Formosa MS Chip Silicon Rectifier HFM101 THRU HFM107 Ultra fast recovery type Features SMA Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. 0.185(4.8) 0.177(4.4) 0.012(0.3) Typ. For surface mounted applications. 0.110(2.8) 0.094(2.4) Exceeds environmental standards of MIL-S-19500 / 228 0.165(4.2) 0.150(3.8) Low leakage current. 0.067(1.7) 0.060(1.5) 0.040(1.0) Typ. Mechanical data 0.040 (1.0) Typ. Dimensions in inches and (millimeters) Case : Molded plastic, JEDEC DO-214AC Terminals : Solder plated, s olderable per MIL-STD-750, Method 2026 Polarity : Indicated by cathode band Mounting Position : Any Weight : 0.0015 ounce, 0.05 gram MAXIMUM RATINGS (AT TA=25oC unless otherwise noted) PARAMETER CONDITIONS Symbol o Forward rectified current Ambient temperature = 50 C Forward surge current 8.3ms single half sine-wave superimposed on rate load (JEDEC methode) 25o C VR = VRRM TA = Reverse current MAX. UNIT IO 1.0 A IFSM 30 A 5.0 uA 150 Junction to ambient Diode junction capacitance Rq JA f=1MHz and applied 4vDC reverse voltage TSTG V RRM *1 V RMS *2 (V) (V) VR *3 (V) HFM101 H11 50 35 50 HFM102 H12 100 70 100 HFM103 H13 200 140 200 HFM104 H14 300 210 300 HFM105 H15 400 280 400 HFM106 H16 600 420 600 HFM107 H17 800 560 800 VF *4 (V) T RR *5 (nS) C / w 20 -55 pF +150 o C Operating temperature (o C) 1.0 *1 Repetitive peak reverse voltage 50 *2 RMS voltage -55 to +150 1.3 *3 Continuous reverse voltage *4 Maximum forward voltage 1.7 uA o 32 CJ Storage temperature MARKING CODE TYP. IR VR = VRRM TA = 100o C Thermal resistance SYMBOLS MIN. 75 *5 Reverse recovery time RATING AND CHARACTERISTIC CURVES (HFM101 THRU HFM107) FIG.2-TYPICAL FORWARD CURRENT DERATING CURVE FIG.1-TYPICAL FORWARD CHARACTERISTICS 5 7 FM 10 6~ H HF M1 0 4~ HF M1 0 1~ FM 10 H 1.0 HF M1 0 HF M1 0 .1 1.2 1.0 0.8 Single Phase 0.6 Half Wave 60Hz Resistive Or Inductive Load 0.4 0.2 0 0 25 50 75 100 125 150 175 AMBIENT TEMPERATURE ( C) Tj=25 C Pulse Width 300us 1% Duty Cycle .01 .6 .8 1.0 1.2 1.4 1.6 1.8 FORWARD VOLTAGE,(V) FIG.3- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTICS 50W NONINDUCTIVE 10W NONINDUCTIVE ( ) (+) D.U.T. 25Vdc (approx.) PEAK FORWARD SURGE CURRENT,(A) .001 .4 FIG.4-MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT PULSE GENERATOR (NOTE 2) ( ) 30 24 18 Sine Wave 12 JEDEC method 6 1 5 (+) 1W NONINDUCTIVE 8.3ms Single Half Tj=25 C 0 50 10 100 NUMBER OF CYCLES AT 60Hz OSCILLISCOPE (NOTE 1) NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF. 2. Rise Time= 10ns max., Source Impedance= 50 ohms. FIG.5-TYPICAL JUNCTION CAPACITANCE 175 trr JUNCTION CAPACITANCE,(pF) INSTANTANEOUS FORWARD CURRENT,(A) 3 AVERAGE FORWARD CURRENT,(A) 10 | | | | | | | | +0.5A 0 -0.25A -1.0A 120 100 80 60 40 20 1cm SET TIME BASE FOR 50 / 10ns / cm 0 .01 .05 .1 .5 1 REVERSE VOLTAGE,(V) 5 10 50 100