: Derate to 0 (zero) mA dc @ +150°C ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified. CDI MINIMUM MAXIMUM MAXIMUM TYPE BREAKDOWN FORWARD FORWARD MAXIMUM REVERSE NUMBER VOLTAGE VOLTAGE VOLTAGE VBR @ 10 µ A V @ 1 mA F VOLTS VOLTS VOLTS@mA NA VOLTS PICO FARADS 1N5711UR-1 70 0.41 1.0 @ 15 200 50 2.0 1 1N5712UR-1 20 0.41 1.0@35 150 16 2.0 1 1N6857UR-1 20 0.35 0.75@ 35 150 16 4.5 2 1N6858UR-1 70 0.36 0.65 @ 15 200 50 4.5 2 CDLL2810 20 0.41 1.0 @ 35 100 15 2.0 1 CDLL5711 70 0.41 1.0 @ 15 200 50 2.0 1 CDLL5712 20 0.41 1.0 @ 35 150 16 2.0 1 CDLL6263 60 0.41 1.0 @ 15 200 50 2.2 1 CDLL6857 20 0.35 0.75 @ 35 150 16 4.5 2 CDLL6858 70 0.36 0.65 @ 15 200 50 4.5 2 LEAKAGE CURRENT MAXIMUM CAPACITANCE @ V R = 0 VOLTS ESDS CLASS f = 1.0 MHZ NOTE: V I F@ F 1 @V R R C DIM D F G G1 S MILLIMETERS INCHES MIN MAX MIN MAX 1.60 1.70 0.063 0.067 0.41 0.55 0.016 0.022 3.30 3.70 .130 .146 2.54 REF. .100 REF. 0.03 MIN. .001 MIN. T FIGURE 1 Effective Minority Carrier Lifetime (τ ) is 100 Pico Seconds DESIGN DATA CASE: DO-213AA, Hermetically sealed glass case. (MELF, SOD-80, LL34) LEAD FINISH: Tin / Lead THERMAL RESISTANCE: (ROJEC): 100 °C/W maximum at L = 0 inch THERMAL IMPEDANCE: (ZOJX): 40 °C/W maximum POLARITY: Cathode end is banded. NOTICE: Qualification testing to J, JX, JV and JS levels for 6857 and 6858 types is underway. Contact the factory for qualification completion dates. These two part numbers are being introduced by CDI as “drop-in” replacements for the 5711 and 5712. They provide a more robust mechanical design and a higher ESDS class with the only trade-off being an increase in capacitance. MOUNTING SURFACE SELECTION: The Axial Coefficient of Expansion (COE) Of this Device is Approximately +6PPM/°C. The COE of the Mounting Surface System Should Be Selected To Provide A Suitable Match With This Device. 6 LAKE STREET, LAWRENCE, MASSACHUSETTS 01841 PHONE (978) 620-2600 FAX (978) 689-0803 WEBSITE: http://www.microsemi.com 145 1N5711UR-1, 1N5712UR-1, 1N6857UR-1, 1N6858UR-1, CDLL5711, CDLL5712, CDLL2810, CDLL6263, CDLL6857 and CDLL6858 10,000 IR – REVERSE CURRENT (nA) IF – FORWARD CURRENT (mA) 100 10 1.0 .1 1000 100 10 1.0 .01 0 .2 .4 .6 .8 1.0 1.2 0 VF – FORWARD VOLTAGE (V) 5.0 10 15 20 25 30 VR – REVERSE VOLTAGE (V) (PULSED) Figure 1. I-V Curve Showing Typical Forward Voltage Variation with Temperature for the CDLL2810 and CDLL5712 Schottky Diodes. Figure 2. CDLL2810 and CDLL5712 Typical Variation of Reverse Current (IR) vs. Reverse Voltage (VR) at Various Temperatures. 100,000 50 10 5 1 .5 .1 .05 .01 1000 1 10 1 0 .2 .4 .6 .8 1.0 VF – FORWARD VOLTAGE (V) Figure 3. I-V Curve Showing Typical Forward Voltage Variation with Temperature for Schottky Diode CDLL5711. 146 10,000 RD – DYNAMIC RESISTANCE (!!) IR – REVERSE CURRENT (nA) IF – FORWARD CURRENT (mA) 1000 1.2 0 10 20 30 40 50 VR – REVERSE VOLTAGE (V) (PULSED) Figure 4. CDLL5711 Typical Variation of Reverse Current (IR) vs. Reverse Voltage (VR) at Various Temperatures. 60 100 10 1 .1 1.0 10 IF – FORWARD CURRENT (mA) (PULSED) Figure 5. Typical Dynamic Resistance (RD) vs. Forward Current (IF). 100