Vishay BZT52B12-G Aec-q101 qualified Datasheet

BZT52-G-Series
www.vishay.com
Vishay Semiconductors
Small Signal Zener Diodes
FEATURES
• Silicon planar power Zener diodes
• The Zener voltages are graded according to the
international E24 standard
• AEC-Q101 qualified
• ESD capability according to AEC-Q101:
Human body model > 8 kV
Machine model > 800 V
• Base P/N-G3 - green, commercial grade
PRIMARY CHARACTERISTICS
PARAMETER
VALUE
UNIT
VZ range nom.
2.4 to 75
V
Test current IZT
2.5; 5
mA
VZ specification
Pulse current
Int. construction
Single
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
ORDERING INFORMATION
DEVICE NAME
ORDERING CODE
TAPED UNITS PER REEL
MINIMUM ORDER QUANTITY
3000 (8 mm tape on 7" reel)
15 000/box
10 000 (8 mm tape on 13" reel)
10 000/box
BZT52C2V4-G3-08 to BZT52C75-G3-08
BZT52B2V4-G3-08 to BZT52B75-G3-08
BZT52-G-series
BZT52C2V4-G3-18 to BZT52C75-G3-18
BZT52B2V4-G3-18 to BZT52B75-G3-18
PACKAGE
PACKAGE NAME
SOD-123
WEIGHT
MOLDING COMPOUND
FLAMMABILITY RATING
MOISTURE SENSITIVITY
LEVEL
SOLDERING CONDITIONS
9.4 mg
UL 94 V-0
MSL level 1
(according J-STD-020)
260 °C/10 s at terminals
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
Diode on ceramic substrate 0.7 mm;
5 mm2 pad areas
Ptot
500
mW
Diode on ceramic substrate 0.7 mm;
2.5 mm2 pad areas
Ptot
410
mW
RthJA
300
K/W
Tj
150
°C
Storage temperature range
Tstg
- 65 to + 150
°C
Operating temperature range
Top
- 55 to + 150
°C
Power dissipation
Zener current
Thermal resistance junction to ambient air
Junction temperature
Rev. 1.3, 27-Feb-13
See Table “Electrical Characteristics”
Valid provided that electrodes are kept at
ambient temperature
Document Number: 83340
1
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BZT52-G-Series
www.vishay.com
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
ZENER VOLTAGE
RANGE (1)
PART NUMBER
MARKING
CODE
VZ at IZT1
TEST
CURRENT
IZT1
V
IZT2
mA
REVERSE
VOLTAGE
DYNAMIC
RESISTANCE
TEMP.
COEFFICIENT
VR at IR
ZZ at IZT1 ZZK at IZT2
VZ

10-4/°C
V
nA
ADMISSABLE
ZENER
CURRENT (4)
IZ at
Tamb =
45 °C
IZ at
Tamb =
25 °C
mA
MIN. NOM. MAX.
BZT52C2V4-G
Y1
2.2
2.4
2.6
5
1
-
100
85
600
- 9 to - 4
-
-
BZT52C2V7-G
Y2
2.5
2.7
2.9
5
1
-
100
75 (< 83)
< 500
- 9 to - 4
113
134
BZT52C3V0-G
Y3
2.8
3.0
3.2
5
1
-
100
80 (< 95)
< 500
- 9 to - 3
98
118
BZT52C3V3-G
Y4
3.1
3.3
3.5
5
1
-
100
80 (< 95)
< 500
- 8 to - 3
92
109
BZT52C3V6-G
Y5
3.4
3.6
3.8
5
1
-
100
80 (< 95)
< 500
- 8 to - 3
85
100
BZT52C3V9-G
Y6
3.7
3.9
4.1
5
1
-
100
80 (< 95)
< 500
- 7 to - 3
77
92
BZT52C4V3-G
Y7
4
4.3
4.6
5
1
-
100
80 (< 95)
< 500
- 6 to - 1
71
84
BZT52C4V7-G
Y8
4.4
4.7
5
5
1
-
100
70 (< 78)
< 500
- 5 to + 2
64
76
BZT52C5V1-G
Y9
4.8
5.1
5.4
5
1
> 0.8
100
30 (< 60)
< 480
- 3 to + 4
56
67
BZT52C5V6-G
YA
5.2
5.6
6
5
1
>1
100
10 (< 40)
< 400
- 2 to + 6
50
59
BZT52C6V2-G
YB
5.8
6.2
6.6
5
1
>2
100
4.8 (< 10)
< 200
- 1 to + 7
45
54
BZT52C6V8-G
YC
6.4
6.8
7.2
5
1
>3
100
4.5 (< 8)
< 150
+ 2 to + 7
41
49
BZT52C7V5-G
YD
7
7.5
7.9
5
1
>5
100
4 (< 7)
< 50
+ 3 to + 7
37
44
BZT52C8V2-G
YE
7.7
8.2
8.7
5
1
>6
100
4.5 (< 7)
< 50
+ 4 to + 7
34
40
BZT52C9V1-G
YF
8.5
9.1
9.6
5
1
>7
100
4.8 (< 10)
< 50
+ 5 to + 8
30
36
BZT52C10-G
YG
9.4
10
10.6
5
1
> 7.5
100
5.2 (< 15)
< 70
+ 5 to + 8
28
33
BZT52C11-G
YH
10.4
11
11.6
5
1
> 8.5
100
6 (< 20)
< 70
+ 5 to + 9
25
30
BZT52C12-G
YI
11.4
12
12.7
5
1
>9
100
7 (< 20)
< 90
+ 6 to + 9
23
28
BZT52C13-G
YK
12.4
13
14.1
5
1
> 10
100
9 (< 25)
< 110
+ 7 to + 9
21
25
BZT52C15-G
YL
13.8
15
15.6
5
1
> 11
100
11 (< 30)
< 110
+ 7 to + 9
19
23
BZT52C16-G
YM
15.3
16
17.1
5
1
> 12
100
13 (< 40)
< 170
+ 8 to + 9.5
17
20
BZT52C18-G
YN
16.8
18
19.1
5
1
> 14
100
18 (< 50)
< 170
+ 8 to + 9.5
15
18
BZT52C20-G
YO
18.8
20
21.2
5
1
> 15
100
20 (< 50)
< 220
+ 8 to + 10
14
17
BZT52C22-G
YP
20.8
22
23.3
5
1
> 17
100
25 (< 55)
< 220
+ 8 to + 10
13
16
BZT52C24-G
YR
22.8
24
25.6
5
1
> 18
100
28 (< 80)
< 220
+ 8 to + 10
11
13
BZT52C27-G
YS
25.1
27
28.9
5
1
> 20
100
30 (< 80)
< 250
+ 8 to + 10
10
12
BZT52C30-G
YT
28
30
32
5
1
> 22.5
100
35 (< 80)
< 250
+ 8 to + 10
9
10
BZT52C33-G
YU
31
33
35
5
1
> 25
100
40 (< 80)
< 250
+ 8 to + 10
8
9
BZT52C36-G
YW
34
36
38
5
1
> 27
100
40 (< 90)
< 250
+ 8 to + 10
8
9
8
BZT52C39-G
YX
37
39
41
5
1
> 29
100
50 (< 90)
< 300
+ 10 to + 12
7
BZT52C43-G
YY
40
43
46
5
1
> 32
100
60 (< 100)
< 700
+ 10 to + 12
6
7
BZT52C47-G
YZ
44
47
50
5
1
> 35
100
70 (< 100)
< 750
+ 10 to + 12
5
6
BZT52C51-G
Z1
48
51
54
5
1
> 38
100
70 (< 100)
< 750
+ 10 to + 12
5
6
BZT52C56-G
Z2
52
56
60
2.5
1
-
100
< 135 (2)
< 1000 (3)
typ. + 10 (2)
-
-
< 1000
(3)
BZT52C62-G
Z3
58
62
66
2.5
1
-
100
< 150
(2)
typ. + 10
(2)
-
-
BZT52C68-G
Z4
64
68
72
2.5
1
-
100
< 200
(2)
< 1000 (3)
typ. + 10
(2)
-
-
BZT52C75-G
Z5
70
75
79
2.5
1
-
100
< 250
(2)
< 1000 (3)
typ. + 10
(2)
-
-
Notes
• IZT1 = 5 mA, IZT2 = 1 mA
(1) Measured with pulses t = 5 ms
p
(2) I
ZT1 = 2.5 mA
(3) I
ZT2 = 0.5 mA
(4) Valid provided that electrodes are kept at ambient temperature
Rev. 1.3, 27-Feb-13
Document Number: 83340
2
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BZT52-G-Series
www.vishay.com
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
ZENER VOLTAGE
RANGE (1)
PART NUMBER
MARKING
CODE
VZ at IZT1
TEST
CURRENT
IZT1
V
IZT2
mA
REVERSE
VOLTAGE
DYNAMIC
RESISTANCE
TEMP.
COEFFICIENT
VR at IR
ZZ at IZT1 ZZK at IZT2
VZ

10-4/°C
V
nA
ADMISSABLE
ZENER
CURRENT (4)
IZ at
Tamb =
45 °C
IZ at
Tamb =
25 °C
mA
MIN. NOM. MAX.
BZT52B2V4-G
V1
2.35
2.4
2.45
5
1
-
100
85
600
- 9 to - 4
-
-
BZT52B2V7-G
V2
2.65
2.7
2.75
5
1
-
100
75 (< 83)
< 500
- 9 to - 4
113
134
BZT52B3V0-G
V3
2.94
3.0
3.06
5
1
-
100
80 (< 95)
< 500
- 9 to - 3
98
118
BZT52B3V3-G
V4
3.23
3.3
3.37
5
1
-
100
80 (< 95)
< 500
- 8 to - 3
92
109
BZT52B3V6-G
V5
3.53
3.6
3.67
5
1
-
100
80 (< 95)
< 500
- 8 to - 3
85
100
BZT52B3V9-G
V6
3.82
3.9
3.98
5
1
-
100
80 (< 95)
< 500
- 7 to - 3
77
92
BZT52B4V3-G
V7
4.21
4.3
4.39
5
1
-
100
80 (< 95)
< 500
- 6 to - 1
71
84
BZT52B4V7-G
V8
4.61
4.7
4.79
5
1
-
100
70 (< 78)
< 500
- 5 to + 2
64
76
BZT52B5V1-G
V9
5
5.1
5.2
5
1
> 0.8
100
30 (< 60)
< 480
- 3 to + 4
56
67
BZT52B5V6-G
VA
5.49
5.6
5.71
5
1
>1
100
10 (< 40)
< 400
- 2 to + 6
50
59
BZT52B6V2-G
VB
6.08
6.2
6.32
5
1
>2
100
4.8 (< 10)
< 200
- 1 to + 7
45
54
BZT52B6V8-G
VC
6.66
6.8
6.94
5
1
>3
100
4.5 (< 8)
< 150
+ 2 to + 7
41
49
BZT52B7V5-G
VD
7.35
7.5
7.65
5
1
>5
100
4 (< 7)
< 50
+ 3 to + 7
37
44
BZT52B8V2-G
VE
8.04
8.2
8.36
5
1
>6
100
4.5 (< 7)
< 50
+ 4 to + 7
34
40
BZT52B9V1-G
VF
8.92
9.1
9.28
5
1
>7
100
4.8 (< 10)
< 50
+ 5 to + 8
30
36
BZT52B10-G
VG
9.8
10
10.2
5
1
> 7.5
100
5.2 (< 15)
< 70
+ 5 to + 8
28
33
BZT52B11-G
VH
10.8
11
11.2
5
1
> 8.5
100
6 (< 20)
< 70
+ 5 to + 9
25
30
BZT52B12-G
VI
11.8
12
12.2
5
1
>9
100
7 (< 20)
< 90
+ 6 to + 9
23
28
BZT52B13-G
VK
12.7
13
13.3
5
1
> 10
100
9 (< 25)
< 110
+ 7 to + 9
21
25
BZT52B15-G
VL
14.7
15
15.3
5
1
> 11
100
11 (< 30)
< 110
+ 7 to + 9
19
23
BZT52B16-G
VM
15.7
16
16.3
5
1
> 12
100
13 (< 40)
< 170
+ 8 to + 9.5
17
20
BZT52B18-G
VN
17.6
18
18.4
5
1
> 14
100
18 (< 50)
< 170
+ 8 to + 9.5
15
18
BZT52B20-G
VO
19.6
20
20.4
5
1
> 15
100
20 (< 50)
< 220
+ 8 to + 10
14
17
BZT52B22-G
VP
21.6
22
22.4
5
1
> 17
100
25 (< 55)
< 220
+ 8 to + 10
13
16
BZT52B24-G
VR
23.5
24
24.5
5
1
> 18
100
28 (< 80)
< 220
+ 8 to + 10
11
13
BZT52B27-G
VS
26.5
27
27.5
5
1
> 20
100
30 (< 80)
< 250
+ 8 to + 10
10
12
BZT52B30-G
VT
29.4
30
30.6
5
1
> 22.5
100
35 (< 80)
< 250
+ 8 to + 10
9
10
BZT52B33-G
VU
32.3
33
33.7
5
1
> 25
100
40 (< 80)
< 250
+ 8 to + 10
8
9
BZT52B36-G
VW
35.3
36
36.7
5
1
> 27
100
40 (< 90)
< 250
+ 8 to + 10
8
9
BZT52B39-G
VX
38.2
39
39.8
5
1
> 29
100
50 (< 90)
< 300
+ 10 to + 12
7
8
BZT52B43-G
VY
42.1
43
43.9
5
1
> 32
100
60 (< 100)
< 700
+ 10 to + 12
6
7
BZT52B47-G
VZ
46.1
47
47.9
5
1
> 35
100
70 (< 100)
< 750
+ 10 to + 12
5
6
BZT52B51-G
U1
50
51
52
5
1
> 38
100
70 (< 100)
< 750
+ 10 to + 12
5
6
BZT52B56-G
U2
54.9
56
57.1
2.5
1
-
100
< 135 (2)
< 1000 (3)
typ. + 10 (2)
-
-
BZT52B62-G
U3
60.8
62
63.2
2.5
1
-
100
< 150 (2)
< 1000 (3)
typ. + 10 (2)
-
-
BZT52B68-G
U4
66.6
68
69.4
2.5
1
-
100
< 200 (2)
< 1000 (3)
typ. + 10 (2)
-
-
BZT52B75-G
U5
73.5
75
76.5
2.5
1
-
100
< 250 (2))
< 1500 (3)
typ. + 10 (2)
-
-
Notes
• IZT1 = 5 mA, IZT2 = 1 mA
(1) Measured with pulses t = 5 ms
p
(2) I
ZT1 = 2.5 mA
(3) I
ZT2 = 0.5 mA
(4) Valid provided that electrodes are kept at ambient temperature
Rev. 1.3, 27-Feb-13
Document Number: 83340
3
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BZT52-G-Series
www.vishay.com
Vishay Semiconductors
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Ω
100
mA
103
TJ = 25 °C
102
IF
5
4
10
rzj
TJ = 100 °C
1
3
33
2
27
22
10
10-1
18
TJ = 25 °C
10-2
15
5
4
10-3
12
3
10
2
10-4
6.8/8.2
6.2
1
10-5
0
0.2
0.4
0.6
0.8
1V
VF
18114
0.1
2
1
5
2
5
18119
10
IZ
2
5
100 mA
Fig. 4 - Dynamic Resistance vs. Zener Current
Fig. 1 - Forward Characteristics
Ω
103
mW
500
Tj = 25 °C
7
5
4
400
Rzj
Ptot
3
2
300
47 + 51
43
39
36
102
7
200
5
4
3
100
2
10
0.1
0
0
100
200 °C
Fig. 2 - Admissible Power Dissipation vs. Ambient Temperature
3
4 5
2
3 4 5
IZ
Ω
103
TJ = 25 °C
5
4
3
2
1
10
mA
Fig. 5 - Dynamic Resistance vs. Zener Current
Ω
1000
rzj
2
18120
Tamb
18888
Rzth
Rzth = RthA x VZ x
5
4
3
2
Δ VZ
ΔTj
102
100
5
4
3
5
4
3
2
2
10
5
4
3
2.7
3.6
4.7
5.1
10
5.6
1
2
1
0.1
18117
2
5
1
2
5
10
2
5
100 mA
IZ
Fig. 3 - Dynamic Resistance vs. Zener Current
Rev. 1.3, 27-Feb-13
5
4
3
negative
2
1
18121
2
positive
3
4 5
10
2
3 4 5
100 V
VZ at IZ = 5 mA
Fig. 6 - Thermal Differential Resistance vs. Zener Voltage
Document Number: 83340
4
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BZT52-G-Series
www.vishay.com
Vishay Semiconductors
Ω
100
mV/°C
100
IZ = 5 mA
7
5
4
Rzj
Δ VZ
ΔTj
3
80
2
60
10
7
40
5
4
3
20
2
Tj = 25 °C
IZ = 5 mA
1
1
2
3
10
4 5
2
3 4 5
18122
0
0
100 V
VZ
Fig. 7 - Dynamic Resistance vs. Zener Voltage
60
40
80
100 V
VZ at IZ = 2 mA
Fig. 10 - Temperature Dependence of Zener Voltage vs.
Zener Voltage
mV/°C
25
Δ VZ
ΔTj
20
18136
V
9
20
8
IZ =
15
5 mA
1 mA
20 mA
VZ at IZ = 5 mA
7
ΔVZ
51
6
5
10
43
4
36
3
5
2
1
0
0
-5
1
2
3
10
4 5
2
3 4 5
100 V
VZ at IZ = 5 mA
V ≥ 27 V, I = 2 mA
18135
-1
0
Fig. 8 - Temperature Dependence of Zener Voltage vs.
Zener Voltage
IZ = 5 mA
20
40
60
80
18158
100
Tj
120
140 °C
Fig. 11 - Change of Zener Voltage vs. Junction Temperature
V
0.8
25
0.7
VZ at IZ = 5 mA
10
0.6
Δ VZ
V
1.6
15
0.5
8
0.4
1.2
ΔVZ 1.0
7
0.8
0.6
0.2
6.2
5.9
0.1
5.6
0.2
0.3
0
ΔVZ = rZth x IZ
IZ = 5 mA
VZ >= 56 V; IZ = 2.5 mA
1.4
0.4
0
5.1
- 0.2
-1
3.6
- 0.2
0
18124
20
40
60
80
4.7
100 120 140 C
1
18159
10
VZ at IZ = 5 mA
100 V
Tj
Fig. 9 - Change of Zener Voltage vs. Junction Temperature
Rev. 1.3, 27-Feb-13
- 0.4
Fig. 12 - Change of Zener Voltage from Turn-on up to the Point of
Thermal Equilibrium vs. Zener Voltage
Document Number: 83340
5
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BZT52-G-Series
www.vishay.com
V
5
Vishay Semiconductors
mA
50
ΔVZ = rzth x IZ
4
Tj = 25 °C
3.9 5.6
2.7
6.8
3.3 4.7
40
lZ
Δ VZ
3
8.2
30
IZ = 5 mA
2
20
1
Test
current
IZ 5 mA
10
IZ = 2.5 mA
0
0
0
18160
20
40
60
100 V
80
0
VZ at IZ = 5 mA
18111
Fig. 13 - Change of Zener Voltage from Turn-on up to the Point of
Thermal Equilibrium vs. Zener Voltage
mA
30
lZ
1
2
3
4
5
6
7
8
9 10 V
VZ
Fig. 14 - Breakdown Characteristics
10
12
Tj = 25 °C
15
20
18
22
27
Test
10 current
IZ 5 mA
33 36
0
0
18112
10
20
30
40 V
VZ
Fig. 15 - Breakdown Characteristics
18157
Fig. 16 - Breakdown Characteristics
Rev. 1.3, 27-Feb-13
Document Number: 83340
6
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BZT52-G-Series
www.vishay.com
Vishay Semiconductors
0.10 (0.004)
0.15 (0.006)
8°
0.45 (0.018)
0.25 (0.010)
0° to
0.2 (0.008)
1 (0.039)
1.35 (0.053)
0.1 (0.004) max.
PACKAGE DIMENSIONS in millimeters (inches): SOD-123
0.5 (0.020) ref.
Cathode bar
Mounting Pad Layout
2.85 (0.112)
2.55 (0.100)
0.85 (0.033)
2.5 (0.098)
0.85 (0.033)
3.55 (0.140)
1.7 (0.067)
3.85 (0.152)
1.40 (0.055)
0.45 (0.018)
0.65 (0.026)
0.85 (0.033)
Rev. 4 - Date: 24. Sep. 2009
Document no.: S8-V-3910.01-001 (4)
17432
Rev. 1.3, 27-Feb-13
Document Number: 83340
7
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
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Disclaimer

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Revision: 13-Jun-16
1
Document Number: 91000
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