BCW29, BCW30 BCW29, BCW30 Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren für die Oberflächenmontage PNP PNP Version 2006-07-28 Power dissipation – Verlustleistung 1.1 2.9 ±0.1 0.4 Plastic case Kunststoffgehäuse 1 1.3±0.1 2.5 max 3 Type Code 250 mW 2 1.9 Dimensions - Maße [mm] 1=B 2=E 3=C SOT-23 (TO-236) Weight approx. – Gewicht ca. 0.01 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Maximum ratings (TA = 25°C) Grenzwerte (TA = 25°C) BCW29 BCW30 Collector-Emitter-volt. – Kollektor-Emitter-Spannung B open - VCEO 32 V Collector-Base-voltage – Kollektor-Basis-Spannung E open - VCBO 32 V Emitter-Base-voltage – Emitter-Basis-Spannung C open - VEB0 5V Power dissipation – Verlustleistung Ptot 250 mW 1) Collector current – Kollektorstrom (dc) - IC 100 mA Peak Collector current – Kollektor-Spitzenstrom - ICM 200 mA Peak Base current – Basis-Spitzenstrom - IBM 200 mA Tj TS -55...+150°C -55…+150°C Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C) Min. Typ. Max. DC current gain – Kollektor-Basis-Stromverhältnis - VCE = 5 V, - IC = 10 µA BCW29 BCW30 hFE hFE – – 90 150 – – - VCE = 5 V, - IC = 2 mA BCW29 BCW30 hFE hFE 120 215 – – 260 500 – – 80 mV 150 mV 300 mV – Collector-Emitter saturation voltage – Kollektor-Sättigungsspannung 2) - IC = 10 mA, - IB = 0.5 mA - IC = 50 mA, - IB = 2.5 mA 1 2 - VCEsat - VCEsat Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% © Diotec Semiconductor AG http://www.diotec.com/ 1 BCW29, BCW30 Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C) Min. Typ. Max. - VBEsat - VBEsat – – 720 mV 810 mV – – - VBE 600 mV – 750 mV - ICB0 - ICB0 – – – – 100 nA 10 µA - IEB0 – – 100 nA fT 100 MHz – – CCBO – 4.5 pF – F – – 10 dB Base-Emitter saturation voltage – Basis-Sättigungsspannung 2) - IC = 10 mA, - IB = 0.5 mA - IC = 50 mA, - IB = 2.5 mA Base-Emitter-voltage – Basis-Emitter-Spannung 2) - IC = 2 mA, - VCE = 5 V Collector-Base cutoff current – Kollektor-Basis-Reststrom - VCB = 30 V, (E open) - VCE = 30 V, Tj = 100°C, (E open) Emitter-Base cutoff current - VEB = 5 V, (C open) Gain-Bandwidth Product – Transitfrequenz - VCE = 5 V, - IC = 10 mA, f = 100 MHz Collector-Base Capacitance – Kollektor-Basis-Kapazität - VCB = 10 V, IE =ie = 0, f = 1 MHz Noise figure – Rauschzahl - VCE = 5 V, - IC = 200 µA, RG = 2 kΩ f = 1 kHz, Δf = 200 Hz Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft Recommended complementary NPN transistors Empfohlene komplementäre NPN-Transistoren Marking - Stempelung 2 1 2 RthA < 420 K/W 1) BCW31 ... BCW33 BCW29 = C1 BCW30 = C2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss http://www.diotec.com/ © Diotec Semiconductor AG