DEC FSPD-200-1B 2 amp fast recovery silicon diode Datasheet

DIOTEC ELECTRONICS CORP.
Data Sheet No. FSPD-200-1B
18020 Hobart Blvd., Unit B
Gardena, CA 90248 U.S.A
Tel.: (310) 767-1052 Fax: (310) 767-7958
2 AMP FAST RECOVERY SILICON DIODES
MECHANICAL SPECIFICATION
FEATURES
SERIES RGP200 - RGP210
ACTUAL SIZE OF
DO-41 PACKAGE
R
PROPRIETARY SOFT GLASS JUNCTION
PASSIVATION FOR SUPERIOR RELIABILITY AND
PERFORMANCE
DO - 41
VOID FREE VACUUM DIE SOLDERING FOR MAXIMUM
MECHANICAL STRENGTH AND HEAT DISSIPATION
(Solder Voids: Typical < 2%, Max. < 10% of Die Area)
LL
BD (Dia)
EXTREMELY LOW LEAKAGE AT HIGH TEMPERATURES
LOW FORWARD VOLTAGE DROP
¡
BL
Color Band
Denotes
Cathode
¢
2A at T = 75 C WITH NO THERMAL RUNAWAY
MECHANICAL DATA
LL
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LD (Dia)
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ANT
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oHS
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LI
MP
O
C
Minimum
In
mm
Sym
R
0.160
BL
½ Œ¥ ©¸U¦$ ¬¾ ¬•’º¨» Œ ‹Ÿ ¬¾ ”¿¯ Š–‹­
4.1
Maximum
In
mm
5.2
0.205
BD
0.103
2.6
0.107
2.7
LL
LD
1.00
0.028
25.4
0.71
0.034
0.86
MAXIMUM RATINGS & ELECTRICAL CHARACTERISTICS
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PARAMETER (TEST CONDITIONS)
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RATINGS
SYMBOL
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UNITS
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H29
DIOTEC ELECTRONICS CORP.
Data Sheet No. FSPD-200-2B
18020 Hobart Blvd., Unit B
Gardena, CA 90248 U.S.A
Tel.: (310) 767-1052 Fax: (310) 767-7958
2 AMP FAST RECOVERY SILICON DIODES
RATING & CHARACTERISTIC CURVES FOR SERIES RGP200 - RGP210
†
‡ˆ
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FIGURE 1. FORWARD CURRENT DERATING CURVE
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FIGURE 2. MAXIMUM NON-REPETITIVE SURGE CURRENT
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TJ = 25 oC
f = 1 MHz
VSIG = 50 mV P-P
1.0
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0.1
- ,.
! !#
/ "
$%'&( )*()+ 0.01
0.4
0.6
0.8
1.0
1.2
1.4
1.6
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FIGURE 3. TYPICAL FORWARD CHARACTERISTIC
W
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1.8
ü
î+ïð-ï'ñ ò3ï ó#ô7õ ö ÷3ø3ï'ùIú ó/ô7õ ö ò3û
FIGURE 4. TYPICAL JUNCTION CAPACITANCE
W
~B
gWh i
eWf e
a bc d
W
]F^R_ `
01243576
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j@k4ll m nkop4qk
r s7t(uv w jyx zn
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FIGURE 5. REVERSE RECOVERY TEST SETUP AND TIME CHARACTERISTIC
H30
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