DMN3008SFGQ 30V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI BVDSS Features and Benefits ID max RDS(ON) max 30V TC = +25°C 4.4mΩ @ VGS = 10V 62A 5.5mΩ @ VGS = 4.5V 56A Low RDS(ON) – Ensures on-state losses are minimized Small, form factor thermally efficient package enables higher density end products Occupies only 33% of the board area occupied by SO-8 enabling smaller end products 100% Unclamped Inductive Switch (UIS) Test in Production Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: Description and Applications Mechanical Data Backlighting Power Management Functions DC-DC Converters Case: PowerDI3333-8 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See Diagram Terminals: Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.072 grams (Approximate) D PowerDI3333-8 Pin 1 S S S G G D D D S D Bottom View Top View Equivalent Circuit Ordering Information (Note 5) Part Number DMN3008SFGQ-7 DMN3008SFGQ-13 Notes: Case PowerDI3333-8 PowerDI3333-8 Packaging 2,000/Tape & Reel 3,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/product_compliance_definitions.html. 5. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information PowerDI3333-8 YYWW ADVANCE INFORMATION Product Summary N08 = Product Type Marking Code YYWW = Date Code Marking YY = Last Two Digits of Year (ex: 16 = 2016) WW = Week Code (01 to 53) N08 POWERDI is a registered trademark of Diodes Incorporated. DMN3008SFGQ Document number: DS38901 Rev. 1 - 2 1 of 7 www.diodes.com May 2016 © Diodes Incorporated DMN3008SFGQ Maximum Ratings (@TA = +25°C, unless otherwise specified.) ADVANCE INFORMATION Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Steady State Continuous Drain Current (Note 7) VGS = 10V TA = +25°C TA = +70°C TA = +25°C TA = +70°C TC = +25°C TC = +70°C t<10s Steady State ID Value 30 ±20 17.6 14.1 ID 23.0 18.4 A A 62 ID Pulsed Drain Current (10μs pulse, duty cycle = 1%) Maximum Continuous Body Diode Forward Current (Note 7) Avalanche Current, L = 0.1mH Avalanche Energy, L = 0.1mH Units V V A 80 2 45 101 A A A mJ Value 0.9 0.6 134 79 2.1 1.3 58 34 4.8 -55 to +150 Units IDM IS IAS EAS Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol TA = +25°C TA = +70°C Steady State t < 10s TA = +25°C TA = +70°C Steady State t < 10s Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Total Power Dissipation (Note 7) Thermal Resistance, Junction to Ambient (Note 7) PD RθJA PD RθJA Thermal Resistance, Junction to Case (Note 7) Operating and Storage Temperature Range RθJC TJ, TSTG W °C/W °C/W W °C/W °C/W °C/W °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 30 — — — — — — 10 ±100 V μA nA VGS = 0V, ID = 250μA VDS = 30V, VGS = 0V VGS = ±20V, VDS = 0V VGS(TH) RDS(ON) 2.3 4.4 5.5 1.2 mΩ VSD — 3.9 4.6 0.75 V Static Drain-Source On-Resistance 1 — — — VDS = VGS, ID = 250μA VGS = 10V, ID = 13.5A VGS = 4.5V, ID = 13.5A VGS = 0V, IS = 1A Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(ON) tR tD(OFF) tF tRR QRR — — — — — — — — — — — — — — 3,690 530 459 0.9 41 86 9.2 18.6 5.7 14.0 63.7 28.4 19.3 10.7 — — — — — — — — — — — — — — pF pF pF Ω nC nC nC nC ns ns ns ns ns nC Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 4.5V) Total Gate Charge (VGS = 10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Reverse Recovery Time Reverse Recovery Charge Notes: V Test Condition VDS = 10V, VGS = 0V, f = 1MHz VDS = 0V, VGS = 0V, f = 1MHz VDS = 24V, ID = 27A VDD = 15V, VGS = 10V, RL = 1.11Ω, RG = 4.7Ω, ID = 13.5A IF = 13.5A, di/dt=100A/μs 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. POWERDI is a registered trademark of Diodes Incorporated. DMN3008SFGQ Document number: DS38901 Rev. 1 - 2 2 of 7 www.diodes.com May 2016 © Diodes Incorporated DMN3008SFGQ 30 ID, DRAIN CURRENT (A) VGS = 4.5V 25 )A ( T N 20 E R R U C 15 N I A R D 10 ,D I ID, DRAIN CURRENT (A) VGS = 4.0V VGS = 3.0V VGS = 2.5V 10.0 8.0 6.0 4.0 2.0 0.0 VGS = 2.0V 0 0.5 1 1.5 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristic TA = 25°C TA = -55°C 0 0.5 1 1.5 2 2.5 3 3.5 VGS , GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics 4 0.03 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE () TA = 85°C 0 2 0.025 0.005 VGS = 4.5V 0.0045 0.02 0.015 0.004 VGS = 10V 0.0035 0.003 ID = 13.5A 0.01 0.005 0.0025 0.002 0 2 R TA = 125°C VGS = 1.8V 0.0055 O (S D TA = 150°C 5 0.006 0.01 0 0 4 6 8 10 12 14 16 18 20 22 24 26 28 30 ID, DRAIN-SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage 2 4 6 8 10 12 14 16 18 VGS, GATE-SOURCE VOLTAGE (V) Figure 4 Typical Transfer Characteristic 20 1.8 VGS = 4.5V 0.009 0.008 R DS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) ) ( E C N A T S IS E R -N O E C R U O S -N IA R D , )N VDS = 5.0V VGS = 10V 22.0 20.0 18.0 16.0 14.0 12.0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () ADVANCE INFORMATION 30.0 28.0 26.0 24.0 TA = 150°C 0.007 TA = 125°C 0.006 TA = 85°C 0.005 TA = 25°C 0.004 TA = -55°C 0.003 0.002 1.6 VGS = 4.5V ID = 13.5A 1.4 1.2 VGS = 10V ID = 13.5A 1 0.8 0.001 0 0 5 10 15 20 25 ID, DRAIN CURRENT (A) Figure 5 Typical On-Resistance vs. Drain Current and Temperature 30 0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 6 On-Resistance Variation with Temperature POWERDI is a registered trademark of Diodes Incorporated. DMN3008SFGQ Document number: DS38901 Rev. 1 - 2 3 of 7 www.diodes.com May 2016 © Diodes Incorporated 1.8 ) V ( E G A T L O V D L O H S E R H T E T A G , )h VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0.01 0.009 0.008 VGS = 4.5V ID = 13.5A 0.007 0.006 0.005 VGS = 10V ID = 13.5A 0.004 0.003 0.002 0.001 t( S G V 0 -50 1.6 1.4 1.2 ID = 1mA 1 ID = 250µA 0.8 0.6 0.4 0.2 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE ( C) Figure 7 On-Resistance Variation with Temperature 25 )A ( T N 20 E R R U C 15 E C R U O 10 S ,S I 5 ) A n ( 10000 T N E R R 1000 U C E G A 100 K A E L N 10 I A R D ,S 1 S D I TA = 150°C TA = 125°C TA = 85°C TA = 25°C TA = -55°C 0 -25 0 25 50 75 100 125 150 TJ , JUNCTION TEMPERATURE (C) Figure 8 Gate Threshold Variation vs. Junction Temperature TA = 150°C IDSS, DRAIN LEAKAGE CURRENT (nA) 100000 IS, SOURCE CURRENT (A) 30 TA = 125°C TA = 85°C TA = 25°C 0.1 0 0.2 0.4 0.6 0.8 1 1.2 VSD , SOURCE-DRAIN VOLTAGE (V) Figure 9 Diode Forward Voltage vs. Current 10 VGS GATE THRESHOLD VOLTAGE (V) ADVANCE INFORMATION DMN3008SFGQ 0 5 10 15 20 25 30 VDS , DRAIN-SOURCE VOLTAGE (V) Figure 10 Typical Drain-Source Leakage Current vs. Voltage 8 VDS = 24V ID = 27A 6 4 2 0 0 10 20 30 40 50 60 70 80 90 100 Qg, TOTAL GATE CHARGE (nC) Figure 11 Gate Charge POWERDI is a registered trademark of Diodes Incorporated. DMN3008SFGQ Document number: DS38901 Rev. 1 - 2 4 of 7 www.diodes.com May 2016 © Diodes Incorporated DMN3008SFGQ 1000 10000 RDS(ON) Limited CT, JUNCTION CAPACITANCE (pF) -ID, DRAIN CURRENT (A) Ciss 1000 Coss Crss 100 0 100 ) A ( T N E 10 R R U C DC N PW = 10s I 1 A PW = 1s R D PW = 100ms ,D PW = 10ms -I T = 150°C PW = 1ms 0.1 J(max) TA = 25°C VGS = 10V Single Pulse 0.01 DUT on 1 * MRP Board 5 10 15 20 25 V DS, DRAIN-SOURCE VOLTAGE (V) Figure 12 Typical Junction Capacitance 30 0.01 PW = 100µs 0.1 1 10 100 -VDS , DRAIN-SOURCE VOLTAGE (V) Figure 13 SOA, Safe Operation Area 1 r(t), TRANSIENT THERMAL RESISTANCE ADVANCE INFORMATION f = 1MHz D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 D = 0.02 0.01 D = 0.01 D = 0.005 RR (t) = r(t) * RJA JA θJA (t) = r(t) * RθJA = 136癈 136℃/W RR /W θJA = JA DutyCycle, Cycle, D Duty D ==t1/t2 t1/ t2 Single Pulse 0.001 0.0001 0.001 0.01 0.1 1 10 t1, PULSE DURATION TIMES (sec) t1, PULSE DURATION TIME (sec) Figure 14 Transient Thermal Resistance Figure 14 Transient Thermal Resistance 100 1000 POWERDI is a registered trademark of Diodes Incorporated. DMN3008SFGQ Document number: DS38901 Rev. 1 - 2 5 of 7 www.diodes.com May 2016 © Diodes Incorporated DMN3008SFGQ Package Outline Dimensions ADVANCE INFORMATION Please see http://www.diodes.com/package-outlines.html for the latest version. PowerDI3333-8 A3 A1 A Seating Plane D L(4x) D2 1 Pin #1 ID E4 b2(4x) E E3 E2 L1(3x) 8 z(4x) PowerDI3333-8 Dim Min Max Typ A 0.75 0.85 0.80 A1 0.00 0.05 0.02 A3 0.203 b 0.27 0.37 0.32 b2 0.15 0.25 0.20 D 3.25 3.35 3.30 D2 2.22 2.32 2.27 E 3.25 3.35 3.30 E2 1.56 1.66 1.61 E3 0.79 0.89 0.84 E4 1.60 1.70 1.65 e 0.65 L 0.35 0.45 0.40 L1 0.39 z 0.515 All Dimensions in mm b e Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. PowerDI3333-8 X3 X2 8 Y2 X1 Y1 Y3 Y Dimensions Value (in mm) C 0.650 X 0.420 X1 0.420 X2 0.230 X3 2.370 Y 0.700 Y1 1.850 Y2 2.250 Y3 3.700 1 X C POWERDI is a registered trademark of Diodes Incorporated. DMN3008SFGQ Document number: DS38901 Rev. 1 - 2 6 of 7 www.diodes.com May 2016 © Diodes Incorporated DMN3008SFGQ ADVANCE INFORMATION IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2016, Diodes Incorporated www.diodes.com POWERDI is a registered trademark of Diodes Incorporated. DMN3008SFGQ Document number: DS38901 Rev. 1 - 2 7 of 7 www.diodes.com May 2016 © Diodes Incorporated