IPG20N06S3L-35 OptiMOS®-T Power-Transistor Product Summary V DS 55 V R DS(on),max5) 35 mΩ ID 20 A Features • Dual N-channel Logic Level - Enhancement mode PG-TDSON-8-4 • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested Type Package Marking IPG20N06S3L-35 PG-TDSON-8-4 3N06L35 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Continuous drain current one channel active ID Conditions Value T C=25 °C, V GS=10 V1) 20 T C=100 °C, V GS=10 V2) Unit A 15.5 Pulsed drain current2) one channel active I D,pulse - 80 Avalanche energy, single pulse2, 5) E AS I D=10A 55 mJ Avalanche current, single pulse5) I AS - 20 A Gate source voltage4) V GS - ±16 V Power dissipation one channel active P tot T C=25 °C 30 W Operating and storage temperature T j, T stg - -55 ... +175 °C IEC climatic category; DIN IEC 68-1 - - 55/175/56 Rev. 1.0 page 1 2008-09-23 IPG20N06S3L-35 Parameter Symbol Values Conditions Unit min. typ. max. Thermal characteristics2) Thermal resistance, junction - case R thJC - - - 5 SMD version, device on PCB R thJA minimal footprint - 100 - 6 cm2 cooling area3) - 60 - K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D= 1 mA 55 - - Gate threshold voltage V GS(th) V DS=V GS, I D=15 µA 1.2 1.7 2.2 Zero gate voltage drain current5) I DSS V DS=55 V, V GS=0 V, T j=25 °C - 0.01 1 - 1 100 V DS=55 V, V GS=0 V, T j=125 °C2) V µA Gate-source leakage current5) I GSS V GS=16 V, V DS=0 V - 1 100 nA Drain-source on-state resistance5) R DS(on) V GS=5 V, I D=7A - 53 62 mΩ V GS=10 V, I D=11A - 30 35 Rev. 1.0 page 2 2008-09-23 IPG20N06S3L-35 Parameter Symbol Values Conditions Unit min. typ. max. - 1330 1730 - 170 220 Dynamic characteristics2) Input capacitance5) C iss Output capacitance5) C oss Reverse transfer capacitance5) Crss - 160 240 Turn-on delay time t d(on) - 3 - Rise time tr - 5 - Turn-off delay time t d(off) - 8 - Fall time tf - 9 - Gate to source charge Q gs - 7 9 Gate to drain charge Q gd - 3 4.5 Gate charge total Qg - 18 23 Gate plateau voltage V plateau - 5.1 - V IS - - 20 A - - 80 V GS=0 V, V DS=25 V, f =1 MHz V DD=27.5 V, V GS=10 V, I D=20 A, R G=25 Ω pF ns Gate Charge Characteristics2, 5) V DD=11 V, I D=20 A, V GS=0 to 10 V nC Reverse Diode Diode continous forward current2) one channel active T C=25 °C 2) Diode pulse current one channel active I S,pulse Diode forward voltage V SD V GS=0 V, I F=20 A, T j=25 °C - 1.0 1.3 V Reverse recovery time2) t rr V R=27.5 V, I F=I S, di F/dt =100 A/µs - 10 - ns Reverse recovery charge2, 5) Q rr - 10 - nC 1) Current is limited by bondwire; with an R thJC =5 K/W the chip is able to carry 22A at 25°C. 2) Specified by design. Not subject to production test. 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 4) Qualified at -5V and +16V. 5) Per channel Rev. 1.0 page 3 2008-09-23 IPG20N06S3L-35 1 Power dissipation 2 Drain current P tot = f(T C); V GS ≥ 6 V; one channel active I D = f(T C); V GS ≥ 6 V; one channel active 35 25 30 20 25 15 I D [A] P tot [W] 20 15 10 10 5 5 0 0 0 50 100 150 200 0 50 100 T C [°C] 150 200 T C [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25°C; D =0; one channel active Z thJC = f(t p) parameter: t p parameter: D =t p/T 100 101 1 µs 10 µs 0.5 100 µs 100 Z thJC [K/W] I D [A] 1 ms 10 0.1 0.05 10-1 0.01 single pulse 10-2 1 0.1 1 10 100 10-5 10-4 10-3 10-2 10-1 100 t p [s] V DS [V] Rev. 1.0 10-6 page 4 2008-09-23 IPG20N06S3L-35 5 Typ. output characteristics5) 6 Typ. drain-source on-state resistance5) I D = f(V DS); T j = 25 °C R DS(on) = f(I D); T j = 25 °C parameter: V GS parameter: V GS 80 100 5V 3.5 V 10 V 4.5 V 80 R DS(on) [mΩ] I D [A] 60 6V 40 6V 60 5.5 V 20 40 5V 4.5 V 10 V 4V 3.5 V 0 20 0 2 4 6 8 0 20 40 V DS [V] 60 80 I D [A] 7 Typ. transfer characteristics5) 8 Typ. drain-source on-state resistance5) I D = f(V GS); V DS = 6V R DS(on) = f(T j); I D = 11 A; V GS = 10 V parameter: T j 80 60 -55 °C 50 R DS(on) [mΩ] I D [A] 60 25 °C 40 40 175 °C 20 30 0 1 2 3 4 5 6 7 V GS [V] Rev. 1.0 20 -60 -20 20 60 100 140 180 T j [°C] page 5 2008-09-23 IPG20N06S3L-35 9 Typ. gate threshold voltage 10 Typ. Capacitances5) V GS(th) = f(T j); V GS = V DS C = f(V DS); V GS = 0 V; f = 1 MHz parameter: I D 104 2.5 C [pF] 2 V GS(th) [V] 150µA 1.5 15µA Ciss 3 10 1 Coss Crss 0.5 102 0 -60 -20 20 60 100 140 0 180 5 10 15 20 25 30 V DS [V] T j [°C] 11 Typical forward diode characteristicis5) 12 Avalanche characteristics5) IF = f(VSD) I A S= f(t AV) parameter: T j parameter: T j(start) 100 102 10 25 °C 101 175 °C 1 25 °C 100 0.1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 V SD [V] Rev. 1.0 150 °C I AV [A] I F [A] 100 °C 1 10 100 1000 t AV [µs] page 6 2008-09-23 IPG20N06S3L-35 13 Avalanche energy5) 14 Drain-source breakdown voltage E AS = f(T j) V BR(DSS) = f(T j); I D = 1 mA parameter: I D 65 125 5A 100 60 50 10A 25 20A V BR(DSS) [V] E AS [mJ] 75 55 50 45 0 25 50 75 100 125 150 -60 175 -20 T j [°C] 20 60 100 140 180 T j [°C] 15 Typ. gate charge5) 16 Gate charge waveforms V GS = f(Q gate); I D = 20 A pulsed parameter: V DD 12 V GS 11 V Qg 44 V 10 V GS [V] 8 6 V g s(th) 4 2 Q g (th) Q sw Q gs 0 0 5 10 15 20 Q gate Q gd 25 Q gate [nC] Rev. 1.0 page 7 2008-09-23 IPG20N06S3L-35 Published by Infineon Technologies AG 81726 Munich, Germany © Infineon Technologies AG 2008 All Rights Reserved. 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Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 page 8 2008-09-23 IPG20N06S3L-35 Revision History Version Date Changes Revision 1.0 Rev. 1.0 22.09.2008 Initial Final Data Sheet page 9 2008-09-23