H5N3007FN Silicon N Channel MOS FET High Speed Power Switching REJ03G1860-0100 Rev.1.00 Nov 09, 2009 Features • • • • Low on-resistance Low leakage current High speed switching Built-in fast recovery diode Outline RENESAS Package code: PRSS0003AB-A (Package name: TO-220FN) D 1. Gate 2. Drain 3. Source G 1 2 3 S Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel to case thermal impedance Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. STch = 25°C, Tch ≤ 150°C REJ03G1860-0100 Rev.1.00 Nov 09, 2009 Page 1 of 3 Symbol VDSS VGSS ID ID (pulse) Note1 IDR IDR (pulse) Note1 IAPNote3 EARNote3 θch-c Ratings 300 ±30 15 60 15 60 15 13.5 3.57 Unit V V A A A A A mJ °C/W Pch Note2 Tch Tstg 35 150 –55 to +150 W °C °C H5N3007FN Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Forward transfer admittance Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate to source charge Gate to drain charge Symbol V(BR)DSS IDSS IGSS VGS(off) |yfs| RDS(on) Min 300 — — 1.5 9 — Typ — — — — 15 0.12 Max — 10 ±0.1 4.0 — 0.16 Unit V μA μA V S Ω Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd — — — — — — — — — — 2180 275 77 35 50 160 40 81 10 38 — — — — — — — — — — pF pF pF ns ns ns ns nC nC nC VDF trr — — 0.85 110 1.30 — V ns Body-drain diode forward voltage Body-drain diode reverse recovery time Notes: 4. Pulse test REJ03G1860-0100 Rev.1.00 Nov 09, 2009 Page 2 of 3 Test conditions ID = 10 mA, VGS = 0 VDS = 300 V, VGS = 0 VGS = ±30 V, VDS = 0 VDS = 10 V, ID = 1 mA ID = 7.5 A, VDS = 10 V Note4 ID = 7.5 A, VGS = 10 V Note4 VDS = 25 V VGS = 0 f = 1 MHz ID = 7.5 A VGS = 10 V RL = 20 Ω Rg = 10 Ω VDD = 240 V VGS = 10 V ID = 15 A IF = 15 A, VGS = 0 Note4 IF = 15 A, VGS = 0 diF/dt = 100 A/μs H5N3007FN Package Dimensions Package Name TO-220FN JEITA Package Code ⎯ RENESAS Code PRSS0003AB-A Previous Code ⎯ MASS[Typ.] 2.0g 2.8 ± 0.2 6.5 ± 0.3 3 ± 0.3 φ3.2 ± 0.2 3.6 ± 0.3 15 ± 0.3 10 ± 0.3 14 ± 0.5 Unit: mm 1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15 0.75 ± 0.15 4.5 ± 0.2 2.54 ± 0.25 2.6 ± 0.2 2.54 ± 0.25 Ordering Information Part No. H5N3007FN-E Quantity 1050 pcs REJ03G1860-0100 Rev.1.00 Nov 09, 2009 Page 3 of 3 Shipping Container Box (Tube) Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Notes: 1. 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